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newopto 2014-11-13 11:40

新势力光电供应雪崩二极管

新势力光电供应雪崩二极管（APD，Avalanchephotodiodes），是一种内部增益机制的光电二极管：蓝光增强型、红光增强型、红外增强型（900nm、1064nm）。该系列雪崩二极管应用广泛，包括：安检设备、激光测距、运动控制、分析仪器、生物医疗、光通信、军事、航空航天、光通讯。备注：如果采购数量10片以上，新势力光电提供配套的驱动电路模块。 T!^v^m@>y  
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Series 11: Blue sensitivity enhanced (forbiomedical applications)
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Order #		 ocpM6b.fK  
Type		 ]a[2QQ+g  
Active Area		 UoSc<h|  
Dark Current		 u0qTP]  
Rise Time
8;,|z%rS"  
Chip		 )a%E $`   
Package		 sG^{ cn  
Size		 O2U}jHsd  
Area		  J2Qt!-  
M=100		 8~BLTZ  
410nm 50Ω
5Y@Hb!5D  
mm		 Deq@T {  
mm2		 7=&+0@R#/d  
nA		 3/]~#y%2  
ns
~c*kS E2X  
500970		 @![1W@J  
AD800-11		 Zvra >%  
TO52S1		 QcjsQTAbk  
Ø0.8		 !HeQMz  
0.5		 XK;Vu#E*^  
1		 NW&2ca  
1
BQs\!~Ux2  
500967		 \c!e_rZ  
AD1900-11		 en6;I[\  
TO5i		 X}ihYM3y/  
Ø1.95		 V0%a/Hi v  
3		 :lK8i{o  
5		 lAo4)  
2
Y)#,6\=U  
Series 12: Red sensitivity enhanced(cut-off frequency up to 3 GHz)
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Order #		 1{1mL-I;  
Type		 +I}!)$/  
Active Area		 0r?]b*IEK  
Dark Current		 *nv ^s  
Rise Time
?D(aky#cyc  
Chip		 Fzn !  
Package		 |qU~({=b  
Size		 !Y/S2J  
Area		 =F5zU5`i  
660nm M=100		 /_yAd,^-+  
660nm 50Ω
kUr/*an  
mm		 kxmsrQ>av  
mm2		 <q&i"[^M  
A/W		 bw!*=<  
GHz
7 h>,  
501828		 W*,$0 t  
AD100-12		 ih |&q  
LCC6.1		 xqauSW  
Ø0.1		 [<>%I#7ulG  
0.008		 s{42_O?,c  
50		 by$mD_sr  
typ.3, min.2
g!)*CP#;  
501829		 iP1yy5T  
AD100-12		 |3hNTH?  
LCC6.1f		 m6Qm }""  
Ø0.1		 Qv)DSl  
0.008		 57_AJT hR  
44		  RcZ&/MY  
typ.3, min.2
|D[LU[<C  
501831		 _:Jma  
AD100-12		 Sw>,Q-32  
TO52S1		 AtqsrYj  
Ø0.1		 x1" 8K  
0.008		 `3z6y& dmx  
50		 e+?;Dc-SJ\  
typ.3, min.2
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501157		 $J0o%9K   
AD230-12		 -a'D~EGB^  
LCC6.1		 NL'(/|)  
Ø0.23		 tqL2' (=  
0.042		 Zm+GH^f'  
50		 .}E@ 7^X  
typ.3, min.2
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501156		 AE Abny q  
AD230-12		 aPX'CG4m  
LCC6.1f		 &G?w*w_n  
Ø0.23		 *q@3yB}  
0.042		 OU*skc>  
44		 }|nEbM]#  
typ.3, min.2
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501820		 Oe;1f#` 5  
AD230-12		 `9A`pC  
LCC6.1f		 r&~]6 U  
Ø0.23		 /XdLdA!v  
0.042		 48{B}j%oU  
44		 P!{J28dj  
typ.3, min.2
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501162		 //bQD>NBO  
AD230-12		 n;>r  
TO52S1		 .Y }k@T40a  
Ø0.23		 s~c cx"HH  
0.042		 cb/$P!j7  
50		 vorb?iVf>  
typ.3, min.2
X<f4X"y  
501155		 : z\||f  
AD500-12		 H)Z$j&S{  
LCC6.1		 m]}EVa_I`/  
Ø0.5		 .Vs|&c2im  
0.196		 PeSTUR&  
50		 7UUu1"|a|  
typ.3, min.2
3w/z$bj  
501154		 #fXy4iL l  
AD500-12		 q3|SZoN  
LCC6.1f		 qVvnl  
Ø0.5		 z$VVt ?K  
0.196		 V=Z%y$1Bc  
44		 ^__ P;Gr`  
typ.3, min.2
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501819		 {#&D=7LP  
AD500-12		 E_{P^7Z|Jg  
LCC6.1f		 @[Wf!8_  
Ø0.5		 INRRA  
0.196		 BLm}mb#/{  
44		 SzG?m]  
typ.3, min.2
|_a^+!P  
501163		 W~s:SN  
AD500-12		 |Vp ?  
