新势力光电供应雪崩二极管

新势力光电供应雪崩二极管（APD，Avalanchephotodiodes），是一种内部增益机制的光电二极管：蓝光增强型、红光增强型、红外增强型（900nm、1064nm）。该系列雪崩二极管应用广泛，包括：安检设备、激光测距、运动控制、分析仪器、生物医疗、光通信、军事、航空航天、光通讯。备注：如果采购数量10片以上，新势力光电提供配套的驱动电路模块。

`)8SIx Series 11: Blue sensitivity enhanced (forbiomedical applications)
8YPX8d8u Order #	o]]tH Type		_`*G71PS Active Area		a_VWgPVdDS Dark Current	s,mt%^x[ Rise Time
	1uyd+*/(xP Chip	N3Q .4? z9 Package	r^E(GmW Size	DgRn^gL{Q Area	u!HbS*jqq M=100	[@pumH> 410nm 50Ω
	1uyd+*/(xP Chip	N3Q .4? z9 Package	p")"t`k7 mm	_/ 5 mm2	x!7!)]h nA	M`iE'x ns
{a2Gb 500970	^VnnYtCRz AD800-11	00-2u~D& TO52S1	6h) &h1Yd Ø0.8	}YiFiGf, 0.5	qm9=Ga5 1	j:8Pcx 1
Tqs\|2at<t 500967	re4z>O* AD1900-11	:"nh76xg< TO5i	GAs.?JHd Ø1.95	zt 3	6\UIp#X 5	g%)cyri 2
M`9\|8f,!a Series 12: Red sensitivity enhanced(cut-off frequency up to 3 GHz)
ZBH^0 Order #	m.gv? Type		5+b73R3r Active Area		oOLj? 0t Dark Current	BEAY}P(y3 Rise Time
	g&_f%hx? Chip	N]ebKe Package	GUJ?6; Size	UsCaO<A Area	^mut-@ N9 660nm M=100	V~-tp^ 660nm 50Ω
	g&_f%hx? Chip	N]ebKe Package	y34<B)Wy mm	w%oa={x mm2	2PNe~9)*# A/W	$ \!OO) GHz
<&((vrfa 501828	>C5u>@%9O AD100-12	bq8h?Q LCC6.1	M`* BS Ø0.1	ExFz@6@ 0.008	gTLBR 50	puh-\Q/P typ.3, min.2
I,Jb_)H&t 501829	On[yL$? AD100-12	W]>%*n LCC6.1f	2P=~6( Ø0.1	{=,I>w]T\|W 0.008	q}z`Z/`/ 44	vr6YE;Rs typ.3, min.2
Oe "%v;- 501831	9.9B#? AD100-12	4l>d^L TO52S1	~g@}A Ø0.1	5Z:qU{[ 0.008	m G+=0Rn^ 50	NE Zu?g typ.3, min.2
#D ]CuSi 501157	oDt{;S8\|] AD230-12	U?5G%o(q LCC6.1	*q[;-E(fZ# Ø0.23	^HE@ [b 0.042	pWH,nn?w. 50	\|GP&!] typ.3, min.2
rJRg4Rog 501156	P%!=Rj^2m AD230-12	/wP2Wnq$ LCC6.1f	& Yx12B\ Ø0.23	80o'=E}" 0.042	$(*>]PC+) 44	Tgbq4xR( typ.3, min.2
*!dA/sid 501820	#]gmM AD230-12	Zzb?Nbf LCC6.1f	NnU`u.$D Ø0.23	V"}Jsr 0.042	Z B!~@Vf 44	xZ>j Q_} typ.3, min.2
