新势力光电供应压力传感器芯片

新势力光电供应压力传感器芯片，采用高级电阻传感技术（STARe, Sensor Technology for AdvancedResistors），特点：稳定性高、适用于恶劣环境，该系列压力传感器芯片应用：腐蚀性、流动性、油性环境下的高精密压力传感测量，包括：汽车制造、工业、医疗、大型家电。 yDmNPk/  
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k &TZ    Type	LmCr[9/   Pressure	e, *E`ol   Min	v2Lx4:dzi   Typ	H]i.\2z   Max	2L\}   Unit
d2cslDd   The Pressure sensor chips are based onthe STARe (Sensor Technology for Advanced Resistors)
DjzHEqiH   Standard Line STARe, Piezoresistive chipsfor pressure measurements of 1 to 30 bar
AcRrk   SL21K-100k-A/GXX	V]4g- CS[   100 kPa	{0~ Sj%Ze   40	c:[z({ `   70	rf}@16O$'   130	qeM`z   mV@5V
pK_n}QW   SL21K-250k-A/GXX	i-kj6N5   250 kPa	d'bAM{R>   60	2kG(\+\   100	fLGZ@-qA0   140
c%?31t   SL21K-500k-A/GXX	E[IjeJB5   500 kPa	2=?:(e9   60	/RWQ+Zf-Y]   100	397IbZ\   140
,}8|[)"   SL21K-01M0-A/GXX	whoM$  &   1.0 MPa	KM'*+.I   60	 ~OdE!!   100	A(j9T,!   140
*F4"mr|\   SL21K-03M0-A/GXX	NA=I7I@   3.0 MPa	'3<AzR2   60	&>jSuvVT   100	seNJ6p=`   140
ET2^1X#j   Industrial Line STARe, Piezoresistivechips for pressure measurements of 100 mbar to 400 bar
G@.TE7a2Z   IL20L-10k0-GXX	#L3heb&9   10 kPa	S)n+E\c   30	6ct'O**k*&   60	U3oMY{{EJ   120	q3_ceXYU   mV@5V
w!G PPW(   IL20L-35k0-A/GXX	Xc>M_%+R   35 kPa	@2X{e7+D   40	[5"F=tT7WP   100	AlVBhR`   160
>14x.c   IL20M-03M0-A/GXX	mi`jY0e2   3.0 MPa	w$`[C+L   60	i(hL6DLD   100	Qp?+G~*   140
jV)4+D   IL20M-100k-A/GXX	z\kiYQ6kA   100 kPa	n7>L&?N#y#   60	WP}NHz4H   100	,NA _pvH)   140
CogN1,GJ   IL20M-250k-A/GXX	bF"1M#u:   250 kPa	9ZYT#h   60	>QA;02   100	GW;\3@o   140
bE6:pGr   IL20M-500k-A/GXX	5`3Wua   500 kPa	0 t^Tm0RzH   60	ab@1JAgs   100	CRh.1-   140
4.t72*ML   IL20M-01M0-A/GXX	o<\uH r3   1.0 MPa	n2p(@   60	DwNEqHi   100	X<8    140
57S!X|CE   IL20M-10M0-A/GXX	Mhwuh`v%   10.0 MPa	x("V+y*   200	`B%IHr   250	q+J;^u"E   300
x^959QO~   IL20M-40M0-AXX	->u}b?aF   40.0 MPa	@ 5,Xr`]   230	02F\1fXS   290	9sId2py]W   350
5 A2u|UU   High Stability Line STARe, Piezoresistivechips for pressure measurements of 60 mbar to 400 bar
d7U%Q8?wUR   HS20V-06k0-A/G/D05	6!|/(~   6 kPa	cvk$ I"q+   60	a0 /[L   100	G@=H=' :~   140	-|WQs'%O   mV@5V
{kdS t1   HS20V-10k0-A/G/D05	`JZ`j7f   10 kPa	(j%;)PTe+&   60	$:u5XJx   100	nvOJY6)$V   140
=;z42oS   HS20L-35k0-A/G/DXX	<?E~Qc t   35 kPa	c*N>7IF,   60	_9B ^@~   100	5f-eWW]!   140
?}Y;/Lwx   HS20L-100k-A/G/DXX	{+N7o7   100 kPa	%-Oo92tP   60	$OP w$   100	T:|PSJc0   140
t \;,$i   HS20M-250k-A/G/DXX	~}@cSv'(1   250 kPa	4.&hV?Kxz   60	C#tY}; t   100	W u|ANc   140
4RDdfY\%u   HS20M-500k-A/G/DXX	.% {4B,d$   500 kPa	cd3;uB4\,   60	.DN)ck:e;   100	YCI- p p   140
T~G~M/   HS20M-01M0-A/G/DXX	gu|cQ2xV   1.0 MPa	6_a~ 4_#   60	iRsK;)<   100	? f>pKe   140
4cQ|"sOzD   HS20M-03M0-A/G/XX	V'm4DR#M   3.0 MPa	n/vKxtW   60	Cj3C%W   100	rL3 f%L   140
]`H8r y2   HS20M-10M0-A/GXX	7>$&CWI   10.0 MPa	i286`SLU   200	89+Q^79m   250	@@~Ql   300
<xO" E%t   HS20M-20M0-A08	>[&Z s3>   20.0 MPa	0hoi=W6AQ   60	$9PscubM4   100	])D39   140
[W ,}&   HS20M-40M0-A08	kr{eC/Q"   40.0 MPa	TBr@F|RXiO   60	a PH6 R<G   100	sUTfY|<7|   140
E(/M?>t-   Harsh Environmental Line, Piezoresistivechips for pressure measurements of 2 bar to 16 bar
@p$$BUb   HE11C-200K-AXX	]<g`rR 7}   200 kPa	#z&@f   60	fXfO9{E   100	)DwHLaLW   140	JV_V2L1Ut   mV@5V
c@<vFoq   HE11C-400K-AXX	:o=a@Rqx   400 kPa	H COE'24I   60	)D>= \Me   100	&vHfuM`   140
S*9qpes-m|   HE11C-800K-AXX	Lcow2 SbH   800 kPa	EN/e`S$)   60	MFqM6_   100	;:#g\|(<+   140
h&O8e;S#   HE11C-01M6-AXX	gkRbb    1.6 MPa	lq*{2M{[   60	t IO 'ky   100	]^c]*O[8   140

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