高
功率LED製程技術
*%OYAsc w PG1P'w; 目录
_4.]A3;} $S6HZG:N LED 發展
#hD}S~ GaN發光效率
{uaZ<4N. Conventional versus Power LED
Yo~LckFF TYNTEK 40 mil Power chip
rP^TN^bd| Snellius Law 全反射臨界角損失
G%P>Ag Light Extraction
VxkCK02k Lumileds AlGaInP LED
(B_7\}v|_ Improved design of LEDs to increase efficiency
QQg8+{> Lumileds AlGaInP LED
E ;BPN Truncated-inverted-pyramid LED
kCaO\#ta Cree Standard and TIP LED的出光表現
vU_d=T%$ Osram’s InGaN Chip
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~ON1Zw[+ 鑽石切割與雷射切割
,:#,}w_HyO 共晶接合
>63)z I Au-Sn phase diagram
f7XQ~b 超音波接合
ID67?:%r 專利 Lumileds-3
{fGd:2dh 覆晶元件的可靠度
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