《
半导体器件导论》(影印版)还尽量保持了原书的主要优点:(1)注重基本概念和方法。《半导体器件导论》(影印版)从内容的整体编排到具体章节的叙述,都体现了突出
物理概念、强调基本分析方法的指导思想。书中的数学推导和物理分析融为一体,得出的结论不仅对理解物理概念十分重要,而且经得起反复推敲。书中还采用了大量非常清晰的插图,帮助读者更好地理解基本概念。(2)可读性强,便于自学。全书脉络清楚,说理透彻,易于读者理解和掌握。每一章的开头都有引言,告诉读者可以从本章学到什么,应该掌握什么;每一章中都有例题和读者自测题;每一章的最后还有总结、复习提纲和大量
习题(其中包含一些采用计算机进行模拟计算的练习题)。通过举例和练习加深读者对基本概念的理解是《半导体器件导论》(影印版)突出的特点。
}sS1p6z 《半导体器件导论》(影印版)是美国新墨西哥大学电机与计算机工程系Neamen教授所著的“SereicorlductorPhysics and Devices,3rd edition”一书的改进版本。
UHUO9h 与原书相比,《半导体器件导论》(影印版)更好地将固体晶格结构、量子力学入门知识、固体的量子理论以及半导体物理和半导体器件有机地结合在一起。利用《半导体器件导论》(影印版),学生只需要具有高等数学和大学普通物理的基础,用一个学期就可以系统地学习到半导体器件的基本理论,从而为进入微
电子学研究领域打下一个良好的基础。这一特点也是目前国内出版的同类教材很难达到的。
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x+5y287# ]6 {\`a .:#6dG\0z Preface xvii
@Ao E> CHAPTER 1
},LW@Z} The Crystal Structure of Solids
n;Etn!4M 1.0 Preview 1
j>OB<4?.+ 1.1 Semiconductor Materials 2
r#[YBaCZJ 1.2 Types of Solids 3
0,`$ KbV\ 1.3 Space Lattices 4
F
/:2+ 1.3.1 Primitive and Unit Cell 4
c F(]`49( 1.3.2 Basic Crystal Structures 6
'%"#] 1.3.3 Crystal Planes and Miller Indices
v{2Vg 1.3.4 The Diamond Structure 13
O(E-ox~q 1.4 Atomic Bonding 15
W=~H_L?/ 1.5 Imperfections and Impurities in Solids 17
"ci<W_lx 1.5.1 Imperfections in Solids 17
\;A\ vQ[ 1.5.2 Impurities in Solids 18
&j7l#Urq 1.6 Growth of Semiconductor Materials 19
3It'!R8 $ 1.6.1 Growth from a Melt 20
ico(4KSk 1.6.2 Epitaxial Growth 22
b#C"rTw 1.7 Device Fabrication Techniques:
O({-lI Oxidation 23
}?Y+GT"E 1.8 Summary 25
s"|N-A=cS Problems 27
HiG&`:P>q CHAPTER 2
:8aIj_qds Theory of Solids 31
a;Y9wn 2.0 Preview 31
i4"xvLK4 2.1 Principles of Quantum Mechanics 32
9D_4]'KG 2.1.1 Energy Quanta 32
&7X0 ;< 2.1.2 Wave-Particle Duality Principle 34
-~h2^Oez 2.2 Energy Quantization and Probability Concepts 36
#|8!0]n' 2.2.1 Physical Meaning of the Wave Function 36
7c6-S@L 2.2.2 The One-Electron Atom 37
yXw xq(32 2.2.3 Periodic Table 40
.n`MPx' 2.3 Energy-Band Theory 41
pz^"~0o5 2.3.1 Formation of Energy Bands 41
EQ>bwEG 2.3.2 The Energy Band and the Bond Model 45
%;PPu$8K9 2.3.3 Charge Carriers——Electrons and Holes 47
+*
)Qi) 2.3.4 Effective Mass 49
+-#| M|a 2.3.5 Metals, Insulators, and Semiconductors 50
RS/%uxS? 2.3.6 The k-Space Diagram 52
)x"Z$ jIs 2,4 Density of States Function 55
6#5@d^a 2.5 Statistical Mechanics 57
[:!#F7O- 2.5.1 Statistical Laws 57
|P2GL3NR 2.5.2 The Fermi-Dirac Distribution Function
r/L3j0 and the Fermi Energy 58
b\?#O} 2.5.3 Maxwell-Boltzmann Approximation 62
$(}kau 2.6 Summary 64
);;UNO21+ Problems 65
7w{`f)~ CHAPTER 3
vVLR9"rHM The Semiconductor in Equilibrium 70
$zz=>BOk 3.0 Preview 70
-ij1%#t z 3.1 Charge Carriers in Semiconductors 71
)11/BB\v 3.1.1 Equilibrium Distribution of Electrons and Holes 72
:"O=/p+*Us 3.1.2 The no and Po Equations 74
e= "/oo 3.1.3 The Intrinsic Carrier Concentration 79
c e=6EYl 3.1.4 The Intrinsic Fermi-Level Position 82
> KH4X: 3.2 Dopant Atoms and Energy Levels 83
\{+7`4g 3.2.1 Qualitative Description 83
VV]{R' 3.2.2 Ionization Energy 86
7!JoP?! 3.2.3 Group III-V Semiconductors 88
8yFD2(# 3.3 Carrier Distributions in the Extrinsic Semiconductor 89
/IV:JVT 3.3.1 Equilibrium Distribution of Electrons and Holes 89
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