《
半导体器件导论》(影印版)还尽量保持了原书的主要优点:(1)注重基本概念和方法。《半导体器件导论》(影印版)从内容的整体编排到具体章节的叙述,都体现了突出
物理概念、强调基本分析方法的指导思想。书中的数学推导和物理分析融为一体,得出的结论不仅对理解物理概念十分重要,而且经得起反复推敲。书中还采用了大量非常清晰的插图,帮助读者更好地理解基本概念。(2)可读性强,便于自学。全书脉络清楚,说理透彻,易于读者理解和掌握。每一章的开头都有引言,告诉读者可以从本章学到什么,应该掌握什么;每一章中都有例题和读者自测题;每一章的最后还有总结、复习提纲和大量
习题(其中包含一些采用计算机进行模拟计算的练习题)。通过举例和练习加深读者对基本概念的理解是《半导体器件导论》(影印版)突出的特点。
q-Qws0\v. 《半导体器件导论》(影印版)是美国新墨西哥大学电机与计算机工程系Neamen教授所著的“SereicorlductorPhysics and Devices,3rd edition”一书的改进版本。
CQ`(,F3( 与原书相比,《半导体器件导论》(影印版)更好地将固体晶格结构、量子力学入门知识、固体的量子理论以及半导体物理和半导体器件有机地结合在一起。利用《半导体器件导论》(影印版),学生只需要具有高等数学和大学普通物理的基础,用一个学期就可以系统地学习到半导体器件的基本理论,从而为进入微
电子学研究领域打下一个良好的基础。这一特点也是目前国内出版的同类教材很难达到的。
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(+_J0i t RFC;1+Jn Preface xvii
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:(m: CHAPTER 1
t>fB@xHBB The Crystal Structure of Solids
_#O?g=1 1.0 Preview 1
54{"ni2a 1.1 Semiconductor Materials 2
twtDyo(\ 1.2 Types of Solids 3
{5udol5? 1.3 Space Lattices 4
~c^-DAgB 1.3.1 Primitive and Unit Cell 4
agYKaM1N 1.3.2 Basic Crystal Structures 6
z!+<m< 1.3.3 Crystal Planes and Miller Indices
!D3}5A1, 1.3.4 The Diamond Structure 13
"!tB";n 1.4 Atomic Bonding 15
b{rmxtx 1.5 Imperfections and Impurities in Solids 17
taQ[>x7b 1.5.1 Imperfections in Solids 17
ge[i&,.&z 1.5.2 Impurities in Solids 18
%&XX*&
q 1.6 Growth of Semiconductor Materials 19
zEW:Xe) 1.6.1 Growth from a Melt 20
M\&~ Dmd 1.6.2 Epitaxial Growth 22
)rj mJ 1.7 Device Fabrication Techniques:
CnH
R&` Oxidation 23
>I?Mi{'a 1.8 Summary 25
+joE Problems 27
[q&J"dt CHAPTER 2
.y/b$|d, Theory of Solids 31
dx}/#jMa 2.0 Preview 31
qt(:bEr^6b 2.1 Principles of Quantum Mechanics 32
\bOjb\ w$ 2.1.1 Energy Quanta 32
AG7}$O. 2.1.2 Wave-Particle Duality Principle 34
?C:fP`j: 2.2 Energy Quantization and Probability Concepts 36
F4x7;?W{* 2.2.1 Physical Meaning of the Wave Function 36
hYn'uL^~[ 2.2.2 The One-Electron Atom 37
x]oQl^F 2.2.3 Periodic Table 40
/aG>we 2.3 Energy-Band Theory 41
,NEs{!
T 2.3.1 Formation of Energy Bands 41
!5j3gr~ 2.3.2 The Energy Band and the Bond Model 45
GZEonCk[& 2.3.3 Charge Carriers——Electrons and Holes 47
h'~-K` 2.3.4 Effective Mass 49
yV/ J( 2.3.5 Metals, Insulators, and Semiconductors 50
}i&dZTBGW 2.3.6 The k-Space Diagram 52
)VMBo6:+ 2,4 Density of States Function 55
I_G>W3 2.5 Statistical Mechanics 57
NE3wui1 V 2.5.1 Statistical Laws 57
prN(V1O 2.5.2 The Fermi-Dirac Distribution Function
C|\^uR0 and the Fermi Energy 58
1H=wl=K 2.5.3 Maxwell-Boltzmann Approximation 62
Wk?|BR]O 2.6 Summary 64
e:LZ s0 Problems 65
IWqxT?* CHAPTER 3
0:'jU The Semiconductor in Equilibrium 70
?d<:V.1U@ 3.0 Preview 70
k6'# 3.1 Charge Carriers in Semiconductors 71
wLSZL 3.1.1 Equilibrium Distribution of Electrons and Holes 72
d7J[.^\ 3.1.2 The no and Po Equations 74
m->%8{L 3.1.3 The Intrinsic Carrier Concentration 79
-]\E}Ti 3.1.4 The Intrinsic Fermi-Level Position 82
S}^s5ztm 3.2 Dopant Atoms and Energy Levels 83
=t$mbI 3.2.1 Qualitative Description 83
4 Qel; 3.2.2 Ionization Energy 86
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$Cu 3.2.3 Group III-V Semiconductors 88
Y-q@~vZ] 3.3 Carrier Distributions in the Extrinsic Semiconductor 89
BhW]Oq& 3.3.1 Equilibrium Distribution of Electrons and Holes 89
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