《
半导体器件导论》(影印版)还尽量保持了原书的主要优点:(1)注重基本概念和方法。《半导体器件导论》(影印版)从内容的整体编排到具体章节的叙述,都体现了突出
物理概念、强调基本分析方法的指导思想。书中的数学推导和物理分析融为一体,得出的结论不仅对理解物理概念十分重要,而且经得起反复推敲。书中还采用了大量非常清晰的插图,帮助读者更好地理解基本概念。(2)可读性强,便于自学。全书脉络清楚,说理透彻,易于读者理解和掌握。每一章的开头都有引言,告诉读者可以从本章学到什么,应该掌握什么;每一章中都有例题和读者自测题;每一章的最后还有总结、复习提纲和大量
习题(其中包含一些采用计算机进行模拟计算的练习题)。通过举例和练习加深读者对基本概念的理解是《半导体器件导论》(影印版)突出的特点。
l|`9:H 《半导体器件导论》(影印版)是美国新墨西哥大学电机与计算机工程系Neamen教授所著的“SereicorlductorPhysics and Devices,3rd edition”一书的改进版本。
;.sl*q1A 与原书相比,《半导体器件导论》(影印版)更好地将固体晶格结构、量子力学入门知识、固体的量子理论以及半导体物理和半导体器件有机地结合在一起。利用《半导体器件导论》(影印版),学生只需要具有高等数学和大学普通物理的基础,用一个学期就可以系统地学习到半导体器件的基本理论,从而为进入微
电子学研究领域打下一个良好的基础。这一特点也是目前国内出版的同类教材很难达到的。
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GnXNCeE` T70QJ=, Preface xvii
o;"OSp CHAPTER 1
k`HP"H The Crystal Structure of Solids
|xr%6 [Ff 1.0 Preview 1
yj6@7@l>A 1.1 Semiconductor Materials 2
u]^N&2UW 1.2 Types of Solids 3
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K 1.3 Space Lattices 4
UnDgu4#R`A 1.3.1 Primitive and Unit Cell 4
iyZZ}M 1.3.2 Basic Crystal Structures 6
Hk_y/97OO 1.3.3 Crystal Planes and Miller Indices
inPJ2uBD\^ 1.3.4 The Diamond Structure 13
TfxwVPX 1.4 Atomic Bonding 15
!;@_VWR 1.5 Imperfections and Impurities in Solids 17
:A46~UA!$ 1.5.1 Imperfections in Solids 17
egR9AEJvz 1.5.2 Impurities in Solids 18
=bh*[,- 1.6 Growth of Semiconductor Materials 19
;Lw{XqT 1.6.1 Growth from a Melt 20
( fD
;g9 1.6.2 Epitaxial Growth 22
d&cU* 1.7 Device Fabrication Techniques:
HJ?+A-n/ Oxidation 23
\hO2p6 1.8 Summary 25
Uv_N x10 Problems 27
39U5jj7i CHAPTER 2
fa*Cpt: Theory of Solids 31
>4m'tZ8 2.0 Preview 31
vqslirC 2.1 Principles of Quantum Mechanics 32
%HQ.| 2.1.1 Energy Quanta 32
$ZPX]2D4B# 2.1.2 Wave-Particle Duality Principle 34
q+SD6qM 2.2 Energy Quantization and Probability Concepts 36
>M%\T}5 2.2.1 Physical Meaning of the Wave Function 36
:H6FPV78 2.2.2 The One-Electron Atom 37
:vx$vZb 2.2.3 Periodic Table 40
bo"%0?3n 2.3 Energy-Band Theory 41
T[k4lM 2.3.1 Formation of Energy Bands 41
uD_v! 2.3.2 The Energy Band and the Bond Model 45
8GPIZh'0h 2.3.3 Charge Carriers——Electrons and Holes 47
6SJ"Tni8 2.3.4 Effective Mass 49
";[iZ 2.3.5 Metals, Insulators, and Semiconductors 50
Mj>}zbpk/ 2.3.6 The k-Space Diagram 52
75!9FqMZ} 2,4 Density of States Function 55
'PZ|:9FX! 2.5 Statistical Mechanics 57
] U@o0 2.5.1 Statistical Laws 57
x"kjs.d7[< 2.5.2 The Fermi-Dirac Distribution Function
{s?M*_{| and the Fermi Energy 58
?)Nj c&G 2.5.3 Maxwell-Boltzmann Approximation 62
Rx07trfN 2.6 Summary 64
)'4P.>!!aQ Problems 65
Zt
-1h{7 CHAPTER 3
8rZ!ia! The Semiconductor in Equilibrium 70
.@)mxC:\K9 3.0 Preview 70
yZ]:y-1 3.1 Charge Carriers in Semiconductors 71
#H [Bb2(j 3.1.1 Equilibrium Distribution of Electrons and Holes 72
I:&/`K4,x, 3.1.2 The no and Po Equations 74
aIy*pmpD= 3.1.3 The Intrinsic Carrier Concentration 79
m8Vdb"0 3.1.4 The Intrinsic Fermi-Level Position 82
cHA7Kg ! 3.2 Dopant Atoms and Energy Levels 83
->z54 T
3.2.1 Qualitative Description 83
))D:8l@ 3.2.2 Ionization Energy 86
~na!@<zB{ 3.2.3 Group III-V Semiconductors 88
=rA~7+} 3.3 Carrier Distributions in the Extrinsic Semiconductor 89
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V6@#, 3.3.1 Equilibrium Distribution of Electrons and Holes 89
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