新势力光电供应雪崩二极管

发布：newopto 2014-11-13 11:40 阅读：1576
新势力光电供应雪崩二极管（APD，Avalanchephotodiodes），是一种内部增益机制的光电二极管：蓝光增强型、红光增强型、红外增强型（900nm、1064nm）。该系列雪崩二极管应用广泛，包括：安检设备、激光测距、运动控制、分析仪器、生物医疗、光通信、军事、航空航天、光通讯。备注：如果采购数量10片以上，新势力光电提供配套的驱动电路模块。 =o+))R4  
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Series 11: Blue sensitivity enhanced (forbiomedical applications)
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Order #		 ]o\y(!  
Type		 JOJ? .H&su  
Active Area		 f.&Y_G3a<  
Dark Current		 6v}WdK  
Rise Time
QGV~Y+  
Chip		 5KFd/9  
Package		 b_T?jCyW  
Size		 SmYY){AQ/  
Area		 = A;B-_c  
M=100		 QBiLH]qa  
410nm 50Ω
, *A',  
mm		 ONw;NaE,  
mm2		 GP\Pk/E  
nA		 79 ZBVe(}  
ns
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500970		 *PjW,   
AD800-11		 C4~`3Mk  
TO52S1		 RZeU{u<O  
Ø0.8		 4_w+NI,;  
0.5		 ;f7;U=gl,  
1		 Z;#Ei.7p|  
1
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500967		 Y|iJO>_Uu=  
AD1900-11		 GKNH{|B$D  
TO5i		 |Skk1 #  
Ø1.95		 a}+7MEUmZ/  
3		 UldG0+1d  
5		 Xbb('MoI63  
2
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Series 12: Red sensitivity enhanced(cut-off frequency up to 3 GHz)
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Order #		 @P^8?!i+  
Type		 nsJN)Pt  
Active Area		 FV&&  
Dark Current		 pGy(JvMw"  
Rise Time
K~_[[)14b  
Chip		 4u zyU_  
Package		 0 pH qNlb  
Size		 Dm1;mRS+  
Area		 +Zx+DW cq  
660nm M=100		 iG1vy'J#o  
660nm 50Ω
0~\Dd0W/:`  
mm		 _tg&_P+kV  
mm2		 ?[\(i)]  
A/W		 &r6VF/  
GHz
0.+"K}  
501828		 s wdW70  
AD100-12		 MEQ :[;1  
LCC6.1		 #KonVM(`  
Ø0.1		 DdTTWp/  
0.008		 hN6j5.x%  
50		 {@u;F2?  
typ.3, min.2
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501829		 n:GK0wu.s  
AD100-12		 9IKFrCO9,  
LCC6.1f		 @' DfNka  
Ø0.1		 *sqq]uD  
0.008		 Nt^R~#8hF>  
44		 bGvALz'  
typ.3, min.2
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501831		 b:Lp`8Du  
AD100-12		 [e )j,Q1  
TO52S1		 bmEo5f~C!  
Ø0.1		 Zi=Nr3b  
0.008		 M?4)U"_VE  
50		 )k0P' zGb  
typ.3, min.2
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501157		 ?Ovl(4VG  
AD230-12		 &j,rq?eh$  
LCC6.1		 (z0S5#g ,x  
Ø0.23		 :0.Z/s -  
0.042		 bIP{DxKS  
50		 #]i*u1  
typ.3, min.2
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501156		 aD,sx#g0  
AD230-12		 Us'm9 J  
LCC6.1f		 Vh:%e24Z  
Ø0.23		 @eN x:}  
0.042		 ]&1Kz 2/  
44		 mu2r#I  
typ.3, min.2
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501820		 "_JGe#=  
AD230-12		 FW:x XK  
LCC6.1f		 F kp;G  
Ø0.23		 ;}{%|UAsx  
0.042		 | eIN<RY5  
44		 (b Q1,y  
typ.3, min.2
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501162		 p6]4YGw*^  
AD230-12		 <k'=_mC_  
TO52S1		 + ?n81|7`  
Ø0.23		 A1:<-TF6^p  
0.042		 8/*q#j  
50		 ]lzt "[  
typ.3, min.2
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501155		 &'4id[$9  
AD500-12		 rl9YB %P  
LCC6.1		 ywpk\  
Ø0.5		 L,| 60*  
0.196		 [!4p5;  
