《
半导体器件导论》(影印版)还尽量保持了原书的主要优点:(1)注重基本概念和方法。《半导体器件导论》(影印版)从内容的整体编排到具体章节的叙述,都体现了突出
物理概念、强调基本分析方法的指导思想。书中的数学推导和物理分析融为一体,得出的结论不仅对理解物理概念十分重要,而且经得起反复推敲。书中还采用了大量非常清晰的插图,帮助读者更好地理解基本概念。(2)可读性强,便于自学。全书脉络清楚,说理透彻,易于读者理解和掌握。每一章的开头都有引言,告诉读者可以从本章学到什么,应该掌握什么;每一章中都有例题和读者自测题;每一章的最后还有总结、复习提纲和大量
习题(其中包含一些采用计算机进行模拟计算的练习题)。通过举例和练习加深读者对基本概念的理解是《半导体器件导论》(影印版)突出的特点。
H<Hrwy~ 《半导体器件导论》(影印版)是美国新墨西哥大学电机与计算机工程系Neamen教授所著的“SereicorlductorPhysics and Devices,3rd edition”一书的改进版本。
U{}!y3[wK 与原书相比,《半导体器件导论》(影印版)更好地将固体晶格结构、量子力学入门知识、固体的量子理论以及半导体物理和半导体器件有机地结合在一起。利用《半导体器件导论》(影印版),学生只需要具有高等数学和大学普通物理的基础,用一个学期就可以系统地学习到半导体器件的基本理论,从而为进入微
电子学研究领域打下一个良好的基础。这一特点也是目前国内出版的同类教材很难达到的。
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(]XbPW %[ /<+ Preface xvii
IA2GUnUhu CHAPTER 1
7]s%rya The Crystal Structure of Solids
G?/c/r G 1.0 Preview 1
w;+ br 1.1 Semiconductor Materials 2
+T2HE\ 1.2 Types of Solids 3
B+Z13;}B 1.3 Space Lattices 4
k2p'G')H 1.3.1 Primitive and Unit Cell 4
HIGNRm 1.3.2 Basic Crystal Structures 6
q^*6C[G B 1.3.3 Crystal Planes and Miller Indices
'gDe3@ci! 1.3.4 The Diamond Structure 13
4P%m>[ 1.4 Atomic Bonding 15
xnbsg!`;7W 1.5 Imperfections and Impurities in Solids 17
@rwU 1T33 1.5.1 Imperfections in Solids 17
DjwQ`MA 1.5.2 Impurities in Solids 18
{6O0.}q]& 1.6 Growth of Semiconductor Materials 19
sofu 1.6.1 Growth from a Melt 20
8%ik853` 1.6.2 Epitaxial Growth 22
P'tMu6+) 1.7 Device Fabrication Techniques:
Pz@/|&] Oxidation 23
K%gP5>y*9> 1.8 Summary 25
=VSkl;(O Problems 27
/.$L"u CHAPTER 2
c@(1:,R Theory of Solids 31
~+HoSXu@E 2.0 Preview 31
~;unpym' 2.1 Principles of Quantum Mechanics 32
%!y89x=E 2.1.1 Energy Quanta 32
j[XYj6*d 2.1.2 Wave-Particle Duality Principle 34
CCqT tp 2.2 Energy Quantization and Probability Concepts 36
_faJ B@a_ 2.2.1 Physical Meaning of the Wave Function 36
w!`Umll2 2.2.2 The One-Electron Atom 37
xmr|'}Pt[ 2.2.3 Periodic Table 40
+.@c{5J< 2.3 Energy-Band Theory 41
"K?Q 2.3.1 Formation of Energy Bands 41
ntGq"
o 2.3.2 The Energy Band and the Bond Model 45
y94kX:q 2.3.3 Charge Carriers——Electrons and Holes 47
K\&o2lo] 2.3.4 Effective Mass 49
Q\9K2=4 2.3.5 Metals, Insulators, and Semiconductors 50
|s=`w8p 2.3.6 The k-Space Diagram 52
zZ=$O-&% 2,4 Density of States Function 55
_ 08];M| 2.5 Statistical Mechanics 57
3.vgukkk5 2.5.1 Statistical Laws 57
aFY u}kl 2.5.2 The Fermi-Dirac Distribution Function
nbmc[!PwG and the Fermi Energy 58
=_PvrB 2' 2.5.3 Maxwell-Boltzmann Approximation 62
&?+WXL> 2.6 Summary 64
EGS%C%>l/o Problems 65
hz\WZ^ CHAPTER 3
<o0~H The Semiconductor in Equilibrium 70
I:$"E%
>= 3.0 Preview 70
+\`rmI 3.1 Charge Carriers in Semiconductors 71
M"U OgS 3.1.1 Equilibrium Distribution of Electrons and Holes 72
M35Ax],:^ 3.1.2 The no and Po Equations 74
6I |A-h 3.1.3 The Intrinsic Carrier Concentration 79
#?&0D>E?k 3.1.4 The Intrinsic Fermi-Level Position 82
8h.V4/? 3.2 Dopant Atoms and Energy Levels 83
{TAw)!R~ 3.2.1 Qualitative Description 83
1R*=.i%W 3.2.2 Ionization Energy 86
Y=2Un).& 3.2.3 Group III-V Semiconductors 88
C1QV[bJK 3.3 Carrier Distributions in the Extrinsic Semiconductor 89
EJm4xkYLj1 3.3.1 Equilibrium Distribution of Electrons and Holes 89
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