《
半导体器件导论》(影印版)还尽量保持了原书的主要优点:(1)注重基本概念和方法。《半导体器件导论》(影印版)从内容的整体编排到具体章节的叙述,都体现了突出
物理概念、强调基本分析方法的指导思想。书中的数学推导和物理分析融为一体,得出的结论不仅对理解物理概念十分重要,而且经得起反复推敲。书中还采用了大量非常清晰的插图,帮助读者更好地理解基本概念。(2)可读性强,便于自学。全书脉络清楚,说理透彻,易于读者理解和掌握。每一章的开头都有引言,告诉读者可以从本章学到什么,应该掌握什么;每一章中都有例题和读者自测题;每一章的最后还有总结、复习提纲和大量
习题(其中包含一些采用计算机进行模拟计算的练习题)。通过举例和练习加深读者对基本概念的理解是《半导体器件导论》(影印版)突出的特点。
;nZN}&m
《半导体器件导论》(影印版)是美国新墨西哥大学电机与计算机工程系Neamen教授所著的“SereicorlductorPhysics and Devices,3rd edition”一书的改进版本。
8"KaW2/% 与原书相比,《半导体器件导论》(影印版)更好地将固体晶格结构、量子力学入门知识、固体的量子理论以及半导体物理和半导体器件有机地结合在一起。利用《半导体器件导论》(影印版),学生只需要具有高等数学和大学普通物理的基础,用一个学期就可以系统地学习到半导体器件的基本理论,从而为进入微
电子学研究领域打下一个良好的基础。这一特点也是目前国内出版的同类教材很难达到的。
Y=tx
kN i2Cw#x0s `&!J6)OJ 市场价:¥69.00
:y8wv|m 优惠价:¥55.20 为您节省:13.80元 (80折)
\A=:6R%Qb mQqv{1 iz5WWn^ Preface xvii
9Netnzv% CHAPTER 1
/.<2I The Crystal Structure of Solids
Y=YIz>u 1.0 Preview 1
zpM%L:S 1.1 Semiconductor Materials 2
9Bw.Ih[Z 1.2 Types of Solids 3
! C|VX,w 1.3 Space Lattices 4
zcE[wM 1.3.1 Primitive and Unit Cell 4
Sz#dld Mz 1.3.2 Basic Crystal Structures 6
*9I/h~I 1.3.3 Crystal Planes and Miller Indices
\\9$1yg 1.3.4 The Diamond Structure 13
5V"g,]'Nd 1.4 Atomic Bonding 15
P8=!/L2? 1.5 Imperfections and Impurities in Solids 17
|A% Jx__ 1.5.1 Imperfections in Solids 17
A0`#n|(Ad! 1.5.2 Impurities in Solids 18
Z+]Uw 1.6 Growth of Semiconductor Materials 19
/`vn/X^?^ 1.6.1 Growth from a Melt 20
_pe_w{V-b6 1.6.2 Epitaxial Growth 22
w0!4@ 1.7 Device Fabrication Techniques:
b$k|D)_| Oxidation 23
(S=RFd 1.8 Summary 25
R0_O/o+{ Problems 27
[6{o13mCWE CHAPTER 2
YNV4' Theory of Solids 31
>4@/x{{ 2.0 Preview 31
4 g}'/ 2.1 Principles of Quantum Mechanics 32
E0-<-w3' 2.1.1 Energy Quanta 32
UthH 2.1.2 Wave-Particle Duality Principle 34
sfwlv^ 2.2 Energy Quantization and Probability Concepts 36
I|oS`iLl$ 2.2.1 Physical Meaning of the Wave Function 36
^;=L|{Xl 2.2.2 The One-Electron Atom 37
NsY D~n 2.2.3 Periodic Table 40
6x 8P}? 2.3 Energy-Band Theory 41
E3==gYCe* 2.3.1 Formation of Energy Bands 41
JLFZy\ 2.3.2 The Energy Band and the Bond Model 45
/yn%0Wish 2.3.3 Charge Carriers——Electrons and Holes 47
ne(zGJd 2.3.4 Effective Mass 49
z-X_O32 2.3.5 Metals, Insulators, and Semiconductors 50
1?j['~aE 2.3.6 The k-Space Diagram 52
!Ey= 2,4 Density of States Function 55
Q>[Xm)jr: 2.5 Statistical Mechanics 57
a }m> 2.5.1 Statistical Laws 57
kvo V?<! 2.5.2 The Fermi-Dirac Distribution Function
x{.+i' and the Fermi Energy 58
DpZO$5.Ec+ 2.5.3 Maxwell-Boltzmann Approximation 62
vl67Xtk4 2.6 Summary 64
1*o=I-nOa Problems 65
j|/4V CHAPTER 3
M7JQw/,xs The Semiconductor in Equilibrium 70
^^C@W?.z 3.0 Preview 70
JX! @j3 3.1 Charge Carriers in Semiconductors 71
DbH"e 3.1.1 Equilibrium Distribution of Electrons and Holes 72
^w(~gQ6|mP 3.1.2 The no and Po Equations 74
'gQ0=6(\ 3.1.3 The Intrinsic Carrier Concentration 79
aF
(L_ 3.1.4 The Intrinsic Fermi-Level Position 82
~R!M.gY[rK 3.2 Dopant Atoms and Energy Levels 83
B=p6pf 3.2.1 Qualitative Description 83
2V6kCy@V 3.2.2 Ionization Energy 86
4`M7
3k0 3.2.3 Group III-V Semiconductors 88
wTw)GV4 3.3 Carrier Distributions in the Extrinsic Semiconductor 89
*eLKD_D`!C 3.3.1 Equilibrium Distribution of Electrons and Holes 89
HZDeQx`*s ……
]dj
W^C]94 市场价:¥69.00
?0%3~E`l: 优惠价:¥55.20 为您节省:13.80元 (80折)
! O~: