新势力光电供应雪崩二极管

新势力光电供应雪崩二极管（APD，Avalanchephotodiodes），是一种内部增益机制的光电二极管：蓝光增强型、红光增强型、红外增强型（900nm、1064nm）。该系列雪崩二极管应用广泛，包括：安检设备、激光测距、运动控制、分析仪器、生物医疗、光通信、军事、航空航天、光通讯。备注：如果采购数量10片以上，新势力光电提供配套的驱动电路模块。

#nEL~& Series 11: Blue sensitivity enhanced (forbiomedical applications)
gXK&q Order #	2k+16/T Type		n,nisS Active Area		_!:@w9 Dark Current	MsjnRX:c3u Rise Time
	se,Z#H Chip	j>!sN`dBj Package	( u f5\}x Size	kxo.v\|)8 Area	v*r9j8 M=100	r~oSP^e' 410nm 50Ω
	se,Z#H Chip	j>!sN`dBj Package	cyMs(21 mm	z5EVG mm2	E5{n?e nA	x!?Z*v@I ns
X47Ol 500970	Jsn <,4DO8 AD800-11	0<&M?^ TO52S1	tpU D0Z) Ø0.8	Gvn: c/m; 0.5	!6E:5=L^ 1	h7?.2Q&S 1
fn1pa@P 500967	,so4Lb(vG AD1900-11	Wc;+2Hl[@ TO5i	'v`_Ii\|- Ø1.95	J@` 8(\( 3	^<;w+%[MT 5	BXA]9eK 2
1+^n!$ Series 12: Red sensitivity enhanced(cut-off frequency up to 3 GHz)
e?<D F.Md+ Order #	evOb Type		U**)H_S/~ Active Area		KjYDFrR4 Dark Current	uF<S Rise Time
	*<k&#D"m Chip	c[{UI Package	('d{t:TsY Size	rfTe Area	xjrlc9 660nm M=100	<gcmsiB\| 660nm 50Ω
	*<k&#D"m Chip	c[{UI Package	DMMLzS0A mm	[&daG: mm2	!KDr`CV& A/W	5_aw.s> GHz
T*\$<-^ 501828	;+/NjC1 AD100-12	} J(1V!EA LCC6.1	~B]jV$= Ø0.1	F[`vH 0.008	/e<5Np\X 50	Ff)@L-Y\K typ.3, min.2
G>0)I 501829	k<Oy%+C AD100-12	*(nJX.7 LCC6.1f	qUg9$oh{LI Ø0.1	4:`[qE3 0.008	ai^t= s 44	H:Lt$ typ.3, min.2
' =}pxyg 501831	yjd(UWE AD100-12	~me\ TO52S1	ucM.Ro=@ Ø0.1	)JX$/- RD- 0.008	zn^v!:[ 50	0BDoBR typ.3, min.2
mt^`1ekoY 501157	N(BiOLZL6 AD230-12	9m~t j_ LCC6.1	GEfY^!F+ Ø0.23	3W'FcE)\|E 0.042	Y"oDFo, 50	g8v[)o(qd typ.3, min.2
ZM 8U]0[X 501156	Ge1duRGa AD230-12	{\Ys@FF LCC6.1f	Dt\|fDw$]D Ø0.23	L]*`4L 0.042	}Az'Zu4 = 44	ki4Xp'IK typ.3, min.2
dFMAh&:> 501820	,\}k~ U99 AD230-12	l# BZzJ?~ LCC6.1f	GVZTDrC Ø0.23	L?Tu)<Mn 0.042	Oc~VHT 44	1~L\s}\|2d typ.3, min.2
l{QC}{Ejc2 501162	:fW.-^"VP AD230-12	*F..ZS'$[ TO52S1	`OBl:e Ø0.23	V:8@)Hc= 0.042	J7Sx!PQ 50	[brkx3h typ.3, min.2
01o [!nT 501155	Ta^.$O=F AD500-12	tbS#^Y LCC6.1	;tXY = Ø0.5	FF jRf 0.196	/wlFD,+8 50	d96fjj~ typ.3, min.2
^} tuP 501154	)Z&HuEg{ZR AD500-12	{F/q{c~] LCC6.1f	xjE7DCmA Ø0.5	K,]woNxaw 0.196	<oQ6ZX 44	wZ O@J\| typ.3, min.2
VH[l\I(h 501819	Z"]xdOre AD500-12	8M~u_`6 LCC6.1f	!L/tLHk+ Ø0.5	4NJVW+:2 0.196	R7,pukK 44	Z\|}H^0~7S typ.3, min.2
IE\|,~M2 501163	{x\|MA(NO AD500-12	k}#@8n\|b TO52S1	^SgN(-QH Ø0.5	y1nP F&_ 0.196	i"vDRrDe 50	y]w )`}Ax typ.3, min.2
#U:0/4P( Series 8: Optimized for high cut-offfrequencies-850 nm (optimized for high speeds)
\|K6nOX!i Order #	uRFNfX(* Type		X:DMT>5k Active Area		=I7[L{+~Y Dark Current	J#+Op/mmo Rise Time
	M.X}K7Z_/ Chip	$G)&J2zL Package	\Ec X!aC Size	} mgVC Area	am3V9"\ M=100	UC.8DaIPN M=100 20V 50Ω
	M.X}K7Z_/ Chip	$G)&J2zL Package	Z`\|>tbOfZ mm	9OH.&g mm2	Cy]" nA	"--/v. Cs ns
e5QOB/e& 501810	2lF WW( AD100-8	C"k2<IE LCC6.1	GpScc'a7 Ø0.1	IcRM4Ib))Q 0.008	%s]U@Ku(a 0.05	XadG\_?t` <0.18
W31LNysH!; 501811	N!]PIWnC AD100-8	-?[O"D"c LCC6.1f	RzMA\r;# Ø0.1	t$tsWAmiA[ 0.008	ZBPd(;"x+ 0.05	{`($Q$Q1 <0.18
*Rz!i m\| 501812	O}e\|P~W AD100-8	b$PT_!d LCC6.1f	/5&3WG&<u Ø0.1	&~z+R="= 0.008	8.:B=A 0.05	+Kxe ymwr2 <0.18
<Sz>ZIISd 500011	?a*fy}A\| AD100-8	6s> sj7 TO52S1	.i1jFwOd\|G Ø0.1	0~Um^q*'3 0.008	@?'t@P:4 0.05	vd2uD2%con <0.18
lpIteZw: 501171	cdd P T AD100-8	BERn _5gb TO52S3	"bv,I-\ Ø0.1	8XLxT(YFIs 0.008	Xw&QrTDS` 0.05	SD)5?{6< <0.18
F<6KaZ\| 501078	=x\|##7 AD230-8	?j &V:kF LCC6.1	53g8T+`\( Ø0.23	e-L5=B 0.04	QC$=Fs5+ 0.3	<1;,B%_^ 0.18
ls8olLM> 501079	h;cB_6vt AD230-8	Z!q2F%02FO LCC6.1f	M Ak-=?t Ø0.23	7j9D;_(.^$ 0.04	z^gDbXS 0.3	(mD-FR@# 0.18
">0/>>Ry 501805	z&>9 s)^- AD230-8	tJ(c<:zD LCC6.1f	xiOv$.@q Ø0.23	8:3oH!n 0.04	TFiuz;*\| 0.3	w>H%[\Qs 0.18
