《
半导体器件导论》(影印版)还尽量保持了原书的主要优点:(1)注重基本概念和方法。《半导体器件导论》(影印版)从内容的整体编排到具体章节的叙述,都体现了突出
物理概念、强调基本分析方法的指导思想。书中的数学推导和物理分析融为一体,得出的结论不仅对理解物理概念十分重要,而且经得起反复推敲。书中还采用了大量非常清晰的插图,帮助读者更好地理解基本概念。(2)可读性强,便于自学。全书脉络清楚,说理透彻,易于读者理解和掌握。每一章的开头都有引言,告诉读者可以从本章学到什么,应该掌握什么;每一章中都有例题和读者自测题;每一章的最后还有总结、复习提纲和大量
习题(其中包含一些采用计算机进行模拟计算的练习题)。通过举例和练习加深读者对基本概念的理解是《半导体器件导论》(影印版)突出的特点。
Xwu&K8q21 《半导体器件导论》(影印版)是美国新墨西哥大学电机与计算机工程系Neamen教授所著的“SereicorlductorPhysics and Devices,3rd edition”一书的改进版本。
e NH9`Aa 与原书相比,《半导体器件导论》(影印版)更好地将固体晶格结构、量子力学入门知识、固体的量子理论以及半导体物理和半导体器件有机地结合在一起。利用《半导体器件导论》(影印版),学生只需要具有高等数学和大学普通物理的基础,用一个学期就可以系统地学习到半导体器件的基本理论,从而为进入微
电子学研究领域打下一个良好的基础。这一特点也是目前国内出版的同类教材很难达到的。
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Gr}NgyT<!D AuM}L&`i^ Preface xvii
A42!%>PB CHAPTER 1
_d^d1Q}V The Crystal Structure of Solids
\J#&]o)Y 1.0 Preview 1
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-."F 1.1 Semiconductor Materials 2
*)?'! 1.2 Types of Solids 3
"&`>+Yw 1.3 Space Lattices 4
'6g-]rE[ 1.3.1 Primitive and Unit Cell 4
Y]`o-dV 1.3.2 Basic Crystal Structures 6
92C; a5s 1.3.3 Crystal Planes and Miller Indices
6f
t6;*, 1.3.4 The Diamond Structure 13
.!+7|us8l\ 1.4 Atomic Bonding 15
k}qCkm27 1.5 Imperfections and Impurities in Solids 17
f<oU"WM 1.5.1 Imperfections in Solids 17
Brd9"M|d 1.5.2 Impurities in Solids 18
z TPNQ0=| 1.6 Growth of Semiconductor Materials 19
'R-g:X\{ 1.6.1 Growth from a Melt 20
\"L0d1DK) 1.6.2 Epitaxial Growth 22
A@:U|)+4 1.7 Device Fabrication Techniques:
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Oxidation 23
|TQ4:P1T 1.8 Summary 25
%<p/s;eu Problems 27
QUZ+#*:s CHAPTER 2
'mm>E Theory of Solids 31
1U^KN~! 2.0 Preview 31
A>mk0P)~Q 2.1 Principles of Quantum Mechanics 32
cF EO} 2.1.1 Energy Quanta 32
Jf#-OlEQ 2.1.2 Wave-Particle Duality Principle 34
8<ev5af 2.2 Energy Quantization and Probability Concepts 36
<c<!|<x 2.2.1 Physical Meaning of the Wave Function 36
Lm<WT*@ 2.2.2 The One-Electron Atom 37
=[Z3]#h 2.2.3 Periodic Table 40
}L%2K"8?} 2.3 Energy-Band Theory 41
'n\P S,[1R 2.3.1 Formation of Energy Bands 41
,)TnIByM 2.3.2 The Energy Band and the Bond Model 45
9HPwl 2.3.3 Charge Carriers——Electrons and Holes 47
MR5[|kHJT 2.3.4 Effective Mass 49
.RAyi>\e 2.3.5 Metals, Insulators, and Semiconductors 50
xsy45az<ip 2.3.6 The k-Space Diagram 52
Bc-/s(/Eq 2,4 Density of States Function 55
=1VZcLNt 2.5 Statistical Mechanics 57
M)Z!W3 2.5.1 Statistical Laws 57
S,avvY.U\ 2.5.2 The Fermi-Dirac Distribution Function
\!w | and the Fermi Energy 58
P*U^,Jh< 2.5.3 Maxwell-Boltzmann Approximation 62
>M##q?. 2.6 Summary 64
>pJ#b= Problems 65
~v:IgS CHAPTER 3
GZn=Hgv8 The Semiconductor in Equilibrium 70
hd(TKFL^y 3.0 Preview 70
a<E9@ 3.1 Charge Carriers in Semiconductors 71
Dbq/t^ 3.1.1 Equilibrium Distribution of Electrons and Holes 72
.!i`YT*jF 3.1.2 The no and Po Equations 74
^|hVFM2 3.1.3 The Intrinsic Carrier Concentration 79
>LH}A6dUC 3.1.4 The Intrinsic Fermi-Level Position 82
f|F=)tJO 3.2 Dopant Atoms and Energy Levels 83
=*zde0T?l 3.2.1 Qualitative Description 83
8Z"f" 3.2.2 Ionization Energy 86
-XK;B--c 3.2.3 Group III-V Semiconductors 88
p&)d]oV> 3.3 Carrier Distributions in the Extrinsic Semiconductor 89
R?tjobk! 3.3.1 Equilibrium Distribution of Electrons and Holes 89
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