新势力光电供应压力传感器芯片

新势力光电供应压力传感器芯片，采用高级电阻传感技术（STARe, Sensor Technology for AdvancedResistors），特点：稳定性高、适用于恶劣环境，该系列压力传感器芯片应用：腐蚀性、流动性、油性环境下的高精密压力传感测量，包括：汽车制造、工业、医疗、大型家电。 ![@\p5-e  
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vn=0 =(   Type	_;5N@2?   Pressure	r)t-_p37   Min	8U&93$   Typ	|/p2DU2   Max	_S#3!Wx   Unit
EY 9N{   The Pressure sensor chips are based onthe STARe (Sensor Technology for Advanced Resistors)
IDv|i.q3   Standard Line STARe, Piezoresistive chipsfor pressure measurements of 1 to 30 bar
fxk6q$'   SL21K-100k-A/GXX	, !g%` @u   100 kPa	cY\"{o"C   40	yE),GJ-m\<   70	nHi6$} I   130	3P2L phW   mV@5V
HvVS<Ke   SL21K-250k-A/GXX	'uA$$~1   250 kPa	n*fsdo~   60	Gj([S17\0:   100	;;l-E>X0   140
E#cZM>   SL21K-500k-A/GXX	dy*CDRU4   500 kPa	|#!P!p}   60	eMC0 )B   100	#>\+6W17U   140
0?nm`9v6   SL21K-01M0-A/GXX	-( ,iwFb   1.0 MPa	]):kMRv   60	G_a//[p   100	-%x9^oQwY   140
^aG=vXK`b   SL21K-03M0-A/GXX	:.M"M$MRp8   3.0 MPa	bfjtNF *^   60	i.`RQZ$,/   100	,d3 4v*U   140
FO5'<G-   Industrial Line STARe, Piezoresistivechips for pressure measurements of 100 mbar to 400 bar
LAwAFma>   IL20L-10k0-GXX	oUwu:&<Orm   10 kPa	7&z`N^dz{   30	x GHS   60	77ID 82   120	7o]p0iLej   mV@5V
c}>p"   IL20L-35k0-A/GXX	_=eeZ4f   35 kPa	F$Q@UVA   40	\WeGO.i-   100	l1qWl   160
B3^4,'   IL20M-03M0-A/GXX	Ag`:!*   3.0 MPa	j.@TPf*   60	%r*zd0*<n1   100	L>mv\D;o.   140
]+B#SIC;   IL20M-100k-A/GXX	:!f1|h   100 kPa	"3i=kvdz   60	5b9>a5j1;   100	&<P!o_+eb   140
xv{iWJcs   IL20M-250k-A/GXX	W%=b|6E   250 kPa	u&>o1!c*P   60	i}5 #n   100	|h,aV(Q   140
E30VKh |   IL20M-500k-A/GXX	{]}}rx'|P   500 kPa	!.'@3-w]   60	r$*p   100	.hCOi<wB   140
b:S#Sz$   IL20M-01M0-A/GXX	EK^ld!g(   1.0 MPa	gn? ~y`   60	~pqp`   100	*}\!&Zk"   140
ba3_55]   IL20M-10M0-A/GXX	l#,WM u&   10.0 MPa	Y24:D7Q   200	MOFIR wVZ+   250	,OLN%2Sq   300
P v`^#BX'   IL20M-40M0-AXX	`bGAc&,&   40.0 MPa	A}b<Lg   230	V$wf;v0d(   290	}Jgz#d   350
ipEsR/O   High Stability Line STARe, Piezoresistivechips for pressure measurements of 60 mbar to 400 bar
]OoqU-q   HS20V-06k0-A/G/D05	1e;^MzB"   6 kPa	hIw<gb4J%   60	7:1c5F~M   100	h{]l?6`   140	AO9F.A<T5   mV@5V
C,w$)x5kls   HS20V-10k0-A/G/D05	33\{S$p   10 kPa	,2)LH'Xx   60	}Y5Sf"~M   100	<3QE3;4   140
()vxTTa   HS20L-35k0-A/G/DXX	P'Jw:)k(   35 kPa	"6n~,$   60	aF$HF;-y   100	Z^AACKME   140
Q^8C*ekfg!   HS20L-100k-A/G/DXX	5isejR{r   100 kPa	,|b<as@X   60	"qb3\0O   100	,k/*f+t   140
a Kb2:1EQ   HS20M-250k-A/G/DXX	@R?S-*o   250 kPa	S"w$#"EJA   60	Hq^sU%   100	v[ru }/4   140
iwL\Ha   HS20M-500k-A/G/DXX	z 48,{H6h   500 kPa	Xi5ZQo!t   60	. #;ZM[v   100	0?ZJJdI3   140
HW{osav9   HS20M-01M0-A/G/DXX	jR\T\r4   1.0 MPa	9S.Uo[YY   60	JcZs\ fl9   100	j%b/1@I   140
@q2Yka   HS20M-03M0-A/G/XX	q?&vV`PG5   3.0 MPa	W z3y+I/&   60	iD_NpH q   100	]xA;*b;|h   140
eQno]$-\   HS20M-10M0-A/GXX	kVQKP  U   10.0 MPa	;]MHU/   200	]E88zWDY`   250	[z`U9J   300
o8RagSIo8   HS20M-20M0-A08	<r,l   20.0 MPa	6.2_UN^<   60	ld4QhZia   100	&?/h#oF@\   140
'6fMF#X4F   HS20M-40M0-A08	"a;JQ:   40.0 MPa	VLN=9   60	IC/'<%k   100	4)-LlYS_d<   140
Yr jF1hJ   Harsh Environmental Line, Piezoresistivechips for pressure measurements of 2 bar to 16 bar
y:D|U!o2V   HE11C-200K-AXX	R|ViLty   200 kPa	Ezm ~SY   60	:p(3Ap2TY   100	m ,)4k&d   140	.3A66 O~zT   mV@5V
Ej ip%m   HE11C-400K-AXX	0eQyzn*98   400 kPa	"N"9PTX   60	GrW+P[j9   100	1Qtojph   140
U"A ]b(54   HE11C-800K-AXX	r~z-l,   800 kPa	( +38z)f   60	y|nMCkuX   100	Xp {+){Iu   140
<jQ?l%\   HE11C-01M6-AXX	;-lk#D?n9   1.6 MPa	ATv.3cy   60	ngcXS2S_   100	 RN'|./N   140

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