新势力光电供应雪崩二极管

发布：newopto 2014-11-13 11:40 阅读：1560
新势力光电供应雪崩二极管（APD，Avalanchephotodiodes），是一种内部增益机制的光电二极管：蓝光增强型、红光增强型、红外增强型（900nm、1064nm）。该系列雪崩二极管应用广泛，包括：安检设备、激光测距、运动控制、分析仪器、生物医疗、光通信、军事、航空航天、光通讯。备注：如果采购数量10片以上，新势力光电提供配套的驱动电路模块。 >\oJ&gdc  
7D~O/#dcc  
Series 11: Blue sensitivity enhanced (forbiomedical applications)
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Order #		 *I1W+W`G  
Type		 >8fz ?A  
Active Area		 >0+|0ba  
Dark Current		 A"3&EuvU  
Rise Time
[oN> :  
Chip		 $\@ V4  
Package		 Q]g4gj  
Size		 >]Yha}6h  
Area		 w{O3P"N2  
M=100		 @)'@LF1Z  
410nm 50Ω
gsR9M%mv  
mm		 &eS70hq  
mm2		 *_K-T#  
nA		 &@iF!D\u  
ns
pr,1Wp0l  
500970		 |{LaZXU&  
AD800-11		 &?Z)V-1H  
TO52S1		 ?G>TaTiK#  
Ø0.8		 E!~2\qKT  
0.5		 <W%Z_d&Xv  
1		 -GWzMBS S  
1
`FB?cPR  
500967		 MH8%-UV  
AD1900-11		 x)wt.T?eL  
TO5i		 )"Br,uIv:/  
Ø1.95		 8EEQV}4  
3		 R}6la.mQ  
5		 xPJJ !mY  
2
m'"VuH?^  
Series 12: Red sensitivity enhanced(cut-off frequency up to 3 GHz)
A-Pwi.$  
Order #		 0t[mhmSU,  
Type		 M-K@n$k   
Active Area		 5a|m}2IX  
Dark Current		 !=:MG#p  
Rise Time
I_I;.Ik  
Chip		 W (c\$2`  
Package		 ;xtb2c8HT  
Size		 &r5%WRzpYT  
Area		 -x\l<\*  
660nm M=100		 Hg_ XD,  
660nm 50Ω
RkP|_Bf8)  
mm		 `"mK\M  
mm2		 }J'w z;t1  
A/W		 4x?u5L 9o  
GHz
{#M{~  
501828		 ];~[Olc  
AD100-12		 C{,] 1X6g  
LCC6.1		 mf_'| WDs  
Ø0.1		 UuC"-$:  
0.008		 (ai-n,y  
50		 ]sP9!hup  
typ.3, min.2
'"\Mjz)/  
501829		 /~huTKA}  
AD100-12		 il%tu<E#J~  
LCC6.1f		 '<D}5u7 2  
Ø0.1		 cE>/iZc  
0.008		 9,>Y  
44		 )mVYqlU"  
typ.3, min.2
-?`l<y(  
501831		 U9sub6w6  
AD100-12		 s:F+bG}|  
TO52S1		 9+Bq00-Z$  
Ø0.1		  !Ocg  
0.008		 @wJa33QT  
50		 f8jz49C  
typ.3, min.2
6-}e-H  
501157		 }eFUw  
AD230-12		 Ki;5 =)  
LCC6.1		 GJfNO-  
Ø0.23		 Riuv@i^6K  
0.042		 ,5uDEXpt{  
50		 FGhrf  
typ.3, min.2
d6 EJn/  
501156		 B_jI!i{N%o  
AD230-12		 f|1FqL+T]  
LCC6.1f		 BW=6gZ_  
Ø0.23		 QnLg P7Ft  
0.042		 &YP>" <  
44		 l<_mag/j9o  
typ.3, min.2
_?LI0iIFx  
501820		 u`,R0=<4  
AD230-12		 "dOY_@kg  
LCC6.1f		 zb,`K*Z{  
Ø0.23		 3"D00~  
0.042		 ~M1%,]  
44		 Yx c >+mx  
typ.3, min.2
y+R$pzX  
501162		 m?G+#k;K  
AD230-12		 t1s@Ub5);I  
TO52S1		 W?Abx  
Ø0.23		 &Sp:?I-  
0.042		 ~x|Sv4M  
50		 )WJI=jl  
typ.3, min.2
4>`w9   
501155		 ~2ei+#d!^  
AD500-12		 [/j-d  
LCC6.1		 cNC BbOMr  
Ø0.5		 )PNk O3  
0.196		 PP|xIAc  
50		 j'cCX[i  
typ.3, min.2
:8T@96]P  
501154		 '-TFrNO;h  
AD500-12		 S]@iS[|?  
