新势力光电供应压力传感器芯片

新势力光电供应压力传感器芯片，采用高级电阻传感技术（STARe, Sensor Technology for AdvancedResistors），特点：稳定性高、适用于恶劣环境，该系列压力传感器芯片应用：腐蚀性、流动性、油性环境下的高精密压力传感测量，包括：汽车制造、工业、医疗、大型家电。

NR5A"_' Type	l{4\Wn Va Pressure	?}.(k/ Min	4w,}1uNEf Typ	PhQD}\|S Max	"7DPsPs Unit
N>_7Ltw/ The Pressure sensor chips are based onthe STARe (Sensor Technology for Advanced Resistors)
{T9g\F* Standard Line STARe, Piezoresistive chipsfor pressure measurements of 1 to 30 bar
TH-^tw SL21K-100k-A/GXX	!8$}]uWP 100 kPa	kH'Cx^=c6h 40	gqhW.e}] 70	FYJB.lAT 130	1 /`>Eh mV@5V
G+}LLm.wX SL21K-250k-A/GXX	F-6* BUqJ 250 kPa	V-31x) 60	T7v8}_"- 100	E9i WGSE 140
q%"nk SL21K-500k-A/GXX	VF-d^AGt 500 kPa	*VUXw@ 60	DCm;dh 100	W[jxfZD9v 140
4}CRM# W2 SL21K-01M0-A/GXX	e0TnA N 1.0 MPa	=cQwR:): 60	:1iw_GhJf 100	B.\|vmq,u 140
Dj\|S SL21K-03M0-A/GXX	B@4#y9`5 3.0 MPa	3Rm$ 60	Z6=!}a% 100	iw{n\|&Y#` 140
OKP?^%kD Industrial Line STARe, Piezoresistivechips for pressure measurements of 100 mbar to 400 bar
bMZ0%(q IL20L-10k0-GXX	QqDF_ 10 kPa	[Xrq+O, 30	buoz La 60	>iCMjT]4 120	{`'b+0[;@ mV@5V
@ZVc!5J_, IL20L-35k0-A/GXX	~ 0[K%]] 35 kPa	0\mzGfd 40	..!yf e"5 100	zt8ZJlNK 160
[H&m@*UO IL20M-03M0-A/GXX	Hq~ 2,#Ue 3.0 MPa	U+ 8[Ia(t 60	g/E;OcFaO 100	[ /D/ 140
)-9/5Z0v IL20M-100k-A/GXX	`>*P(yIN 100 kPa	c]9OP9F 60	kO4C^pl"v 100	ql4T@r3l}3 140
F,D& IL20M-250k-A/GXX	IJ0RHDod: 250 kPa	6?~pWZ&k_ 60	dug RO[ 100	G$Dg*< 140
%6n;B\|! IL20M-500k-A/GXX	@f$P*_G 500 kPa	2vwT8/ 60	"[%NXan 100	Ua:EI!` 140
#<JrSl62(K IL20M-01M0-A/GXX	<I>q1m?KN 1.0 MPa	ka5>9E 60	5ZSw0A(w 100	Pk,^q8; 140
N&n{R8=^" IL20M-10M0-A/GXX	j04Q3d \f 10.0 MPa	C/E3NL8 200	[W;14BD7 250	LP87X-qkjW 300
y0Tb/&xN IL20M-40M0-AXX	*f[`Yv 40.0 MPa	f="}. 230	\|k)u..k{> 290	!87ebo 350
]*@7o^4i High Stability Line STARe, Piezoresistivechips for pressure measurements of 60 mbar to 400 bar
* T-XslI HS20V-06k0-A/G/D05	\|XsW)/ 6 kPa	)yK!EK\ 60	#*~ ( 100	oU2RxK->u 140	Ro1l:P)C` mV@5V
M,9WF)p)V HS20V-10k0-A/G/D05	DQ~@=%?ni 10 kPa	`wq\K8v 60	`R^)<v* 100	=?}'\ >G " 140
WcdU fv(> HS20L-35k0-A/G/DXX	0 cQf_o 35 kPa	\|k^X!C0 60	,Pl[SMt! 100	41:Z8YL( 140
mX#T<_=d HS20L-100k-A/G/DXX	S-1}3T% 100 kPa	qaUHcdH 60	U9@q"v- 100	JRG7<s$ 140
wM\|-u/9+ HS20M-250k-A/G/DXX	:O{:;X) 250 kPa	E{FNsa 60	WgY3g1C 100	s_]rje8` 140
f[z#=zv HS20M-500k-A/G/DXX	3(CUC 500 kPa	Lrk^<:8; 60	=\q3;5[ 100	'r-a:8:t^ 140
R; IB o HS20M-01M0-A/G/DXX	lKm?Xu'yH 1.0 MPa	5tf/VT 60	ch-GmAj 9 100	:]]amziP& 140
m.2 HS20M-03M0-A/G/XX	HezCRtxRcc 3.0 MPa	*zmbo >{( 60	Wima=xYe\5 100	wp@c;gK7 140
EswM#D9(4 HS20M-10M0-A/GXX	MF& +4$q 10.0 MPa	1e&`m~5K+ 200	+xWT)h/ 250	63at lq 300
*:_.cbo HS20M-20M0-A08	}e82e 20.0 MPa	\Oc3rJ( 60	l5aQDkp} 100	`;`34t_) 140
al^ yCoB HS20M-40M0-A08	WjA)0HL( 40.0 MPa	r^]0LJ 60	~#gVs*K 100	k1]?d7g$w 140
44n^21k Harsh Environmental Line, Piezoresistivechips for pressure measurements of 2 bar to 16 bar
k6dSj>F> HE11C-200K-AXX	D L$P 200 kPa	Qz $1_vO 60	DTJ~. 100	>0f5Mjug 140	Haturg mV@5V
Ble <n6 HE11C-400K-AXX	vuD tEz 400 kPa	a1s=t_wT 60	W/+\|dN{O+g 100	d/\|@"z^? 140
\n/_Px HE11C-800K-AXX	Rk"_4zJk 800 kPa	br0gB3r 60	73P(oVj< 100	398%16} 140
c.NAUe_3 HE11C-01M6-AXX	}bHdU]$} 1.6 MPa	;Ni+TS 60	qG~O]($ 100	Vj`9j. 5 140

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