新势力光电供应压力传感器芯片

新势力光电供应压力传感器芯片，采用高级电阻传感技术（STARe, Sensor Technology for AdvancedResistors），特点：稳定性高、适用于恶劣环境，该系列压力传感器芯片应用：腐蚀性、流动性、油性环境下的高精密压力传感测量，包括：汽车制造、工业、医疗、大型家电。 l'c|I &Y]  
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jMgNi@   Type	I A''-+9   Pressure	ytHa[U   Min	7HFw*;   Typ	)KkA<O}f   Max	24]O0K   Unit
ZcIwyh(`   The Pressure sensor chips are based onthe STARe (Sensor Technology for Advanced Resistors)
$YFn$.70\   Standard Line STARe, Piezoresistive chipsfor pressure measurements of 1 to 30 bar
TqCzpf&&h/   SL21K-100k-A/GXX	!k Hpw2   100 kPa	UtY<R   40	DOf[?vbu   70	n&k1'KL&   130	r*y4Vx7   mV@5V
~u 7a50   SL21K-250k-A/GXX	s!uewS.   250 kPa	1NA>W   60	`2 Z    100	0!\pS{$zB   140
yG{'hx6H   SL21K-500k-A/GXX	iw<+rh*C   500 kPa	8q}`4wC D$   60	E2 #XXc   100	vxY7/_]   140
HSq&'V   SL21K-01M0-A/GXX	6imDA]5N&   1.0 MPa	DCFYpkR%   60	0vf2wBK'T   100	sYgpK92   140
N'3Vt8o,   SL21K-03M0-A/GXX	7l%O:M(\   3.0 MPa	' !ZFK}   60	AI/xOd!a   100	?HAWw'QW   140
szGp<x v_p   Industrial Line STARe, Piezoresistivechips for pressure measurements of 100 mbar to 400 bar
FNtcI7   IL20L-10k0-GXX	_.yBX\tf[   10 kPa	8?J\   30	Gd%KBb   60	ESL(Mf'   120	7P|GKN~   mV@5V
3I@j=:(%Y   IL20L-35k0-A/GXX	vSX71   35 kPa	L1 O\PEeT   40	aU4v-9@U8   100	rq:R6e   160
d*4fl.   IL20M-03M0-A/GXX	o&-q.;MY   3.0 MPa	uR"(0_   60	ULkjY1&   100	7`thM/fN   140
IJhJfr0)Oo   IL20M-100k-A/GXX	2*ZB[5_V   100 kPa	%D :Mt|   60	]KBzuz%   100	S8TJnv`?'   140
]Wa.k   IL20M-250k-A/GXX	OjcxD5"v9   250 kPa	pA&CBXio   60	h}nceH0s3d   100	8F9sKRq|rO   140
PVC\&YF   IL20M-500k-A/GXX	Z^zUb    500 kPa	* _)xlpy   60	ou0(C`   100	F]:@?}8R   140
{R5Q{]dK3   IL20M-01M0-A/GXX	mQ*:?\@   1.0 MPa	]k-<[Z;I,   60	_VFl.U,    100	/ q*n*j   140
Y&6vTU   IL20M-10M0-A/GXX	tF}Vs}   10.0 MPa	s,!+wHv_8   200	-|"W|K?nq   250	f5.rzrU   300
X"0n*UTF,   IL20M-40M0-AXX	IxNY%&* `   40.0 MPa	YII1Z'q   230	5xtIez]x?   290	_ +q.R   350
uQIa"u7   High Stability Line STARe, Piezoresistivechips for pressure measurements of 60 mbar to 400 bar
kmXpj3   HS20V-06k0-A/G/D05	>AX&PMb`   6 kPa	;'CWAJK   60	e@}zp   100	p~1!O]qLt   140	;4tmnC>OnA   mV@5V
BU |]4   HS20V-10k0-A/G/D05	A2LqBirkl   10 kPa	E`]lr[   60	0.7*2s-   100	Z#0hh%E"|y   140
" lar~   HS20L-35k0-A/G/DXX	6Ef GJq   35 kPa	x;w&JS1V   60	-L<''2t   100	!|}(tqt   140
/G[; kR"   HS20L-100k-A/G/DXX	%P05k   100 kPa	YaI8hj@}   60	ME4Ir   100	tai   140
WtlPgT;wE   HS20M-250k-A/G/DXX	t F^|,9_<   250 kPa	vF,\{sgW   60	=23JE'^=   100	8JvF4'zx   140
DWT4D)C,U   HS20M-500k-A/G/DXX	QhV!%}7   500 kPa	 (o`"s~)   60	1xAZ0X#   100	aM/sD=}   140
N4y$$.uv2   HS20M-01M0-A/G/DXX	qo{2 CYG\+   1.0 MPa	?L.c~w;l   60	;/.ZjTRw   100	Eo)w f=rE9   140
a:nMW'!   HS20M-03M0-A/G/XX	Hp`Mp)1s   3.0 MPa	DY]\@<ez   60	Rf7*Ut wVr   100	(KQAKEhD!   140
t<'-?B2g   HS20M-10M0-A/GXX	m<]b]FQ   10.0 MPa	KFxy,Z$-4   200	T 9lk&7W   250	G;r-f63N   300
+o&&5&HR   HS20M-20M0-A08	n$>E'oG2t   20.0 MPa	:i'jQ<|wZN   60	I[b@U<\   100	;yh}$)^9   140
nU]4)t_o\   HS20M-40M0-A08	Sg$14B   40.0 MPa	zQsu~8PX   60	'J*)o<%   100	CH h]v.V   140
+Fu=9j/,j   Harsh Environmental Line, Piezoresistivechips for pressure measurements of 2 bar to 16 bar
L\p@1N?K   HE11C-200K-AXX	e>"/Uii   200 kPa	4E&=qC]S   60	^ 'jJ~U   100	WR;"^<i9   140	("HT0&#a   mV@5V
{-X8MisI   HE11C-400K-AXX	e*[M*u   400 kPa	8p3pw=p   60	3PS(1   100	~c8Z9[QW   140
Rxe sK   HE11C-800K-AXX	S(;3gQ77   800 kPa	+jk_tPSe   60	q!l[^t|;   100	mRIW9V   140
O/;$0`~hY   HE11C-01M6-AXX	y~jKytq^@   1.6 MPa	9p,<<5{   60	DkO>?n:-C   100	0>jo+b\D$   140

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