新势力光电供应压力传感器芯片

新势力光电供应压力传感器芯片，采用高级电阻传感技术（STARe, Sensor Technology for AdvancedResistors），特点：稳定性高、适用于恶劣环境，该系列压力传感器芯片应用：腐蚀性、流动性、油性环境下的高精密压力传感测量，包括：汽车制造、工业、医疗、大型家电。 <FFaaGiE>  
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:Y;\1J<b1   Type	Nt#a_   Pressure	nzK"eNDN.   Min	$1$T2'C~+   Typ	\9t6#8   Max	86,$ I+   Unit
!%{s[eO\   The Pressure sensor chips are based onthe STARe (Sensor Technology for Advanced Resistors)
3V`.<   Standard Line STARe, Piezoresistive chipsfor pressure measurements of 1 to 30 bar
hu+% X.F4   SL21K-100k-A/GXX	d~b#dcv$"   100 kPa	N>}2&'I   40	Yi+~}YP.E(   70	j,/t<@S>   130	8fwM)DKS   mV@5V
3qc o2{nz   SL21K-250k-A/GXX	.wfN.Z   250 kPa	a:3f>0_t   60	@j Y_^8#S   100	^BFD -p   140
b|HH9\   SL21K-500k-A/GXX	#)xg$9LQb   500 kPa	X519} l3   60	sR1 &2hB   100	eL+L {Ac   140
KVrK:W--p   SL21K-01M0-A/GXX	yNb :zoT   1.0 MPa	~t~5ctJ@   60	PNbs7f   100	!7K-Kqn   140
~?c}=XL-   SL21K-03M0-A/GXX	c.\J_^   3.0 MPa	KQ x<{-G6   60	%J pb&CEY   100	D@ji1$K   140
,T|%vqbmw   Industrial Line STARe, Piezoresistivechips for pressure measurements of 100 mbar to 400 bar
]3E':JM@   IL20L-10k0-GXX	y=jTS   10 kPa	]cv|A^   30	*0^t;A+   60	'\2lWR]ndd   120	2.K"+%   mV@5V
D=fB&7%@   IL20L-35k0-A/GXX	'd"\h#   35 kPa	(pjmE7`"P   40	63$ R')   100	M]>JI'8   160
Lu~e^Ul    IL20M-03M0-A/GXX	Yb|zE    3.0 MPa	|7CH   60	^w<:UE2a!   100	e< Ee2pGX   140
Te{L@sj   IL20M-100k-A/GXX	bz~-uHC   100 kPa	+M\*C#   60	i#jCf3%+ h   100	]'aGoR   140
b'N"?W^YQ   IL20M-250k-A/GXX	pg~`NN   250 kPa	N[}XLhbt   60	#oYX0wvl   100	VmTk4?V4   140
 \~   IL20M-500k-A/GXX	'FBvAk6   500 kPa	X/1Z9a+W   60	s8``U~D   100	!qH=l-7A   140
rr4yJ;qpeP   IL20M-01M0-A/GXX	)_EobE\   1.0 MPa	$gZ|=(y&r   60	mId{f   100	ji(S ?^   140
-o#0Yt}3   IL20M-10M0-A/GXX	tazBZ'\c   10.0 MPa	nX Qz   200	nWZrB s _   250	d1j v>tu   300
=]E1T8|   IL20M-40M0-AXX	!*%3um   40.0 MPa	CSU>nIE0   230	vS<;:3   290	hJ:Hv.{`)W   350
(oJ#`k:&n   High Stability Line STARe, Piezoresistivechips for pressure measurements of 60 mbar to 400 bar
A|>a Gy   HS20V-06k0-A/G/D05	kXX RMR   6 kPa	% wRJ"T`Tt   60	Zt` ,DM   100	4 qW)R{%   140	F{T|lTl   mV@5V
dl{3fldb   HS20V-10k0-A/G/D05	g6W.Gl"5\w   10 kPa	sCb?TyN'n   60	_k+Bj.L   100	0t4i'??   140
n? s4"N6   HS20L-35k0-A/G/DXX	f\(Kou$   35 kPa	\iVYhl   60	kLD)<D   100	`ZefSmb   140
<1jiU%!w   HS20L-100k-A/G/DXX	9J ]LV'f7   100 kPa	h}`<pq   60	gieX`}   100	{{DW P-v4   140
hrAI@.Bo   HS20M-250k-A/G/DXX	eB]ZnJ2^=   250 kPa	1g/mzC    60	5d4-95['_   100	o!H"~5Trv!   140
jY?%LY@5I   HS20M-500k-A/G/DXX	o`sn/x   500 kPa	#-VKk   60	:!A@B.E   100	,zw   140
Ns9g>~   HS20M-01M0-A/G/DXX	"1#,d#Q$   1.0 MPa	)US)-\^   60	yWK[@;S]%   100	?4~lA L1   140
/V*eAn8>   HS20M-03M0-A/G/XX	z`_N|iEd   3.0 MPa	i/Hi   60	r-V./M@L   100	QWP_8$Q   140
>ab=LDoM   HS20M-10M0-A/GXX	(p2a{v}fEz   10.0 MPa	WMC6dD_6e   200	(HJ60Hj   250	-FPl",f=r   300
[j/-(?+   HS20M-20M0-A08	Z3/zUtgs   20.0 MPa	C eg6o&^   60	\4&g5vE   100	N,1wfOE   140
fAm2ls7c   HS20M-40M0-A08	[gE2lfaEy   40.0 MPa	Ar$LA"vu4   60	lwB! ti   100	"h#=ctCx"   140
':[y]ep(~|   Harsh Environmental Line, Piezoresistivechips for pressure measurements of 2 bar to 16 bar
oc?VAF   HE11C-200K-AXX	u/zfx;K   200 kPa	?:2Xh/8-   60	.KD0 7   100	aD:+,MZ   140	["7}u^z@<+   mV@5V
R3<+z   HE11C-400K-AXX	*5NffiA}-   400 kPa	&V;a:   60	f0uiNy(r$   100	(+@.L7>m+t   140
&d2/F i+   HE11C-800K-AXX	Psv!`K   800 kPa	KXGs'D   60	ppYz~ {"r   100	}0TY   140
bM'AD[   HE11C-01M6-AXX	%|I |Mc   1.6 MPa	Q9'p2@Z   60	~:@H6Ke[   100	izxCbbg   140

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