新势力光电供应压力传感器芯片

新势力光电供应压力传感器芯片，采用高级电阻传感技术（STARe, Sensor Technology for AdvancedResistors），特点：稳定性高、适用于恶劣环境，该系列压力传感器芯片应用：腐蚀性、流动性、油性环境下的高精密压力传感测量，包括：汽车制造、工业、医疗、大型家电。 _L$)2sl1R  
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@)9REA( U   Type	5gO/-Zj   Pressure	JzHqNUn*M   Min	PPUEkvH W   Typ	[?;`x&y~y   Max	^$e0t;W=   Unit
dVvZu% DFp   The Pressure sensor chips are based onthe STARe (Sensor Technology for Advanced Resistors)
6kP7   Standard Line STARe, Piezoresistive chipsfor pressure measurements of 1 to 30 bar
4uFIpS|rq   SL21K-100k-A/GXX	A ?#]s   100 kPa	CT|z[^   40	6,B-:{{e"   70	2>\b:   130	EC<5M5Lc   mV@5V
\s,Iz[0Vfz   SL21K-250k-A/GXX	E|Q{]&$;Z"   250 kPa	0Xp nbB~~I   60	cN62M=**   100	- o4@#p>>   140
| @uq()   SL21K-500k-A/GXX	"]v uD   500 kPa	 ~q*i;*   60	E3y6c)<   100	l+t #"3   140
q5%2WM]6   SL21K-01M0-A/GXX	iOl%-Y   1.0 MPa	U9x4j_.q   60	ldK>HxM%Z   100	o1e4.-xI   140
+Dd"41   SL21K-03M0-A/GXX	K*[9j 0   3.0 MPa	\xF;{}v   60	3QIdN   100	P= e4lF.   140
\$j^_C>   Industrial Line STARe, Piezoresistivechips for pressure measurements of 100 mbar to 400 bar
dl:-k r8   IL20L-10k0-GXX	Jms=YLIAA   10 kPa	;{Xy`{Cg!   30	`Uv)Sf{   60	Bw6L;Vu   120	~eHRlXL'   mV@5V
J6DnPaw-G   IL20L-35k0-A/GXX	I|Z/`9T   35 kPa	10?qjjb&   40	XjxPIdX_H   100	^/k,   160
$.wA?`1aSk   IL20M-03M0-A/GXX	Mxo6fn6-46   3.0 MPa	/oFc03d   60	R0vww_fz   100	B=r0?%DX"1   140
cI3 y   IL20M-100k-A/GXX	i=-8@   100 kPa	!Qcir&]C>   60	YwGHG{?e   100	3I]Fdp)'   140
wDMjk2YN   IL20M-250k-A/GXX	3^XVQS***   250 kPa	|gW     60	V'j@K!)~xR   100	nx B32   140
DKTD Z*   IL20M-500k-A/GXX	_|X7 n~   500 kPa	[]"=]f{1};   60	* MEe,4   100	%&tb9_T)d   140
|0kXCq   IL20M-01M0-A/GXX	%J _ymJ'pd   1.0 MPa	Ssf+b!e]   60	z{|LQt6q   100	F?cq'd   140
BRa{\R^I   IL20M-10M0-A/GXX	h8jB=e, H   10.0 MPa	` 5#hjLe   200	=e {.yggE   250	TY~Vi OC   300
3b@VY'P   IL20M-40M0-AXX	( UGol[f<   40.0 MPa	4%J|DcY2   230	O:e#!C8^   290	O#:&*Mv   350
\_9rr6^"   High Stability Line STARe, Piezoresistivechips for pressure measurements of 60 mbar to 400 bar
m6i%DE   HS20V-06k0-A/G/D05	R*bmu   6 kPa	oNIFx5*Z   60	%'0&ElQ   100	qp&4 1   140	bAiJn<   mV@5V
(sCAR=5v\   HS20V-10k0-A/G/D05	@1g&Z}L o   10 kPa	Xpl?g=B&u   60	,Kw5Ro`I:   100	.,M;hu Rg   140
Y@%`ZPJ   HS20L-35k0-A/G/DXX	K&dT(U   35 kPa	a+Ab]m8`   60	*ik/p   100	,{8v4b-   140
Kam]Mn'   HS20L-100k-A/G/DXX	c`jDW S   100 kPa	:u/mTZDi   60	b#a@rh   100	1 i3k   140
`WnQ   HS20M-250k-A/G/DXX	.6m_>Y6   250 kPa	9Ejyg*   60	S-!=NX&C   100	\$pkk6Q3,w   140
:YNp8!?T?   HS20M-500k-A/G/DXX	V`bs&5#Sx   500 kPa	7ZsA5%s=,   60	/:p8I6;   100	{G*OR,HN   140
!ni>\lZ   HS20M-01M0-A/G/DXX	?WHy0x20   1.0 MPa	FN?3XNp.   60	OipqoI2   100	d~Mg vh'   140
^npJUa   HS20M-03M0-A/G/XX	+pp9d-n   3.0 MPa	j g_n7   60	C-w5KW   100	NY!jwb@%   140
nIBFk?)6   HS20M-10M0-A/GXX	9Cvn6{   10.0 MPa	|"7Y52d   200	%Q~CB7ILK   250	~xDw*AC-   300
|[1D$Qv   HS20M-20M0-A08	5<+KR.W   20.0 MPa	/!T> b:0   60	Z<"K_bj   100	Cq\I''~8   140
,.v7FM^gO   HS20M-40M0-A08	!w2gGy:I>   40.0 MPa	ZnfNQl[   60	98=la,^$   100	>]?H`>4(   140
lddp^ #f   Harsh Environmental Line, Piezoresistivechips for pressure measurements of 2 bar to 16 bar
&y\sL"YL!   HE11C-200K-AXX	-JV~[-,   200 kPa	~uj;qq   60	4c159wsnQ   100	8)wt$b   140	jd:B \%#![   mV@5V
P8I*dvu _   HE11C-400K-AXX	>/^#Drwb!i   400 kPa	ZjVWxQ   60	c/aup   100	0rE(p2   140
)/|6'L-2   HE11C-800K-AXX	SEd5)0X^   800 kPa	6`\ya@   60	2]WE({P   100	uf'4'   140
G>z,#Xt   HE11C-01M6-AXX	0KvVw rWJ   1.6 MPa	]Pc^#=(R0   60	k\7:{y@,   100	tIuoD+AW   140

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