新势力光电供应压力传感器芯片

新势力光电供应压力传感器芯片，采用高级电阻传感技术（STARe, Sensor Technology for AdvancedResistors），特点：稳定性高、适用于恶劣环境，该系列压力传感器芯片应用：腐蚀性、流动性、油性环境下的高精密压力传感测量，包括：汽车制造、工业、医疗、大型家电。 l5R H~F  
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vxwctJ&   Type	-r,J>2`l   Pressure	`)%eU~   Min	Rub""Ga   Typ	+<iw |vr   Max	A>PM'$"sT   Unit
[$V_qFv{   The Pressure sensor chips are based onthe STARe (Sensor Technology for Advanced Resistors)
:4WwCpgz,   Standard Line STARe, Piezoresistive chipsfor pressure measurements of 1 to 30 bar
\Lc pl-;?   SL21K-100k-A/GXX	>Z3}WMgBN   100 kPa	uwIZzz   40	w3& F e=c   70	`@`CZg   130	T&!>lqU!J   mV@5V
R1SEv$   SL21K-250k-A/GXX	?>,aq>2O$   250 kPa	R=IeAuZR4k   60	D8h~?phK   100	|S4yol   140
kL&^/([9   SL21K-500k-A/GXX	$;@s   500 kPa	:he vBBP   60	Z^h4%o-l{   100	/fD)/x   140
g<,|Q5bK   SL21K-01M0-A/GXX	fkx 9I m4   1.0 MPa	eAl&[_o|S   60	@z2RMEC~   100	H,uOshR   140
2=#O4k.@   SL21K-03M0-A/GXX	NZD X93   3.0 MPa	_h.[I8xgYG   60	j$Kubg(I5   100	];< [Cln%   140
hwO]{)%   Industrial Line STARe, Piezoresistivechips for pressure measurements of 100 mbar to 400 bar
PM_q"}-   IL20L-10k0-GXX	$GYy[-.`   10 kPa	F\ XzP\   30	}q~A( u   60	r` 3)sc   120	?5->F/f&   mV@5V
:Z/ig%   IL20L-35k0-A/GXX	,{.&xJ$   35 kPa	+)V6"XY-(   40	O4 }cv   100	8Mp    160
FUHjY   IL20M-03M0-A/GXX	Pajr`gU   3.0 MPa	1ltoLd\{   60	?$o8=h   100	lxxK6;r~>   140
-nU_eDy   IL20M-100k-A/GXX	PCFm@S@Q   100 kPa	M"P$hb'F   60	G&;W   100	Ds-%\@p   140
zKI(yC   IL20M-250k-A/GXX	jOe %_R   250 kPa	myXp]=Sb?   60	CqF< BE   100	SR\#>Qwx_   140
Y[pGaiN:   IL20M-500k-A/GXX	FS']3uJ/   500 kPa	+]AE}UXZoh   60	inhb>zB   100	.2u%;)S   140
Qs4Jl;Y_   IL20M-01M0-A/GXX	:1AOund   1.0 MPa	zZA I"\;W   60	J|K~a?&vN   100	}]f)Fz   140
!IT']kA   IL20M-10M0-A/GXX	?XeRL<n   10.0 MPa	)~WxNn3rx   200	` a@NYi6   250	.kBAUkL:   300
T$'Ja'9Kj   IL20M-40M0-AXX	VGe/;&1h   40.0 MPa	b@,w/Uw[*   230	8_ju.h[   290	fPspJug   350
8XTVpf4   High Stability Line STARe, Piezoresistivechips for pressure measurements of 60 mbar to 400 bar
:k JSu{p   HS20V-06k0-A/G/D05	<Q%o}m4Kt   6 kPa	G* n5`N@>7   60	O/Da8#S<   100	S"fnT*:.%   140	9}5Q5OZ   mV@5V
n /rQ*hr   HS20V-10k0-A/G/D05	B_:K.]DK`   10 kPa	\24neD4cM@   60	:JPI#zZun   100	S6Kaw   140
m,8A2;&,8   HS20L-35k0-A/G/DXX	Q%@l`V)Rs   35 kPa	KaO8rwzDN   60	om@` NW   100	U^Hymgb%   140
B<_T"n'#b   HS20L-100k-A/G/DXX	_{-GR-   100 kPa	jb77uH_   60	Th@L68   100	\z<'6,b   140
EV]exYWB   HS20M-250k-A/G/DXX	0PTB3-   250 kPa	2 )mKcUL-   60	$yOfqr   100	N7 Dm,Q]   140
KJSN)yn\   HS20M-500k-A/G/DXX	UD"e:O_   500 kPa	~Ge-7^Fo7   60	lQ)ZsFs=   100	"i9$w\lm   140
ynDa4HB   HS20M-01M0-A/G/DXX	8a"aJYj   1.0 MPa	(}bP`[@rX!   60	Lt=#tu&d   100	U4M!RdG   140
d4gl V`%.   HS20M-03M0-A/G/XX	r?V\X7` +   3.0 MPa	6\'v_A O   60	< R0c=BZ>   100	Q +qN`   140
C9({7[k^%   HS20M-10M0-A/GXX	2Xgn[oI{   10.0 MPa	!%]]lxi   200	!MQo=k   250	^D/*Hp _   300
oDA1#-   HS20M-20M0-A08	]Kil/Y   20.0 MPa	@lBR;B"   60	dH?;!sJ   100	-`#LrO;n   140
M="%NxuS   HS20M-40M0-A08	|jc87(x<   40.0 MPa	G8eAj%88   60	Rl<~:,D   100	~h0SD(   140
Pp#!yMxBr   Harsh Environmental Line, Piezoresistivechips for pressure measurements of 2 bar to 16 bar
8vc4J5   HE11C-200K-AXX	O:#t> ;   200 kPa	Gz$Ds aG   60	D55dD>   100	.2G n)dZU   140	Y{um1 )k   mV@5V
q4lL7@_   HE11C-400K-AXX	aCy2.Qn   400 kPa	W<k) '|   60	"X"DTP1b   100	6BNOF66kH   140
,8EeSnI   HE11C-800K-AXX	Cz m`5   800 kPa	lvcX}{>\   60	nA5v+d-<T   100	z2S53^C*   140
f4]nz:2   HE11C-01M6-AXX	d;H1B/   1.6 MPa	<-X)<k   60	i%v^Zg&FU   100	Dy0cA| E   140

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