高
功率LED製程技術
Wu)ATs} 2'g< H-[ 目录
w?ssV 9[DQ[bL LED 發展
)6)|PzMQ' GaN發光效率
BOJh-(>I Conventional versus Power LED
\Ekez~k{` TYNTEK 40 mil Power chip
3(P^PP8 Snellius Law 全反射臨界角損失
Pb?H cg Light Extraction
`XYT:' Lumileds AlGaInP LED
';V(sRU@ Improved design of LEDs to increase efficiency
i]GBu Lumileds AlGaInP LED
Gb61X6 Truncated-inverted-pyramid LED
jIE>t5 fy Cree Standard and TIP LED的出光表現
K-wjQ|*1 Osram’s InGaN Chip
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kN9S;o@) 鑽石切割與雷射切割
DHpU?;|3 共晶接合
3M{!yPlj Au-Sn phase diagram
T~$ePVk>L 超音波接合
nR/; uTTz 專利 Lumileds-3
!boKrSw 覆晶元件的可靠度
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