新势力光电供应压力传感器芯片

新势力光电供应压力传感器芯片，采用高级电阻传感技术（STARe, Sensor Technology for AdvancedResistors），特点：稳定性高、适用于恶劣环境，该系列压力传感器芯片应用：腐蚀性、流动性、油性环境下的高精密压力传感测量，包括：汽车制造、工业、医疗、大型家电。 [Y.3miE  
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tUl#sqN_{   Type	wwVK15t   Pressure	U< fe 'd   Min	A:F*Y%ZW   Typ	jdV E/5   Max	^2OBc   Unit
C5#3c yf*B   The Pressure sensor chips are based onthe STARe (Sensor Technology for Advanced Resistors)
zh)qo   Standard Line STARe, Piezoresistive chipsfor pressure measurements of 1 to 30 bar
B*E:?4(<P   SL21K-100k-A/GXX	QbqEe/*$_   100 kPa	}s{RW<A   40	GQ ZEMy7   70	QkUq%}_0   130	/\_`Pkd3m   mV@5V
:9q=o|T6D   SL21K-250k-A/GXX	O=8:K'   250 kPa	hv te)   60	]N}80*Rl   100	U'@eUY(Ov$   140
XHcT7}]   SL21K-500k-A/GXX	Q+gd|^Vc9   500 kPa	xJrRJwL   60	(1gfb*L   100	.ICGGC`O   140
Q~<$'j   SL21K-01M0-A/GXX	-qz;   1.0 MPa	+CtsD9PA   60	"jly[M}C   100	L31B:t^   140
\Fj$^I >C   SL21K-03M0-A/GXX	:Lqz`   3.0 MPa	#rM/   60	Wfgs[   100	Au,xIe!t   140
5hak'#2   Industrial Line STARe, Piezoresistivechips for pressure measurements of 100 mbar to 400 bar
+xMK.*H]W   IL20L-10k0-GXX	XzGPBi   10 kPa	Q9=vgOW+   30	j+NOT`&   60	T:IKyb   120	bS_fWD-   mV@5V
yg\bCvL&   IL20L-35k0-A/GXX	9{\eE]0    35 kPa	#FKo:id`K   40	#n5q$   100	F-g(Hk|v   160
[3h~y7   IL20M-03M0-A/GXX	pB;)Hii\   3.0 MPa	X>l   60	/M(Fu V   100	*&{M,   140
R4v)}`x   IL20M-100k-A/GXX	CJ0j2e/   100 kPa	zk= 3L} C   60	*.4;7#   100	bSsX)wHm   140
m,',luQ   IL20M-250k-A/GXX	RGh`=D/yE   250 kPa	"&Ym(P   60	"?a(JC   100	/Hb'3,jN   140
tep_g4CQR_   IL20M-500k-A/GXX	,9Y{x   500 kPa	)$V}tr!   60	6U)Lhf\'o   100	4L\bT;dQ|.   140
!^BXai/   IL20M-01M0-A/GXX	aGvD   1.0 MPa	kuq3QW<   60	xo/[,rR   100	}XVz?6    140
.6S]\dp7~   IL20M-10M0-A/GXX	}2 zJ8A9-   10.0 MPa	`r;e\Cp   200	P[-2^1P "   250	rf1Us2vp   300
Wo=Q7~   IL20M-40M0-AXX	gn"_()8cT   40.0 MPa	o mstJ9   230	99 /fI   290	fdP[{.$?(   350
x"0*U9f   High Stability Line STARe, Piezoresistivechips for pressure measurements of 60 mbar to 400 bar
A;Rr#q<   HS20V-06k0-A/G/D05	2}:scag   6 kPa	L>Bf}^   60	XmN3[j   100	)TV4OT#   140	)? WiO}"   mV@5V
0kP,Z j<   HS20V-10k0-A/G/D05	`vWFTv   10 kPa	vQCRs!A   60	"QA <5P   100	kK+<n8R2   140
aR30wxW&)   HS20L-35k0-A/G/DXX	?z>Zs D   35 kPa	Gr6XqO_   60	bj^YB,iSM   100	ukBj@.~   140
:FOMRrf7.   HS20L-100k-A/G/DXX	uTY5.8   100 kPa	1MV\Jm   60	lgp-/O"T   100	odAeBQy   140
X&EcQ   HS20M-250k-A/G/DXX	lAuI?/E   250 kPa	l(|@ dp   60	Z'iXuI49   100	>e n,MT|   140
WMfu5x7e4   HS20M-500k-A/G/DXX	;\yY*   500 kPa	T1yJp$yD"   60	+Mth+qgw   100	7@"J&><w!   140
gd3~R+Kd   HS20M-01M0-A/G/DXX	S;[g0j   1.0 MPa	m/l#hp+   60	+BcJHNIB   100	yZFm<_9>   140
jeM %XI   HS20M-03M0-A/G/XX	 J5PXmL   3.0 MPa	3D>syf   60	F.ml]k&(m   100	iW\cLp "   140
C8i6ESmU   HS20M-10M0-A/GXX	bp Q/#\Z   10.0 MPa	I\J^@& JE   200	@KRr$k   250	Sgp$B:   300
!ckm NE0   HS20M-20M0-A08	Ig*68M<   20.0 MPa	G/ToiUY   60	S(xlN7=   100	:db:|=#T   140
h ,;f6   HS20M-40M0-A08	'B&gr}@4O=   40.0 MPa	o>lk+Q#L @   60	`0a=A#]1o   100	Ng=XH"ce~   140
R5=2EwrGP   Harsh Environmental Line, Piezoresistivechips for pressure measurements of 2 bar to 16 bar
WO{V,<;   HE11C-200K-AXX	E _d^&{j   200 kPa	w yi n   60	6}bUX_!&s   100	D0Cs g39   140	3B|?{U~   mV@5V
uN1(l}z$   HE11C-400K-AXX	ir^%9amh   400 kPa	fW^\G2Fk   60	;ew j   100	Cz@[l=-T7   140
zFVNb   HE11C-800K-AXX	Q _Yl:c   800 kPa	y;W|)   60	*3 .+19Q   100	=ZdP0l+V=k   140
<n+?7`d,   HE11C-01M6-AXX	f4F13n_0X   1.6 MPa	5P{PBd}glp   60	~"-+BG(5   100	~RdJP'YF-   140

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