《
半导体器件导论》(影印版)还尽量保持了原书的主要优点:(1)注重基本概念和方法。《半导体器件导论》(影印版)从内容的整体编排到具体章节的叙述,都体现了突出
物理概念、强调基本分析方法的指导思想。书中的数学推导和物理分析融为一体,得出的结论不仅对理解物理概念十分重要,而且经得起反复推敲。书中还采用了大量非常清晰的插图,帮助读者更好地理解基本概念。(2)可读性强,便于自学。全书脉络清楚,说理透彻,易于读者理解和掌握。每一章的开头都有引言,告诉读者可以从本章学到什么,应该掌握什么;每一章中都有例题和读者自测题;每一章的最后还有总结、复习提纲和大量
习题(其中包含一些采用计算机进行模拟计算的练习题)。通过举例和练习加深读者对基本概念的理解是《半导体器件导论》(影印版)突出的特点。
:)i,K>y3i 《半导体器件导论》(影印版)是美国新墨西哥大学电机与计算机工程系Neamen教授所著的“SereicorlductorPhysics and Devices,3rd edition”一书的改进版本。
Il Qk W< 与原书相比,《半导体器件导论》(影印版)更好地将固体晶格结构、量子力学入门知识、固体的量子理论以及半导体物理和半导体器件有机地结合在一起。利用《半导体器件导论》(影印版),学生只需要具有高等数学和大学普通物理的基础,用一个学期就可以系统地学习到半导体器件的基本理论,从而为进入微
电子学研究领域打下一个良好的基础。这一特点也是目前国内出版的同类教材很难达到的。
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"z68 Preface xvii
^lt2,x CHAPTER 1
qZ'2M.; The Crystal Structure of Solids
lg8@^Pm$r; 1.0 Preview 1
:"MHmm=uU8 1.1 Semiconductor Materials 2
/,\U*'- 1.2 Types of Solids 3
tjt^R$[ @ 1.3 Space Lattices 4
Kei0>hBi 1.3.1 Primitive and Unit Cell 4
[^s;Ggi9 1.3.2 Basic Crystal Structures 6
+<.o,3 1.3.3 Crystal Planes and Miller Indices
]WY V 1.3.4 The Diamond Structure 13
CgmAxcK 1.4 Atomic Bonding 15
LWm1j:0 1.5 Imperfections and Impurities in Solids 17
?&-1(& 1.5.1 Imperfections in Solids 17
Jx~H4y=z 1.5.2 Impurities in Solids 18
8toOdh 1.6 Growth of Semiconductor Materials 19
&3Yj2Fw 1.6.1 Growth from a Melt 20
l cHf\~ 1.6.2 Epitaxial Growth 22
C\;l)h_{ 1.7 Device Fabrication Techniques:
h x&"f e Oxidation 23
) WbWp4 1.8 Summary 25
}x\#ul) Problems 27
"3\y~<8%' CHAPTER 2
;cvMNU$fN Theory of Solids 31
8-NycG&) 2.0 Preview 31
hPSMPbI 2.1 Principles of Quantum Mechanics 32
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dK 2.1.1 Energy Quanta 32
\cCH/ 2.1.2 Wave-Particle Duality Principle 34
((+XzV> 2.2 Energy Quantization and Probability Concepts 36
~ HhB@G!3 2.2.1 Physical Meaning of the Wave Function 36
tiE|%jOzt 2.2.2 The One-Electron Atom 37
+^+'.xQ 2.2.3 Periodic Table 40
Y|Q(JX 2.3 Energy-Band Theory 41
Fz';H 2.3.1 Formation of Energy Bands 41
3 a.!9R> 2.3.2 The Energy Band and the Bond Model 45
zmGHI!tP 2.3.3 Charge Carriers——Electrons and Holes 47
F5RL+rU(h 2.3.4 Effective Mass 49
't}\U&L.{ 2.3.5 Metals, Insulators, and Semiconductors 50
4r7F8*z 2.3.6 The k-Space Diagram 52
Jh 0Grq 2,4 Density of States Function 55
G(.G>8pf 2.5 Statistical Mechanics 57
o=_7KWOA 2.5.1 Statistical Laws 57
(87| :{ 2.5.2 The Fermi-Dirac Distribution Function
ioD8- and the Fermi Energy 58
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#."l 2.5.3 Maxwell-Boltzmann Approximation 62
i7-~"g 2.6 Summary 64
OU/}cu Problems 65
}LS8q CHAPTER 3
38p"lT The Semiconductor in Equilibrium 70
HzGwO^tbK 3.0 Preview 70
=Q40]>bpx 3.1 Charge Carriers in Semiconductors 71
&{.IUg 3.1.1 Equilibrium Distribution of Electrons and Holes 72
BP@tI| 3.1.2 The no and Po Equations 74
e' o2PW 3.1.3 The Intrinsic Carrier Concentration 79
9>w~B|/ 3.1.4 The Intrinsic Fermi-Level Position 82
RB+Jp 3.2 Dopant Atoms and Energy Levels 83
Au'y(KB 3.2.1 Qualitative Description 83
;&O?4?@4 3.2.2 Ionization Energy 86
HvG %## 3.2.3 Group III-V Semiconductors 88
d-B+s%>D 3.3 Carrier Distributions in the Extrinsic Semiconductor 89
2$5">%? 3.3.1 Equilibrium Distribution of Electrons and Holes 89
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