K(WKx7Kky^ 501162	":GC}VIS AD230-12	S a}P \|qI TO52S1	{:Kr't<XzF Ø0.23	(S?DKPnR 0.042	P^<to(\| 50	Jz P0D' typ.3, min.2
?a1pO#{Dg 501155	Imq-5To# AD500-12	C46jVl LCC6.1	\F""G,AWq{ Ø0.5	hMV>5Y[s 0.196	dT (i*E\j 50	!?+q7U typ.3, min.2
]IzD` 501154	1083p9Uh AD500-12	j5]ul!ji LCC6.1f	4GXS( Ø0.5	2Vw2r@S/ 0.196	Z aS29} 44	v53\|)]V typ.3, min.2
l(@c 501819	w~Vqg:'\$ AD500-12	k_Y7<z0G LCC6.1f	@g]EY&Uzl Ø0.5	yO* 0.196	<$otBC/% 44	k1s5cg=n( typ.3, min.2
M.:JT31>1 501163	SQ/HZ AD500-12	)OVa7[-T TO52S1	~l*<LXp8 Ø0.5	\|{_>H' 0.196	<iGW~COd 50	!ab ef.%: typ.3, min.2
HPJHA , Series 8: Optimized for high cut-offfrequencies-850 nm (optimized for high speeds)
s{j A!T} Order #	S kB*w'k Type		5O Y5b8 Active Area		U4yl{? Dark Current	/SQ/$`1{ Rise Time
	n\f]?B( Chip	%~PT7"4 Package	.aVtd [ Size	PL3hrI 5 Area	XrWWV2[ M=100	+lhCF@N M=100 20V 50Ω
	n\f]?B( Chip	%~PT7"4 Package	U%[ye0@: mm	+%u3% } mm2	a60rJ#GD nA	* 1xs/$` ns
N-Z=p)] 501810	$ ]#WC\Hv AD100-8	H\\FAOj LCC6.1	4l68+ Ø0.1	n;Q8Gg2U 0.008	t8rFn 0.05	$bFK2yx?= <0.18
BenyA:W" 501811	j0V/\Ep)T< AD100-8	v\@RwtP LCC6.1f	uoeZb=< Ø0.1	{ I\og 0.008	U V*Ruy- 0.05	h:r?:C>n <0.18
gZ7R^] k 501812	/>/e AD100-8	Gn_DIFa LCC6.1f	z ynu0X Ø0.1	fb>$p_s] 0.008	6Io}3}3 0.05	uLWu. Vx <0.18
Hq 3V+$ 500011	T<?kH AD100-8	TjYHoL5 TO52S1	tp>YsQy]8 Ø0.1	aekke//y 0.008	wWiYxBeN 0.05	1gbFl/i6T <0.18
{\P%J:s#9 501171	' BS.:^ AD100-8	$sE=[j'v TO52S3	>X'-J{4R Ø0.1	J{Kw@_ypP 0.008	V-n{=8s 0.05	3?I! <0.18
qqf*g=f 501078	j-W$)c3X AD230-8	R_KDY LCC6.1	t'@mUX:-A Ø0.23	/Xb4'Qj 0.04	^MF 2Q+ 0.3	FpA t 0.18
]rH[+t- 501079	D5snaGss9a AD230-8	QOSMV#Nw% LCC6.1f	h\w;SDwOk Ø0.23	'yq?xlIj 0.04	5~@-LXqL 0.3	5)lcgvp 0.18
=2Yt[8'; 501805	(EY@{'.& AD230-8	Hy&Z0W'l LCC6.1f	]h(Iun Ø0.23	%\HPYnIe 0.04	GyN\|beou 0.3	UNa"\ 0.18
k1f<(@*` 500019	pF-_yyQ AD230-8	#NYnZ^6e TO52S1	A%Ka)UU+n Ø0.23	O& Sk}^ 0.04	&zX W 0.3	RBn/7 0.18
