新势力光电供应压力传感器芯片

新势力光电供应压力传感器芯片，采用高级电阻传感技术（STARe, Sensor Technology for AdvancedResistors），特点：稳定性高、适用于恶劣环境，该系列压力传感器芯片应用：腐蚀性、流动性、油性环境下的高精密压力传感测量，包括：汽车制造、工业、医疗、大型家电。 X<[ qX*  
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a6e{bAuq   Type	]6)u$4X6$   Pressure	GjHR.p?-   Min	gC/ e]7FNr   Typ	 G7al@   Max	tZKw(<am   Unit
~qGW94   The Pressure sensor chips are based onthe STARe (Sensor Technology for Advanced Resistors)
eJHh}   Standard Line STARe, Piezoresistive chipsfor pressure measurements of 1 to 30 bar
Q zaD\^OF   SL21K-100k-A/GXX	^9q#,6   100 kPa	:\His{%   40	sAL ]N][Y   70	W_Y8)KxG:L   130	BrwC9:   mV@5V
x}?<9(nE c   SL21K-250k-A/GXX	d>8"-$   250 kPa	U"p</ Q   60	\?^2}K/   100	LtMM89u   140
)&7.E   SL21K-500k-A/GXX	!!^z6jpvn   500 kPa	=ZIT!B?4   60	AT~,   100	&o;0%QgF   140
j"69uj` R   SL21K-01M0-A/GXX	\BXzmok   1.0 MPa	CG=c@-"n/   60	FHSoj=   100	~dRstH7u   140
L#UR>Z#9   SL21K-03M0-A/GXX	,=m.WmXE   3.0 MPa	3Hom0g,V4   60	'|^:,@8P9   100	1I9v`eT4   140
cu0IFNF}[   Industrial Line STARe, Piezoresistivechips for pressure measurements of 100 mbar to 400 bar
Z,38eQpM   IL20L-10k0-GXX	2Kz+COP+   10 kPa	[ fa4   30	Vi8A4   60	YNU}R/u6^   120	"S%t\   mV@5V
FI$:R   IL20L-35k0-A/GXX	;Y`Y1   35 kPa	tUJRNEg   40	}#O!GG{   100	Y$r78h=4   160
Z nc(Q   IL20M-03M0-A/GXX	{q?&h'#y   3.0 MPa	^hC'\09=c   60	1q;v|F   100	G:= hg6'   140
?0VR2Yb${b   IL20M-100k-A/GXX	LmF,en5   100 kPa	#dA$k+3   60	vjGQ!xF   100	)#}>,,S   140
%X{EupiFA   IL20M-250k-A/GXX	' [ 4;QYw   250 kPa	DYD<?._I   60	V0\[|E;F   100	FM@iIlY"   140
Ic#xz;elM   IL20M-500k-A/GXX	*glZb;_   500 kPa	18>cfDh;N   60	;Ba%aaHl   100	9Yx(u2PQ   140
7^q~a(j   IL20M-01M0-A/GXX	L_8zZ8 o   1.0 MPa	_IDZ.\'>$   60	??rS h Mu   100	xAQtX=FoX+   140
,BU;i%G&s   IL20M-10M0-A/GXX	,S8K!   10.0 MPa	SAx9cjj+   200	WlMcEje   250	*gbK :*_J   300
p T(M>LP83   IL20M-40M0-AXX	}{o!   40.0 MPa	[. 5m}V   230	/d8o*m'bu!   290	uepyH   350
ff"wg\O4   High Stability Line STARe, Piezoresistivechips for pressure measurements of 60 mbar to 400 bar
n+~Dc[   HS20V-06k0-A/G/D05	g`7XE   6 kPa	BX,)G HE   60	yB*,)x0 @   100	-4a9BE".   140	BM%w Z: s   mV@5V
WNjwv/   HS20V-10k0-A/G/D05	j2Zp#E!   10 kPa	H",B[ YK   60	n_8[bkbi   100	)ZJvx%@i   140
/:&!o2&1H   HS20L-35k0-A/G/DXX	C6_(j48&   35 kPa	vJkc/7   60	7|P kc(O   100	Y::0v@&(   140
Ykbg5Z   HS20L-100k-A/G/DXX	aER|5!7(2\   100 kPa	4`IM[DIG~   60	t8Zo9q>   100	Hd|l6/[xz   140
L[` l80   HS20M-250k-A/G/DXX	Wgq|Q*   250 kPa	}{aGh I~<   60	I$n=>s   100	S:\i M:   140
nR!e(   HS20M-500k-A/G/DXX	Kz4S6N c   500 kPa	:QCL9QZ'   60	yC,/R371k   100	`+JFvn!   140
L"L3n,%F   HS20M-01M0-A/G/DXX	N0U/u'J!g   1.0 MPa	l^B. iB   60	*dzZOe>,   100	+jN}d=N-   140
|m19fg3u   HS20M-03M0-A/G/XX	=lXj%V^8N   3.0 MPa	fn#8=TIDf   60	e_vsiT   100	0P^h6Vat   140
8#I>`z^F   HS20M-10M0-A/GXX	cpY{o^   10.0 MPa	_`$LdqgE   200	J( }2Ua_   250	'[F:uA   300
>%JPgr/ 8   HS20M-20M0-A08	Ycm)PU["   20.0 MPa	]n ?x tI   60	#u<Qc T@   100	)oEVafNsT   140
z(PUoV:?   HS20M-40M0-A08	r@r%qkh(.@   40.0 MPa	h\m35'v!   60	v1h(_NLI!   100	yu?5t?vf   140
B( [x8A]   Harsh Environmental Line, Piezoresistivechips for pressure measurements of 2 bar to 16 bar
Urj*V0^   HE11C-200K-AXX	x^eu[olN   200 kPa	oL4W>b )   60	]!UYl   100	~/:vr   140	:-&|QVH   mV@5V
wZrFu(_   HE11C-400K-AXX	wak26W>I3   400 kPa	f*ZU a   60	Pms@!yce   100	c,UJ uCZ   140
Hg+<GML   HE11C-800K-AXX	T&U}}iWN   800 kPa	Wj{lb_Rj   60	pA7-B>Y   100	6|97;@94   140
-K"'F`;W   HE11C-01M6-AXX	^5 >e   1.6 MPa	5 <?Ah+1   60	r)(5,*v   100	3WV(Ok   140

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