《
半导体器件导论》(影印版)还尽量保持了原书的主要优点:(1)注重基本概念和方法。《半导体器件导论》(影印版)从内容的整体编排到具体章节的叙述,都体现了突出
物理概念、强调基本分析方法的指导思想。书中的数学推导和物理分析融为一体,得出的结论不仅对理解物理概念十分重要,而且经得起反复推敲。书中还采用了大量非常清晰的插图,帮助读者更好地理解基本概念。(2)可读性强,便于自学。全书脉络清楚,说理透彻,易于读者理解和掌握。每一章的开头都有引言,告诉读者可以从本章学到什么,应该掌握什么;每一章中都有例题和读者自测题;每一章的最后还有总结、复习提纲和大量
习题(其中包含一些采用计算机进行模拟计算的练习题)。通过举例和练习加深读者对基本概念的理解是《半导体器件导论》(影印版)突出的特点。
]>T4\?aC 《半导体器件导论》(影印版)是美国新墨西哥大学电机与计算机工程系Neamen教授所著的“SereicorlductorPhysics and Devices,3rd edition”一书的改进版本。
I[g;p8jr 与原书相比,《半导体器件导论》(影印版)更好地将固体晶格结构、量子力学入门知识、固体的量子理论以及半导体物理和半导体器件有机地结合在一起。利用《半导体器件导论》(影印版),学生只需要具有高等数学和大学普通物理的基础,用一个学期就可以系统地学习到半导体器件的基本理论,从而为进入微
电子学研究领域打下一个良好的基础。这一特点也是目前国内出版的同类教材很难达到的。
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%++V Preface xvii
NpLO_- CHAPTER 1
2Y-NxW^] The Crystal Structure of Solids
'Z{_ws 1.0 Preview 1
$kD;*v= 1.1 Semiconductor Materials 2
6a MG!_jC 1.2 Types of Solids 3
, b;WCWm 1.3 Space Lattices 4
WUfPLY_c( 1.3.1 Primitive and Unit Cell 4
W!=X_ 1.3.2 Basic Crystal Structures 6
PgMU|O7To 1.3.3 Crystal Planes and Miller Indices
#=V[vbTY 1.3.4 The Diamond Structure 13
EG;y@\] 1.4 Atomic Bonding 15
RASPOc/] 1.5 Imperfections and Impurities in Solids 17
ed\umQ] 1.5.1 Imperfections in Solids 17
h,!`2_&UQ 1.5.2 Impurities in Solids 18
zu52]$Vj 1.6 Growth of Semiconductor Materials 19
p~bx 1.6.1 Growth from a Melt 20
I|eYeJ3 1.6.2 Epitaxial Growth 22
XhEJF ! 1.7 Device Fabrication Techniques:
[!'fE#"a Oxidation 23
,)beK*Iw 1.8 Summary 25
}\Ri:&? Problems 27
6-6ha7]s CHAPTER 2
u+_6V Theory of Solids 31
xk\n F0z 2.0 Preview 31
Z^_-LX:% 2.1 Principles of Quantum Mechanics 32
\YMe&[C:o 2.1.1 Energy Quanta 32
d:&=|kKw 2.1.2 Wave-Particle Duality Principle 34
U5!~@XjG> 2.2 Energy Quantization and Probability Concepts 36
kh5VuXpe 2.2.1 Physical Meaning of the Wave Function 36
wRsh@I< 2.2.2 The One-Electron Atom 37
ra]lC7<H 2.2.3 Periodic Table 40
yc:y}" 2.3 Energy-Band Theory 41
(5\VOCT>4% 2.3.1 Formation of Energy Bands 41
}Y`D^z~ 2.3.2 The Energy Band and the Bond Model 45
MIx,#]C& 2.3.3 Charge Carriers——Electrons and Holes 47
P g.j] 2.3.4 Effective Mass 49
~[ZRE @ 2.3.5 Metals, Insulators, and Semiconductors 50
.tQeOZW' 2.3.6 The k-Space Diagram 52
4mM?RGWv 2,4 Density of States Function 55
lFT`
WO 2.5 Statistical Mechanics 57
viXt]0 2.5.1 Statistical Laws 57
nd3n 'b 2.5.2 The Fermi-Dirac Distribution Function
ve&"x Nz< and the Fermi Energy 58
C(!A% > 2.5.3 Maxwell-Boltzmann Approximation 62
nA4PY] 2.6 Summary 64
1wTPT,k Problems 65
(@nEe? CHAPTER 3
RIV
+ _}R The Semiconductor in Equilibrium 70
O+ghw1/ 3.0 Preview 70
@F/yc 3.1 Charge Carriers in Semiconductors 71
<!G%P4) 3.1.1 Equilibrium Distribution of Electrons and Holes 72
'J1!P:tJ 3.1.2 The no and Po Equations 74
cD JeYduK 3.1.3 The Intrinsic Carrier Concentration 79
e?yrx6 3.1.4 The Intrinsic Fermi-Level Position 82
mi'3ibCG 3.2 Dopant Atoms and Energy Levels 83
rZ:-%#Q4 3.2.1 Qualitative Description 83
3Q:Hzq G 3.2.2 Ionization Energy 86
45aFH}w: 3.2.3 Group III-V Semiconductors 88
W:S?_JM 3.3 Carrier Distributions in the Extrinsic Semiconductor 89
hj+iB,8 3.3.1 Equilibrium Distribution of Electrons and Holes 89
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