\|<,qnf\| - 500022	vjx'yh\| AD230-8	jc Mn TO52S3	s.i9&1Y-! Ø0.23	&AJkYh 0.04	aO&{.DO2 0.3	8^y=YUT 0.18
f^B8!EY#: 501496	s0f+AS\|} AD230-8	N wk ODFN2x2	@gK`RmhGE5 Ø0.23	9d#?,:JG 0.04	&'W7-Z\j- 0.3	\|7c],SHm 0.18
yV:8>9wE8 501077	K9%rr_ja! AD500-8	9S@x LCC6.1	fGlvum Ø0.5	DPxx9lN_rx 0.2	5.{=Op! 0.5	;QXg*GNAv$ 0.35
cLf90\|YFp 501076	)H W AD500-8	=\|1_6.tz LCC6.1f	>:6iFPP Ø0.5	6GunEYK!N8 0.2	?DUim1KG 0.5	+\Jo^\ 0.35
+a.2\Qt2A 501809	oLKliA=q AD500-8	KMIe%2:b5 LCC6.1f	u'l4=e Ø0.5	JHa1lj 0.2	auK9wQ%\ 0.5	uK" T~ 0.35
V_J0I*Qa4 500030	yl~;! AD500-8	;O`f+rG~ TO52S1	Q/]~`S Ø0.5	1*hEbO 0.2	OXrm!' 0.5	\|hika`35K 0.35
Eu(QeST\ 500305	.J O3# AD500-8	)mm0PJF~q TO52S2	y7F \|v8bq Ø0.5	q1:dcxR[ 0.2	vK)'3% 0.5	M@{?#MkS% 0.35
1(BLdP3& 500155	>JE+j= AD500-8	5eff3qrH{ TO52S3	ZEI)U, I. Ø0.5	cgrSd99. 0.2	.S54:vs 0.5	pmB {b 0.35
b:F;6X0~Hl 500947	[oU\l+t AD800-8	&B(z**+9 TO52S1	NRtH?&7 Ø0.8	`YqtI/-w 0.5	$f3IO#N 2	h<%$?h+} 0.7
ulsU~WW7r 501117	?P0b/g AD1100-8	e1W9"&4>G{ TO52S1	_rYW\|*cIF Ø1.13	$}WT"K 1	J;_4 3eS 4-6	-yqgs>R(d 1
aNu.4c/5 500015	gEk;Tj AD1900-8	`qhT TO5i	HZ'rM5Kq Ø1.95	nDraX_sm= 3	95'+8*YCY 15	=8 @DYz' 1.4
} KyoMs 501194	GLO3v. n; AD3000-8	%htI!b+"@ TO5i	~4~r Ø3	D?_K5a&v, 7.07	i,;JI>U 30	}lp37, 2
U_IGL 500160	LnE/62){N AD5000-8	tR>zBh_b TO8i	(/I6Wa Ø5	*w@1@6?j 19.63	CPy>sV3Ru0 60	Fqw4XR_`~ 3
zF`a:dD$d 500002	P{A})t7 AD230-8-2.3G	vgy.fP"@ TO5	D-{*3?x AD230-8-2.3GTO5 is a high frequency optical data receiver comprising an Avalanche SiliconPhotodiode and a transimpedance amplifier in a hermetically sealed TO5package.
lW\|=rq-\| 500003	-/?)0E AD500-8-1.3G	,1~zYL? TO5	cS%dTrfo AD500-8-1.3GTO5 is a high frequency optical data receiver comprising an Avalanche SiliconPhotodiode and a transimpedance amplifier in a hermetically sealed TO5package.
