新势力光电供应压力传感器芯片

新势力光电供应压力传感器芯片，采用高级电阻传感技术（STARe, Sensor Technology for AdvancedResistors），特点：稳定性高、适用于恶劣环境，该系列压力传感器芯片应用：腐蚀性、流动性、油性环境下的高精密压力传感测量，包括：汽车制造、工业、医疗、大型家电。 /*~EO{o  
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J[&@PUy   Type	Xc++ b|k   Pressure	{'flJ5]   Min	y<UK:^t31V   Typ	S E<FL/x1#   Max	!"AvY y9   Unit
E#34Wh2z   The Pressure sensor chips are based onthe STARe (Sensor Technology for Advanced Resistors)
gE'sOT9v   Standard Line STARe, Piezoresistive chipsfor pressure measurements of 1 to 30 bar
fy1|$d{'   SL21K-100k-A/GXX	/A\8 mL8   100 kPa	Ha#=(9.   40	-12UN(&&Z   70	KRbvj   130	XTs8s12   mV@5V
J6"9v;V   SL21K-250k-A/GXX	t|?ez4/{z   250 kPa	*][`@@->   60	yZ7&b&2nLn   100	1dY}\Sp   140
9yu\ Ot   SL21K-500k-A/GXX	-:^U_FL8un   500 kPa	Sz $~P9   60	o)|flI'vT   100	W-f=]eWg   140
f^ZRT@`O   SL21K-01M0-A/GXX	,]C;sN%~}   1.0 MPa	"s-"<&>a(   60	t^-d/yKt0w   100	;<Sd~M4f   140
Ufj`euY   SL21K-03M0-A/GXX	1.JK33   3.0 MPa	;1W6G=m   60	'c&Ed   100	\&:nFb%=   140
g9p Z\$J&   Industrial Line STARe, Piezoresistivechips for pressure measurements of 100 mbar to 400 bar
.<?GS{6 N   IL20L-10k0-GXX	$p8xEcQdU#   10 kPa	s jTZF-   30	Rh2+=N<X   60	G5_=H,Vmd   120	[^n.Pns   mV@5V
@u+]aI!`-   IL20L-35k0-A/GXX	ldcqe$7,   35 kPa	YDsb3X<0'   40	]#<4vl\   100	PQt")[   160
f5"k55}   IL20M-03M0-A/GXX	?,Xw[pR   3.0 MPa	KkyVSoD\   60	+ J{IRyBc   100	+480 l}   140
@IKYh{j4   IL20M-100k-A/GXX	P8 c`fbkX2   100 kPa	#Pau\|e_   60	FXCMR\ BsQ   100	Q}JOU   140
XW H5d-   IL20M-250k-A/GXX	_ye |Y   250 kPa	/62!cp/F/D   60	w"F 9l   100	5I;&mW`1,`   140
j;G tu   IL20M-500k-A/GXX	539>WyG5   500 kPa	] mq|w   60	-IudgO]   100	j_[tu!~   140
octL"t8w   IL20M-01M0-A/GXX	A2FYBM`Q&D   1.0 MPa	sdrfsrNvB-   60	@{e}4s?7od   100	3%|&I:tI   140
aK~8B_5k8   IL20M-10M0-A/GXX	uZYF(Yu   10.0 MPa	,ng Cv;s   200	}#+^{P3;   250	I,DS@SK   300
Dpac^ST   IL20M-40M0-AXX	U>SShpmZA   40.0 MPa	T<>,lQs(a   230	RC"MdcD:]y   290	#z%fx   350
fbvL7* (   High Stability Line STARe, Piezoresistivechips for pressure measurements of 60 mbar to 400 bar
w.o@7|B1N   HS20V-06k0-A/G/D05	I][*j   6 kPa	N>1em!AS   60	`RW HN/U   100	 }v{LRRi   140	MchA{p&Ol   mV@5V
(lqC[:   HS20V-10k0-A/G/D05	G!##X: 6'   10 kPa	@1j    60	%2{ye   100	=XQ%t @z0   140
,qwuLBW   HS20L-35k0-A/G/DXX	C): 1?@   35 kPa	]/6z; ~3U   60	G*MUO#_iuh   100	o/)h"i0P   140
G_JA-@i%   HS20L-100k-A/G/DXX	q?:dCFw$x5   100 kPa	RB\uK 1+   60	Jpq~   100	(9d&   140
6@!`]tSCK   HS20M-250k-A/G/DXX	^76]0`gS   250 kPa	8,%^ M9zBP   60	V0YZp   100	6MW{,N   140
OT*mO&Z   HS20M-500k-A/G/DXX	J;e2&gB   500 kPa	i]4I [!   60	UkC!1Jy   100	$PPi5f}HD   140
>=>2m2z=   HS20M-01M0-A/G/DXX	}.(B}/$u   1.0 MPa	(t|Zn@uY   60	"sCRdx]_   100	5qm`J,~k   140
^ @5QP$.   HS20M-03M0-A/G/XX	_VN?#J)o   3.0 MPa	gf@:R'$:+   60	&z3o7rif$   100	 c?-H>u   140
I236RIq   HS20M-10M0-A/GXX	Y.UFbrv   10.0 MPa	zw[m9N5\h   200	!pW0qX\1n   250	x9g#<2w8   300
ND;#7/$>   HS20M-20M0-A08	~mxO7cy5Cg   20.0 MPa	Lq^)R   60	xp{tw$   100	) 10+@d   140
/3T1U   HS20M-40M0-A08	Q%G8U#Tm   40.0 MPa	2ilQXy   60	GefTdO.&   100	9A=,E&   140
F4 1=b4/   Harsh Environmental Line, Piezoresistivechips for pressure measurements of 2 bar to 16 bar
+\9NDfYIA   HE11C-200K-AXX	VONDc1%ga   200 kPa	T5h H   60	cwg"c4V   100	H{wl% G   140	/4Gt{ygSr   mV@5V
~>|ziHx   HE11C-400K-AXX	&8lZNv8;(p   400 kPa	T~e.PP   60	K0>zxqY   100	":ue-=&M   140
rILYI;'o   HE11C-800K-AXX	g- gV 2$I   800 kPa	4hj|cCrO   60	4r}51 N\   100	WsB?C&>x   140
@ 6vIap|   HE11C-01M6-AXX	e^voW"?%   1.6 MPa	{IjR^J=k   60	PW0LG^xp`   100	WyiQoN'q   140

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