《
半导体器件导论》(影印版)还尽量保持了原书的主要优点:(1)注重基本概念和方法。《半导体器件导论》(影印版)从内容的整体编排到具体章节的叙述,都体现了突出
物理概念、强调基本分析方法的指导思想。书中的数学推导和物理分析融为一体,得出的结论不仅对理解物理概念十分重要,而且经得起反复推敲。书中还采用了大量非常清晰的插图,帮助读者更好地理解基本概念。(2)可读性强,便于自学。全书脉络清楚,说理透彻,易于读者理解和掌握。每一章的开头都有引言,告诉读者可以从本章学到什么,应该掌握什么;每一章中都有例题和读者自测题;每一章的最后还有总结、复习提纲和大量
习题(其中包含一些采用计算机进行模拟计算的练习题)。通过举例和练习加深读者对基本概念的理解是《半导体器件导论》(影印版)突出的特点。
ZC%;5O` 《半导体器件导论》(影印版)是美国新墨西哥大学电机与计算机工程系Neamen教授所著的“SereicorlductorPhysics and Devices,3rd edition”一书的改进版本。
m^\&v0 与原书相比,《半导体器件导论》(影印版)更好地将固体晶格结构、量子力学入门知识、固体的量子理论以及半导体物理和半导体器件有机地结合在一起。利用《半导体器件导论》(影印版),学生只需要具有高等数学和大学普通物理的基础,用一个学期就可以系统地学习到半导体器件的基本理论,从而为进入微
电子学研究领域打下一个良好的基础。这一特点也是目前国内出版的同类教材很难达到的。
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[7Q%c!e$ * 3GNcnb Preface xvii
yM}3u4FG CHAPTER 1
P:_bF>r ? The Crystal Structure of Solids
NiFe#SLA 1.0 Preview 1
+J85Re ` 1.1 Semiconductor Materials 2
0~EGrEt 1.2 Types of Solids 3
LzJ`@0RrX 1.3 Space Lattices 4
#1C]ZV] B 1.3.1 Primitive and Unit Cell 4
w=CzPNRHH! 1.3.2 Basic Crystal Structures 6
U {Knjo S 1.3.3 Crystal Planes and Miller Indices
|g>Q3E 1.3.4 The Diamond Structure 13
h-//v~V) 1.4 Atomic Bonding 15
|VzXcV-"8) 1.5 Imperfections and Impurities in Solids 17
2~4&4 1.5.1 Imperfections in Solids 17
c3Gy1#f:#2 1.5.2 Impurities in Solids 18
}OhSCH'o6 1.6 Growth of Semiconductor Materials 19
IRdR3X56 1.6.1 Growth from a Melt 20
0l4f%'f 1.6.2 Epitaxial Growth 22
-$kIVh 1.7 Device Fabrication Techniques:
Q)y5'u qZ Oxidation 23
#?k</~s6M` 1.8 Summary 25
J2 / 19'QE Problems 27
a'`?kBK7`U CHAPTER 2
MRw4?HqB Theory of Solids 31
;Xa
N 2.0 Preview 31
<[D>[ 2.1 Principles of Quantum Mechanics 32
w[D]\>QHa 2.1.1 Energy Quanta 32
Mvue>)g~> 2.1.2 Wave-Particle Duality Principle 34
hkyO_ns 2.2 Energy Quantization and Probability Concepts 36
2NJ\`1HZ\ 2.2.1 Physical Meaning of the Wave Function 36
liG|#ny{ 2.2.2 The One-Electron Atom 37
[=BMvP5 2.2.3 Periodic Table 40
Bu&9J(J1 2.3 Energy-Band Theory 41
z;dRzwL 2.3.1 Formation of Energy Bands 41
6bc\
)n` 2.3.2 The Energy Band and the Bond Model 45
;BqCjS%`N 2.3.3 Charge Carriers——Electrons and Holes 47
jVLJqWP'! 2.3.4 Effective Mass 49
%$kd`Rl} 2.3.5 Metals, Insulators, and Semiconductors 50
k0O5c[j 2.3.6 The k-Space Diagram 52
dWQB1Y*N 2,4 Density of States Function 55
y.I&x#(^ 2.5 Statistical Mechanics 57
*Ti"8^`6 2.5.1 Statistical Laws 57
<YtjE!2 2.5.2 The Fermi-Dirac Distribution Function
^iBIp# and the Fermi Energy 58
122s7A 2.5.3 Maxwell-Boltzmann Approximation 62
4Ngp - 2.6 Summary 64
c|`$
h Problems 65
GB^ `A CHAPTER 3
P$0c{B4I The Semiconductor in Equilibrium 70
;x2o|#`b 3.0 Preview 70
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$DGe 3.1 Charge Carriers in Semiconductors 71
<G|i5/|7 3.1.1 Equilibrium Distribution of Electrons and Holes 72
r#2Fk&Z9 3.1.2 The no and Po Equations 74
JB].ht 3.1.3 The Intrinsic Carrier Concentration 79
z6l'v~\ 3.1.4 The Intrinsic Fermi-Level Position 82
4p-"1 c$ 3.2 Dopant Atoms and Energy Levels 83
I#M>b:"te 3.2.1 Qualitative Description 83
{:("oK6w 3.2.2 Ionization Energy 86
d@1^U9sf 3.2.3 Group III-V Semiconductors 88
rm9>gKN;# 3.3 Carrier Distributions in the Extrinsic Semiconductor 89
L'S,=NYXY 3.3.1 Equilibrium Distribution of Electrons and Holes 89
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