50		 /c~z(wv  
typ.3, min.2
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501154		 j`A%(()d  
AD500-12		 _6&x$ *O  
LCC6.1f		 [k.|iCD  
Ø0.5		 9hEIf,\  
0.196		 @Hj5ZJ 3  
44		 ./LD  
typ.3, min.2
|ul25/B B  
501819		 3>%rm%ffE  
AD500-12		 hex:e2x  
LCC6.1f		 .v%H%z~Rl#  
Ø0.5		 ^4_)a0Kcm,  
0.196		 1u7Kc'.xc  
44		 mL`,v WL/`  
typ.3, min.2
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501163		 O^48c$Apv  
AD500-12		 :}0y[qc3  
TO52S1		 9l9 nT  
Ø0.5		 yTwv2l;U  
0.196		 b[Sd$ACd  
50		 Vu0jNKUV  
typ.3, min.2
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Series 8: Optimized for high cut-offfrequencies-850 nm (optimized for high speeds)
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Order #		 bsy\L|wd  
Type		 [ps5;  
Active Area		 ]7n+|@3x  
Dark Current		 ,j^ /~  
Rise Time
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Chip		 vO!p8r F  
Package		 ZIQy}b'  
Size		 L5! aLv#  
Area		 ;@GlJ '$;  
M=100		 v{ Md4 p  
M=100 20V 50Ω
^{nf0)56c  
mm		 AJt *48H*G  
mm2		 "2q}G16K  
nA		 /) Bk r/  
ns
|u8IQR'B  
501810		 @9g$+_"ZT  
AD100-8		 J3gJSRT@P  
LCC6.1		 Meo(|U  
Ø0.1		 ;75K:_  
0.008		 Aq%TZ_m  
0.05		 rk:^^r>5Qi  
<0.18
Z .VIb|  
501811		 }#5V t  
AD100-8		 >%5Ld`c:SD  
LCC6.1f		 G=Hvh=K(  
Ø0.1		 E|Mu1I]e  
0.008		 , f{<  
0.05		 fVx<f.xuW  
<0.18
;rZR9fR  
501812		 Aon 3G  
AD100-8		 ]W39HL  
LCC6.1f		 HZC^Q7]hy  
Ø0.1		 p A7&  
0.008		 >Q#h,x~vu  
0.05		 7p*PDoM6`  
<0.18
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500011		 3*x_S"h  
AD100-8		 &7_xr.c7  
TO52S1		 K8M[xaI@  
Ø0.1		 69ZGdN  
0.008		 %^tKt  
0.05		 ]R[j ]E.  
<0.18
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501171		 )(yD"]co  
AD100-8		 zLEl/yPE  
TO52S3		 ;Gixu9u'  
Ø0.1		 jez=q  
0.008		 TLbnG$VQS  
0.05		 :b t;DJ@  
<0.18
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501078		 6HocF/Ye  
AD230-8		 4.Luy  
LCC6.1		 f_v@.vnn.  
Ø0.23		 8h"Val|qP  
0.04		 WjLy7&  
0.3		 ]S!:p>R  
0.18
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501079		 Q(v*I&k  
AD230-8		 d[K71  
LCC6.1f		 0?c2=Y   
Ø0.23		 Bv-|#sdxm  
0.04		 iQs^2z#Bd  
0.3		 5B6twn~[  
0.18
b7-M'-Km0_  
501805		 2OT RP4U  
AD230-8		 -u+@5K;^Y  
LCC6.1f		 jlaU3qXL  
Ø0.23		 Xa o*h(Q@L  
0.04		 b,C2(?hg  
0.3		 V+`gkWe/  
0.18
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500019		 u NmbR8Mx  
AD230-8		 |q| ?y`X4/  
TO52S1		 _[%2QwAUj*  
Ø0.23		 b;Nm$`2  
0.04		 c,@&Z#IZ`  
0.3		 Rhw- 49AWx  
0.18
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500022		 \vg(@)$q   
AD230-8		 @nWhUH%  
TO52S3		  Y7*8 A,  
Ø0.23		 *LuR <V  
0.04		 au=A+  
0.3		 wPr9N}rf  
0.18
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501496		 pg<m0g@W*;  
AD230-8		 HpLCOY1-  
ODFN2x2		 Kd='l~rby  
Ø0.23		 4Fu:ov ]M  
0.04		 _PPZ!r(  
0.3		 .4CCR[Het  
0.18
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501077		 ov3FKMG?  