LCC6.1f		 v3#47F)  
Ø0.5		 I@v.Hqg+7  
0.196		 1&E&8In]$r  
44		 8#-}3~l[  
typ.3, min.2
:\We =oX  
501819		 <rxem(PPu  
AD500-12		 >pHvBFa3G  
LCC6.1f		 .gg0:  
Ø0.5		 ;%9ZL[-  
0.196		 _fw'c*j  
44		 #2,L)E\G8e  
typ.3, min.2
jZ yh   
501163		 ]2 N';(R  
AD500-12		 X~!?t }  
TO52S1		 Yb/^Qk59  
Ø0.5		 \?}.+v  
0.196		 c~;.m<yrf  
50		 w` :KexD+  
typ.3, min.2
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Series 8: Optimized for high cut-offfrequencies-850 nm (optimized for high speeds)
q\Z1-sl~s  
Order #		 :D-vE7  
Type		 \/zS@fz  
Active Area		 l>q.BG  
Dark Current		 kp"cHJNx  
Rise Time
FiL JF!  
Chip		 -2 ?fg   
Package		 ypVr"fWB  
Size		 2V 'Tt3  
Area		 |3@]5f&  
M=100		 _: x$"i  
M=100 20V 50Ω
Hq8.O/Y"=  
mm		 ^jA}*YP  
mm2		 L.[2l Q  
nA		 ' 'N@ <|  
ns
vkLG<Y  
501810		 bN)?szh&Y  
AD100-8		 1Btf)y'  
LCC6.1		 #UIg<:  
Ø0.1		 so?1lG  
0.008		 iqYc&}k,  
0.05		 e{/\znBS%  
<0.18
7ac3N  
501811		 E}+A)7mA  
AD100-8		 xa:P(x3[  
LCC6.1f		 X)S4rW%  
Ø0.1		 }_x oT9HUr  
0.008		 = %m/  
0.05		 0Jrk(k!  
<0.18
M"V@>E\L  
501812		 X:5*LB\/v  
AD100-8		 !JA63  
LCC6.1f		 %iNDRLR%I  
Ø0.1		 C+j+q648>  
0.008		 up?8Pq*  
0.05		 |v&&%>A2  
<0.18
`P~RG.HO  
500011		 ),eiJblH  
AD100-8		 Fk:(% ci  
TO52S1		 B~IOM  
Ø0.1		 fA^O  
0.008		 R<)uvW_@  
0.05		 `JCC-\9T_  
<0.18
}PJ:9<G y  
501171		 :|g{ gi  
AD100-8		 as8<c4:v  
TO52S3		 mB\|<2  
Ø0.1		 y;H 3g#  
0.008		 _ U\vHa$#  
0.05		 ZmDr$iU~  
<0.18
g;pymz  
501078		 Rzk JS9)m  
AD230-8		 Jor?;qo3  
LCC6.1		 4^5s\ f B  
Ø0.23		 6Jm4?ex  
0.04		 T+fU +GLD  
0.3		 Q=[&~^ Y)  
0.18
mAMKCxz,  
501079		 =Ev } v  
AD230-8		 %rsW:nl  
LCC6.1f		 K67x.PZ  
Ø0.23		 wU3Q  
0.04		 7iJl W&W  
0.3		 8c#*T%Vf  
0.18
n| %{R|s  
501805		 V2*b f`/V  
AD230-8		 Hd:ZE::Q'#  
LCC6.1f		 LX8vVj8K  
Ø0.23		 %$08*bAtB7  
0.04		 l\eq/yg_  
0.3		 vgV0a{u"  
0.18
X qh+  
500019		 2Y,s58F  
AD230-8		 qxq ~9\My  
TO52S1		 h*Ej}_  
Ø0.23		 i^8Zp;O"f  
0.04		 #Jn_"cCRLx  
0.3		 ~7*HZ:.  
0.18
gaJS6*P#  
500022		 L6FUC6x"  
AD230-8		 jooh`| `P  
TO52S3		 e2;"> tp6?  
Ø0.23		 g+f{I'j  
0.04		 jE{z4en  
0.3		 UuN(+&oD-  
0.18
:%Bo)0a9  
501496		 OIN]u{S  
AD230-8		 #2}S83 k  
ODFN2x2		 Qr/?tMALc  
Ø0.23		 + }^  
0.04		 &B) F_EI  
0.3		 Y$N|p{Z  
0.18
1{A 4_/R  
501077		 te1lUQ  
AD500-8		 pDu~84!])  
