新势力光电供应压力传感器芯片

新势力光电供应压力传感器芯片，采用高级电阻传感技术（STARe, Sensor Technology for AdvancedResistors），特点：稳定性高、适用于恶劣环境，该系列压力传感器芯片应用：腐蚀性、流动性、油性环境下的高精密压力传感测量，包括：汽车制造、工业、医疗、大型家电。 C@UJOB  
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=S[FJaIu7   Type	TA@tRGP>   Pressure	x,w`OMQ}c   Min	\{MrQ2jd   Typ	+.gf]|   Max	 $`XN   Unit
Lr24bv \   The Pressure sensor chips are based onthe STARe (Sensor Technology for Advanced Resistors)
\Sq"3_m4T   Standard Line STARe, Piezoresistive chipsfor pressure measurements of 1 to 30 bar
@cS1w'=   SL21K-100k-A/GXX	we H@S   100 kPa	mOz&6T<|   40	5}d/8tS   70	%];h|[ax]   130	=_?pOq   mV@5V
9#EHXgz   SL21K-250k-A/GXX	}4\!7]FVYX   250 kPa	C$'D]fX   60	68J 9T^84   100	35%[DUkb   140
)4'x7Qg/   SL21K-500k-A/GXX	M8#*zCp{5   500 kPa	StdS$XW   60	4(Cd   100	/.|A   140
[B"dH-r7   SL21K-01M0-A/GXX	;Txv-lfS   1.0 MPa	)O2Nlk~l&   60	j*eUF-J1   100	wZo.ynXT   140
)DGz`->   SL21K-03M0-A/GXX	!sfXq"F   3.0 MPa	$ IxU6=ajn   60	L= :d!UF   100	~$&:NB1~q   140
m{bZRkt   Industrial Line STARe, Piezoresistivechips for pressure measurements of 100 mbar to 400 bar
PkPDVv   IL20L-10k0-GXX	kb"_6,[Ms   10 kPa	!^ )wPmk   30	tp6csS,   60	X6LhM   120	M1/M}~   mV@5V
[5?4c'Ev   IL20L-35k0-A/GXX	E(QZ!'%K+m   35 kPa	()QOZ+x_!   40	?Y?gzD   100	z.2r@Psk   160
|+Hp+9J   IL20M-03M0-A/GXX	:mXGIRi   3.0 MPa	[K cki+   60	"*++55   100	T~i%j@Q.6   140
_pz,okO[V   IL20M-100k-A/GXX	JmU<y   100 kPa	3I9T|wQ-]   60	54q4CagFq   100	HE#,(;1i   140
+Dx1/I   IL20M-250k-A/GXX	w/b>awI   250 kPa	z-EwXE   60	X,C*qw@   100	Vq3gceo'0A   140
kzZDtI)   IL20M-500k-A/GXX	*4<4   500 kPa	o"rq/\ovv   60	K0w<[CO   100	gM4Pj[W   140
IDy_L;'`*   IL20M-01M0-A/GXX	YBb)/ZghY   1.0 MPa	Bk?8 zYp   60	Y/.AUN Z   100	2v0!` &?M{   140
v8ba~   IL20M-10M0-A/GXX	 !M   10.0 MPa	BjJ,"sT   200	2O eshkE   250	WtEI] WO   300
?b||Cr   IL20M-40M0-AXX	\7pipde   40.0 MPa	KAd_zkUA   230	z{ptm7   290	6cJ<9i &   350
I*EJHBsQ5   High Stability Line STARe, Piezoresistivechips for pressure measurements of 60 mbar to 400 bar
5L8&/EN9-   HS20V-06k0-A/G/D05	_ Yfmxn8V   6 kPa	PK_s#uC   60	N_UQ   100	G6ayMw]OF   140	B[r<m J   mV@5V
pmD4j8F_   HS20V-10k0-A/G/D05	.*BA 1sjE   10 kPa	R{HV]o|qk   60	I%oRvg|q   100	o]Gguw5W{   140
5iVQc-m&   HS20L-35k0-A/G/DXX	"!O1j r;   35 kPa	oL]mjo=jN   60	i3#'*7f%j   100	*h$&0w y   140
(S`6Q   HS20L-100k-A/G/DXX	?WQNIX4   100 kPa	~.J,A\F   60	U&X2cR &a   100	Gav"C{G   140
w5`#q&?   HS20M-250k-A/G/DXX	iv*V#J>   250 kPa	owvS/"@   60	<47k@Ym    100	}Z\wH*s`   140
"+)K |9T#   HS20M-500k-A/G/DXX	hoenQ6N^:   500 kPa	d+;gw*_Ei   60	8'A72*dhX   100	ad9CsvW   140
8$0\J_   HS20M-01M0-A/G/DXX	~:4~2d|   1.0 MPa	,>n% ~'gb   60	/@hJpz|+    100	y`yZR _   140
]IZ>2!6r    HS20M-03M0-A/G/XX	&SH1q_&BQ   3.0 MPa	5u r)uz]w8   60	w&Y{1rF>   100	>O#grDXb   140
Tkw;pb   HS20M-10M0-A/GXX	oKA&An   10.0 MPa	9'nH2,_   200	y500Xs[c   250	6.5wZN9<|   300
2C$R4:Ssw)   HS20M-20M0-A08	Ts9ktPlm   20.0 MPa	=bLY /   60	2#vv$YD   100	G,XPT,:%   140
Tde0~j}   HS20M-40M0-A08	"0CjP+1k   40.0 MPa	O/Rhf[7v*   60	ujr(K=E   100	hIYTe   140
FY'ty@|_s   Harsh Environmental Line, Piezoresistivechips for pressure measurements of 2 bar to 16 bar
t P"\J(x   HE11C-200K-AXX	-oyO+1V   200 kPa	krB'9r<wa`   60	D)Q)NI   100	[8XLK4e   140	8z2Rry w   mV@5V
jZpa0grA   HE11C-400K-AXX	FS"eM"z   400 kPa	1u|V`J)0   60	F%d\~Vj   100	-c%dvck^,   140
2HD]?:Fk7   HE11C-800K-AXX	eq[Et +   800 kPa	amWD-0V   60	.]x2K-Sf   100	-|S]oJy   140
]y@F8$D!   HE11C-01M6-AXX	@+LfQY   1.6 MPa	\4d.sy0&>-   60	C&~1M}I   100	b'YE9E   140

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