>S?C {_g 500019	&0;{lS[N:L AD230-8	23B^g TO52S1	>/*?4 Ø0.23	l<0[ K( 0.04	rw}5nv 0.3	=]5DYRhX] 0.18
SK2J`* 500022	?{ 8sT-Z-L AD230-8	(hRgYwUa< TO52S3	Z9;nC zHm Ø0.23	e')&ODQ H 0.04	j. ks UJ 0.3	)7Hon 0.18
$ ufSNx(F 501496	YW4bm AD230-8	dy8In% ODFN2x2	n)1 Ø0.23	\|p=.Gg=2 0.04	B $ y44 0.3	,oBk> 0.18
-N-4l 501077	8JjU 9# AD500-8	%%-U. LCC6.1	M<M#<kD Ø0.5	HwVgT" 0.2	OI]K_ m3 0.5	}v'PY/d. 0.35
&4[#_(pk 501076	}LHT#{+x AD500-8	k^'d@1z;C LCC6.1f	<x>k3bD Ø0.5	N18diP[C 0.2	.JD4gF2N 0.5	E{+c*sz 0.35
%1 VNP(E 501809	O0=,&=i AD500-8	>2/wzsW LCC6.1f	b*6c.o Ø0.5	"M5ro$qZ} 0.2	0c\\|S>g[ 0.5	#0YzPMV 0.35
jV\|$? Rcl% 500030	==e#CSJq AD500-8	G\,A> mT/P TO52S1	yTq(x4] Ø0.5	}G,SqpcG 0.2	{Y@-*pL] 0.5	:)+@qxTy 0.35
kb}]sj 500305	Fgc:6<MGM AD500-8	\$~oH3m& TO52S2	gQk#l\w_ Ø0.5	jN'fm 0.2	qeK 0.5	d6d(?" 0.35
$E9daUt8"J 500155	x4HMT/@AG2 AD500-8	!+\|N<` TO52S3	G(\|(y=ck Ø0.5	+N(YR3 0.2	~a8G 5M 0.5	EB3o8 0.35
sKB-7 500947	/nD0hb AD800-8	[;V1y`/K1 TO52S1	M:1F@\< Ø0.8	sKG~<8M} 0.5	X?}GPA4 W 2	l"pz )$eE 0.7
Uc4L\|: 501117	J!K/7uS AD1100-8	EBL,E:_) TO52S1	TLL[F;uZ Ø1.13	O"s`-OM;n 1	^s(X VVA 4-6	aa YQ< 1
{ d2f)ra. 500015	!K^Z5A_; AD1900-8	7s fuju( TO5i	}A'<?d8 Ø1.95	U37?P7i's 3	#+ lq7HJ1 15	<11Tqb 1.4
,,H$>r_; 501194	#ZnX6=;X AD3000-8	vhquHy.qi# TO5i	I9G*iu=U Ø3	\\|>`z,; 7.07	n.qxxzEN 30	/%q9hI 2
~ GT\RAj[ 500160	!9<RWNKV)Y AD5000-8	DEwtP TO8i	vyx\N{ Ø5	QB\|fFj58u 19.63	DGfQo5# 60	io33+/ 3
:iNAXy 500002	U!I_i*:U AD230-8-2.3G	Md?bAMnG+} TO5	16> >4U:Y AD230-8-2.3GTO5 is a high frequency optical data receiver comprising an Avalanche SiliconPhotodiode and a transimpedance amplifier in a hermetically sealed TO5package.
,vdP #: 500003	3w:Z4]J AD500-8-1.3G	L9YwOSb. TO5	v7OV;ea$ AD500-8-1.3GTO5 is a high frequency optical data receiver comprising an Avalanche SiliconPhotodiode and a transimpedance amplifier in a hermetically sealed TO5package.