LCC6.1		 j*P@]&e7d  
Ø0.5		 2 `#|;x^<  
0.2		 zdY`c  
0.5		 /%.K`BMN  
0.35
sg3%n0Ms.W  
501076		 7JujU.&{6  
AD500-8		 o;"!#Z 1SJ  
LCC6.1f		 @x)z" )>  
Ø0.5		 1 @/+ c  
0.2		 %o5GD  
0.5		 7n#0eska,  
0.35
1j}o. 0\  
501809		 /GEqU^ B  
AD500-8		 I qma vnM#  
LCC6.1f		 iJ~p X\FKO  
Ø0.5		 &fW;;>  
0.2		 )xi|BqQz  
0.5		 $BG9<:p  
0.35
w=OT^d 9n  
500030		 ~ejHA~QC  
AD500-8		 {D7!'Rq,  
TO52S1		 0\.y0 K8  
Ø0.5		 9!o:)99U  
0.2		 Nz2}Ma 2  
0.5		 0^hz1\g  
0.35
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500305		 J9{B  
AD500-8		 [3j]r{0I  
TO52S2		 Uq"RyvkpP  
Ø0.5		 !j\  yt  
0.2		 nPKf~|\1{  
0.5		 c!s{QWd%  
0.35
P4s:wuJ^  
500155		 B~z& "`  
AD500-8		 X^"95Ic  
TO52S3		 :I1bGa&I  
Ø0.5		 r0_3`; H  
0.2		 e=YvM g  
0.5		 P[^!Uq[0n7  
0.35
)5bhyzSZI  
500947		 T?Gi;ld7  
AD800-8		 |rsu+0Mtz  
TO52S1		 pp/Cn4"w  
Ø0.8		 D*heYh  
0.5		 w!%Bc]  
2		 VYvHpsI  
0.7
sA:0b5_a  
501117		 Z#d_<e?  
AD1100-8		 0YW<>Y`6  
TO52S1		 P oC*>R8  
Ø1.13		 i_I`Y  
1		 ^-rb&kW@:  
4-6		 s}UPe)Vu  
1
RKRk,jRL  
500015		 E+csK*A7  
AD1900-8		 i x,5-j  
TO5i		 l =xy_ TCf  
Ø1.95		 km.xy_v  
3		 _epi[zf@  
15		 =f?|f  
1.4
*S`& X Pj  
501194		 9^>nZ6  
AD3000-8		 "rBo?%:  
TO5i		 -k")#1  
Ø3		 XP~4jOL]  
7.07		 &U!@l)<  
30		 |G!-FmIK  
2
mam|aRzd  
500160		 3/P2&m  
AD5000-8		 ps^Z)x`GV  
TO8i		 t d-EB&i\  
Ø5		 k oZqoP  
19.63		 8.F]&D0p8  
60		  E*i <P  
3
u0Irf"Ab  
500002		 S"V|BU  
AD230-8-2.3G		 l '<gkwX  
TO5		 (khjP ,  
AD230-8-2.3GTO5 is a high frequency optical data receiver comprising an Avalanche SiliconPhotodiode and a transimpedance amplifier in a hermetically sealed TO5package.
c2-NXSjsW  
500003		 Sycs u_je  
AD500-8-1.3G		 Z[[ @O  
TO5		 r^q@rL>   
AD500-8-1.3GTO5 is a high frequency optical data receiver comprising an Avalanche SiliconPhotodiode and a transimpedance amplifier in a hermetically sealed TO5package.
