《
半导体器件导论》(影印版)还尽量保持了原书的主要优点:(1)注重基本概念和方法。《半导体器件导论》(影印版)从内容的整体编排到具体章节的叙述,都体现了突出
物理概念、强调基本分析方法的指导思想。书中的数学推导和物理分析融为一体,得出的结论不仅对理解物理概念十分重要,而且经得起反复推敲。书中还采用了大量非常清晰的插图,帮助读者更好地理解基本概念。(2)可读性强,便于自学。全书脉络清楚,说理透彻,易于读者理解和掌握。每一章的开头都有引言,告诉读者可以从本章学到什么,应该掌握什么;每一章中都有例题和读者自测题;每一章的最后还有总结、复习提纲和大量
习题(其中包含一些采用计算机进行模拟计算的练习题)。通过举例和练习加深读者对基本概念的理解是《半导体器件导论》(影印版)突出的特点。
y#e<]5I 《半导体器件导论》(影印版)是美国新墨西哥大学电机与计算机工程系Neamen教授所著的“SereicorlductorPhysics and Devices,3rd edition”一书的改进版本。
C6,W7M[c 与原书相比,《半导体器件导论》(影印版)更好地将固体晶格结构、量子力学入门知识、固体的量子理论以及半导体物理和半导体器件有机地结合在一起。利用《半导体器件导论》(影印版),学生只需要具有高等数学和大学普通物理的基础,用一个学期就可以系统地学习到半导体器件的基本理论,从而为进入微
电子学研究领域打下一个良好的基础。这一特点也是目前国内出版的同类教材很难达到的。
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&v_b7h %:.00F([r TM$`J Preface xvii
`LVX|l62 CHAPTER 1
D,'@b+B[ The Crystal Structure of Solids
<}Rr C#uiA 1.0 Preview 1
1He'\/# 1.1 Semiconductor Materials 2
ehls:)F 1.2 Types of Solids 3
-o0~xspF 1.3 Space Lattices 4
imf_@_ 1.3.1 Primitive and Unit Cell 4
; +]GyDgVq 1.3.2 Basic Crystal Structures 6
}U7><I 1.3.3 Crystal Planes and Miller Indices
]]bL;vlw 1.3.4 The Diamond Structure 13
.e%B' 1.4 Atomic Bonding 15
dg42K`E 1.5 Imperfections and Impurities in Solids 17
i6h , Aw3 1.5.1 Imperfections in Solids 17
gj Ue{cb5 1.5.2 Impurities in Solids 18
}\!38{& 1.6 Growth of Semiconductor Materials 19
LP:C9Ol\ 1.6.1 Growth from a Melt 20
&+Pcu5 1.6.2 Epitaxial Growth 22
'm+)n08[ 1.7 Device Fabrication Techniques:
kculHIa\. Oxidation 23
Wtwh.\Jba 1.8 Summary 25
cLe659 & Problems 27
H?axlRmw3 CHAPTER 2
lTpmoDa% Theory of Solids 31
slMWk;fmD} 2.0 Preview 31
O
hcPlr 2.1 Principles of Quantum Mechanics 32
~ugK&0i[2 2.1.1 Energy Quanta 32
Y r^C+Oyg 2.1.2 Wave-Particle Duality Principle 34
@[4 Tdf 2.2 Energy Quantization and Probability Concepts 36
-kd_gbnr3 2.2.1 Physical Meaning of the Wave Function 36
`$D2w| 2.2.2 The One-Electron Atom 37
pV^hZ. 2.2.3 Periodic Table 40
r$~
f[cA 2.3 Energy-Band Theory 41
v-@xO&< 2.3.1 Formation of Energy Bands 41
,-*oc> 2.3.2 The Energy Band and the Bond Model 45
rTjV/~ 2.3.3 Charge Carriers——Electrons and Holes 47
G.a^nQ@e% 2.3.4 Effective Mass 49
)/F1,&/N`e 2.3.5 Metals, Insulators, and Semiconductors 50
niV= Ijt{5 2.3.6 The k-Space Diagram 52
7:t
*&$ 2,4 Density of States Function 55
(s`yMUC+ 2.5 Statistical Mechanics 57
PO[
AP%; 2.5.1 Statistical Laws 57
%maLo RJ 2.5.2 The Fermi-Dirac Distribution Function
RWi~34r and the Fermi Energy 58
438+zU 2.5.3 Maxwell-Boltzmann Approximation 62
Yg6 f 2.6 Summary 64
EV 8}C= Problems 65
V{[vIt* CHAPTER 3
7uQ-:n The Semiconductor in Equilibrium 70
?qt>;o|Ue 3.0 Preview 70
jnuovM!x~ 3.1 Charge Carriers in Semiconductors 71
6
2r%q^r`i 3.1.1 Equilibrium Distribution of Electrons and Holes 72
u@$C i/J* 3.1.2 The no and Po Equations 74
{uRnZ/m 3.1.3 The Intrinsic Carrier Concentration 79
AtN=G"c>_ 3.1.4 The Intrinsic Fermi-Level Position 82
%Ln7{w 3.2 Dopant Atoms and Energy Levels 83
=%YU~ 3.2.1 Qualitative Description 83
m4~Co*]w 3.2.2 Ionization Energy 86
#eT{?_wM 3.2.3 Group III-V Semiconductors 88
`UpZk?k 3.3 Carrier Distributions in the Extrinsic Semiconductor 89
$b/oiy!=|3 3.3.1 Equilibrium Distribution of Electrons and Holes 89
F$FCfP7 ……
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