_}9R} Series 9: NIR sensitivity enhanced-900nm(specifically for LIDAR and laser rangefinders)
\/4%[Q2QDm Order #	tD0>(41K Type		oY6\|h3T=Q$ Active Area		E+c3KqM Dark Current	\|tJ%:`DGw Rise Time
	nIDsCu=A Chip	UoS;!}l Package	'>mb@m Size	?*mbce[ Area	Di"9 M(6vf M=100	XQY&4tK M=100
	nIDsCu=A Chip	UoS;!}l Package	)?IA`7X mm	_5S$mc8K0 mm2	F*]. nA	.&}4 ns
u`Qcw\|R+ 501815	hSKH#NS AD100-9	hYv 6-5_ LCC6.1	Aag)c~D Ø0.1	jv=f@:[`I 0.008	-+_aL4. 0.1	Tocdh.H\| <0.5
7>@/*S{X 501816	n@,eZ! AD100-9	;AB,:* LCC6.1f	=yhfL2`aw Ø0.1	Lz{T8yvZ 0.008	!=:MG#p 0.1	jLS]^\| <0.5
W (c\$2` 501123	O8N0]Mz AD230-9	&r5%WRzpYT LCC6.1	-x\l<\* Ø0.23	Hg_ XD, 0.04	si.a]k/f 0.5	RYJc> 0.5
a&aIkD 501817	WJ4UJdf' AD230-9	=}GyI_br;8 LCC6.1f	8[`<u[Iv Ø0.23	UXB8sS*wQ? 0.04	5 ^J8<s@_ 0.5	+pViHOJu&V 0.5
I"<. h' 500020	U105u.#7 AD230-9	35kbE' TO52S1	s^R2jueR Ø0.23	7:q-NzE\6 0.04	*"sDaN0@R 0.5	A?k,}~ 0.5
+9rbQ?' 501265	HFWm}vA: AD230-9	c!wB'~MS# TO52S1F2	w/W?/1P>q Ø0.23	@5VZ 0.04	5d{Ggg{s 0.5	kR?n%`&k 0.5
rPvX8*)tV 500023	n(Op< AD230-9	7:E#c"S q TO52S3	}eFUw Ø0.23	Ki;5 =) 0.04	x)Kh_G 0.5	yzb& 0.5
Awf=yE: 501122	q ? TI, AD500-9	Nh/ArugP5P LCC6.1	Pm;*Jv% Ø0.5	<f{`}drp/ 0.2	5MU@g*gj,C 0.8	>Nl~"J\|]q 0.55
l8us6 501818	_?LI0iIFx AD500-9	I19F\ L`4 LCC6.1f	"dOY_@kg Ø0.5	Qh%vh;\|^ 0.2	>.~k?_Of 0.8	jt?%03iuk 0.55
_!1c.[\T 500031	@\|A&\a-"J AD500-9	3edK$B51; TO52S1	vJ} Ø0.5	cty#@?"e 0.2	jF85bb$ 0.8	LgKEg90w( 0.55
I3b-uEHev 500590	lfd{O7L0b AD500-9	yN%Pe:R TO52S1F2	aJ;R8(*;\ Ø0.5	RVy87_J1 0.2	<_uv!N 0.8	{z ~ ' 0.55
\9Zfu4WR 500306	U<byR!qLie AD500-9	o\|E(_Y4d TO52S2	~3]8f0^%m Ø0.5	5*Iz3vTq 0.2	!gQ(1u\|r 0.8	8#-}3~l[ 0.55
:\We =oX 500156	<rxem(PPu AD500-9	e$I:[> TO52S3	:PkSX*E[q Ø0.5	`&JA7UD> 0.2	Ia" Mi+{ 0.8	hV>Ey^Ty 0.55
13 p0w 501196	NPabM(<` AD800-9	1h{_v!X TO52S1	hUc\|Xm Ø0.8	`?m(Z6' 0.5	g;@PEZk1 2	EJY:C9W 0.9
ePdzQsnVe 501197	{ )K(}~VD AD1100-9	"E#%x{d TO52S1	%&GQ]pmcY Ø1.13	N?:S?p9R@ 1	=2'^:4Z 4	cH ?]uu( 1.3
mAKi%) 501208	oaE3Aa AD1500-9	\|3@]5f& TO5i	_: x$"i Ø1.5	=B2=UF 1.77	S_=uv)%a 2	x$sQ .aT 2
I`1=VC]^8 501198	r?*?iw2g AD3000-9	)qe o`4+y TO5i	>dY"B$A> Ø3	*x!5I$~J 7.07	huE#VY /t 30	nK$m:= 2
]T`qPIf;yJ 500161	A}# Mrb AD5000-9	_>l,%n TO8i	aleIy}" Ø5	Oylw,*% 19.63	G#>X~qk() 60	eS\|p3jk; 3
4B]a8 500756	uOx$@1v, AD230-9-400M	-TWo-iu^ TO5	5`Z#m:+u AD230-9-400M-TO5 is a high frequency optical data receivercomprising an Avalanche Silicon Photodiode and a transimpedance amplifier ina hermetically sealed TO-5 package.
glpdYg * 500490	j!/(9*\ AD500-9-400M	usip>y TO5	Lb/_ULo6-V AD500-9-400M-TO5 is a high frequency optical data receivercomprising an Avalanche Silicon Photodiode and a transimpedance amplifier ina hermetically sealed TO-5 package.