TO52S1		 .fK~IKA  
Ø0.5		 8rNf4]5@X(  
0.196		 %PPkT]~\  
50		 !HXyvyDN  
typ.3, min.2
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Series 8: Optimized for high cut-offfrequencies-850 nm (optimized for high speeds)
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Order #		 ;h#Q!M&e#  
Type		 *~.'lE%[U  
Active Area		 G+m[W  
Dark Current		 q~{O^,4S  
Rise Time
WJ\,Y} J  
Chip		 =~q$k  
Package		 f^Q)lIv  
Size		 5{-54mwo  
Area		 X#X/P  
M=100		 #=Whh 9-d  
M=100 20V 50Ω
*#GX~3A  
mm		 [5GzY`/m  
mm2		 <B+ WM  
nA		 %B\VY+  
ns
Z,>owoP4  
501810		 )?( _vrc<  
AD100-8		 *QoQ$alHH  
LCC6.1		 a24(9(yh  
Ø0.1		 ^ JU#_  
0.008		 z\K-KD{Ad  
0.05		 oF s)UR  
<0.18
gj }Vnv1[  
501811		 ? O9|  
AD100-8		 t*-_MG  
LCC6.1f		 Z/OERO   
Ø0.1		 Z[kVVE9b?  
0.008		 i1Y<[s  
0.05		 O44Fj)  
<0.18
~6[3Km|2  
501812		 ]zI*}(adu  
AD100-8		 }'uV{$  
LCC6.1f		 V}h)e3X  
Ø0.1		 k:&B b"  
0.008		 ) gxN' z  
0.05		 :S+Bu*OyH  
<0.18
+t(Gt0+  
500011		 >ffQ264g=i  
AD100-8		 ^+Vf*YY 8  
TO52S1		 iq5-eJmq  
Ø0.1		 S AKIFNE  
0.008		 DyRU$U  
0.05		 %~N| RSec  
<0.18
Bey9P)_Of  
501171		 f;b f R&v  
AD100-8		 z/pxZ B ~"  
TO52S3		 E .CG  
Ø0.1		 yz%o?%@  
0.008		 RuOse9  
0.05		 zOis}$GR  
<0.18
T~d_?UAw$  
501078		 gbFHH,@  
AD230-8		 +y 48.5  
LCC6.1		 0 l+Jq  
Ø0.23		 H)X&5E  
0.04		 < WQ ~X<1D  
0.3		 2WB`+oWox  
0.18
+_ $!9m  
501079		 N \woFrG  
AD230-8		 3k:`7E.  
LCC6.1f		 Q|7m9~  
Ø0.23		 "?'9\<>  
0.04		 OS=~<ba  
0.3		 dfXBgsc6i  
0.18
HzAw rC  
501805		 s =<65  
AD230-8		 ziv*4  
LCC6.1f		 `F_R J.g*p  
Ø0.23		 lXutZ<S[  
0.04		 h~ehZJys  
0.3		 eo&G@zwN   
0.18
@/='BVb'T  
500019		 *d-JAE  
AD230-8		 L$@qEsO  
TO52S1		 XM`&/)  
Ø0.23		 xN!In-v[j;  
0.04		 zOYG`:/'  
0.3		 j 5bHzcv  
0.18
}eSrJgF4M  
500022		 <9S5  
AD230-8		  )eH?3""  
TO52S3		 ,2mq}u>WU  
Ø0.23		 E=ObfN"ge  
0.04		 m~gcc  
0.3		 <Kk?BRxi  
0.18
NZ% v{?  
501496		 +)_#j/  
AD230-8		 l=<},_]{  
ODFN2x2		 =0>[-:Z  
Ø0.23		 P}he}k&IR  
0.04		 5e^z]j1Yv  
0.3		 USKC,&6&}  
0.18
{`9J8qRY  
501077		 n m.5!.  
