高
功率LED製程技術
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D 3Int0n 5l)p5Bb48c LED 發展
vZ|-VvG GaN發光效率
7c;59$2( Conventional versus Power LED
z':>nw TYNTEK 40 mil Power chip
AA05wpu8 Snellius Law 全反射臨界角損失
m41n5T` Light Extraction
Po^2+s(fY Lumileds AlGaInP LED
a`|/*{ Improved design of LEDs to increase efficiency
1U"Y'y2 Lumileds AlGaInP LED
53(m9YLk Truncated-inverted-pyramid LED
0/] @#G2 Cree Standard and TIP LED的出光表現
9`09.`U9[ Osram’s InGaN Chip
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鑽石切割與雷射切割
'`3-X];p 共晶接合
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S&vd Au-Sn phase diagram
\sRRLDj% 超音波接合
/!%P7F 專利 Lumileds-3
<D4)gRRo 覆晶元件的可靠度
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