《
半导体器件导论》(影印版)还尽量保持了原书的主要优点:(1)注重基本概念和方法。《半导体器件导论》(影印版)从内容的整体编排到具体章节的叙述,都体现了突出
物理概念、强调基本分析方法的指导思想。书中的数学推导和物理分析融为一体,得出的结论不仅对理解物理概念十分重要,而且经得起反复推敲。书中还采用了大量非常清晰的插图,帮助读者更好地理解基本概念。(2)可读性强,便于自学。全书脉络清楚,说理透彻,易于读者理解和掌握。每一章的开头都有引言,告诉读者可以从本章学到什么,应该掌握什么;每一章中都有例题和读者自测题;每一章的最后还有总结、复习提纲和大量
习题(其中包含一些采用计算机进行模拟计算的练习题)。通过举例和练习加深读者对基本概念的理解是《半导体器件导论》(影印版)突出的特点。
-Ac^#/[0 《半导体器件导论》(影印版)是美国新墨西哥大学电机与计算机工程系Neamen教授所著的“SereicorlductorPhysics and Devices,3rd edition”一书的改进版本。
:}lE@Y,R 与原书相比,《半导体器件导论》(影印版)更好地将固体晶格结构、量子力学入门知识、固体的量子理论以及半导体物理和半导体器件有机地结合在一起。利用《半导体器件导论》(影印版),学生只需要具有高等数学和大学普通物理的基础,用一个学期就可以系统地学习到半导体器件的基本理论,从而为进入微
电子学研究领域打下一个良好的基础。这一特点也是目前国内出版的同类教材很难达到的。
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k EpiagCS Preface xvii
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CHAPTER 1
ZISR]xay The Crystal Structure of Solids
+{s^"M2` 1.0 Preview 1
2:]Sy4K{ 1.1 Semiconductor Materials 2
ny}?+&K 1.2 Types of Solids 3
-`( :L[ 1.3 Space Lattices 4
@[^H*^1|g 1.3.1 Primitive and Unit Cell 4
[4gv_g 1.3.2 Basic Crystal Structures 6
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1.3.3 Crystal Planes and Miller Indices
R
.,w`<< 1.3.4 The Diamond Structure 13
?FLjvmE9 1.4 Atomic Bonding 15
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f4 1.5 Imperfections and Impurities in Solids 17
:=/DF 1.5.1 Imperfections in Solids 17
`f(!i mN 1.5.2 Impurities in Solids 18
@{bf]Oc 1.6 Growth of Semiconductor Materials 19
E^rN) 1.6.1 Growth from a Melt 20
R75sK(oS 1.6.2 Epitaxial Growth 22
4B|f}7%\ 1.7 Device Fabrication Techniques:
XjV7Ew^7 Oxidation 23
{*: C$"L 1.8 Summary 25
giPyo"SD Problems 27
f"[C3o2P CHAPTER 2
(Lc%G~{ Theory of Solids 31
cD 1p5U 2.0 Preview 31
3[c54S+(U 2.1 Principles of Quantum Mechanics 32
%T&kK2d; 2.1.1 Energy Quanta 32
Q5Wb) 2.1.2 Wave-Particle Duality Principle 34
G#csN&|, 2.2 Energy Quantization and Probability Concepts 36
g,.iM8 2.2.1 Physical Meaning of the Wave Function 36
AojX)_"z 2.2.2 The One-Electron Atom 37
p4/D%*G^` 2.2.3 Periodic Table 40
/rquI y^ 2.3 Energy-Band Theory 41
J[^-k!9M 2.3.1 Formation of Energy Bands 41
CkOd>Kn 2.3.2 The Energy Band and the Bond Model 45
\X(.%5xC 2.3.3 Charge Carriers——Electrons and Holes 47
m$U2|5un& 2.3.4 Effective Mass 49
{3l]/X3 2.3.5 Metals, Insulators, and Semiconductors 50
8garRB{ 2.3.6 The k-Space Diagram 52
S -im
o 2,4 Density of States Function 55
gG#M-2P 2.5 Statistical Mechanics 57
DCHU=r 2.5.1 Statistical Laws 57
\=w|Zeu{l 2.5.2 The Fermi-Dirac Distribution Function
V%"aU}
and the Fermi Energy 58
CrK}mbe 2.5.3 Maxwell-Boltzmann Approximation 62
AH ;h#dT 2.6 Summary 64
_- { > e Problems 65
3t8VH`!mL{ CHAPTER 3
.(! $j-B The Semiconductor in Equilibrium 70
. }^m8PP 3.0 Preview 70
.8k9yk 3.1 Charge Carriers in Semiconductors 71
>1W)J3 3.1.1 Equilibrium Distribution of Electrons and Holes 72
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3.1.2 The no and Po Equations 74
d}Q;CF3m: 3.1.3 The Intrinsic Carrier Concentration 79
gx3arVa 3.1.4 The Intrinsic Fermi-Level Position 82
6L8wsz CW 3.2 Dopant Atoms and Energy Levels 83
$~_TE\F1 3.2.1 Qualitative Description 83
^W;\faG 3.2.2 Ionization Energy 86
Lb(=:Z!{ 3.2.3 Group III-V Semiconductors 88
@<h@d_8^k 3.3 Carrier Distributions in the Extrinsic Semiconductor 89
,XR1N$LN8_ 3.3.1 Equilibrium Distribution of Electrons and Holes 89
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