AD500-8		 Q5*"t*L!N  
LCC6.1		 gj4ONmY  
Ø0.5		 J$S*QCo  
0.2		 _RWH$L9  
0.5		 5-:H  
0.35
dA0o{[o=  
501076		 dlwOmO'Bm)  
AD500-8		 8o466m6/  
LCC6.1f		 A" IaFXB  
Ø0.5		 zT'(I6 S:)  
0.2		 :#=B wdC  
0.5		 \OkJX_7  
0.35
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501809		 dlMjy$/T  
AD500-8		 N"zl7.E  
LCC6.1f		 <,J O  
Ø0.5		 -5@hU8B'a  
0.2		 jOL=vG  
0.5		 gj82qy\:  
0.35
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500030		 /pJr%}sc  
AD500-8		 Zk5AZ R!|  
TO52S1		 `* cJc6  
Ø0.5		 @QDpw1;V'  
0.2		 y_T%xWK5  
0.5		 <4N E)!#  
0.35
WmE4TL^8?  
500305		 H^g&e$d0  
AD500-8		 "|/q4JN)7d  
TO52S2		 {T3wOi  
Ø0.5		 afjEN y1  
0.2		 7Kt i&T  
0.5		 LftzW{>gI"  
0.35
~$YasFEz  
500155		 #y1M1Og  
AD500-8		 Rj-4K@a8#N  
TO52S3		 bs)Ro/7}  
Ø0.5		 ^ j<2s"S  
0.2		 m [BV{25  
0.5		 P,k=u$  
0.35
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500947		 'i 8`LPQ  
AD800-8		 zvT8r(<n}  
TO52S1		 |C7=$DgwY  
Ø0.8		 v5.KCc}"  
0.5		 W&2r{kCsQ  
2		 vH6.;j'^  
0.7
t]xR`Rr;X  
501117		 Q>uJ:[x+  
AD1100-8		 Z;6?,5OSc  
TO52S1		 TZarI-A  
Ø1.13		 XKvH^Z4h{l  
1		 3*eS<n[uG  
4-6		 3*oZol/  
1
ZJHaY09N  
500015		 K%;=i2:  
AD1900-8		 J?f7!F:8  
TO5i		 A9LVS&52  
Ø1.95		 COA>y?  
3		 c`7dNx  
15		 vP,$S^7$  
1.4
EHrr}&  
501194		 H)5"<=]  
AD3000-8		 8 LsJ}c  
TO5i		 _: !7M ^IU  
Ø3		 2QKt.a  
7.07		 l2kUa'O-  
30		  `dIwBfg_  
2
@[]#[7  
500160		 _Pn 1n  
AD5000-8		 7~VDk5Z6  
TO8i		 ;t4YI7E*  
Ø5		 Gl9 ,!"A  
19.63		 BxesoB  
60		 LmPpt3[  
3
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500002		 "MyMByomQ  
AD230-8-2.3G		 {}BAQ9|q  
TO5		 @R;&PR#5  
AD230-8-2.3GTO5 is a high frequency optical data receiver comprising an Avalanche SiliconPhotodiode and a transimpedance amplifier in a hermetically sealed TO5package.
MZ>Q Rf  
500003		 k!d<2Qp W  
AD500-8-1.3G		 i~rb-~o  
TO5		 BVS SO's  
AD500-8-1.3GTO5 is a high frequency optical data receiver comprising an Avalanche SiliconPhotodiode and a transimpedance amplifier in a hermetically sealed TO5package.
RJdijj  
Series 9: NIR sensitivity enhanced-900nm(specifically for LIDAR and laser rangefinders)
q<4{&omUJ  
Order #		 STz@^A  
Type		 EEiWIf&S,  
Active Area		 uz;eY D  
Dark Current		 vZXdc+2l  
Rise Time
Fp>nu_-"  
Chip		 NdC5w-WY  
Package		 bl#6B.*=  
Size		 ,?wxW  
Area		 {5c]\{O?[  
M=100		  Au*1-  
M=100
}Zfi/^0U  
mm		 z<8VJZd  
mm2		 Us% _'}(/U  
nA		  I^G6aw  
ns
8[:G/8VI  
501815		 hd)WdGJp  
AD100-9		 m,ur{B8 :  
LCC6.1		 o+Q2lO5  
Ø0.1		 c-4z8T#M^  
0.008		 \xmDkWzE  
0.1		 qf{HGn_9~1  
<0.5
kA9k^uR/  
501816		 $dug"[  
AD100-9		 j3j^cO[8v  
LCC6.1f		 Ti>}To}B5  
Ø0.1		 JX`>N(K4\  
0.008		 :bXTV?#0  
0.1		 ;Pvnhy  
<0.5
A:5P  
501123		 mB%m<Zo\U  
AD230-9		 ..=lM:13|  
LCC6.1		 -jVg {f!  
