新势力光电供应压力传感器芯片

新势力光电供应压力传感器芯片，采用高级电阻传感技术（STARe, Sensor Technology for AdvancedResistors），特点：稳定性高、适用于恶劣环境，该系列压力传感器芯片应用：腐蚀性、流动性、油性环境下的高精密压力传感测量，包括：汽车制造、工业、医疗、大型家电。

60=m Type	5F\|8?BkOL^ Pressure	q*![AzFh Min	DD9?V}Yx Typ	fEE /-}d Max	6C4'BCYW( Unit
\,Lo>G`! The Pressure sensor chips are based onthe STARe (Sensor Technology for Advanced Resistors)
Hy"x Standard Line STARe, Piezoresistive chipsfor pressure measurements of 1 to 30 bar
2O"P2(1}v SL21K-100k-A/GXX	Do%-B1{ri 100 kPa	juF{}J2 40	XMB[h 70	IPSF]"}~ 130	R1:k23{ mV@5V
%n%xR%\| SL21K-250k-A/GXX	./j,Z$\| 250 kPa	MF3b{\|Z 60	)?M9\|u 100	g[>\4B9t 140
}0`nvAf SL21K-500k-A/GXX	,B&fFis 500 kPa	8 #X5K 60	)Dp/('Z2 100	8l?piig# 140
d8SE,A& SL21K-01M0-A/GXX	G!8Z~CPF 1.0 MPa	49Df?sx 60	8E&XbqP+ 100	qQi.?<d2"s 140
8By,#T". SL21K-03M0-A/GXX	2-zT$`[]J 3.0 MPa	/<CSVJ_r 60	GBFw+v/\|4 100	z)XRx:YU;$ 140
Giq=*D+ Industrial Line STARe, Piezoresistivechips for pressure measurements of 100 mbar to 400 bar
5Ft5@UF~ IL20L-10k0-GXX	t#nn@Yf 10 kPa	$I#q 30	04%S+y.6&Y 60	o47r<>t 120	G1t\Q-\|l0 mV@5V
w#JJXXQI IL20L-35k0-A/GXX	@ DZD 35 kPa	jEc\|]E 40	<XTU8G 100	\ 6EKgC1 160
{ 74mf'IW IL20M-03M0-A/GXX	)5%C3/Dl! 3.0 MPa	Et"?8\"n7 60	M L7\BT 100	'6$*YN&5 140
G5dO 3lwq IL20M-100k-A/GXX	B,z<%DAE 100 kPa	*'"T$ib 60	k"kJ_( 100	C8#@+Q. 140
a</D_66 IL20M-250k-A/GXX	EA.D}XC 250 kPa	vN4Qdpdb 60	Vh3Ijn 100	2;L\|y._`w 140
<J(sR IL20M-500k-A/GXX	w(L>#? 500 kPa	q;5i4\| 60	e98lhu"\|H 100	=H0vE7{* 140
@4%L36k IL20M-01M0-A/GXX	GN#<yv$av 1.0 MPa	xE}VTHFo' 60	x\?;=@AW 100	ej&<GM\| 140
L_Q#(in IL20M-10M0-A/GXX	\|vte=)% 10.0 MPa	1\RGM<q$f 200	9 7%0;a8 250	I O%6 O 300
cN! uV-e IL20M-40M0-AXX	3`O?16O 40.0 MPa	lX:\|iB 230	Bhqft;Nuh 290	0Q"u#V Sp 350
}14{2=!Q High Stability Line STARe, Piezoresistivechips for pressure measurements of 60 mbar to 400 bar
jk\ dG16 HS20V-06k0-A/G/D05	<1w/hy&mWN 6 kPa	)oo~m\` 60	eRbGZYrJ 100	F Kc;W 140	E< 4l#Z< mV@5V
l=`L7\| ^/d HS20V-10k0-A/G/D05	w)E@*h<Z 10 kPa	Gy1xG.yM~ 60	?!w^`D0}o 100	B}OY/J/*8 140
3<\|`0pt} HS20L-35k0-A/G/DXX	=9L$L\|W 35 kPa	6 y"-I!& 60	NIZ<0I*5 100	M_B:{%4 140
j$fAq\B HS20L-100k-A/G/DXX	Uts"aQ 100 kPa	I3u{zHVwI 60	SEQ%'E5-' 100	LiDvaF:@L! 140
]!1OH \|Ad HS20M-250k-A/G/DXX	sKLX[l 250 kPa	hlvt$Jwq 60	qv 3^5d 100	hovGQHg 140
L;_c\|\% HS20M-500k-A/G/DXX	iMF<5fLH& 500 kPa	\8uo{#cL8 60	F9c`({6k 100	VvByHcLv 140
BUUf;Vv HS20M-01M0-A/G/DXX	~>G]_H]? 1.0 MPa	CozKyt/r7 60	[{[N(g&d 100	7k{2Upg; 140
-y) ,Y \| HS20M-03M0-A/G/XX	VCNT4m 3.0 MPa	u%\|zc= 60	,7]k fB 100	1F[L"W;r 140
?9j{V7h HS20M-10M0-A/GXX	[c K^+s)N 10.0 MPa	i;\s.wrzH 200	v\|Jlf$> 250	$X`y%*<<v 300
TmRxKrRs HS20M-20M0-A08	n_[i0x7# 20.0 MPa	P=AS>N^yaL 60	XY7Qa!>7j 100	z,;;=V6j 140
3{raKM6F HS20M-40M0-A08	T*2C_oW 40.0 MPa	%:6?Y%`*[ 60	_cJ[ FP1 100	D _X8- 140
qG8s;_G Harsh Environmental Line, Piezoresistivechips for pressure measurements of 2 bar to 16 bar
4Wel[] HE11C-200K-AXX	dLh6:Gh8_I 200 kPa	`linG1mF 60	UP1?5Q=H]Q 100	@B1{r\|-<^ 140	A//?6OJx? mV@5V
q?{}3 dPC HE11C-400K-AXX	6/ g%\ka 400 kPa	#~Q=h`9 60	>G)qns9 100	d{+(Lpj^ 140
I8m:3fL" HE11C-800K-AXX	~GB=Nz 800 kPa	=6%\|?5G 60	HB& & 100	uK*\|2U6t 140
_uH9XGm HE11C-01M6-AXX	/F[+13C 1.6 MPa	% +Pl+`?E 60	K!{5[G 100	W*T{,M@Y 140

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