),eiJblH Multi-Element Array
]]4E)j8 501099	B~IOM 8AA0.4-9	XDF",N) SOJ22GL	zb(u?U APD Array 8 Elements, QE>80% at760-910nm with NTC
>v{m^\|QqB 501098	_ev^5`>p/ 16AA0.13-9	A(B2XBS!? SOJ22GL	:H{8j}" APD Array 16 Elements, QE>80% at760-910nm with NTC
'*:YC 500038	Ho/5e*X 16AA0.13-9	w;"'l]W DIL18	V/SI E8 APD Array 16 Elements, QE>80% at760-910nm
zob-z==' 501097	)mU)7@! 16AA0.4-9	\|V&k1{V SOJ22GL	%lxo?s@GE APD Array 16 Elements, QE>80% at760-910nm
\|(fWT}tg 50130802	V/Tp&+Z.c 25AA0.04-9	C-7.Sa BGA	sC j3h APD Array 25 (5×5) elements, QE>80% at760-910nm with PTC
(\|-/S0AV 50130802	+^.(3Aw 25AA0.16-9	:;EzvRy BGA	%<klz)!t APD Array 25 (5×5) elements, QE>80% at760-910nm with PTC
Jad'8}0J 50130702	+W}f0@#)< 64AA0.04-9	0\|cQx VJb BGA	sbVeB%k APD Array 64 (8×8) elements, QE>80% at760-910nm with PTC
SE\`JGA[ 501207	C5m*pGImG QA4000-9	'=r.rW5 TO8Si	Vj_ $%0 Quadrant Avalanche Photodiode, QE>80%at 760-910nm
1\BECP+ Series 10: NIR sensitivity enhanced -1064nm (specifically for laser rangefinders, targeting systems or anyapplications using YAG lasers or similar NIR radiation sources)
Sb<=ROCg@ Order #	nV<YwqK Type		]ba<4:[Go Active Area		-Fb/GZt\| Dark Current	</eh^<_~ Rise Time
	"_^FRz#h Chip	#M:W?&. Package	c;Li~FLR Size	ve$P=ZuM Area	<J- aq;p M=100	u5lj+? M=100 1064nm
	"_^FRz#h Chip	#M:W?&. Package	7>.^GD mm	)2a!EEHz mm2	ZnQnv@{8l nA	Z/64E^ ns
C'{Z?M> 500953	GovGh? X#x AD500-10	JO _a+Yl TO5i	'?QZ7A Ø0.5	J%nJO3, 0.2	#pf}q+A 1.5	{MIs%w.G 4
k07O.9> 501233	C?zC\|0 AD800-10	Dj[D\|%9a TO5i	W?.Y%wc0 Ø0.8	> vgqf>)kk 0.5	\|/q*Fg[f 3	1j}o.0\ 5
/GEqU^ B 500883	zj8;ENhEI AD1500-10	\PL92HV TO5i	?g9CeeH* Ø1.5	~Su>^T(?- 1.77	J?%Z7&/M> 7	ek.L(n,J\| 5
rA!`e 50123401	^E5Xpza AD4000-10	,]o32@ TO8Si	0evG Ø4	] $5rh8 12.56	%!WQ;( 50	3B>!9:w~f 6
\|gT$M_} 501387	>b/Yg:t AD800-10	olh\|.9Kdj} TO8S	?vvjwys@ High speed, high gain, low noise, lowpower consumption hybrid (AD800-10+TIA)
bvAO(` Multi-Element Array
wZ29/{, 501174	+&JF\|#FQ` QA4000-10	ww=< = TO8Si	:I1bGa&I Quadrant Avalanche Photodiode, High QE at850-1070nm

如有需要，可直接联系我们，也可以登录官网查找所需要的产品：
网址：http://www.newopto.com
邮箱：Sales@NewOpto.com
手机：188-5711-5252
电话：0571-85152711

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