《
半导体器件导论》(影印版)还尽量保持了原书的主要优点:(1)注重基本概念和方法。《半导体器件导论》(影印版)从内容的整体编排到具体章节的叙述,都体现了突出
物理概念、强调基本分析方法的指导思想。书中的数学推导和物理分析融为一体,得出的结论不仅对理解物理概念十分重要,而且经得起反复推敲。书中还采用了大量非常清晰的插图,帮助读者更好地理解基本概念。(2)可读性强,便于自学。全书脉络清楚,说理透彻,易于读者理解和掌握。每一章的开头都有引言,告诉读者可以从本章学到什么,应该掌握什么;每一章中都有例题和读者自测题;每一章的最后还有总结、复习提纲和大量
习题(其中包含一些采用计算机进行模拟计算的练习题)。通过举例和练习加深读者对基本概念的理解是《半导体器件导论》(影印版)突出的特点。
%Q=rm!Syv 《半导体器件导论》(影印版)是美国新墨西哥大学电机与计算机工程系Neamen教授所著的“SereicorlductorPhysics and Devices,3rd edition”一书的改进版本。
SB:z[kfz| 与原书相比,《半导体器件导论》(影印版)更好地将固体晶格结构、量子力学入门知识、固体的量子理论以及半导体物理和半导体器件有机地结合在一起。利用《半导体器件导论》(影印版),学生只需要具有高等数学和大学普通物理的基础,用一个学期就可以系统地学习到半导体器件的基本理论,从而为进入微
电子学研究领域打下一个良好的基础。这一特点也是目前国内出版的同类教材很难达到的。
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s~A:*2 \ x=N0H Preface xvii
+.v+Opp, CHAPTER 1
L+lX$k The Crystal Structure of Solids
w6ck wn, 1.0 Preview 1
A~;.9{6J[t 1.1 Semiconductor Materials 2
?z3|^oU~d 1.2 Types of Solids 3
W]D+[mpgK 1.3 Space Lattices 4
[KMS/'; ] 1.3.1 Primitive and Unit Cell 4
Hn]6re 1.3.2 Basic Crystal Structures 6
z3M6<.K 1.3.3 Crystal Planes and Miller Indices
,nWZJ&B 1.3.4 The Diamond Structure 13
^vZu[m 1.4 Atomic Bonding 15
E?jb? 1.5 Imperfections and Impurities in Solids 17
Gw#z:gX2 1.5.1 Imperfections in Solids 17
S-79uo 1.5.2 Impurities in Solids 18
Pa{bkr 1.6 Growth of Semiconductor Materials 19
FX+^S?x. 1.6.1 Growth from a Melt 20
0xV[C4E[6 1.6.2 Epitaxial Growth 22
4rypT-%^ ; 1.7 Device Fabrication Techniques:
<U}25AR Oxidation 23
:eBp`dmn 1.8 Summary 25
LbnF8tj}h Problems 27
~g *`E!2 CHAPTER 2
JY9hD;`6y Theory of Solids 31
,U fB{BW 2.0 Preview 31
R+Rb[,m 2.1 Principles of Quantum Mechanics 32
zc1~ q 2.1.1 Energy Quanta 32
ze`qf% 2.1.2 Wave-Particle Duality Principle 34
ah!fQLMH 2.2 Energy Quantization and Probability Concepts 36
;n b>IL 2.2.1 Physical Meaning of the Wave Function 36
OQ _wsAA 2.2.2 The One-Electron Atom 37
*jl_,0g] 2.2.3 Periodic Table 40
R/&C}6Gn 2.3 Energy-Band Theory 41
:Ek3]`q# 2.3.1 Formation of Energy Bands 41
;_1> nXh 2.3.2 The Energy Band and the Bond Model 45
mZ.E;X& ,* 2.3.3 Charge Carriers——Electrons and Holes 47
nVk]Qe 2.3.4 Effective Mass 49
,]=Qgn 2.3.5 Metals, Insulators, and Semiconductors 50
TzrU |D? 2.3.6 The k-Space Diagram 52
X6oY-4O 2,4 Density of States Function 55
*4 Kc "M 2.5 Statistical Mechanics 57
9z(h8H 2.5.1 Statistical Laws 57
e0<L^|S 2.5.2 The Fermi-Dirac Distribution Function
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bJ01 and the Fermi Energy 58
u_S>`I 2.5.3 Maxwell-Boltzmann Approximation 62
hF-X8$[ 2.6 Summary 64
q?oJ=]m" Problems 65
nHB`<B CHAPTER 3
4\Cb4jq%/ The Semiconductor in Equilibrium 70
G/8G`teAZ 3.0 Preview 70
:w4I+*] 3.1 Charge Carriers in Semiconductors 71
JmVha!<qk 3.1.1 Equilibrium Distribution of Electrons and Holes 72
|Vc:o_n7 3.1.2 The no and Po Equations 74
CYC6:g|) 3.1.3 The Intrinsic Carrier Concentration 79
WR>2t&;E 3.1.4 The Intrinsic Fermi-Level Position 82
Gp))1b'; 3.2 Dopant Atoms and Energy Levels 83
l7GLN1#m 3.2.1 Qualitative Description 83
mQt?d?6 3.2.2 Ionization Energy 86
A\<WnG>xjP 3.2.3 Group III-V Semiconductors 88
3WF6bJN 3.3 Carrier Distributions in the Extrinsic Semiconductor 89
:6Sb3w5h 3.3.1 Equilibrium Distribution of Electrons and Holes 89
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