Ø0.23		 "e/"$z'ca  
0.04		 >S%}HSPKq  
0.5		 )M@^Z(W/a  
0.5
15MKV=?oY  
501817		 =nlj|S ~3  
AD230-9		 ,q$2D,dz  
LCC6.1f		 Hro)m"  
Ø0.23		 j?VHR$  
0.04		 ^MVOaV65  
0.5		 S`vw<u4t  
0.5
S KGnx  
500020		 #hXuGBZEI  
AD230-9		 .ZM0cwF  
TO52S1		 ?"@SxM~\  
Ø0.23		 L5CnPnF  
0.04		 }TDq7-(g  
0.5		 4v2JrC;  
0.5
'Y]<1M>.g  
501265		 v+CW([zAx#  
AD230-9		 milQxSpj  
TO52S1F2		 .:tR*Kst`7  
Ø0.23		 6mjD@  
0.04		 b(> G  
0.5		 ^[v>B@p*{  
0.5
|RDE/  
500023		 A@reIt  
AD230-9		 l>)+HoD  
TO52S3		 8DFq eY0S  
Ø0.23		 FV%|*JW[;N  
0.04		 ^b*ub(5Ot  
0.5		 ~O 4@b/!4  
0.5
4ZB]n,pfT  
501122		 mOFp!(  
AD500-9		 b)T6%2  
LCC6.1		 {6F]w_\  
Ø0.5		 h{ eQ\iI  
0.2		 x(rl|o  
0.8		 u Npa2{S'  
0.55
P5'VLnE R{  
501818		 M* dou_Q  
AD500-9		 qnO/4\qq  
LCC6.1f		  0 - u,AD  
Ø0.5		 D?"Q)kVuD  
0.2		 $C8s  
0.8		 %@%~<U)W  
0.55
ca%XA|_J  
500031		 ^;@!\Rc  
AD500-9		 Ex{;&UWm  
TO52S1		 ictOC F  
Ø0.5		 ,_:6qn{  
0.2		 ZV[-$  
0.8		 axv-U dE;  
0.55
RMAbu*D0  
500590		 f1t?<=3Ek<  
AD500-9		 d)0 hAdh  
TO52S1F2		 :{?Pq8jP  
Ø0.5		 Ljk0K3Q6>  
0.2		 +lJD7=%K]Z  
0.8		 B:)vPO+ d  
0.55
H#QPcp@  
500306		 [LSs|f  
AD500-9		 ; $UB@)7%  
TO52S2		 T"E%;'(cp)  
Ø0.5		 dz?Ey~;M  
0.2		 5_SxX@fW %  
0.8		 Fh.Z sPn,m  
0.55
4*Z>-<W=  
500156		 fjS#  
AD500-9		 S|_lb MZM  
TO52S3		 dVBr-+  
Ø0.5		 5WI0[7  
0.2		 ?<soX8_1  
0.8		 N ^H H&~V  
0.55
r7v 1q  
501196		 2O`s'&.h  
AD800-9		 $"Nqto~  
TO52S1		 ~uJO6C6A  
Ø0.8		 m_UzmWF  
0.5		 9>d~g!u=  
2		 q)]S:$?BT  
0.9
+VHo YEW  
501197		 _u;34H&/  
AD1100-9		 0f,Ii_k bT  
TO52S1		 3L;&MG=  
Ø1.13		 M_\)<a(8  
1		 `R:HMO[ow  
4		 " R-Pe\W  
1.3
Q_A?p$%;L  
501208		 QkY;O<Y_  
AD1500-9		 HuajdC~  
TO5i		 Fh^Ax3P(  
Ø1.5		 )7iYx{n  
1.77		 2tdr1+U?g  
2		 |z.Ov&d4)(  
2
wTVd){q`.  
501198		 /Y*6mQ:  
AD3000-9		 2@pEuB3$?!  
TO5i		 8MCSU'uQ  
Ø3		 fngk<$lvg  
7.07		 Y_M3-H=0  
30		 3?yq*uE}  
2
= p$:vW  
500161		 gz`P~7-w:  
AD5000-9		 <>[]- Vq  
TO8i		 bOdyrynh  
Ø5		 M\bea  
19.63		 08;t%[R  
60		 > 0NDlS%Q:  
3
+FtL_7[v  
500756		 R>`TV(W`9  
AD230-9-400M		 Z$ Mc{  
TO5		 /Wm3qlv  
AD230-9-400M-TO5 is a high frequency optical data receivercomprising an Avalanche Silicon Photodiode and a transimpedance amplifier ina hermetically sealed TO-5 package.
