新势力光电供应压力传感器芯片

新势力光电供应压力传感器芯片，采用高级电阻传感技术（STARe, Sensor Technology for AdvancedResistors），特点：稳定性高、适用于恶劣环境，该系列压力传感器芯片应用：腐蚀性、流动性、油性环境下的高精密压力传感测量，包括：汽车制造、工业、医疗、大型家电。

O,@~L$a:YZ Type	1O/ g&u Pressure	xdvh-%A4 Min	?sz)J3 Typ	R&f^+0%f Max	9W ^xlid6 Unit
'x"08v$ The Pressure sensor chips are based onthe STARe (Sensor Technology for Advanced Resistors)
jE2}p-2Q0 Standard Line STARe, Piezoresistive chipsfor pressure measurements of 1 to 30 bar
tWeFEVg SL21K-100k-A/GXX	= u[#2! 100 kPa	q.YfC 40	bi4f]^hQz 70	aGZi9O7G} 130	UBv@+\Y8m mV@5V
?:{sH#ua SL21K-250k-A/GXX	Nes=;%&]G 250 kPa	kX`[Y@nUN 60	<S75($ 100	!k3e\v\| 140
VZ& A%UFC SL21K-500k-A/GXX	\b=Pj!^gwb 500 kPa	:#k &\f-Y 60	_5 ^I.5Z3 100	5{e,L>H< 140
rKH:[lKm SL21K-01M0-A/GXX	XQ%4L-rhN 1.0 MPa	B.r4$:+jb2 60	BVsD( @lX 100	l5xCz=dw 140
CIU1R; SL21K-03M0-A/GXX	[u}(57DS 3.0 MPa	m%;D 60	>MK>gLg}! 100	*Xo]-cKL0 140
tZ`Ts}\e Industrial Line STARe, Piezoresistivechips for pressure measurements of 100 mbar to 400 bar
j>Iaq" IL20L-10k0-GXX	X\$ 0 10 kPa	{@! Kx`(: 30	i) E\|bW; 60	,Ys"W x 120	yz8mP3"c:o mV@5V
eW5SFY. IL20L-35k0-A/GXX	~/^5) g_ 35 kPa	~qe%Yq 40	F 100	{7TlN.( 160
vAY,E=&XvM IL20M-03M0-A/GXX	bVP"(H] 3.0 MPa	n -( 60	JSh.]j<bJL 100	ljl^ GFo 140
6T 8!xyi-+ IL20M-100k-A/GXX	w 4[{2 100 kPa	0TpK#OlI\|c 60	T~QJO0 100	g&/T*L 140
'y8]_K* IL20M-250k-A/GXX	>pUtwIP 250 kPa	`+6R0Ch 60	4pw6bK,s2\ 100	87hq{tTs] 140
=zQN[ IL20M-500k-A/GXX	;M"9$M' 500 kPa	9tF9T\jW 60	YPHS1E? 100	Eke5Nb 140
Ua!aaq& IL20M-01M0-A/GXX	vpmj\|\|\- 1.0 MPa	A}eOFu` 60	95el'K[R 100	I? ,>DHUX 140
Lemui) IL20M-10M0-A/GXX	M4as 10.0 MPa	)1X#*mCxk 200	&b:1I7Cp* 250	8OgLn?"P 300
'],J$ge IL20M-40M0-AXX	>2~=)L 40.0 MPa	]+X@ 7 230	0_88V 290	m*JaXa 350
4?B\O`sy. High Stability Line STARe, Piezoresistivechips for pressure measurements of 60 mbar to 400 bar
GSH>7!.# HS20V-06k0-A/G/D05	F$)[kP,wtO 6 kPa	O({2ivX 60	1I:+MBGin 100	~3<> 3p 140	EFz&N\2 mV@5V
Mo^ od< HS20V-10k0-A/G/D05	~@}Bi@* 10 kPa	M3.do^ss 60	s0vDHkf8 100	E>K!Vrh-L 140
4r45i: HS20L-35k0-A/G/DXX	z4N*b"QF 35 kPa	7Op>i,HZk\ 60	s7F.sg 100	5 sX+~Q 140
0)gdB'9V_ HS20L-100k-A/G/DXX	'dn]rV0(C 100 kPa	nR*ryv 60	W)bLSL]`E 100	T:~vk.Or 140
'tH_p HS20M-250k-A/G/DXX	qi^7 250 kPa	m^zUmrj[ 60	K\|epPGRr 100	`x*Pof!Io 140
Fe4(4 HS20M-500k-A/G/DXX	5?x>9Ca 500 kPa	M!o##* *` 60	Te[n,\Nb 100	F'21jy& 140
lgk.CC HS20M-01M0-A/G/DXX	lNYt`xp 1.0 MPa	8]9%*2"! 60	$\|@ ( 100	HMNLa*CL' 140
H*PSR HS20M-03M0-A/G/XX	, K~}\CR 3.0 MPa	U2W\|:~KM 60	MDnua 100	\\| 8 140
``hf=`We HS20M-10M0-A/GXX	FOE4>zE 10.0 MPa	Hquc o 200	8.O8No:'& 250	K &N 300
e w$B)W HS20M-20M0-A08	uxr #QA 20.0 MPa	sYI-5D] 60	V2wb%;q 100	3[Qxd{8r 140
zBzZxK>$ HS20M-40M0-A08	cK(C&NK 40.0 MPa	)"7iJb<E 60	+V{kb<P 100	9y"@( 140
+nFu\|qM} Harsh Environmental Line, Piezoresistivechips for pressure measurements of 2 bar to 16 bar
_Tm3<o. HE11C-200K-AXX	'-Vt\|O_Q 200 kPa	m#\| 9hMu 60	Swig;` 100	;DfY#- 140	YJT&{jYi mV@5V
Z 2V.3 HE11C-400K-AXX	2K/4Rf0; 400 kPa	.YAT:;L 60	#lL^?\|M 100	P@V0Mi), 140
3YOq2pW72G HE11C-800K-AXX	TrEu'yxy8* 800 kPa	vXrx{5gz 60	}C"%p8=HM 100	s<<ooycBrQ 140
z]_wjYn Z HE11C-01M6-AXX	s+$ Q}\|?u 1.6 MPa	E Nhl&J 60	vc;$-v$& 100	/NI;P]s. 140

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