AD500-8		 }xx"  
LCC6.1		 "mk@p=d  
Ø0.5		 x."R_>  
0.2		 ;- 0 d2Z  
0.5		 gWk?g^KJL  
0.35
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501076		 4 H<.  
AD500-8		 {UeS_O>(  
LCC6.1f		  _BFDsQ  
Ø0.5		 xdLMy#U2  
0.2		 P^3`znq{  
0.5		 ;{L~|q J  
0.35
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501809		 9ZJn 8ki  
AD500-8		 -s3q(SH  
LCC6.1f		 APgjT' ;P^  
Ø0.5		 H^3f!\MC;o  
0.2		 #zf,%IYF  
0.5		 Q6 oM$qiM  
0.35
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500030		 :~^_*:  
AD500-8		 d6+$[4w  
TO52S1		 n 9>**&5L  
Ø0.5		 W(jOD,QMB  
0.2		 fzdWM:g  
0.5		 ""f'L,`{.  
0.35
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500305		 u~xfI[8C  
AD500-8		 <da-iY\5  
TO52S2		 Hk8lHja+\  
Ø0.5		 c 8t  
0.2		 P#!^9)3  
0.5		 {Mpx33  
0.35
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500155		 6!Q,X Hs  
AD500-8		 JT p+&NS  
TO52S3		 g:fkM{"{  
Ø0.5		 un F=";9H  
0.2		 Nov)'2g7G  
0.5		 .fgVzDR|+  
0.35
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500947		 29HyeLB@  
AD800-8		  ID]E3K  
TO52S1		 I}sb0 Q&  
Ø0.8		 GY t|[GC  
0.5		 Kh8  
2		 /jl/SV+  
0.7
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501117		 HfPu~P  
AD1100-8		 q4T98s2J  
TO52S1		 I=pFGU  
Ø1.13		 50CjH"3PZ`  
1		 ,hOi5,|?L  
4-6		 N mA6L+  
1
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500015		 P,rD{ 0~  
AD1900-8		 eakQZ-Q  
TO5i		 +>ld  
Ø1.95		 K=Z.<f  
3		 4;2  
15		 7O-fc1OTv  
1.4
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501194		 b~*CJ8Ad  
AD3000-8		 3UX6Y]E3  
TO5i		 )A$xt)}P!{  
Ø3		 x }@P  
7.07		 I8/tD|3  
30		 W)<t7q+  
2
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500160		 []$L"?]0uk  
AD5000-8		 TT oW>RP#  
TO8i		 8shx7"  
Ø5		 sDB,+1"Y$  
19.63		 f28bBuv1?  
60		 (]` rri*^  
3
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500002		 xE rAs}|  
AD230-8-2.3G		 FeNNzV=  
TO5		 Nt|Fw$3*5{  
AD230-8-2.3GTO5 is a high frequency optical data receiver comprising an Avalanche SiliconPhotodiode and a transimpedance amplifier in a hermetically sealed TO5package.
RF= $SMTk  
500003		 _fccZf(yC.  
AD500-8-1.3G		 h=4 GSU  
TO5		 CK#i 6!~r  
AD500-8-1.3GTO5 is a high frequency optical data receiver comprising an Avalanche SiliconPhotodiode and a transimpedance amplifier in a hermetically sealed TO5package.
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Series 9: NIR sensitivity enhanced-900nm(specifically for LIDAR and laser rangefinders)
uO)vGzt3^x  
Order #		 $)eS Gslz  
Type		 N 9s+Tm  
Active Area		 0DFVB%JdI  
Dark Current		 [V_+/[AA)  
Rise Time
i<(~J4}b  
Chip		 F!fsW9  
Package		 Yd(<;JKF[  
Size		 ,n2"N5{jw  
Area		 * ,zrg%8  
M=100		 &smZ;yb|'h  
M=100
0g;)je2_2?  
mm		 ?r{hrAx  
mm2		 `2/V.REX$h  
nA		 $AizKiV  
ns
g;Zy3   
501815		 LJ K0WWch  
AD100-9		 !;4Hh)2  
LCC6.1		 <kk!nsI  
Ø0.1		 s\< @v7A  
0.008		 Q/q>mN"#1  
0.1		 ' &3,qT  
<0.5
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501816		 R9(Yi<CC  
AD100-9		 qi ">AQpp  
LCC6.1f		 PuhvJHT  
Ø0.1		 :5F(,Z_  
0.008		 ==BOW\  
0.1		 vOLa.%X]h  
<0.5
kZ PL$ \/A  
501123		 sm;kg=  
AD230-9		 +* j8[sz  
LCC6.1		 ?\)h2oi!F5  
Ø0.23		 1:r#m- \  
0.04		 M~n./wyC  
0.5		 G{{M' 1  
0.5
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501817		 tLxeq?Oo]  
AD230-9		 t 4VeXp6  
LCC6.1f		 7<Qmpcp =  
Ø0.23		 xI.0m  
0.04		 &8Z .m,s]  
0.5		 V/:2xT  
0.5
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500020		 $$uMu{?0i  
AD230-9		 2[;~@n1P  
TO52S1		 <s7cCpUFP  
Ø0.23		 oh@Ha?  