imif[n+]}d Series 9: NIR sensitivity enhanced-900nm(specifically for LIDAR and laser rangefinders)
Q$5t~*$` Order #	F62 uDyY Type		Ni>Ns=n Active Area		B{Vc-qJ Dark Current	a9e0lW:=c Rise Time
	o_Zs0/ Chip	FQO=}0Hl Package	jm%s#`)g Size	7~P2q/2E> Area	;j1 SSHZ M=100	-*mbalU,J M=100
	o_Zs0/ Chip	FQO=}0Hl Package	CqEbQ>? mm	3]vVuQK. mm2	\|c0^7vrC nA	>niv>+!N ns
\ 86g y/ 501815	By@65KmR" AD100-9	gf>H-718F LCC6.1	}o:LwxNO Ø0.1	cVx SO`jZw 0.008	mQ`atFz:Z 0.1	$[A^8[// <0.5
4k^P1 501816	0qNk.1pv AD100-9	r2#G\|/=@ LCC6.1f	_<f%== I' Ø0.1	goiI*"6M 0.008	GY?u+\|Q 0.1	!T<,fR+8X <0.5
8lx}0U 501123	2+y wy^ AD230-9	}i^M<A O LCC6.1	)zO\|m7 Ø0.23	'sZGLgT;m 0.04	,Gv}N& 0.5	X% 05[N 0.5
"=DQ {(L 501817	czIEkm AD230-9	XdA]);, LCC6.1f	3A^AEO Ø0.23	`5- ;'nX 0.04	mQ1 0.5	;!f~ 0.5
\h'7[vkr 500020	hkl0N%[ AD230-9	kO}%Y?9d TO52S1	Io<T'K Ø0.23	a^LckHPI> 0.04	]d(Z% 0.5	%iNgHoH 0.5
}^$#vJ(a7K 501265	KJJ:fG8' AD230-9	nmn/4> TO52S1F2	{f/]K GGk Ø0.23	yg8=G vO 0.04	u\ 7Y_`8 0.5	1v:Ql\^cT 0.5
T"htWo{v> 500023	;5;>f)diS AD230-9	&i3SB[\| TO52S3	"gNi}dB<] Ø0.23	x7e0& 0.04	^`#7(S)a/ 0.5	@nwVl8 0.5
'2Zs15)V 501122	;/V])4= AD500-9	~6t<`&f LCC6.1	V?yQm4 Ø0.5	DXD+,y\= 0.2	,k_ b-/ 0.8	;g8v7>p 0.55
*\#<2 QAe 501818	[L-wAk:Fb AD500-9	&bJBsd@Os LCC6.1f	A?04,l]y Ø0.5	7_3 PM 3C 0.2	fcp_<2KH 0.8	7./-\|# 0.55
VTR4uT- 500031	'wFhfZB1!B AD500-9	Ln6emXqw TO52S1	c/.s`hz Ø0.5	I/upiqy 0.2	WYRC_U7 0.8	4E=QO!pVv 0.55
RLex#j 500590	o_=4Ex " AD500-9	VWt=9D; TO52S1F2	61QA<Wb Ø0.5	=?4[:#Rh 0.2	vK/`or3U 0.8	+MHIZI 0.55
8(- 29 500306	/+B6oE>8 AD500-9	;Q&9t TO52S2	:I/9j=@1 Ø0.5	xc-[gt6 0.2	+68age;dM 0.8	lmUCrs37 0.55
\2~\c#-k 500156	Q;l%@)m+~ AD500-9	IDpLf*vSG TO52S3	!\|V_DsP Ø0.5	4VvE(f 0.2	z^*g2J, 0.8	e]>=;Zn 0.55
_d7;Z% 501196	BE&8E\w AD800-9	^^ SMr l TO52S1	1NZpd'$c Ø0.8	EJz!#f~ 0.5	90F.9rh 2	~mvv :u 0.9
bUy!hS;s 501197	+-TEB AD1100-9	!"/"Mqs3$ TO52S1	/W f.Gt9[ Ø1.13	RWu< dY#ym 1	)#4(4 @R h 4	jp}.W 1.3
Omn$O> 501208	~#so4<A`3 AD1500-9	p]~PyzG! TO5i	c*axw%Us Ø1.5	q~iEw#0-L 1.77	BuAzO>= 2	3qu?qD 2
2YQBw,gG 501198	:qR8 e J AD3000-9	Q;y4yJ$wI TO5i	U+ Yu_=o{ Ø3	W:WRG8(F 7.07	J?t(TW6E 30	<jFov`^ 2
['>r tV 500161	v^t oe AD5000-9	UWqX}T[^ TO8i	WHjJR Ø5	.2rpQa/h 19.63	S+eu3nMq 60	dF! B5( 3
/IX555/dR1 500756	*GhV1# < AD230-9-400M	4u0?[v[Hu TO5	Ps0<CUyI AD230-9-400M-TO5 is a high frequency optical data receivercomprising an Avalanche Silicon Photodiode and a transimpedance amplifier ina hermetically sealed TO-5 package.
