新势力光电供应压力传感器芯片

新势力光电供应压力传感器芯片，采用高级电阻传感技术（STARe, Sensor Technology for AdvancedResistors），特点：稳定性高、适用于恶劣环境，该系列压力传感器芯片应用：腐蚀性、流动性、油性环境下的高精密压力传感测量，包括：汽车制造、工业、医疗、大型家电。

Lyr2(^#: Type	3p_b8K_bG Pressure	NI8~QeGah Min	9:-T@u Typ	&\k?xN Max	V\AK6U@r^ Unit
\!<"7=(J{4 The Pressure sensor chips are based onthe STARe (Sensor Technology for Advanced Resistors)
aM$=\|%9/ Standard Line STARe, Piezoresistive chipsfor pressure measurements of 1 to 30 bar
'00J~j~ SL21K-100k-A/GXX	"U{,U`@? 100 kPa	4{Udz! 40	MqdB\OW& 70	i=L8=8B` 130	Hd0Xx}3& mV@5V
3D[=b%2\ SL21K-250k-A/GXX	\5hw9T&[B 250 kPa	kwlC[G$j7 60	:G 5C ]'t 100	)[jy[[K( 140
zh%qS~8Yv SL21K-500k-A/GXX	OR;&TbWF(R 500 kPa	bnr\|Y!T}Bi 60	X2^_~<I{, 100	*H"aOT^{ 140
;Iq5\|rzDn SL21K-01M0-A/GXX	u!Bk,}CE` 1.0 MPa	lR@& Z6lw 60	~^7r?<aKc 100	:B.G)M\ 140
v459},!P SL21K-03M0-A/GXX	y]'CXCml) 3.0 MPa	p=B?/Sqa 60	B{aU;{1 100	6m[9b*s7 140
+"uwV1)b" Industrial Line STARe, Piezoresistivechips for pressure measurements of 100 mbar to 400 bar
>vVw!.fJ IL20L-10k0-GXX	j"hASBTgp 10 kPa	}0;Sk(B> 30	S+ebO/$> 60	DA=1KaJ. 120	{eR9 ;2! mV@5V
*1bzg/T< IL20L-35k0-A/GXX	s.:r;%a 35 kPa	Wc\|z7P~',% 40	.zSD`v@[ 100	)gXTRkmw 160
XLb0 9; IL20M-03M0-A/GXX	e4[) WNR 3.0 MPa	4RQ5(YTTuR 60	Pp*}R2 100	Tpzw=bC^ 140
KlUqoJ;" IL20M-100k-A/GXX	0S.?E.-&0 100 kPa	WZ?!! 60	*jF#^= 100	\r;F2C0*i 140
l>7r2; IL20M-250k-A/GXX	FkB{ SCJ 250 kPa	t5)J;0/ 60	F=}Z51\|:~ 100	Mm#[&j[Y 140
r)b<{u=] IL20M-500k-A/GXX	RrWNJ&o 500 kPa	%+wF" 60	wiE]z 100	zZ,Yfd\|W 140
]yLhJ_^ IL20M-01M0-A/GXX	&Rp"rMeW 1.0 MPa	'qy#)F 60	Q4wc-s4RN 100	&&PgOFD 140
2OalAY6RS IL20M-10M0-A/GXX	:3?\|VE F 10.0 MPa	16$y`~c-z 200	]0/p 7N14 250	9+Nw/eszO 300
B*,?C]0{ IL20M-40M0-AXX	c_1/W{ 40.0 MPa	R0<< f] 230	1V%'.l9 290	BXhWTGiG 350
cOku1g8 High Stability Line STARe, Piezoresistivechips for pressure measurements of 60 mbar to 400 bar
#J$qa Ul HS20V-06k0-A/G/D05	-_~)f{KN@ 6 kPa	SLoo:) 60	DJP6TFT&G 100	R8<eN9bJ9 140	:'*DMW~ mV@5V
[xdj6W HS20V-10k0-A/G/D05	I]uhi{\C 10 kPa	>.LKct*5K 60	~L4eZ 100	l4ouZR 140
)\|]Z>>%t HS20L-35k0-A/G/DXX	hz)9"B\S 35 kPa	4P kfUMX 60	]rW8y%yD 100	aqr!oxn?t 140
zk=\lp2 HS20L-100k-A/G/DXX	3s(Ia^ 100 kPa	8A{6j 60	QnKC# 100	qY(:8yC36 140
zWIeHIt HS20M-250k-A/G/DXX	Z+idLbIs 250 kPa	#Lka+l;L7 60	yFM>T\@ 100	JSW&rn 140
slvq9, HS20M-500k-A/G/DXX	9L)L\|4A.l 500 kPa	7g6RiH} 60	Y<LNQ]8\G 100	WC-_+9)2& 140
/f3m)pT HS20M-01M0-A/G/DXX	?R6`qe_F 1.0 MPa	,Y!zORv<7 60	BaL]mIx 100	Lk.h.ST 140
0Nr\2\| HS20M-03M0-A/G/XX	h<3p8eB 3.0 MPa	$qm~c[x% 60	8H $#+^lW 100	y1,5$0@G 140
x9V {R9_gf HS20M-10M0-A/GXX	iBvOJs 10.0 MPa	^ d\SPZ 200	e@jfIF0=} 250	a[C&e,)} 300
E`)Qs[?Gk HS20M-20M0-A08	$G[KT):N 20.0 MPa	{;k_!v{ 60	UqtHxEI%R~ 100	#s+Q{2s 140
.~`Y)PON HS20M-40M0-A08	$Jf9;. 40.0 MPa	Sdc*rpH"( 60	_!:@w9 100	MsjnRX:c3u 140
se,Z#H Harsh Environmental Line, Piezoresistivechips for pressure measurements of 2 bar to 16 bar
(=JueF@J HE11C-200K-AXX	h5-d;RKE 200 kPa	grbTcLSF 60	V^En8 100	;BI)n]L 140	( V4G<-jG mV@5V
SDc" 4g` HE11C-400K-AXX	\_ -DyD#3 400 kPa	hTw}X.<4 60	Jz$>k$!UD 100	q^Inb)FeN 140
u^=@DO' HE11C-800K-AXX	a:u}d7T3e 800 kPa	},PBqWe 60	T %/ 100	M=%!IT 140
ragSy8M HE11C-01M6-AXX	Cef7+fa 1.6 MPa	Yy@g9mi 60	DHzkRCM 100	p7UTqKi 140

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