0.04		 !Qf*d;wxn(  
0.5		 =6+99<G|%M  
0.5
4UUbX  
501265		 yn"4qC#Z  
AD230-9		 AW E ab  
TO52S1F2		 $7ix(WL<%  
Ø0.23		 }'faf{W  
0.04		 3m9b  
0.5		 i(OeE"YA  
0.5
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500023		 qGX#(,E9;  
AD230-9		 ZzjCS2U  
TO52S3		 4 R(m$!E!  
Ø0.23		 gWoUE7.3`  
0.04		 OScqf]H  
0.5		 .ANR|G  
0.5
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501122		 "<{|ni}  
AD500-9		 @g4o8nH}  
LCC6.1		 3!osQ1  
Ø0.5		 ~%C F3?e6  
0.2		 Yb4ku7}  
0.8		 p:K%-^  
0.55
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501818		 k& +gkJm  
AD500-9		 .c ~z^6x  
LCC6.1f		 D7T|K :F)  
Ø0.5		 AS@(]T#R  
0.2		 "M!m-]  
0.8		 >;' 0ymG.`  
0.55
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500031		 $A-X3d;'\/  
AD500-9		 @4D{lb"{  
TO52S1		 Z/:F)c,x  
Ø0.5		 $+_1F`  
0.2		 7s#8-i  
0.8		 N%xCyZ  
0.55
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500590		 j6Sg~nRh  
AD500-9		 e,VF;Br  
TO52S1F2		 5h`LWA B  
Ø0.5		 @+H0D"  
0.2		 k&%i+5X  
0.8		 9Dgs A`{$  
0.55
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500306		 `=P_ed%&'  
AD500-9		 op5 `#{  
TO52S2		  \20} /&  
Ø0.5		 Zfcf?&><  
0.2		 A8{ xZsH  
0.8		 ;Tp9)UP)  
0.55
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500156		 WV.hQX9P  
AD500-9		 $x+7.%1m)~  
TO52S3		 )=d)j^ t9  
Ø0.5		 )!\6 "{  
0.2		 8K-P]]  
0.8		  <{Y3}Q  
0.55
SFd_k9  
501196		 f"P866@oWn  
AD800-9		 QfAmGDaYQ  
TO52S1		 1' U  
Ø0.8		 ?%UiW7}j';  
0.5		 wCg7JW#  
2		 XLCqB|8`V  
0.9
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501197		 n}IGxum8`  
AD1100-9		 >Ti%Th,  
TO52S1		 7Tdx*1 U  
Ø1.13		 y zp#  
1		 &RARK8 ^  
4		 8I RKCuV  
1.3
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501208		 qz]qG=wmL  
AD1500-9		 U\H[.qY-  
TO5i		 IRx% L?  
Ø1.5		 ' QG`^@Z  
1.77		 6,q_ M(;c  
2		 _$c o Y  
2
&d2L9kTk  
501198		 x0J W  
AD3000-9		 aYT!xdCI  
TO5i		 7 uL.=th'  
Ø3		 zHZfp_I  
7.07		 SDO:Gma  
30		 7)jN:+4N  
2
^C ~Ryw7  
500161		 F+(S-Qk1  
AD5000-9		 mu{C>w_Rz  
TO8i		 \ opM}qZ  
Ø5		 7WS$fUBi  
19.63		 5tpC$4m  
60		  yP+<kv4  
3
2} pZyS  
500756		 JS^DyBXc  
AD230-9-400M		 r YKGX?y  
TO5		 ydYsmTr  
AD230-9-400M-TO5 is a high frequency optical data receivercomprising an Avalanche Silicon Photodiode and a transimpedance amplifier ina hermetically sealed TO-5 package.