U"UsQYa_ 500490	`x#}co AD500-9-400M	%/nDG9l TO5	-!T24/l AD500-9-400M-TO5 is a high frequency optical data receivercomprising an Avalanche Silicon Photodiode and a transimpedance amplifier ina hermetically sealed TO-5 package.
&01KHJY)/G Multi-Element Array
^*y1Fn0 501099	\|Q%nnN 8AA0.4-9	aAd1[?& SOJ22GL	8OS^3JS3" APD Array 8 Elements, QE>80% at760-910nm with NTC
d}?KPJ{ 501098	8U]mr+ 16AA0.13-9	p? VDBAx SOJ22GL	\|XQ\c.A APD Array 16 Elements, QE>80% at760-910nm with NTC
g38MF 500038	K-c>J uv&, 16AA0.13-9	z^/9YzA!6 DIL18	,k@iNid APD Array 16 Elements, QE>80% at760-910nm
weGsjy(b]N 501097	#'i,'h+F 16AA0.4-9	&`]T#"> SOJ22GL	:UKc:JVNM APD Array 16 Elements, QE>80% at760-910nm
hv\|-`}#0 50130802	EuVA"~PA 25AA0.04-9	NP!LBB)=Y BGA	\|w>b0aY APD Array 25 (5×5) elements, QE>80% at760-910nm with PTC
&u<%%b\| 50130802	.M[t5I'\ 25AA0.16-9	}KftVnD? BGA	NSzTl-eS APD Array 25 (5×5) elements, QE>80% at760-910nm with PTC
F,mStw: 50130702	HYJEz2RF 64AA0.04-9	p~(STHDe# BGA	MQ'=qR APD Array 64 (8×8) elements, QE>80% at760-910nm with PTC
.%0a 501207	c4Q%MRR QA4000-9	VhnIr#L+ TO8Si	5@W63!N Quadrant Avalanche Photodiode, QE>80%at 760-910nm
f&Sovuuh Series 10: NIR sensitivity enhanced -1064nm (specifically for laser rangefinders, targeting systems or anyapplications using YAG lasers or similar NIR radiation sources)
d7Cs a c Order #	BuitM\|k' Type		?ZhBS3L Active Area		@y eAM7 Dark Current	1:\|o7` Rise Time
	G;pc,\MF Chip	G8Ow;:Ro Package	\2Q#' Size	W_ ;be Area	).tTDZ M=100	tp\d:4~R M=100 1064nm
	G;pc,\MF Chip	G8Ow;:Ro Package	:hf%6N='kI mm	pQ ul0] mm2	[KW)z#`* nA	&!+1GI9z ns
q03nu3uDI 500953	Hr}\-$ AD500-10	6OtNWbB TO5i	LF:~& m Ø0.5	kH[thRk} 0.2	A=D G+z'' 1.5	.F\[AD 5 4
m_;XhO 501233	ZlQ&m AD800-10	@cG+D TO5i	}Os7[4RW Ø0.8	zTn.#-7y 0.5	Hm~.u.)\. 3	NR^3 1&}It 5
_?Ly7*UML 500883	D~2n8h"2ye AD1500-10	!\|J2o8g TO5i	(3j f_ Ø1.5	5m>f1`4JS 1.77	9S5C{~P4 7	#zb67mg~ 5
[XP\WG>s 50123401	\|uJjO>8]\| AD4000-10	k/Q8:qA TO8Si	,K.Wni#m Ø4	&5%~Qw.. 12.56	7e)j\|a-!< 50	LO%OH u}] 6
NMN&mJsmh 501387	:p$Q3 AD800-10	7?uIl9Vk>( TO8S	g(o^'f High speed, high gain, low noise, lowpower consumption hybrid (AD800-10+TIA)
v#5hK<9 Multi-Element Array
x*:"G'zT 501174	dZCjg0cx QA4000-10	Bv7os3xb TO8Si	&i*e&{L7 Quadrant Avalanche Photodiode, High QE at850-1070nm

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邮箱：Sales@NewOpto.com
手机：188-5711-5252
电话：0571-85152711

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