[C.Pzo  
Series 9: NIR sensitivity enhanced-900nm(specifically for LIDAR and laser rangefinders)
Z<;am  
Order #		 +)dQd T0Fq  
Type		 s^)wh v`C  
Active Area		 pk:YjJs  
Dark Current		 lt`#or"o  
Rise Time
"~> # ;x{  
Chip		 'OK)[\  
Package		 v=RQ"iv8  
Size		 #0zMPh /U}  
Area		 #EgFB}>1  
M=100		 z%<Z#5_N  
M=100
_r^Cu.[7  
mm		 UPfH~H[1)  
mm2		 L*"Q5NzB]  
nA		 ]9pK^<  
ns
5~5d%C^3k  
501815		 =I-SQI8  
AD100-9		 /n"Ib )M  
LCC6.1		 KD11<&4_x  
Ø0.1		 4en[!*  
0.008		 :U$<h  
0.1		 0sD"Hu  
<0.5
ou0(C `  
501816		 F]:@?}8R  
AD100-9		 {R5Q{]dK3  
LCC6.1f		 mQ*:?\@  
Ø0.1		 o4^rE<vJ  
0.008		 FZ)_WaqGf  
0.1		 / q*n*j  
<0.5
8vjaQ5  
501123		 fo;Ftf0  
AD230-9		 NifzZEX  
LCC6.1		 HN9!~G  
Ø0.23		 60ccQ7=  
0.04		 5ztHar~f  
0.5		 n}Pz:  
0.5
R2|v[nh  
501817		 .KSPr  
AD230-9		 Oc8]A=M12  
LCC6.1f		 t2Q40' `  
Ø0.23		 v!{mpF  
0.04		 $k5mI1~  
0.5		 i"V2=jTeBv  
0.5
;-Fr^|do y  
500020		 =B-a]?lM  
AD230-9		 G$kspN*"A  
TO52S1		 I CCmE#n  
Ø0.23		 >|1.Z'r/  
0.04		 wH&[Tg  
0.5		 J\VG/)E  
0.5
nG hFYQl  
501265		 <!gq9  
AD230-9		 G9"2h \  
TO52S1F2		 a"ZBSg(  
Ø0.23		 MLf,5f;e  
0.04		 ig(dGKD\=9  
0.5		 >T: Yp<  
0.5
Pp.qDkT  
500023		 mVUDPMyZ  
AD230-9		 G$FNofQx  
TO52S3		 7UM!<@9\  
Ø0.23		 rWzw7T~  
0.04		 HMDQEd;  
0.5		 IWbW=0IsS  
0.5
z'FD{xdf  
501122		 ,QU2xw D[  
AD500-9		 gwHNz5 a*V  
LCC6.1		 zOO:`^ m  
Ø0.5		 fS2 ^$"B|  
0.2		 OY$P8y3MY  
0.8		 $!F_K  
0.55
agdiJ-lyQ  
501818		 ,I# X[^/  
AD500-9		 u xif-5  
LCC6.1f		 CtItzp  
Ø0.5		 u7R:7$H  
0.2		 ^D` ARH  
0.8		 -OY[x|0  
0.55
E5@U~|V[  
500031		 eF)vx{s  
AD500-9		 %{'hpT~h  
TO52S1		 ,jVj9m  
Ø0.5		 &d/v/Y  
0.2		 `72 uf<YQ  
0.8		 eTi r-7  
0.55
tu(k"'aJ  
500590		 7I.7%m,g  
AD500-9		 v"x{oD$R  
TO52S1F2		 ~]t/|xep  
Ø0.5		 TK"!z(p  
0.2		 PP{2{  
0.8		 Zr!he$8(2  
0.55
GMLDmTV  
500306		 F^Q[P4>m\  
AD500-9		 mMLxT3Ci8  
TO52S2		 +Fu=9j/,j  
Ø0.5		 L\p@1N?K  
0.2		 ){=2td$=$  
0.8		 Nc4e,>$]&  
0.55
TM_ MJp  
500156		 GUUVE@Z  
AD500-9		 M+Rxt.~6  
TO52S3		 5$SO  
Ø0.5		 _Se~bkw?v  
0.2		 cZn B 2T?  
0.8		 r +X%0@K  
0.55
]F&<{\:_}  
501196		 6.fahg?E  
AD800-9		 JpuF6mQ  
TO52S1		 q!l[^t|;  
Ø0.8		 e [D'0L  
0.5		 y7 tK>aD}  
2		 MguH)r` uT  
0.9
Gx75EQ2  
501197		 NG!~<Kx   
AD1100-9		 |BysSJ  
TO52S1		 G[V?# 7.  
Ø1.13		 FBfyW- 7  
1		 -#XNZy!//  
4		 \ ]AsL&  
1.3
z1oikg:?4  
501208		 "WKE% f  
AD1500-9		 m<ZwbD  
TO5i		 41swG  
Ø1.5		 7QdU|1]  
1.77		 mtEE,O!+  
2		 =A,32&;@N  
2
x+h7OvW{  
501198		 Z4#lZS`'A  
AD3000-9		 @21G[!%J  
TO5i		 IyE9G:fY  
Ø3		 gd9ZlHo'Id  
7.07		 G $u:1&   
30		 -B\`O*Q  
2
m9^ ? p  
500161		 Zxw>|eKI>D  
AD5000-9		 /wIev1Z!Y  
TO8i		 % ~%>3  
Ø5		 >c~~i-=  
19.63		 #mqz*=L3  
60		 Gq5)>'D?  
3
,wmPK;j  
500756		 JnX@eBNV  
AD230-9-400M		 KZV$rJ%G  
TO5		 ?5m[Qc (<  
AD230-9-400M-TO5 is a high frequency optical data receivercomprising an Avalanche Silicon Photodiode and a transimpedance amplifier ina hermetically sealed TO-5 package.
