《
半导体器件导论》(影印版)还尽量保持了原书的主要优点:(1)注重基本概念和方法。《半导体器件导论》(影印版)从内容的整体编排到具体章节的叙述,都体现了突出
物理概念、强调基本分析方法的指导思想。书中的数学推导和物理分析融为一体,得出的结论不仅对理解物理概念十分重要,而且经得起反复推敲。书中还采用了大量非常清晰的插图,帮助读者更好地理解基本概念。(2)可读性强,便于自学。全书脉络清楚,说理透彻,易于读者理解和掌握。每一章的开头都有引言,告诉读者可以从本章学到什么,应该掌握什么;每一章中都有例题和读者自测题;每一章的最后还有总结、复习提纲和大量
习题(其中包含一些采用计算机进行模拟计算的练习题)。通过举例和练习加深读者对基本概念的理解是《半导体器件导论》(影印版)突出的特点。
fN1-d&T 《半导体器件导论》(影印版)是美国新墨西哥大学电机与计算机工程系Neamen教授所著的“SereicorlductorPhysics and Devices,3rd edition”一书的改进版本。
68C%B9.b' 与原书相比,《半导体器件导论》(影印版)更好地将固体晶格结构、量子力学入门知识、固体的量子理论以及半导体物理和半导体器件有机地结合在一起。利用《半导体器件导论》(影印版),学生只需要具有高等数学和大学普通物理的基础,用一个学期就可以系统地学习到半导体器件的基本理论,从而为进入微
电子学研究领域打下一个良好的基础。这一特点也是目前国内出版的同类教材很难达到的。
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8\A#CQ5b `Cynj+PCe Preface xvii
B!L{ CHAPTER 1
!Pfr,a The Crystal Structure of Solids
q Y?j#fzi 1.0 Preview 1
Pw`8Wj 1.1 Semiconductor Materials 2
R=2FNP 1.2 Types of Solids 3
,G?WAOy, 1.3 Space Lattices 4
E,x+JeKV 1.3.1 Primitive and Unit Cell 4
`%9 uE( 1.3.2 Basic Crystal Structures 6
bI9~jWgGp 1.3.3 Crystal Planes and Miller Indices
LG|fq/; 1.3.4 The Diamond Structure 13
~/iKh11 1.4 Atomic Bonding 15
aP@N)" 1.5 Imperfections and Impurities in Solids 17
9x9 T<cx 1.5.1 Imperfections in Solids 17
2*l/3VW 1.5.2 Impurities in Solids 18
h_3E)jc 1.6 Growth of Semiconductor Materials 19
M; tqp8 1.6.1 Growth from a Melt 20
3J|F?M"N7 1.6.2 Epitaxial Growth 22
Q6!zZ))~ 1.7 Device Fabrication Techniques:
i^Y+?Sx Oxidation 23
RmeD$>7 1.8 Summary 25
yfjWbW Problems 27
?(F6#"/E CHAPTER 2
MKD1V8i Theory of Solids 31
)e=D(qd 2.0 Preview 31
u5b|#&-mX 2.1 Principles of Quantum Mechanics 32
Q%f^)HZGR 2.1.1 Energy Quanta 32
'9Xu
p 2.1.2 Wave-Particle Duality Principle 34
h-K_Lr] 2.2 Energy Quantization and Probability Concepts 36
-4IE]'## 2.2.1 Physical Meaning of the Wave Function 36
rCbDu&k] 2.2.2 The One-Electron Atom 37
jTtu0Q| 2.2.3 Periodic Table 40
;LPfXpR 2.3 Energy-Band Theory 41
b)5uf'?- 2.3.1 Formation of Energy Bands 41
Ru!iR#s)! 2.3.2 The Energy Band and the Bond Model 45
G+"t/?/ 2.3.3 Charge Carriers——Electrons and Holes 47
DIfaVo/" 2.3.4 Effective Mass 49
J~zUp(>K 2.3.5 Metals, Insulators, and Semiconductors 50
dI@(<R 2.3.6 The k-Space Diagram 52
:W.(S6O( 2,4 Density of States Function 55
{{D)YldtA 2.5 Statistical Mechanics 57
"W7K"=X 2.5.1 Statistical Laws 57
Ls$D$/:q? 2.5.2 The Fermi-Dirac Distribution Function
U}e!Wjrc and the Fermi Energy 58
PI:4m%[ 2.5.3 Maxwell-Boltzmann Approximation 62
O1U= X:Zl 2.6 Summary 64
Rn(ec Problems 65
t?-n*9,#S CHAPTER 3
Ml{Z
The Semiconductor in Equilibrium 70
aFb==73aLw 3.0 Preview 70
=_ ./~ 3.1 Charge Carriers in Semiconductors 71
{JO 3.1.1 Equilibrium Distribution of Electrons and Holes 72
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3.1.2 The no and Po Equations 74
L:pYn_ 3.1.3 The Intrinsic Carrier Concentration 79
r?lf($D* 3.1.4 The Intrinsic Fermi-Level Position 82
G )trG9 .a 3.2 Dopant Atoms and Energy Levels 83
Hz1%x 3.2.1 Qualitative Description 83
+\c5]` 3.2.2 Ionization Energy 86
mAj?>;R2$2 3.2.3 Group III-V Semiconductors 88
j_!F*yul 3.3 Carrier Distributions in the Extrinsic Semiconductor 89
7uS~MW 3.3.1 Equilibrium Distribution of Electrons and Holes 89
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