《
半导体器件导论》(影印版)还尽量保持了原书的主要优点:(1)注重基本概念和方法。《半导体器件导论》(影印版)从内容的整体编排到具体章节的叙述,都体现了突出
物理概念、强调基本分析方法的指导思想。书中的数学推导和物理分析融为一体,得出的结论不仅对理解物理概念十分重要,而且经得起反复推敲。书中还采用了大量非常清晰的插图,帮助读者更好地理解基本概念。(2)可读性强,便于自学。全书脉络清楚,说理透彻,易于读者理解和掌握。每一章的开头都有引言,告诉读者可以从本章学到什么,应该掌握什么;每一章中都有例题和读者自测题;每一章的最后还有总结、复习提纲和大量
习题(其中包含一些采用计算机进行模拟计算的练习题)。通过举例和练习加深读者对基本概念的理解是《半导体器件导论》(影印版)突出的特点。
DxFmsjX[L 《半导体器件导论》(影印版)是美国新墨西哥大学电机与计算机工程系Neamen教授所著的“SereicorlductorPhysics and Devices,3rd edition”一书的改进版本。
8%@![$q<g 与原书相比,《半导体器件导论》(影印版)更好地将固体晶格结构、量子力学入门知识、固体的量子理论以及半导体物理和半导体器件有机地结合在一起。利用《半导体器件导论》(影印版),学生只需要具有高等数学和大学普通物理的基础,用一个学期就可以系统地学习到半导体器件的基本理论,从而为进入微
电子学研究领域打下一个良好的基础。这一特点也是目前国内出版的同类教材很难达到的。
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2~*J<iO&l t==CdCl Preface xvii
TQ/EH~Sz CHAPTER 1
U/W<Sa\` The Crystal Structure of Solids
E=H>|FgS 1.0 Preview 1
g[NmVY-o 1.1 Semiconductor Materials 2
b6mSPH@ 1.2 Types of Solids 3
\-]zXKl2k 1.3 Space Lattices 4
e;*GbXd| 1.3.1 Primitive and Unit Cell 4
= 02$Dwr 1.3.2 Basic Crystal Structures 6
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} 1.3.3 Crystal Planes and Miller Indices
4dEfXrMf 1.3.4 The Diamond Structure 13
#K:!s<_" 1.4 Atomic Bonding 15
B#|c$s{ 1.5 Imperfections and Impurities in Solids 17
bvxol\7 ; 1.5.1 Imperfections in Solids 17
/tG0"1{ 1.5.2 Impurities in Solids 18
JJHfg) 1.6 Growth of Semiconductor Materials 19
_+OnH!G0 1.6.1 Growth from a Melt 20
-KuC31s_W 1.6.2 Epitaxial Growth 22
QgR3kc^7/ 1.7 Device Fabrication Techniques:
Q.]$t
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Y#/mE!& 1.8 Summary 25
z154lY}K Problems 27
Z}8khNCYr CHAPTER 2
*&=sL Theory of Solids 31
^5MPK@)c,/ 2.0 Preview 31
zF)&o} 2.1 Principles of Quantum Mechanics 32
o4^|n1vN 2.1.1 Energy Quanta 32
)U?5O$M;lE 2.1.2 Wave-Particle Duality Principle 34
s U|\? pJ 2.2 Energy Quantization and Probability Concepts 36
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<GV-l 2.2.1 Physical Meaning of the Wave Function 36
>-%}'iz+ 2.2.2 The One-Electron Atom 37
i40'U?eG~6 2.2.3 Periodic Table 40
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'$W$()p 2.3 Energy-Band Theory 41
@(m+B\ 2.3.1 Formation of Energy Bands 41
`X:o]t@ 2.3.2 The Energy Band and the Bond Model 45
K&\
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.Wr%l$~ 2.3.4 Effective Mass 49
b-`=^ny)K 2.3.5 Metals, Insulators, and Semiconductors 50
}Ai_peO0a 2.3.6 The k-Space Diagram 52
=o!1}'1 }} 2,4 Density of States Function 55
Fv<^\q 2.5 Statistical Mechanics 57
:rBPgrt 2.5.1 Statistical Laws 57
m\0Xh* 2.5.2 The Fermi-Dirac Distribution Function
5}+&Em": and the Fermi Energy 58
Mur)' 2.5.3 Maxwell-Boltzmann Approximation 62
N4xCZb 2.6 Summary 64
H;~Lv;,g, Problems 65
|h7 d#V> CHAPTER 3
YV{^2)^ The Semiconductor in Equilibrium 70
SyB2A\A 3.0 Preview 70
}%T8?d] 3.1 Charge Carriers in Semiconductors 71
]SO-NR 3.1.1 Equilibrium Distribution of Electrons and Holes 72
' 1 }ybSG 3.1.2 The no and Po Equations 74
X%Lhu6F 3.1.3 The Intrinsic Carrier Concentration 79
z>6hK:27 3.1.4 The Intrinsic Fermi-Level Position 82
j6JK4{ 3.2 Dopant Atoms and Energy Levels 83
&tJ!cTA.- 3.2.1 Qualitative Description 83
LwI A4$d 3.2.2 Ionization Energy 86
O7Z?y* 3.2.3 Group III-V Semiconductors 88
UqA<rW 3.3 Carrier Distributions in the Extrinsic Semiconductor 89
f i_'Ny># 3.3.1 Equilibrium Distribution of Electrons and Holes 89
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