《
半导体器件导论》(影印版)还尽量保持了原书的主要优点:(1)注重基本概念和方法。《半导体器件导论》(影印版)从内容的整体编排到具体章节的叙述,都体现了突出
物理概念、强调基本分析方法的指导思想。书中的数学推导和物理分析融为一体,得出的结论不仅对理解物理概念十分重要,而且经得起反复推敲。书中还采用了大量非常清晰的插图,帮助读者更好地理解基本概念。(2)可读性强,便于自学。全书脉络清楚,说理透彻,易于读者理解和掌握。每一章的开头都有引言,告诉读者可以从本章学到什么,应该掌握什么;每一章中都有例题和读者自测题;每一章的最后还有总结、复习提纲和大量
习题(其中包含一些采用计算机进行模拟计算的练习题)。通过举例和练习加深读者对基本概念的理解是《半导体器件导论》(影印版)突出的特点。
UC9w T 《半导体器件导论》(影印版)是美国新墨西哥大学电机与计算机工程系Neamen教授所著的“SereicorlductorPhysics and Devices,3rd edition”一书的改进版本。
+)d7SWO6]! 与原书相比,《半导体器件导论》(影印版)更好地将固体晶格结构、量子力学入门知识、固体的量子理论以及半导体物理和半导体器件有机地结合在一起。利用《半导体器件导论》(影印版),学生只需要具有高等数学和大学普通物理的基础,用一个学期就可以系统地学习到半导体器件的基本理论,从而为进入微
电子学研究领域打下一个良好的基础。这一特点也是目前国内出版的同类教材很难达到的。
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RFm9dHI27 s^AZ)k~J( Preface xvii
D'Sdz\:4 CHAPTER 1
SbpO<8}8 The Crystal Structure of Solids
C[(Exe 1.0 Preview 1
v~HfA)#JK 1.1 Semiconductor Materials 2
K<tkNWasQ 1.2 Types of Solids 3
T k>N4yq 1.3 Space Lattices 4
I#hzU8Cc 1.3.1 Primitive and Unit Cell 4
~4~>;e 1.3.2 Basic Crystal Structures 6
mh`VZQ@ 1.3.3 Crystal Planes and Miller Indices
-n$fh::^ 1.3.4 The Diamond Structure 13
0IjQqI 1.4 Atomic Bonding 15
=u`^QE 1.5 Imperfections and Impurities in Solids 17
Y3I+TI>x 1.5.1 Imperfections in Solids 17
-T-h~5 1.5.2 Impurities in Solids 18
o%A@
OY 1.6 Growth of Semiconductor Materials 19
WAcQRa~C 1.6.1 Growth from a Melt 20
M3dNG]3E 1.6.2 Epitaxial Growth 22
G@QZmuj&KH 1.7 Device Fabrication Techniques:
Tp/+{|~ Oxidation 23
$
V"7UA22 1.8 Summary 25
QFf lx Problems 27
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*tT}y(M Theory of Solids 31
F/w!4,'<?5 2.0 Preview 31
fKAG+ t 2.1 Principles of Quantum Mechanics 32
eq\{*r"DCK 2.1.1 Energy Quanta 32
';!02=-@ 2.1.2 Wave-Particle Duality Principle 34
l2!4}zI2 2.2 Energy Quantization and Probability Concepts 36
"I]% aK0 2.2.1 Physical Meaning of the Wave Function 36
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L 2.2.2 The One-Electron Atom 37
5fBW#6N/ 2.2.3 Periodic Table 40
RyxIJJui 2.3 Energy-Band Theory 41
e&u HU8k* 2.3.1 Formation of Energy Bands 41
rT
~qoA\ 2.3.2 The Energy Band and the Bond Model 45
!g~xn2m$R 2.3.3 Charge Carriers——Electrons and Holes 47
~z!U/QR2 2.3.4 Effective Mass 49
C@L:m1fz 2.3.5 Metals, Insulators, and Semiconductors 50
l+Tw#2s$ 2.3.6 The k-Space Diagram 52
"sRR:wzQu 2,4 Density of States Function 55
( UV8M\ 2.5 Statistical Mechanics 57
RxkcQL/Le 2.5.1 Statistical Laws 57
G?d28p',. 2.5.2 The Fermi-Dirac Distribution Function
:U<`iJwY and the Fermi Energy 58
"Gxf[6B 2.5.3 Maxwell-Boltzmann Approximation 62
kf$0}T` 2.6 Summary 64
u<\/T&S Problems 65
nMXSpX>!| CHAPTER 3
6?ylSQ]1 The Semiconductor in Equilibrium 70
pUr.<yc&u 3.0 Preview 70
%c(':vI# 3.1 Charge Carriers in Semiconductors 71
b07 MTDFH7 3.1.1 Equilibrium Distribution of Electrons and Holes 72
qgU$0enSs 3.1.2 The no and Po Equations 74
-`B|$ W 3.1.3 The Intrinsic Carrier Concentration 79
e?G] fz 3.1.4 The Intrinsic Fermi-Level Position 82
hM(|d@) 3.2 Dopant Atoms and Energy Levels 83
dd>stp 3.2.1 Qualitative Description 83
dM 7-,9Vc 3.2.2 Ionization Energy 86
(_E<? 3.2.3 Group III-V Semiconductors 88
1<
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6546"sU 3.3.1 Equilibrium Distribution of Electrons and Holes 89
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