《
半导体器件导论》(影印版)还尽量保持了原书的主要优点:(1)注重基本概念和方法。《半导体器件导论》(影印版)从内容的整体编排到具体章节的叙述,都体现了突出
物理概念、强调基本分析方法的指导思想。书中的数学推导和物理分析融为一体,得出的结论不仅对理解物理概念十分重要,而且经得起反复推敲。书中还采用了大量非常清晰的插图,帮助读者更好地理解基本概念。(2)可读性强,便于自学。全书脉络清楚,说理透彻,易于读者理解和掌握。每一章的开头都有引言,告诉读者可以从本章学到什么,应该掌握什么;每一章中都有例题和读者自测题;每一章的最后还有总结、复习提纲和大量
习题(其中包含一些采用计算机进行模拟计算的练习题)。通过举例和练习加深读者对基本概念的理解是《半导体器件导论》(影印版)突出的特点。
:%Oz:YxC/ 《半导体器件导论》(影印版)是美国新墨西哥大学电机与计算机工程系Neamen教授所著的“SereicorlductorPhysics and Devices,3rd edition”一书的改进版本。
IJt'[&D 与原书相比,《半导体器件导论》(影印版)更好地将固体晶格结构、量子力学入门知识、固体的量子理论以及半导体物理和半导体器件有机地结合在一起。利用《半导体器件导论》(影印版),学生只需要具有高等数学和大学普通物理的基础,用一个学期就可以系统地学习到半导体器件的基本理论,从而为进入微
电子学研究领域打下一个良好的基础。这一特点也是目前国内出版的同类教材很难达到的。
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r<4j;"lQK |j81?4<)v Preface xvii
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4q'Q CHAPTER 1
nzaA_^`mB The Crystal Structure of Solids
+*Z'oC BJ, 1.0 Preview 1
{z\K!=X/ 1.1 Semiconductor Materials 2
_m[DieR 1.2 Types of Solids 3
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9 1.3 Space Lattices 4
T2/:C7zL 1.3.1 Primitive and Unit Cell 4
#UhH 1.3.2 Basic Crystal Structures 6
r@m]#4 1.3.3 Crystal Planes and Miller Indices
46pR!k 1.3.4 The Diamond Structure 13
KGcjZx04! 1.4 Atomic Bonding 15
cdh0b7tjn 1.5 Imperfections and Impurities in Solids 17
d#]hqy 1.5.1 Imperfections in Solids 17
=JW-EQ6[T 1.5.2 Impurities in Solids 18
d$n31F 1.6 Growth of Semiconductor Materials 19
fIl!{pv[ 1.6.1 Growth from a Melt 20
\1LfDlQk) 1.6.2 Epitaxial Growth 22
EEnl' 1.7 Device Fabrication Techniques:
9^ZtbmUf Oxidation 23
f*B-aj# 1.8 Summary 25
92t.@!m` Problems 27
\hZ%NLj CHAPTER 2
3F@P$4!#l Theory of Solids 31
o{! :N> ( 2.0 Preview 31
]gg(Z!|iQ 2.1 Principles of Quantum Mechanics 32
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| 2.1.1 Energy Quanta 32
kaXq. 2.1.2 Wave-Particle Duality Principle 34
QF\nf_X 2.2 Energy Quantization and Probability Concepts 36
q[C?1Kc.z 2.2.1 Physical Meaning of the Wave Function 36
&e@)yVLL 2.2.2 The One-Electron Atom 37
($kw*H{Ah^ 2.2.3 Periodic Table 40
?h&?`WO( 2.3 Energy-Band Theory 41
)S(Ly. 2.3.1 Formation of Energy Bands 41
"I)zi]vk 2.3.2 The Energy Band and the Bond Model 45
8\!E )M|4 2.3.3 Charge Carriers——Electrons and Holes 47
Y}v3J(l 2.3.4 Effective Mass 49
Hj|&P/jY]* 2.3.5 Metals, Insulators, and Semiconductors 50
TKv!wKI 2.3.6 The k-Space Diagram 52
w$6Z}M1d 2,4 Density of States Function 55
3,Yr%`/5' 2.5 Statistical Mechanics 57
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tl- 2.5.1 Statistical Laws 57
/De~K+w7o 2.5.2 The Fermi-Dirac Distribution Function
`vgaX,F* and the Fermi Energy 58
,d,2Q 2.5.3 Maxwell-Boltzmann Approximation 62
m|B= 2.6 Summary 64
sHc-xnd Problems 65
Lr D@QBT CHAPTER 3
jt on \9 The Semiconductor in Equilibrium 70
{V2"Pym? 3.0 Preview 70
@)uV Fw"\ 3.1 Charge Carriers in Semiconductors 71
?nGi if 3.1.1 Equilibrium Distribution of Electrons and Holes 72
8zD>t~N2C 3.1.2 The no and Po Equations 74
f4b9o[,s2e 3.1.3 The Intrinsic Carrier Concentration 79
v={{$=/t 3.1.4 The Intrinsic Fermi-Level Position 82
1wKXOy=v0 3.2 Dopant Atoms and Energy Levels 83
L|T?,^ 3.2.1 Qualitative Description 83
R-S<7Q3E0= 3.2.2 Ionization Energy 86
p8_^6wfg 3.2.3 Group III-V Semiconductors 88
0H}tb}4 3.3 Carrier Distributions in the Extrinsic Semiconductor 89
z6C(?R 3.3.1 Equilibrium Distribution of Electrons and Holes 89
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