RyN?Sn5)  
500490		 Ck^jgB.7  
AD500-9-400M		 iCZ1ARi  
TO5		 >[TJ-%V>oR  
AD500-9-400M-TO5 is a high frequency optical data receivercomprising an Avalanche Silicon Photodiode and a transimpedance amplifier ina hermetically sealed TO-5 package.
NFlrr*=t>  
Multi-Element Array
c^BeT;  
501099		 YDo,9  
8AA0.4-9		 mi$*,fz  
SOJ22GL		 [}=/?(5  
APD Array 8 Elements, QE>80% at760-910nm with NTC
Lw #vHNf6  
501098		 UNd+MHE74I  
16AA0.13-9		  9/R<,  
SOJ22GL		 7%Ii:5Bp  
APD Array 16 Elements, QE>80% at760-910nm with NTC
he1W22  
500038		 '5m`[S-IU  
16AA0.13-9		 FQ6{NMz,h  
DIL18		 9Y-6e0B:  
APD Array 16 Elements, QE>80% at760-910nm
Zk75GC  
501097		 9mfP9  
16AA0.4-9		 <bxp/#6D  
SOJ22GL		 s9}VnNr  
APD Array 16 Elements, QE>80% at760-910nm
X |X~|&j  
50130802		 b0"R |d[i  
25AA0.04-9		 qox31pnS  
BGA		 ' CO3b,  
APD Array 25 (5×5) elements, QE>80% at760-910nm with PTC
]NgEN  
50130802		 :6X?EbXhK  
25AA0.16-9		 =f{YwtG  
BGA		 gay6dj^  
APD Array 25 (5×5) elements, QE>80% at760-910nm with PTC
M4(`o^n  
50130702		 Cz1o@ rt  
64AA0.04-9		 Um\_G@  
BGA		 w0N8a%  
APD Array 64 (8×8) elements, QE>80% at760-910nm with PTC
 h2]gA_T`  
501207		 |qTS{qQh{L  
QA4000-9		 gw);b)&mx  
TO8Si		 I4"U/iL51  
Quadrant Avalanche Photodiode, QE>80%at 760-910nm
B\} B H  
Series 10: NIR sensitivity enhanced -1064nm (specifically for laser rangefinders, targeting systems or anyapplications using YAG lasers or similar NIR radiation sources)
nPS:T|*G  
Order #		 dY%>C75O  
Type		 .kkrU  
Active Area		 -v7O*xm"  
Dark Current		 EzDQoN7Em  
Rise Time
IHlTp0?  
Chip		 woCFkO;'O  
Package		 |ydOi&  
Size		 H%AC *,  
Area		 UjI -<|  
M=100		 XKq}^M&gy  
M=100 1064nm
qkbxa?&X  
mm		 4S+sz?W2j  
mm2		 p&~= rp`E  
nA		 f.&((z?rC  
ns
t*'U|K4L/  
500953		 -N]%) Hy  
AD500-10		 k^Q>  
TO5i		 R |h(SXa  
Ø0.5		 E)=X8y  
0.2		 J(JqusQd !  
1.5		 j\S}TaH0e  
4
@ s2<y@  
501233		 rFPfTpS  
AD800-10		  ,m-/R  
TO5i		 !?~>f>js_l  
Ø0.8		 I T\lkF2  
0.5		 ?g21U97Q  
3		 ~Uz1()ftz  
5
&7CAxU;i3  
500883		 (;o/2Q?  
AD1500-10		 $ }D9)&f;  
TO5i		 7CKh?>  
Ø1.5		 WKB8k-.]ww  
1.77		 ]VU a $$  
7		 C3p/|{TP  
5
LT ZoO9O  
50123401		 `>mT/Rmb@  
AD4000-10		 ~20O&2  
TO8Si		 sZ!/uN!6  
Ø4		 lrXi *u]  
12.56		 J^R#  
50		 f(o1J|U{  
6
5|E_ ,d!v  
501387		 ;ESuj'*t  
AD800-10		 s}pn5zMp:8  
TO8S		 SqF9#&F  
High speed, high gain, low noise, lowpower consumption hybrid (AD800-10+TIA)
X-&U-S;  
Multi-Element Array
V!Q1o!J  
501174		 Mk-Rl  
QA4000-10		 Jn>6y:s  
TO8Si		 [e:mRMi  
Quadrant Avalanche Photodiode, High QE at850-1070nm
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