高
功率LED製程技術
Gqvj q{?Po;\D 目录
Q5b~5a O RAKg.49 LED 發展
3C{3"bP GaN發光效率
wyvrNru<l4 Conventional versus Power LED
H48`z'o TYNTEK 40 mil Power chip
LT']3w Snellius Law 全反射臨界角損失
{PZNJ 2~ Light Extraction
="hh=x.5J Lumileds AlGaInP LED
xcz[w}{eEq Improved design of LEDs to increase efficiency
3eX;T +|o Lumileds AlGaInP LED
%9B r Truncated-inverted-pyramid LED
xFvDKW)_X7 Cree Standard and TIP LED的出光表現
Vw0cf; Osram’s InGaN Chip
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:d\ne 鑽石切割與雷射切割
X;25G 共晶接合
@LZ'Qc
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X~wkqI#d%E 超音波接合
1ga.%M* 專利 Lumileds-3
DdJ>1504 覆晶元件的可靠度
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