BaIh,iu  
500490		 z41 p $  
AD500-9-400M		 _\ n'uW$  
TO5		 :SSlUl4sU$  
AD500-9-400M-TO5 is a high frequency optical data receivercomprising an Avalanche Silicon Photodiode and a transimpedance amplifier ina hermetically sealed TO-5 package.
;8sEE?C$g  
Multi-Element Array
UP:+1Sp9  
501099		 }#@P+T:b  
8AA0.4-9		 ff"Cl p  
SOJ22GL		 F' ZLN]"{  
APD Array 8 Elements, QE>80% at760-910nm with NTC
6 USet`#  
501098		 Z2 B59,I  
16AA0.13-9		 (mHFyEG  
SOJ22GL		 B\bIMjXV  
APD Array 16 Elements, QE>80% at760-910nm with NTC
/IVw}:G  
500038		 rS9*_-NH  
16AA0.13-9		 1p,G8v+B  
DIL18		 %V;k/w~[  
APD Array 16 Elements, QE>80% at760-910nm
DC`6g#*<  
501097		 lfR"22t  
16AA0.4-9		 ;B`e;B?1Q  
SOJ22GL		 }}~ ^!  
APD Array 16 Elements, QE>80% at760-910nm
NW=j>7  
50130802		 F!{N4X>%T  
25AA0.04-9		 3 Yl[J;i  
BGA		 NVFAmX.Z:  
APD Array 25 (5×5) elements, QE>80% at760-910nm with PTC
#v-)Ie\F?  
50130802		 ,%d n)gt7  
25AA0.16-9		 +u _mT$|T  
BGA		 _*Vq1D]C  
APD Array 25 (5×5) elements, QE>80% at760-910nm with PTC
M 0->  
50130702		 qd3B>f  
64AA0.04-9		 /eR@&!D '  
BGA		 7K9+7I&C  
APD Array 64 (8×8) elements, QE>80% at760-910nm with PTC
wr*A%:  
501207		 cJ:BEe  
QA4000-9		 "DWw1{ 5/  
TO8Si		 ]-{T-*h:  
Quadrant Avalanche Photodiode, QE>80%at 760-910nm
)2F:l0g  
Series 10: NIR sensitivity enhanced -1064nm (specifically for laser rangefinders, targeting systems or anyapplications using YAG lasers or similar NIR radiation sources)
(B]Vw+/  
Order #		 zy@ #R;  
Type		 Re<X~j5]  
Active Area		 hU G Iy(  
Dark Current		 ?vf{v  
Rise Time
@c$mc  
Chip		 h.'h L  
Package		 J+?xfg  
Size		 |#5JI #,vX  
Area		 l W&glU(  
M=100		 2T?t[;-  
M=100 1064nm
Q;r 0#"  
mm		 XA9$n_| bw  
mm2		 D (qT$#  
nA		 :CHCVoh@95  
ns
M~N'z /  
500953		 lu-VBVwR  
AD500-10		 [Z Ea3/  
TO5i		 ,\}V.:THF  
Ø0.5		 H3OH  
0.2		 $BH0W{S  
1.5		 `p1`Sxz?  
4
5+%BZ  
501233		 L1)?5D  
AD800-10		 G=Ka{J  
TO5i		 GUat~[lUrj  
Ø0.8		 , {z$M  
0.5		 7\{<AM?*  
3		 NV9=~c x  
5
SCxzT}#J  
500883		 E? F @  
AD1500-10		 V=(4 c  
TO5i		 -]'Sy$,A  
Ø1.5		 oF ,8j1  
1.77		 D"1ciO8^I]  
7		 FLy|+4D_%4  
5
!JYDg  
50123401		 Vp5qul%  
AD4000-10		 $#Ji=JX  
TO8Si		 bk4%lYJ"  
Ø4		 ,u]kZ]  
12.56		 sOJ"~p  
50		 \mc~w4B[)3  
6
y'pG'"U]_  
501387		 3Q`'C7Pi  
AD800-10		 hr6f}2  
TO8S		 M5)6|T  
High speed, high gain, low noise, lowpower consumption hybrid (AD800-10+TIA)
iQa Q"s  
Multi-Element Array
p3x(:=   
501174		 4dfe5\  
QA4000-10		 /h2`?~k+  
TO8Si		 cVulJ6  
Quadrant Avalanche Photodiode, High QE at850-1070nm
Ld`~^<B  
TvdmgVNP  
如有需要，可直接联系我们，也可以登录官网查找所需要的产品： SxT:k,ji  
网址：http://www.newopto.com pbm4C0W}  
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