《
半导体器件导论》(影印版)还尽量保持了原书的主要优点:(1)注重基本概念和方法。《半导体器件导论》(影印版)从内容的整体编排到具体章节的叙述,都体现了突出
物理概念、强调基本分析方法的指导思想。书中的数学推导和物理分析融为一体,得出的结论不仅对理解物理概念十分重要,而且经得起反复推敲。书中还采用了大量非常清晰的插图,帮助读者更好地理解基本概念。(2)可读性强,便于自学。全书脉络清楚,说理透彻,易于读者理解和掌握。每一章的开头都有引言,告诉读者可以从本章学到什么,应该掌握什么;每一章中都有例题和读者自测题;每一章的最后还有总结、复习提纲和大量
习题(其中包含一些采用计算机进行模拟计算的练习题)。通过举例和练习加深读者对基本概念的理解是《半导体器件导论》(影印版)突出的特点。
sOb=+u$$9 《半导体器件导论》(影印版)是美国新墨西哥大学电机与计算机工程系Neamen教授所著的“SereicorlductorPhysics and Devices,3rd edition”一书的改进版本。
Fsi;[be$A 与原书相比,《半导体器件导论》(影印版)更好地将固体晶格结构、量子力学入门知识、固体的量子理论以及半导体物理和半导体器件有机地结合在一起。利用《半导体器件导论》(影印版),学生只需要具有高等数学和大学普通物理的基础,用一个学期就可以系统地学习到半导体器件的基本理论,从而为进入微
电子学研究领域打下一个良好的基础。这一特点也是目前国内出版的同类教材很难达到的。
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P&.-c _ E*G{V j Preface xvii
8h'*[-]70u CHAPTER 1
*)xjMTJ% The Crystal Structure of Solids
S<Od`I 1.0 Preview 1
||^+( 1.1 Semiconductor Materials 2
:/~TV 1.2 Types of Solids 3
{}DoRpq= 1.3 Space Lattices 4
;JV(!8[ 1.3.1 Primitive and Unit Cell 4
bv9nDNPD4 1.3.2 Basic Crystal Structures 6
:=e"D;5 1.3.3 Crystal Planes and Miller Indices
y\@INA^ 1.3.4 The Diamond Structure 13
w7`09oJm 1.4 Atomic Bonding 15
9`Zwa_Tni 1.5 Imperfections and Impurities in Solids 17
? uu, w 1.5.1 Imperfections in Solids 17
u)9YRMl 1.5.2 Impurities in Solids 18
+Vw]DLWR 1.6 Growth of Semiconductor Materials 19
\SyG#.$ 1.6.1 Growth from a Melt 20
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M!Xk? 1.6.2 Epitaxial Growth 22
:e!3-#H 1.7 Device Fabrication Techniques:
i>{.Y}; Oxidation 23
g\A kf 1.8 Summary 25
$9rQ w1#e Problems 27
ePscSMx& CHAPTER 2
Sgq" 3(+%, Theory of Solids 31
Bhg,P.7 2.0 Preview 31
-n~%v0D8c 2.1 Principles of Quantum Mechanics 32
O%*:fd,o- 2.1.1 Energy Quanta 32
++Fv )KY@ 2.1.2 Wave-Particle Duality Principle 34
3F?_{A 2.2 Energy Quantization and Probability Concepts 36
0@/C5 v 2.2.1 Physical Meaning of the Wave Function 36
`L7Cf&W\l8 2.2.2 The One-Electron Atom 37
/j"aOLL| 2.2.3 Periodic Table 40
,u^%[ejH 2.3 Energy-Band Theory 41
Qv;q*4_ 2.3.1 Formation of Energy Bands 41
{VT**o 2.3.2 The Energy Band and the Bond Model 45
/0(c-Dv 2.3.3 Charge Carriers——Electrons and Holes 47
>TG# 2.3.4 Effective Mass 49
"9O8#i<Nr 2.3.5 Metals, Insulators, and Semiconductors 50
h)h%y)1 2.3.6 The k-Space Diagram 52
SdNxSD$Q 2,4 Density of States Function 55
9" cyZO 2.5 Statistical Mechanics 57
8 c5=Px2\ 2.5.1 Statistical Laws 57
sOhKMz 2.5.2 The Fermi-Dirac Distribution Function
CS\8ej}y and the Fermi Energy 58
d5#z\E?? 2.5.3 Maxwell-Boltzmann Approximation 62
Tl L\&n.$ 2.6 Summary 64
9=.7[-6i9 Problems 65
N ,nvAM CHAPTER 3
#Q$e%VJ(c1 The Semiconductor in Equilibrium 70
VYnB&3%DF 3.0 Preview 70
79Ur1-]/ 3.1 Charge Carriers in Semiconductors 71
&?Z<"+B8S 3.1.1 Equilibrium Distribution of Electrons and Holes 72
a^7QHYJ6 3.1.2 The no and Po Equations 74
g4&f2D5 3.1.3 The Intrinsic Carrier Concentration 79
j9f[){m` 3.1.4 The Intrinsic Fermi-Level Position 82
eqk.+~^ 3.2 Dopant Atoms and Energy Levels 83
yi*EE% 3.2.1 Qualitative Description 83
lu;gmWz 3.2.2 Ionization Energy 86
5V8`-yO9 3.2.3 Group III-V Semiconductors 88
O:Wd
,3_ 3.3 Carrier Distributions in the Extrinsic Semiconductor 89
}fL
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