《
半导体器件导论》(影印版)还尽量保持了原书的主要优点:(1)注重基本概念和方法。《半导体器件导论》(影印版)从内容的整体编排到具体章节的叙述,都体现了突出
物理概念、强调基本分析方法的指导思想。书中的数学推导和物理分析融为一体,得出的结论不仅对理解物理概念十分重要,而且经得起反复推敲。书中还采用了大量非常清晰的插图,帮助读者更好地理解基本概念。(2)可读性强,便于自学。全书脉络清楚,说理透彻,易于读者理解和掌握。每一章的开头都有引言,告诉读者可以从本章学到什么,应该掌握什么;每一章中都有例题和读者自测题;每一章的最后还有总结、复习提纲和大量
习题(其中包含一些采用计算机进行模拟计算的练习题)。通过举例和练习加深读者对基本概念的理解是《半导体器件导论》(影印版)突出的特点。
G_,9h!e 《半导体器件导论》(影印版)是美国新墨西哥大学电机与计算机工程系Neamen教授所著的“SereicorlductorPhysics and Devices,3rd edition”一书的改进版本。
j"aY\cLr t 与原书相比,《半导体器件导论》(影印版)更好地将固体晶格结构、量子力学入门知识、固体的量子理论以及半导体物理和半导体器件有机地结合在一起。利用《半导体器件导论》(影印版),学生只需要具有高等数学和大学普通物理的基础,用一个学期就可以系统地学习到半导体器件的基本理论,从而为进入微
电子学研究领域打下一个良好的基础。这一特点也是目前国内出版的同类教材很难达到的。
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[#RFdn< )0ydSz`B Preface xvii
URg;e M# CHAPTER 1
U zc p The Crystal Structure of Solids
au/LoO#6Ro 1.0 Preview 1
gmgri 1.1 Semiconductor Materials 2
Xt$P!~Lu 1.2 Types of Solids 3
-2 >s#/% 1.3 Space Lattices 4
EP>Lh7E9n 1.3.1 Primitive and Unit Cell 4
R=<::2_Y96 1.3.2 Basic Crystal Structures 6
hliO/3g 1.3.3 Crystal Planes and Miller Indices
dJ Q K|/ 1.3.4 The Diamond Structure 13
ViMl{3 1.4 Atomic Bonding 15
"DfjUk 1.5 Imperfections and Impurities in Solids 17
>]ZE<. 1.5.1 Imperfections in Solids 17
Us!ZQ#pP 1.5.2 Impurities in Solids 18
]Y!Fz<-;P 1.6 Growth of Semiconductor Materials 19
l U4 I* 1.6.1 Growth from a Melt 20
m-ibS: 1.6.2 Epitaxial Growth 22
}LKD9U5;8 1.7 Device Fabrication Techniques:
FQ1B%u| Oxidation 23
a:`<=^:4, 1.8 Summary 25
mH0OW Problems 27
~:o$}`mW CHAPTER 2
D}lqd Ja Theory of Solids 31
/4 OmnE; 2.0 Preview 31
C;K+ITlJ 2.1 Principles of Quantum Mechanics 32
.%e>>U>F 2.1.1 Energy Quanta 32
q5= ,\S3= 2.1.2 Wave-Particle Duality Principle 34
(a8iCci: 2.2 Energy Quantization and Probability Concepts 36
r|DIf28MIq 2.2.1 Physical Meaning of the Wave Function 36
SA&(%f1d 2.2.2 The One-Electron Atom 37
B["+7\c<~ 2.2.3 Periodic Table 40
R=D}([pi 2.3 Energy-Band Theory 41
CEaAtAM 2.3.1 Formation of Energy Bands 41
$p4e8j[EJ 2.3.2 The Energy Band and the Bond Model 45
qlYi:uygY 2.3.3 Charge Carriers——Electrons and Holes 47
P5oS 1iu* 2.3.4 Effective Mass 49
*AQ3RA 8 2.3.5 Metals, Insulators, and Semiconductors 50
?kQY ^pU 2.3.6 The k-Space Diagram 52
V|kN 1
A 2,4 Density of States Function 55
zIu/!aw 2.5 Statistical Mechanics 57
6QbDU[ 2.5.1 Statistical Laws 57
@KU;'th 2.5.2 The Fermi-Dirac Distribution Function
>yXhP6 and the Fermi Energy 58
zhd1)lgY 2.5.3 Maxwell-Boltzmann Approximation 62
CJ%'VijhD 2.6 Summary 64
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Problems 65
N>"L2E=z$| CHAPTER 3
u/6if9B The Semiconductor in Equilibrium 70
QOYMT( j 3.0 Preview 70
O65`KOPn 3.1 Charge Carriers in Semiconductors 71
+h+ 7Q'k 3.1.1 Equilibrium Distribution of Electrons and Holes 72
?O#,{ZZf= 3.1.2 The no and Po Equations 74
N\B&|;-V 3.1.3 The Intrinsic Carrier Concentration 79
[J}eNprg 3.1.4 The Intrinsic Fermi-Level Position 82
$w{d4" ) 3.2 Dopant Atoms and Energy Levels 83
h8 N|m0W 3.2.1 Qualitative Description 83
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2m*Q 3.2.2 Ionization Energy 86
P-gj SE|yh 3.2.3 Group III-V Semiconductors 88
G$V=\60a- 3.3 Carrier Distributions in the Extrinsic Semiconductor 89
tlUh8os 3.3.1 Equilibrium Distribution of Electrons and Holes 89
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