新势力光电供应压力传感器芯片

新势力光电供应压力传感器芯片，采用高级电阻传感技术（STARe, Sensor Technology for AdvancedResistors），特点：稳定性高、适用于恶劣环境，该系列压力传感器芯片应用：腐蚀性、流动性、油性环境下的高精密压力传感测量，包括：汽车制造、工业、医疗、大型家电。 )0k']g5  
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y+9h~,:A   Type	g JjN<&,   Pressure	ecj7BT[mLI   Min	DIaYo4   Typ	N>|XS ,   Max	+pf5\#l?   Unit
Y a #h'+}   The Pressure sensor chips are based onthe STARe (Sensor Technology for Advanced Resistors)
S|em[D[Y^   Standard Line STARe, Piezoresistive chipsfor pressure measurements of 1 to 30 bar
rv>^TR*,!   SL21K-100k-A/GXX	KL  [ek   100 kPa	Y ya`&V   40	Ub_4yN;   70	QJn`WSw$_-   130	xyA-P& N   mV@5V
ibpzeuUl   SL21K-250k-A/GXX	>Kivuc   250 kPa	,+`HQdq   60	>\2: \wI   100	HfB@vw^   140
;@3FF   SL21K-500k-A/GXX	!TKkec8$   500 kPa	usFfMF X   60	~+G#n"Pn   100	c~=B0K-   140
?F7o!B   SL21K-01M0-A/GXX	rJJ[X4$   1.0 MPa	J=W0Xi!   60	71fk.16   100	W_`A"WdT.   140
]y@F8$D!   SL21K-03M0-A/GXX	@+LfQY   3.0 MPa	)IL #>2n?   60	B@y(.   100	&a,OfSz   140
A"v {~   Industrial Line STARe, Piezoresistivechips for pressure measurements of 100 mbar to 400 bar
%JZZ%xc   IL20L-10k0-GXX	+7V{ABfGl   10 kPa	Wg`AZ=t   30	7.Kc:7   60	CZ <~3bEF   120	5O/i3m26   mV@5V
MJ`3ta   IL20L-35k0-A/GXX	en F:>H4   35 kPa	bzN-*3YE=   40	.7NNT18   100	'8Ztj   160
nmU_N:Y   IL20M-03M0-A/GXX	a:,y Z   3.0 MPa	I6!5Yj]O"   60	bx4'en#   100	>EsziRm   140
/u%h8!"R   IL20M-100k-A/GXX	nl aM   100 kPa	H9)m^*   60	M:KbD|   100	*l+OlQI0+   140
B+d<F[|   IL20M-250k-A/GXX	(>4aibA'P   250 kPa	2&PPz}Sw   60	51C2u)HE   100	<h).fX   140
[#Lc]$   IL20M-500k-A/GXX	OLGBt   500 kPa	]uj=:@   60	=]`lN-rYw   100	}v9\F-0>Q   140
w%AcG~`j!B   IL20M-01M0-A/GXX	T<3BT   1.0 MPa	'^BV_ QQ   60	o%{'UG   100	Migd(uw'   140
PNF?;*`-{7   IL20M-10M0-A/GXX	oI:o"T77sA   10.0 MPa	gWABY%!}   200	I:bD~Fb3   250	QxuhGA   300
znJhP}(   IL20M-40M0-AXX	eI.2`)>   40.0 MPa	-9 !.m   230	t^ ]$!H   290	EN{]Qb06A   350
a,F&`Wg   High Stability Line STARe, Piezoresistivechips for pressure measurements of 60 mbar to 400 bar
Jd\apBIf   HS20V-06k0-A/G/D05	_lzyMEdr   6 kPa	!Fo*e   60	iv`O/T   100	;6@r-r   140	V.ht, ~l   mV@5V
F' U 50usV   HS20V-10k0-A/G/D05	y@ 2epY?{   10 kPa	dzK{ Z   60	p4IZ    100	$aHAv/&(5   140
4'$g(+z   HS20L-35k0-A/G/DXX	mk7&<M   35 kPa	} VJfJ/   60	k#[F`   100	*k"|i*{   140
lis/`B\x   HS20L-100k-A/G/DXX	H&r,FmI@   100 kPa	3lV^B[$   60	f\'{3I29   100	N#lDW~e'   140
XwV'Ha   HS20M-250k-A/G/DXX	`V)Z)uN{0   250 kPa	1/p*tZP8i   60	gtUUsQ%y.   100	J=.`wZQkS   140
Rqwzh@}   HS20M-500k-A/G/DXX	UAR5^   500 kPa	2G$SpfeIu   60	7+x? "4   100	rc+C?)S   140
1B),A~Ip   HS20M-01M0-A/G/DXX	BCe_@   1.0 MPa	r=yK,d/1   60	n wI!O   100	yj4+5`|f   140
`eu9dLzH   HS20M-03M0-A/G/XX	^(viM?*   3.0 MPa	*6xgctk   60	{3N'D2N   100	%OgS^_tu   140
9 qS"uj   HS20M-10M0-A/GXX	iC iZJ"   10.0 MPa	kB5.(O   200	L[5=h   250	<~ JO s2   300
2Z20E$Cb   HS20M-20M0-A08	''\;z<v   20.0 MPa	Ltjbxw"Qd   60	NEa>\K<\   100	(C]o,7cYS   140
i#%aTRKHd6   HS20M-40M0-A08	A(]H{>PMy   40.0 MPa	Qr Wj>uR   60	;[RZ0Uy=   100	yV)la@c   140
#+$Q+Z|6k   Harsh Environmental Line, Piezoresistivechips for pressure measurements of 2 bar to 16 bar
y4+;z2'>   HE11C-200K-AXX	1Bxmm#   200 kPa	r- ,e;o>9   60	KR7@[    100	A.UUW   140	;-UmY}MU   mV@5V
\QU^>23   HE11C-400K-AXX	Ts~L:3oaQ   400 kPa	R *F l8   60	u1xSp<59C   100	9W5onn   140
|d6T/Uxo   HE11C-800K-AXX	|p$spQ   800 kPa	43V}#DA@   60	a#T]*(Yq)   100	\@&_>us   140
/  g 2b   HE11C-01M6-AXX	V]90   1.6 MPa	%4HRW;IU   60	J*9$;   100	HYmn:?H   140

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