高
功率LED製程技術
|e[0Qo@ .s*EV!SE 目录
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[@ Am?Hkh2 LED 發展
>dm._*M GaN發光效率
Yg,WdVI&@ Conventional versus Power LED
;@Hi*d[ TYNTEK 40 mil Power chip
kRXg."b( Snellius Law 全反射臨界角損失
bq&S?! =s Light Extraction
DUliU8B}\ Lumileds AlGaInP LED
}nY^T&?` Improved design of LEDs to increase efficiency
|{LaZXU & Lumileds AlGaInP LED
&?Z)V-1H Truncated-inverted-pyramid LED
?G>TaTiK# Cree Standard and TIP LED的出光表現
j}.J$RtW1f Osram’s InGaN Chip
<W%Z_d&Xv ...........
CU`Oc>;*T ...........
GGL4<P7 ..........
t7+Ic 鑽石切割與雷射切割
l}-`E@w 共晶接合
~)8i5p;P/k Au-Sn phase diagram
jv=f@:[`I 超音波接合
IS4K$Ac. 專利 Lumileds-3
v4##(~Tu 覆晶元件的可靠度
wJR i;fvi ....................
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