《
半导体器件导论》(影印版)还尽量保持了原书的主要优点:(1)注重基本概念和方法。《半导体器件导论》(影印版)从内容的整体编排到具体章节的叙述,都体现了突出
物理概念、强调基本分析方法的指导思想。书中的数学推导和物理分析融为一体,得出的结论不仅对理解物理概念十分重要,而且经得起反复推敲。书中还采用了大量非常清晰的插图,帮助读者更好地理解基本概念。(2)可读性强,便于自学。全书脉络清楚,说理透彻,易于读者理解和掌握。每一章的开头都有引言,告诉读者可以从本章学到什么,应该掌握什么;每一章中都有例题和读者自测题;每一章的最后还有总结、复习提纲和大量
习题(其中包含一些采用计算机进行模拟计算的练习题)。通过举例和练习加深读者对基本概念的理解是《半导体器件导论》(影印版)突出的特点。
96 q_K84K 《半导体器件导论》(影印版)是美国新墨西哥大学电机与计算机工程系Neamen教授所著的“SereicorlductorPhysics and Devices,3rd edition”一书的改进版本。
D7lK30 与原书相比,《半导体器件导论》(影印版)更好地将固体晶格结构、量子力学入门知识、固体的量子理论以及半导体物理和半导体器件有机地结合在一起。利用《半导体器件导论》(影印版),学生只需要具有高等数学和大学普通物理的基础,用一个学期就可以系统地学习到半导体器件的基本理论,从而为进入微
电子学研究领域打下一个良好的基础。这一特点也是目前国内出版的同类教材很难达到的。
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*5vV6][ [Sr,h0h6 Preface xvii
{["\.ZS| CHAPTER 1
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D-3'l& The Crystal Structure of Solids
so"$m 1.0 Preview 1
IE;~?W" 1.1 Semiconductor Materials 2
YP.5fq: 1.2 Types of Solids 3
[`{Z}q& 1.3 Space Lattices 4
wfU7G[ 1.3.1 Primitive and Unit Cell 4
5mJ JU 1.3.2 Basic Crystal Structures 6
),U X4%K= 1.3.3 Crystal Planes and Miller Indices
PZE0}>z 1.3.4 The Diamond Structure 13
l)Pu2!Ic 1.4 Atomic Bonding 15
u.mJQDTH 1.5 Imperfections and Impurities in Solids 17
DF1I[b=] 1.5.1 Imperfections in Solids 17
bSfpbo4( 1.5.2 Impurities in Solids 18
`tHvD=`m. 1.6 Growth of Semiconductor Materials 19
_A+s)]} 1.6.1 Growth from a Melt 20
uJFdbBDSh 1.6.2 Epitaxial Growth 22
=U #dJ^4P 1.7 Device Fabrication Techniques:
X9p.gXF Oxidation 23
D2](da:]8) 1.8 Summary 25
f|h|q_<; Problems 27
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+(lZ CHAPTER 2
p[hZ@f(z Theory of Solids 31
kSR\RuY* 2.0 Preview 31
LV\DBDM 2.1 Principles of Quantum Mechanics 32
d]:I(9K 2.1.1 Energy Quanta 32
gCioq. 2.1.2 Wave-Particle Duality Principle 34
o*DN4oa) 2.2 Energy Quantization and Probability Concepts 36
Y%PwktQm 2.2.1 Physical Meaning of the Wave Function 36
zA$k0p 2.2.2 The One-Electron Atom 37
:bz}c48% 2.2.3 Periodic Table 40
e?7&M 2.3 Energy-Band Theory 41
P%{^ i] 2.3.1 Formation of Energy Bands 41
>#hO).`C 2.3.2 The Energy Band and the Bond Model 45
}._eIx" 2.3.3 Charge Carriers——Electrons and Holes 47
Pa{%\dsv 2.3.4 Effective Mass 49
RRRCS]y7$t 2.3.5 Metals, Insulators, and Semiconductors 50
jUSmqm' 2.3.6 The k-Space Diagram 52
S/D^ 2,4 Density of States Function 55
FrTi+& < 2.5 Statistical Mechanics 57
{DU`[:SQZg 2.5.1 Statistical Laws 57
2.% .Z_k) 2.5.2 The Fermi-Dirac Distribution Function
V'kX)$ and the Fermi Energy 58
[x9KVd ^d 2.5.3 Maxwell-Boltzmann Approximation 62
ny`#%Vs 2.6 Summary 64
o$w_Es]Ma Problems 65
H*[M\gN$ CHAPTER 3
R{ a"Y$ The Semiconductor in Equilibrium 70
2Ou[u#H 3.0 Preview 70
_9=Yvc= 3.1 Charge Carriers in Semiconductors 71
Ezr:1 GJ 3.1.1 Equilibrium Distribution of Electrons and Holes 72
H-~6Z",1 3.1.2 The no and Po Equations 74
^:#D0[ 3.1.3 The Intrinsic Carrier Concentration 79
Zrvz;p@~ 3.1.4 The Intrinsic Fermi-Level Position 82
e6d<dXx 3.2 Dopant Atoms and Energy Levels 83
J@4 Bf
3.2.1 Qualitative Description 83
~ vJ,`? 3.2.2 Ionization Energy 86
B?4boF?~ 3.2.3 Group III-V Semiconductors 88
bsB*533 3.3 Carrier Distributions in the Extrinsic Semiconductor 89
,wIONDnLZ 3.3.1 Equilibrium Distribution of Electrons and Holes 89
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