《
半导体器件导论》(影印版)还尽量保持了原书的主要优点:(1)注重基本概念和方法。《半导体器件导论》(影印版)从内容的整体编排到具体章节的叙述,都体现了突出
物理概念、强调基本分析方法的指导思想。书中的数学推导和物理分析融为一体,得出的结论不仅对理解物理概念十分重要,而且经得起反复推敲。书中还采用了大量非常清晰的插图,帮助读者更好地理解基本概念。(2)可读性强,便于自学。全书脉络清楚,说理透彻,易于读者理解和掌握。每一章的开头都有引言,告诉读者可以从本章学到什么,应该掌握什么;每一章中都有例题和读者自测题;每一章的最后还有总结、复习提纲和大量
习题(其中包含一些采用计算机进行模拟计算的练习题)。通过举例和练习加深读者对基本概念的理解是《半导体器件导论》(影印版)突出的特点。
.9J^\%JD 《半导体器件导论》(影印版)是美国新墨西哥大学电机与计算机工程系Neamen教授所著的“SereicorlductorPhysics and Devices,3rd edition”一书的改进版本。
JW>k8QjyN 与原书相比,《半导体器件导论》(影印版)更好地将固体晶格结构、量子力学入门知识、固体的量子理论以及半导体物理和半导体器件有机地结合在一起。利用《半导体器件导论》(影印版),学生只需要具有高等数学和大学普通物理的基础,用一个学期就可以系统地学习到半导体器件的基本理论,从而为进入微
电子学研究领域打下一个良好的基础。这一特点也是目前国内出版的同类教材很难达到的。
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DyC*nE; o,7|=.-b X=QX9Ux?^ Preface xvii
Rhc:szDU CHAPTER 1
,rB(WKU The Crystal Structure of Solids
!>48`o^ 1.0 Preview 1
i}m'#b 1.1 Semiconductor Materials 2
+hRy{Ps/ 1.2 Types of Solids 3
ex>7f%\ 1.3 Space Lattices 4
T+Yv5l 1.3.1 Primitive and Unit Cell 4
~XR('}5D 1.3.2 Basic Crystal Structures 6
$ }/tlA&e 1.3.3 Crystal Planes and Miller Indices
qiz(k:\o 1.3.4 The Diamond Structure 13
zO)3MC7l* 1.4 Atomic Bonding 15
y$HV;%G{26 1.5 Imperfections and Impurities in Solids 17
~0gHh 1.5.1 Imperfections in Solids 17
<#:ey^q< 1.5.2 Impurities in Solids 18
DqBiBH[%h 1.6 Growth of Semiconductor Materials 19
:.fm LL 1.6.1 Growth from a Melt 20
8Nf%<nUv 1.6.2 Epitaxial Growth 22
Sa$-Yf 1.7 Device Fabrication Techniques:
r(c8P6_ Oxidation 23
32,Y3!% 1.8 Summary 25
l>jNBxB|/A Problems 27
QpMi+q
Y CHAPTER 2
t\\`#gc9~i Theory of Solids 31
.OSFLY#[? 2.0 Preview 31
Z {*<Gx 2.1 Principles of Quantum Mechanics 32
r/mKuGa] 2.1.1 Energy Quanta 32
6^"Spf] 2.1.2 Wave-Particle Duality Principle 34
xU;;@9X 2.2 Energy Quantization and Probability Concepts 36
OOj}CZ6 2.2.1 Physical Meaning of the Wave Function 36
Dt*/tVF 2.2.2 The One-Electron Atom 37
I=9sTR) 2.2.3 Periodic Table 40
UB|}+WA3 2.3 Energy-Band Theory 41
di]TS9&9 2.3.1 Formation of Energy Bands 41
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2.3.2 The Energy Band and the Bond Model 45
7y'2 2.3.3 Charge Carriers——Electrons and Holes 47
?=0BU} 2.3.4 Effective Mass 49
5}"9)LT@@w 2.3.5 Metals, Insulators, and Semiconductors 50
% (x9~" 2.3.6 The k-Space Diagram 52
F>s5<pKAX 2,4 Density of States Function 55
jq12,R2+) 2.5 Statistical Mechanics 57
v<tr1cUT 2.5.1 Statistical Laws 57
<]h?_) 2.5.2 The Fermi-Dirac Distribution Function
^ah9:}Ll and the Fermi Energy 58
58o'Q 2.5.3 Maxwell-Boltzmann Approximation 62
])NQzgS 2.6 Summary 64
q2~@z-q)b Problems 65
xy[aZr CHAPTER 3
*32hIiCm The Semiconductor in Equilibrium 70
m>ApN@n 3.0 Preview 70
Iju9#b6 3.1 Charge Carriers in Semiconductors 71
swLrp
74 3.1.1 Equilibrium Distribution of Electrons and Holes 72
yw+LT,AQ. 3.1.2 The no and Po Equations 74
TnQ"c)ta 3.1.3 The Intrinsic Carrier Concentration 79
T43Jgk, 3.1.4 The Intrinsic Fermi-Level Position 82
k?;B1D8-n 3.2 Dopant Atoms and Energy Levels 83
B
42t 3.2.1 Qualitative Description 83
@PAT|6 3.2.2 Ionization Energy 86
_%:$sAj 3.2.3 Group III-V Semiconductors 88
^n&_JQIXb 3.3 Carrier Distributions in the Extrinsic Semiconductor 89
5v,_ Hgh 3.3.1 Equilibrium Distribution of Electrons and Holes 89
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