新势力光电供应压力传感器芯片

新势力光电供应压力传感器芯片，采用高级电阻传感技术（STARe, Sensor Technology for AdvancedResistors），特点：稳定性高、适用于恶劣环境，该系列压力传感器芯片应用：腐蚀性、流动性、油性环境下的高精密压力传感测量，包括：汽车制造、工业、医疗、大型家电。 CXsi  
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A<&:-Zz   Type	> HL8hN'q'   Pressure	'\2lWR]ndd   Min	2.K"+%   Typ	Qp?n0WXZ   Max	'd"\h#   Unit
n>dM OQb   The Pressure sensor chips are based onthe STARe (Sensor Technology for Advanced Resistors)
d.7Xvx0Yww   Standard Line STARe, Piezoresistive chipsfor pressure measurements of 1 to 30 bar
995^[c1o6   SL21K-100k-A/GXX	2rw<]Ce   100 kPa	A_t<SG5   40	+"]'h~W   70	3o'SY@'W   130	?ExfxR!~   mV@5V
Ccocv>=Q&J   SL21K-250k-A/GXX	\4SFD3$&   250 kPa	'7F`qL\/#(   60	QsmG(1=   100	iDO~G($C   140
DOXRU5uP3   SL21K-500k-A/GXX	g(:y_EpmLH   500 kPa	;D/'7f7.}   60	*ihg'   100	VmTk4?V4   140
rrSA.J{   SL21K-01M0-A/GXX	YV 9*B   1.0 MPa	K@{jY\AZNx   60	qi7wr\XNW   100	zYOPE 6E   140
<MN+2^ed&   SL21K-03M0-A/GXX	$`'^&o;&f   3.0 MPa	0EXAdRR   60	H[x9 7r   100	5b B[o6+   140
q_f v1U3   Industrial Line STARe, Piezoresistivechips for pressure measurements of 100 mbar to 400 bar
r _r$nl   IL20L-10k0-GXX	|y%pP/;&!   10 kPa	zck)D^,aO   30	:;"3k64   60	!00%z   120	wH#k~`M   mV@5V
'q*1HNwGp   IL20L-35k0-A/GXX	2$NP46z}   35 kPa	p,D/ Pb8   40	A|>a Gy   100	kXX RMR   160
% wRJ"T`Tt   IL20M-03M0-A/GXX	Zt` ,DM   3.0 MPa	4 qW)R{%   60	F{T|lTl   100	dl{3fldb   140
g6W.Gl"5\w   IL20M-100k-A/GXX	sCb?TyN'n   100 kPa	_k+Bj.L   60	0t4i'??   100	A)7'\JK7b   140
f\(Kou$   IL20M-250k-A/GXX	\iVYhl   250 kPa	m@c2'*&Y   60	`ZefSmb   100	<1jiU%!w   140
9J ]LV'f7   IL20M-500k-A/GXX	h}`<pq   500 kPa	gieX`}   60	{{DW P-v4   100	sox90o 7   140
%)aDh }   IL20M-01M0-A/GXX	1g/mzC    1.0 MPa	5d4-95['_   60	2=3 iA09px   100	$9J"r9@@   140
P7 Y[?='v   IL20M-10M0-A/GXX	z(%Zji@!N   10.0 MPa	krl yEAK=   200	lp]O8^][&   250	5g&'n   300
IaF79}^   IL20M-40M0-AXX	L|H{;r'   40.0 MPa	7PvuKAv?k   230	H5 aUZ=   290	\m.{^Xd~   350
uIPR*9~6o   High Stability Line STARe, Piezoresistivechips for pressure measurements of 60 mbar to 400 bar
E|fPI u   HS20V-06k0-A/G/D05	WMC6dD_6e   6 kPa	3~S~)quwP   60	5 y~[2jB:   100	B=p'2lla   140	l:[=M:#p   mV@5V
Cv= 0& S.   HS20V-10k0-A/G/D05	qj/P4*6E   10 kPa	/;>EyWW   60	GS^4tmc   100	~.Gk:M   140
P"#^i<ut@T   HS20L-35k0-A/G/DXX	>pYgF=J   35 kPa	a&<<X:$Hy   60	`<Ftn   100	NdZ:  7   140
:=8vy   HS20L-100k-A/G/DXX	= G_6D   100 kPa	AuCVpDH   60	["7}u^z@<+   100	8;5/_BwMu   140
Owr`ip\   HS20M-250k-A/G/DXX	WV% KoM,%   250 kPa	~+g5?y   60	8,=$>@u   100	-Z@p    140
prWid3}   HS20M-500k-A/G/DXX	g=%&p?1@E   500 kPa	83n: h08   60	?b0\[   100	p)ONw "sb   140
68SM br   HS20M-01M0-A/G/DXX	AjS5   1.0 MPa	4j*}|@x   60	I5~DC   100	Q &J,"Vxw   140
O<hHo]jLF   HS20M-03M0-A/G/XX	y\[=#g1(@   3.0 MPa	Yc$|"to   60	|bk*Lgkzw   100	'tbb"M Ei4   140
RD4)NN6y5}   HS20M-10M0-A/GXX	d.Z]R&X08   10.0 MPa	zxh"@j$?   200	EI;\of2,   250	(gZ!o_   300
>g[W@FhT'k   HS20M-20M0-A08	a:fHTU=\p   20.0 MPa	y AWDk0bx   60	eZ!k'bS=   100	E;q woTmul   140
_=8+_OEk   HS20M-40M0-A08	w#e'K-=   40.0 MPa	HZ}*o%O   60	Zx_m?C_2_   100	{ZcZ\Q;6   140
q :bKT#\   Harsh Environmental Line, Piezoresistivechips for pressure measurements of 2 bar to 16 bar
^6+x0[13   HE11C-200K-AXX	0 OBkd   200 kPa	,B2-'O   60	%gaKnT(|r   100	e0L;V@R   140	V |AE~R^   mV@5V
"" U_|JH-   HE11C-400K-AXX	Cu:Zn%   400 kPa	Al|7Y/   60	#*!$!c{   100	6"7qZ q   140
L3AwL)I    HE11C-800K-AXX	 zjA/Z(   800 kPa	q8Dwu3D   60	]lUu%<-;   100	-e~Uu   140
akQH+j   HE11C-01M6-AXX	hptuTBD   1.6 MPa	q3F5\6aN   60	f[b YjIX   100	Y9;Mey*oW   140

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