《
半导体器件导论》(影印版)还尽量保持了原书的主要优点:(1)注重基本概念和方法。《半导体器件导论》(影印版)从内容的整体编排到具体章节的叙述,都体现了突出
物理概念、强调基本分析方法的指导思想。书中的数学推导和物理分析融为一体,得出的结论不仅对理解物理概念十分重要,而且经得起反复推敲。书中还采用了大量非常清晰的插图,帮助读者更好地理解基本概念。(2)可读性强,便于自学。全书脉络清楚,说理透彻,易于读者理解和掌握。每一章的开头都有引言,告诉读者可以从本章学到什么,应该掌握什么;每一章中都有例题和读者自测题;每一章的最后还有总结、复习提纲和大量
习题(其中包含一些采用计算机进行模拟计算的练习题)。通过举例和练习加深读者对基本概念的理解是《半导体器件导论》(影印版)突出的特点。
!.mMO_4} 《半导体器件导论》(影印版)是美国新墨西哥大学电机与计算机工程系Neamen教授所著的“SereicorlductorPhysics and Devices,3rd edition”一书的改进版本。
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'AG 与原书相比,《半导体器件导论》(影印版)更好地将固体晶格结构、量子力学入门知识、固体的量子理论以及半导体物理和半导体器件有机地结合在一起。利用《半导体器件导论》(影印版),学生只需要具有高等数学和大学普通物理的基础,用一个学期就可以系统地学习到半导体器件的基本理论,从而为进入微
电子学研究领域打下一个良好的基础。这一特点也是目前国内出版的同类教材很难达到的。
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zr%lBHuW w1EYXe Preface xvii
MCU{@\?Xf CHAPTER 1
Lz2 AWqR The Crystal Structure of Solids
9VdVom|e 1.0 Preview 1
l@nkR&4[ 1.1 Semiconductor Materials 2
"|V{@)!t 1.2 Types of Solids 3
g4_DEBh 1.3 Space Lattices 4
vr2tIKvpn 1.3.1 Primitive and Unit Cell 4
%>}6>nT# 1.3.2 Basic Crystal Structures 6
oqHI`Tu 1.3.3 Crystal Planes and Miller Indices
hN$6Kx>{ 1.3.4 The Diamond Structure 13
g![]R-$ 1.4 Atomic Bonding 15
#>dfP"}&, 1.5 Imperfections and Impurities in Solids 17
7yxZe4~|# 1.5.1 Imperfections in Solids 17
kPF[E5 1.5.2 Impurities in Solids 18
:)X?ML? 1.6 Growth of Semiconductor Materials 19
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1.6.1 Growth from a Melt 20
:Eq=wbAw 1.6.2 Epitaxial Growth 22
w<-8cvNhiz 1.7 Device Fabrication Techniques:
1iEZ9J? Oxidation 23
nJ |O,*`O 1.8 Summary 25
bvzeUn Problems 27
$w`QQ^\ CHAPTER 2
S',i Theory of Solids 31
S/v+7oT 2.0 Preview 31
7$x~}*u 2.1 Principles of Quantum Mechanics 32
q}*"0r 2.1.1 Energy Quanta 32
O79;tA<k 2.1.2 Wave-Particle Duality Principle 34
1[o] u:m9U 2.2 Energy Quantization and Probability Concepts 36
B)J.(k`p 2.2.1 Physical Meaning of the Wave Function 36
My0h9'K 2.2.2 The One-Electron Atom 37
SC)4u l% 2.2.3 Periodic Table 40
P|YBCH 2.3 Energy-Band Theory 41
<n< @
O5 2.3.1 Formation of Energy Bands 41
~,KAJ7O_ 2.3.2 The Energy Band and the Bond Model 45
YG$2ySkDhE 2.3.3 Charge Carriers——Electrons and Holes 47
_;",7bT80 2.3.4 Effective Mass 49
Rq~\Yf+Pm 2.3.5 Metals, Insulators, and Semiconductors 50
}C.M4{a\ 2.3.6 The k-Space Diagram 52
|2(z<b&y= 2,4 Density of States Function 55
"I?sz)pxG 2.5 Statistical Mechanics 57
WH2?_U-8h 2.5.1 Statistical Laws 57
!/, 6+2Ru 2.5.2 The Fermi-Dirac Distribution Function
(-Rh%ZHH and the Fermi Energy 58
rMAH YH9 2.5.3 Maxwell-Boltzmann Approximation 62
L{(\k$>' 2.6 Summary 64
) \Mwv&k1 Problems 65
pe=Ou0 CHAPTER 3
YJ_`[LnL The Semiconductor in Equilibrium 70
Hi #'h 3.0 Preview 70
peqoLeJI 3.1 Charge Carriers in Semiconductors 71
aZ^P*|_K3 3.1.1 Equilibrium Distribution of Electrons and Holes 72
!U.Xb6 3.1.2 The no and Po Equations 74
fI(u-z~, 3.1.3 The Intrinsic Carrier Concentration 79
z)"7qqA 3.1.4 The Intrinsic Fermi-Level Position 82
9k =-8@G9 3.2 Dopant Atoms and Energy Levels 83
'0x`Oh&PK 3.2.1 Qualitative Description 83
&\8.y2=9p 3.2.2 Ionization Energy 86
l4u@0;6P 3.2.3 Group III-V Semiconductors 88
&RP!9{F< 3.3 Carrier Distributions in the Extrinsic Semiconductor 89
Q>f^*FyOw< 3.3.1 Equilibrium Distribution of Electrons and Holes 89
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