高
功率LED製程技術
Pr':51( W <9T0sZ 目录
T0wW<_jh ?PuBa`zDE LED 發展
}eCw6 GaN發光效率
;w{tv($$ Conventional versus Power LED
xI #9 TYNTEK 40 mil Power chip
0fb2;&pUa Snellius Law 全反射臨界角損失
;#g"( Light Extraction
TV)h`\|Z* Lumileds AlGaInP LED
jl4rbzse Improved design of LEDs to increase efficiency
Si2k"<5U Lumileds AlGaInP LED
%aG5F}S2~ Truncated-inverted-pyramid LED
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f Cree Standard and TIP LED的出光表現
cM(:xv Osram’s InGaN Chip
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a#cCpE 鑽石切割與雷射切割
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X 共晶接合
1{)5<!9! l Au-Sn phase diagram
: %lTU 超音波接合
.5^cb%B* 專利 Lumileds-3
jD$,.AVvz 覆晶元件的可靠度
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