InbB2l4G  
500490		 4jebx jZ  
AD500-9-400M		 hQ<7k'V  
TO5		 tUx H 6IS  
AD500-9-400M-TO5 is a high frequency optical data receivercomprising an Avalanche Silicon Photodiode and a transimpedance amplifier ina hermetically sealed TO-5 package.
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Multi-Element Array
w=;>  
501099		 uc@4fn  
8AA0.4-9		 U52 V1b  
SOJ22GL		 dV38-IfGkl  
APD Array 8 Elements, QE>80% at760-910nm with NTC
SkmTW@v  
501098		 nL=+`aq_  
16AA0.13-9		 dB6 ,pY(  
SOJ22GL		 X;W0r5T  
APD Array 16 Elements, QE>80% at760-910nm with NTC
:FI D ,  
500038		 iKrk?B<  
16AA0.13-9		 U~?VN!<x[  
DIL18		 ljZRz$y  
APD Array 16 Elements, QE>80% at760-910nm
V/2NIh  
501097		 ,Kj>F2{  
16AA0.4-9		 gjG SI'M0B  
SOJ22GL		 GxD`M2  
APD Array 16 Elements, QE>80% at760-910nm
(@XQ]S}L  
50130802		 @,.D]43  
25AA0.04-9		 GD.Ss9_h1  
BGA		 AE~a=e\x  
APD Array 25 (5×5) elements, QE>80% at760-910nm with PTC
qH4|k 2Lm  
50130802		 stajTN*J  
25AA0.16-9		 o{#aF=`{  
BGA		 v(yJGEf0  
APD Array 25 (5×5) elements, QE>80% at760-910nm with PTC
9zqo!&  
50130702		 Cwls e-  
64AA0.04-9		 2_HIn  
BGA		 3S+9LOrhY  
APD Array 64 (8×8) elements, QE>80% at760-910nm with PTC
>eG<N@13p  
501207		 BZQ}c<Nl  
QA4000-9		 bKsjbYuo  
TO8Si		 3f^Pr  
Quadrant Avalanche Photodiode, QE>80%at 760-910nm
J";N^OR{A%  
Series 10: NIR sensitivity enhanced -1064nm (specifically for laser rangefinders, targeting systems or anyapplications using YAG lasers or similar NIR radiation sources)
hJ`Gu7  
Order #		 <">epbV6  
Type		 ;]grbqXVE  
Active Area		 Fdhgm{Y2s  
Dark Current		 zJy=1r  
Rise Time
8k-]u3  
Chip		 E& 6I`8  
Package		 [nig^8  
Size		 \O "`o4  
Area		 VrPsy) J68  
M=100		 $k0(iFzR1  
M=100 1064nm
hJxL|5Uo  
mm		 LJ <pE;`d  
mm2		 E} XmZxHV  
nA		 .8s-)I  
ns
1!(lpp  
500953		 Wj,s/Yr:  
AD500-10		 Sk+XBX(}  
TO5i		 M;<!C%K>  
Ø0.5		 ~;CNWJtcf(  
0.2		 -}UY2)  
1.5		 iS+"Jsz  
4
F|> 3gW  
501233		 ULz<P  
AD800-10		 %k4Qx5`?d  
TO5i		 A{q%sp:3~  
Ø0.8		 k)7i^ 1U  
0.5		 BM?!?  
3		 'k\j[fk/K  
5
'(B -{}l  
500883		 ZH\t0YhrVe  
AD1500-10		 td7(444]  
TO5i		 %dPk,Ylz  
Ø1.5		 N8Rq7i3F?a  
1.77		 rZdOU?U  
7		 2LUsqL\m}.  
5
! 1I# L!9  
50123401		 ;=0mL,  
AD4000-10		 G?$o+Y'F  
TO8Si		 L>IP!.J]?  
Ø4		 nm#23@uZ4K  
12.56		 hQx*#:ns  
50		  :'F,l:  
6
9dA+#;?  
501387		 Rs"=o>Qu  
AD800-10		 C8|Ls(4Ck  
TO8S		 E{ c+`>CY  
High speed, high gain, low noise, lowpower consumption hybrid (AD800-10+TIA)
SeXgBbGAne  
Multi-Element Array
x+4K,r;  
501174		 UAXp;W`  
QA4000-10		 95#]6*#[4!  
TO8Si		 b>p_w%d[[J  
Quadrant Avalanche Photodiode, High QE at850-1070nm
lfM vNv  
=nCA=-Jv  
如有需要，可直接联系我们，也可以登录官网查找所需要的产品： DDR4h"Y  
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