新势力光电供应压力传感器芯片

新势力光电供应压力传感器芯片，采用高级电阻传感技术（STARe, Sensor Technology for AdvancedResistors），特点：稳定性高、适用于恶劣环境，该系列压力传感器芯片应用：腐蚀性、流动性、油性环境下的高精密压力传感测量，包括：汽车制造、工业、医疗、大型家电。 x@  =p  
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!BoGSI   Type	fV"Y/9}(   Pressure	Wg}KQ6 6   Min	p cLKE ZK   Typ	l+Wux$6U   Max	8>C4w 5kF   Unit
,Q"'q0hM=   The Pressure sensor chips are based onthe STARe (Sensor Technology for Advanced Resistors)
0fqcPi   Standard Line STARe, Piezoresistive chipsfor pressure measurements of 1 to 30 bar
'Dfs&sm   SL21K-100k-A/GXX	5HbHJ.|r   100 kPa	)w].m   40	?T/4 =   70	,kJ'_mq   130	B!&5*f}*   mV@5V
I=L["]   SL21K-250k-A/GXX	]xvA2!)Q   250 kPa	g(&cq   60	R2)@Q   100	?xaUWD   140
9tpyrGv   SL21K-500k-A/GXX	:j]6vp6   500 kPa	<Y)14w%   60	~ikp'5   100	Ft>B% -;   140
]>~.U~   SL21K-01M0-A/GXX	" ==c   1.0 MPa	f,ro1Nke   60	1:eWZ]B5"   100	j}Tv/O,f   140
 m}yu4   SL21K-03M0-A/GXX	va@;V+cD   3.0 MPa	l4RqQ+[KA;   60	@JSWqi>   100	!8p>4|VM   140
UA.Tp[u   Industrial Line STARe, Piezoresistivechips for pressure measurements of 100 mbar to 400 bar
/>xEpR3_A   IL20L-10k0-GXX	e,OXngC   10 kPa	t3$cX_   30	S*Ea" vBA   60	OXLB{|hH80   120	/[6wm1?!   mV@5V
xiW}P% bf   IL20L-35k0-A/GXX	@6ckB (   35 kPa	R V#w0 r   40	HP*)^`6X   100	0-p^oA   160
-, +o*BP   IL20M-03M0-A/GXX	_CNXyFw.7   3.0 MPa	(l wV(M   60	,q* |R  O   100	(U5XB [r_P   140
}'<Z&NW6   IL20M-100k-A/GXX	(B\Kb4m   100 kPa	xDe^>(,"   60	.x$V~t   100	6%EpF;T`   140
R.|h<bur   IL20M-250k-A/GXX	-}@C9Ja[?   250 kPa	&#fPJc   60	qo9&e~Y<G   100	1N),k5I   140
oxFd@WV5   IL20M-500k-A/GXX	K;/f?3q   500 kPa	FBNi (D   60	O#tmB?n*   100	->|eMV'd   140
=0e>'Iw2   IL20M-01M0-A/GXX	tDAX pi(   1.0 MPa	[]\-*{^r   60	pe[huYE   100	6+sz4   140
V,ZRX}O   IL20M-10M0-A/GXX	pz2E+o   10.0 MPa	s,-<P1}/   200	P3bRv^   250	G]l/L\{   300
>CCy2W^W   IL20M-40M0-AXX	mC]Krnx   40.0 MPa	PJb/tKC   230	!6.LSY,E   290	jhG6,;1zMI   350
`iuQ.I   High Stability Line STARe, Piezoresistivechips for pressure measurements of 60 mbar to 400 bar
d}E6d||A   HS20V-06k0-A/G/D05	3Mh_&% !O   6 kPa	D{]w+   60	= r=/L   100	D6_#r=08   140	M9V,;*   mV@5V
a"O9;&};&   HS20V-10k0-A/G/D05	uF,%N    10 kPa	W[!bF'-10   60	^CwS'/fdN   100	;XY#Jl>tg   140
oz'jt} ?   HS20L-35k0-A/G/DXX	-?T|1FA,   35 kPa	MMRO@MdfV   60	"=f,4Zbj   100	ORo +]9)Yv   140
+DT tKj   HS20L-100k-A/G/DXX	Sr10ot&ox   100 kPa	t I+]x]m+   60	#z}IW(u<   100	({rescQB   140
ng2yZ @$   HS20M-250k-A/G/DXX	_#UhXXD   250 kPa	2\}6b4   60	M>Ws}Y   100	5tbi};   140
'vIVsv<p   HS20M-500k-A/G/DXX	>GDN~'}^oz   500 kPa	MM+nE_9lV   60	z81`Lhg6   100	{7Ez7'SVV   140
/i~n**HeF?   HS20M-01M0-A/G/DXX	5geZ6]|   1.0 MPa	j|% C?N   60	d~d~Cd`V   100	@n=FSn6 c   140
VN4H+9E   HS20M-03M0-A/G/XX	( (mNB]sy   3.0 MPa	!P:~oo=   60	nG5:H.)   100	- zEQ/6   140
9%Ftln6   HS20M-10M0-A/GXX	hzk]kM/OC   10.0 MPa	@h\u}Ee   200	m K7egAo   250	l< |)LDq~   300
g60rm1b   HS20M-20M0-A08	Qgv-QcI{   20.0 MPa	v?1xYG@1   60	9s6d+HhM   100	| \JB/x   140
tTrue?   HS20M-40M0-A08	;fDs9=3#   40.0 MPa	*j= whdw%J   60	blB00    100	2}R)0][W   140
93N:?B9   Harsh Environmental Line, Piezoresistivechips for pressure measurements of 2 bar to 16 bar
;,]Wtmu)7   HE11C-200K-AXX	PT`gAUCw   200 kPa	RIl+QA   60	hI1}^;   100	of:xj$dQ_   140	X6@G)68   mV@5V
l<nL8/5{<   HE11C-400K-AXX	'%9e8C|   400 kPa	*e05{C:kS   60	]^^mJt.Iv   100	rOy-6og   140
J4ltHk.|   HE11C-800K-AXX	/e}NZo{)g   800 kPa	o;@T6-VH   60	@(A[H^E   100	f?A*g$v   140
"h}miVArS   HE11C-01M6-AXX	{)0"?$C_H   1.6 MPa	DrB PC@^   60	WY%'ps_]<   100	EWg\\90   140

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