新势力光电供应压力传感器芯片

新势力光电供应压力传感器芯片，采用高级电阻传感技术（STARe, Sensor Technology for AdvancedResistors），特点：稳定性高、适用于恶劣环境，该系列压力传感器芯片应用：腐蚀性、流动性、油性环境下的高精密压力传感测量，包括：汽车制造、工业、医疗、大型家电。

%SIll Type	U&R)a\| 7R Pressure	P nE7} Min	BI,]pf;GWv Typ	Z>y6[o Max	o*7NyiJ@z Unit
~:Z\|\a58j The Pressure sensor chips are based onthe STARe (Sensor Technology for Advanced Resistors)
hwe6@T.# Standard Line STARe, Piezoresistive chipsfor pressure measurements of 1 to 30 bar
Gchs$^1`t SL21K-100k-A/GXX	n]4Elrxx 100 kPa	'JdK0w# 40	K7JZUS`C! 70	ZaY\|v- 130	R8lja%+0$ mV@5V
gS[B;+d SL21K-250k-A/GXX	\|H^v8^%>zm 250 kPa	<aaT,J8%[ 60	x5PM]~"p 100	sDg1nKw( 140
\ Qx%76 SL21K-500k-A/GXX	RaSuzy^`*] 500 kPa	5p~5-_JX 60	jf;n* 100	0%&}wUjV 140
4,:I{P_>6B SL21K-01M0-A/GXX	}8}`A\dgV 1.0 MPa	=BR+J9 60	%4M,f.[e 100	fHZ9wK> 140
}L\|B@fW SL21K-03M0-A/GXX	M'R ] '' 3.0 MPa	T<Y*();Zo 60	W-r^ME 100	YGQ/zB^Pj 140
b1'849i'y= Industrial Line STARe, Piezoresistivechips for pressure measurements of 100 mbar to 400 bar
"S'Yn- IL20L-10k0-GXX	+Z_VF30pa 10 kPa	R%2.N!8v 30	qk^/&j 60	,']CqhL6=R 120	vmNI$KZM mV@5V
YSPUQ IL20L-35k0-A/GXX	=w!9:I&a0 35 kPa	R87@. 40	#d[Nm+~ko 100	5/U{b5 160
:'q$emtY IL20M-03M0-A/GXX	KCZ<#ca^ 3.0 MPa	Ug0c0z!b 60	b[:m[^ 100	) 5Ij 140
rZB='(? IL20M-100k-A/GXX	r~QE}00@^ 100 kPa	^%Y-~yB- 60	iE;F=Rb 100	hop\| xtai; 140
+]wM$bP IL20M-250k-A/GXX	*6u2c%^ 250 kPa	6)i>qz). 60	7J6Z? 100	6; )5v 140
M?P\YAn$ IL20M-500k-A/GXX	;C1#[U1Uy 500 kPa	#Q=c.AL{ 60	a0A=R5_ 100	!^NZp%Yd 140
hCgk78O? IL20M-01M0-A/GXX	dSTyx#o 1.0 MPa	6~{'\Z 60	6q`)%"4k 100	ui`EODhA( 140
sieC7raO IL20M-10M0-A/GXX	{gu3KV 10.0 MPa	}z9v*C 200	hRB?NM 250	?A.ah 300
z"QtP[_m IL20M-40M0-AXX	jbT{K\|d- 40.0 MPa	\|-*50j l 230	Gi@c`lRd1 290	%B1TN#KoT 350
}{,Wha5\n High Stability Line STARe, Piezoresistivechips for pressure measurements of 60 mbar to 400 bar
!RwhVaSh HS20V-06k0-A/G/D05	6'uCwAQU 6 kPa	(5+g:mSfr 60	\=\|=(kt) 100	NZ8X@\|N 140	T?Z^2.Pvc mV@5V
d2U?rw_ HS20V-10k0-A/G/D05	Q3bU"f 10 kPa	'+iLW~ 60	\|)&d9\|] 100	N\|"kuRN# 140
@6R6.i5d HS20L-35k0-A/G/DXX	suWO:]FR 35 kPa	hz<TjWXv' 60	j5/\|1N 100	!OPHS^L 140
O/(vimx.#F HS20L-100k-A/G/DXX	h\|Qb:zEP, 100 kPa	LLzxCMc9* 60	:w\|=o9J 100	grkA2%N 140
2w+4B4 HS20M-250k-A/G/DXX	8D?$@!- 250 kPa	4!96k~d} 60	}1Mf0S 100	glROT@ 140
}F9#3W&`c HS20M-500k-A/G/DXX	S+t2k&pm 500 kPa	3q@JhB 60	c(5XT[Tw 100	yQ<h>J> 140
rL+.3ZO):P HS20M-01M0-A/G/DXX	@;hdZLG]`& 1.0 MPa	L5\|g\Y` 60	fshG ~L7S9 100	Y8lZ]IB 140
]Z=al`- HS20M-03M0-A/G/XX	kv?DE4=; 3.0 MPa	jpW_q+^? 60	o#z$LT1dY 100	-^7 $HD 140
fWri7\|"0h HS20M-10M0-A/GXX	g$hEVT 10.0 MPa	` ` Yk 200	DYgB_Iak 250	! jDopE0L 300
Zvfy%k HS20M-20M0-A08	d`5AQfL& 20.0 MPa	: vgn0IQ 60	R4k+.hR 100	BYa#<jXtAT 140
oaILh HS20M-40M0-A08	q.@% H} 40.0 MPa	_X=6M gU 60	`/!FZh< 100	C"s-ttP 140
anfnqa8 Harsh Environmental Line, Piezoresistivechips for pressure measurements of 2 bar to 16 bar
cg9}T[A HE11C-200K-AXX	9!Xp+< 200 kPa	C6@*l~j 60	zh\"sxL 100	=iDd{$ 140	n^5Q f\o mV@5V
Gui[/iY,F HE11C-400K-AXX	mV4gw'.;7 400 kPa	),j6tq[ 60	X*5N&AJ 100	f4+wP/n& 140
0,.\|-OZ HE11C-800K-AXX	pm:-E(3# 800 kPa	B8.}9 60	v?Cakwu 100	q6>} 140
~kDJ-V HE11C-01M6-AXX	l7@cov 1.6 MPa	R1<$VR 60	WQD:~*C: 100	Wyeb1 140

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