新势力光电供应压力传感器芯片

新势力光电供应压力传感器芯片，采用高级电阻传感技术（STARe, Sensor Technology for AdvancedResistors），特点：稳定性高、适用于恶劣环境，该系列压力传感器芯片应用：腐蚀性、流动性、油性环境下的高精密压力传感测量，包括：汽车制造、工业、医疗、大型家电。 ~{NDtB)  
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\'p7,F{:>5   Type	@ics   Pressure	P2s0H+<   Min	n--`zx-['   Typ	3K0J6/mc   Max	"R30oA#m   Unit
Bf* F^   The Pressure sensor chips are based onthe STARe (Sensor Technology for Advanced Resistors)
X@D3   Standard Line STARe, Piezoresistive chipsfor pressure measurements of 1 to 30 bar
jgMWjM6.   SL21K-100k-A/GXX	?b7vc^E&   100 kPa	%vThbP#mR|   40	/KV@Ce\   70	GYs4#40   130	kU^@R<Fo   mV@5V
0y ;gi3W   SL21K-250k-A/GXX	~ZDdzp>   250 kPa	>qgBu_   60	:- 5Mn3*   100	4OIN@n*4   140
Anm5Cvt;i   SL21K-500k-A/GXX	3 4l=U?   500 kPa	dJ;;l7":~   60	n&Tv]-   100	4C[gW   140
W ][IHy<    SL21K-01M0-A/GXX	Ip0Zf?   1.0 MPa	EPg?jKZava   60	zld>o3K}   100	i@;a%$5   140
h7w<.zwu t   SL21K-03M0-A/GXX	TDseWdA   3.0 MPa	.5z|g@ 6   60	\ lKQ'_   100	jGWLYI=V2   140
G?g7G,|d   Industrial Line STARe, Piezoresistivechips for pressure measurements of 100 mbar to 400 bar
S:j0&*   IL20L-10k0-GXX	Xg)yz~Ug   10 kPa	g[n8N {s   30	IpP0|:}   60	[/kO>   120	V:+bq`   mV@5V
%2+]3h>g   IL20L-35k0-A/GXX	#}Cwn$   35 kPa	 (M =Br   40	2u: j6ic   100	M#p,Z F   160
RAxz+1JT   IL20M-03M0-A/GXX	g:)vthOs   3.0 MPa	/l`XJs   60	j AE0$u~.   100	%q HT!aP   140
5 6R,+sN   IL20M-100k-A/GXX	Rju8%FRO   100 kPa	#(H_w4   60	!RD,:\5V   100	LKZI@i)   140
&|4Uo5qS=Z   IL20M-250k-A/GXX	t<7WM'2<y   250 kPa	d7P @_jO6   60	"10VN*)J}   100	w~&]gyf   140
*X #e   IL20M-500k-A/GXX	m0,9yY::wj   500 kPa	MD)"r>k   60	X3nhqQTZ   100	-T8 gV1*(<   140
l.juys8s   IL20M-01M0-A/GXX	Uu+C<j&-   1.0 MPa	7y\g~?5N   60	x (`$D   100	\2,18E   140
aiHr2x 6   IL20M-10M0-A/GXX	m5pVt4   10.0 MPa	-Tx tX8v   200	=1VH5pVr}   250	* 2%e.d3"M   300
av?BpN"l   IL20M-40M0-AXX	[//f BO   40.0 MPa	A&F4;>dms   230	px x(BE   290	l'T0<   350
<^Tj}5)n   High Stability Line STARe, Piezoresistivechips for pressure measurements of 60 mbar to 400 bar
^Q>*f/.KN   HS20V-06k0-A/G/D05	ArYF\7P   6 kPa	Y,yaB)&Ih   60	o}A #-   100	~S6{VK.   140	Ak Tw?v'   mV@5V
PuaosMn(9   HS20V-10k0-A/G/D05	#pSOZX   10 kPa	uN 62>   60	JZzf,G:   100	!@{[I:5   140
3L?a4,Q"k}   HS20L-35k0-A/G/DXX	a7\L-T+   35 kPa	C4tl4df9   60	PEEY;x   100	AFTed?(   140
"ru1;I   HS20L-100k-A/G/DXX	MPn>&28"|K   100 kPa	o(/ia3   60	8 -;ZPhN&   100	qk,y|7p   140
F |81i$R   HS20M-250k-A/G/DXX	%E"/]!}3   250 kPa	SsX05>   60	[9om"'   100	F M"BTA:C   140
lO> 7`2x=F   HS20M-500k-A/G/DXX	-Y?(Zz_w   500 kPa	y=xe<#L   60	&6=ZT:.6Te   100	}]+}Tipd   140
K)UOx#xe1   HS20M-01M0-A/G/DXX	%@93^q[\2   1.0 MPa	Ko|xEz=   60	P=[x!}.I   100	jjT2k   140
dG>Wu o   HS20M-03M0-A/G/XX	OCO,- (   3.0 MPa	[e@OHQM   60	`OReSg 2   100	6XL9 qb~X   140
)|R0_9CLV   HS20M-10M0-A/GXX	2G5!u )   10.0 MPa	lkWeQ)V   200	7TPLVa=hO   250	*2 $m>N   300
iH}rI'U.   HS20M-20M0-A08	[I<'E LX   20.0 MPa	q\y#   60	T>Rf?%o   100	1qKxg   140
sFM>gG   HS20M-40M0-A08	S%s|P=u   40.0 MPa	H&=4y) /.   60	wQrPS   100	`)!2E6 =   140
r]//Q6|S   Harsh Environmental Line, Piezoresistivechips for pressure measurements of 2 bar to 16 bar
_B7?C:8Q-   HE11C-200K-AXX	f.84=epv   200 kPa	p9}c6{Wp   60	.'{6u;8   100	-kri3?Y,   140	(VI* c!N   mV@5V
($ B]9*   HE11C-400K-AXX	6dR-HhF   400 kPa	Nw$[a$^n   60	OK2/k_jXN'   100	KY mWfM3^   140
C`~4q<W'   HE11C-800K-AXX	2:HP5   800 kPa	A"<)(M+kG   60	dYew7   100	z'}=A   140
nK%/tdq   HE11C-01M6-AXX	];{ l$-$$   1.6 MPa	sa gBmA~   60	i_'R"ob{S   100	&~JfDe9IS   140

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