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newopto 2014-11-13 11:40

新势力光电供应雪崩二极管

新势力光电供应雪崩二极管（APD，Avalanchephotodiodes），是一种内部增益机制的光电二极管：蓝光增强型、红光增强型、红外增强型（900nm、1064nm）。该系列雪崩二极管应用广泛，包括：安检设备、激光测距、运动控制、分析仪器、生物医疗、光通信、军事、航空航天、光通讯。备注：如果采购数量10片以上，新势力光电提供配套的驱动电路模块。 6~>k]G  
KL4/"$l]  
Series 11: Blue sensitivity enhanced (forbiomedical applications)
sf0U(XYQ^  
Order #		 T 1=M6iJ  
Type		 nT"z(\i.!J  
Active Area		 gBu4`M  
Dark Current		 }}_l@5  
Rise Time
aK'r=NU  
Chip		 BYU.ptiJJ  
Package		 mGvP9E"&  
Size		 :f;|^(]"  
Area		 2l?J9c}Wo  
M=100		 G\%hT5^  
410nm 50Ω
6! 'Xo:p  
mm		 W6Pg:Il7  
mm2		 LKcrr;  
nA		 6-"&jbvm  
ns
v<1;1m  
500970		 *en{pR'  
AD800-11		 Gj3/&'k6  
TO52S1		 ~55>uw<  
Ø0.8		 uE(w$2Wi  
0.5		 ?*,q#ZkA9W  
1		 k1J}9HNYR  
1
Kl?1)u3^4  
500967		 ] ?(=rm9u  
AD1900-11		 *F0N'*  
TO5i		 7f>n`nq?  
Ø1.95		 n :P}K?lg  
3		 t At+5H  
5		 xh0!H| R  
2
K4BMa]/U  
Series 12: Red sensitivity enhanced(cut-off frequency up to 3 GHz)
V 6F,X`7  
Order #		 P; Ox|  
Type		 RS~oSoAE  
Active Area		 G1rgp>m  
Dark Current		 [z\*Zg  
Rise Time
_wBPn6gg`  
Chip		 +Q.[W`goV  
Package		 y@I"Hk<T  
Size		 8J} J;Ga  
Area		 +Ji dP  
660nm M=100		 ;XT$rtuX  
660nm 50Ω
X`&E,;bIb  
mm		 Y%3j >_\;  
mm2		 \;}dS SB1  
A/W		 ScEM#9T|  
GHz
#/T)9=m  
501828		 rlD@O~P4  
AD100-12		 HM/ q B^  
LCC6.1		 E%TvGe;#  
Ø0.1		 @ o]F~x  
0.008		 |c) #zSv  
50		 Z\x6  
typ.3, min.2
N}\i!YUD  
501829		 J#\/znT  
AD100-12		 }U9e#>e x  
LCC6.1f		 [30e>bSf`  
Ø0.1		 7r>^_aW  
0.008		 ctf'/IZ5  
44		 4_$f "6  
typ.3, min.2
F)C8LH  
501831		 yDPek*#^"q  
AD100-12		 46b.= }  
TO52S1		 61wiXX"N  
Ø0.1		 rS=6d6@  
0.008		 OA+W$  
50		 _QQO&0Z  
typ.3, min.2
5QlJX  
501157		 4WLB,<b}  
AD230-12		 ,W.O*vCA  
LCC6.1		 H]cCyuCdH  
Ø0.23		 Q9( eH2=  
0.042		 Q?~l=}2  
50		 {2!.3<#  
typ.3, min.2
O?P6rXKr  
501156		 cB|](gWS~  
AD230-12		 h-<+Pjc  
LCC6.1f		 , =#'?>Kq  
Ø0.23		 lm$T`:c  
0.042		 o^Ms(?K%t  
44		 zDX-}t_'q  
typ.3, min.2
Q WOd&=:  
501820		 !aLL|}S  
AD230-12		 1&U U6|X  
LCC6.1f		 W )\~T:Kn  
Ø0.23		 ~GZ(Ou-&  
0.042		 Rt+s\MC^r  
44		 d35,[  
typ.3, min.2
lE4.O  
501162		 By" =]|Q  
AD230-12		  $///N+B  
TO52S1		 ondF  
Ø0.23		 W}Z'zU?[  
0.042		 k5((@[  
50		 !iMsTH<  
typ.3, min.2
9mr99 tA  
501155		 leiP/D6s  
AD500-12		 <Dl7|M  
LCC6.1		 %{axoGd  
Ø0.5		 SwLul4V  
0.196		 {@k5e) Q  
50		 7Y:1ji0l  
typ.3, min.2
(Ori].{C.J  
501154		 /.P*%'g  
AD500-12		 p;g$D=2  
LCC6.1f		 Ig~lD>dnr'  
Ø0.5		 b3W@{je  
0.196		 phd,Jg[  
44		 5Osx__6$t  
typ.3, min.2
UE5T%zd/  
501819		 @a+1Ri`)  
AD500-12		 }Dm-Ibdg(  
LCC6.1f		 = oQ-I  
Ø0.5		 .cjSgK1  
0.196		 USv: + .  
44		 )bXiw3'A  
typ.3, min.2
fM6Pw6k  
501163		 a?_N8|k[  
AD500-12		 ]:d`=V\&N  
TO52S1		 7?xTJN)G  
Ø0.5		 uL`;KD  
0.196		 O)n"a\LD  
50		 IZ/+ROn  
typ.3, min.2
xx_]e4  
Series 8: Optimized for high cut-offfrequencies-850 nm (optimized for high speeds)
<`}Oi 5nW  
Order #		 x[zt(kC0+  
Type		 f%;8]a9  
Active Area		 h,"K+$  
Dark Current		 0"#'Z>"  
Rise Time
r>+\9q1  
Chip		 1:(qoA:  
Package		 !RN(/ &%y  
Size		 fYBmW')  
Area		 u1R_u9  
M=100		 f%<kcM2  
M=100 20V 50Ω
/_rEI,[k  
mm		 2r4owB?  
mm2		 3 - Nwg9 U  
nA		 TCWy^8LA  
ns
xEb+sE6Z  
501810		 ..'k+0u^  
AD100-8		 z|E/pm$^  
LCC6.1		 ZCVwQ#Xe+  
Ø0.1		 d e)7_pCF|  
0.008		 p=sL KnLmZ  
0.05		 >]s\%GO  
<0.18
kK\G+{z?  
501811		 l+`f\},  
AD100-8		 '#pY/,hVB  
LCC6.1f		 B >2"O  
Ø0.1		 7L)edR [  
0.008		 : .Y  
0.05		 vkUXMMuf+e  
<0.18
YW9r'{(D(I  
501812		 Ad$CHx-  
AD100-8		 5G  @  
LCC6.1f		 lOB*M!8   
Ø0.1		 OI/m_xx@j  
0.008		 ~0/tU#&  
0.05		 b/;!yOF  
<0.18
tjLp;%6e  
500011		  KT'Ebb]  
AD100-8		 YvA@I|..~  
TO52S1		 dAg<BK/  
Ø0.1		 Q5Yy \M  
0.008		 LelCjC{`1  
0.05		 F3 uR:)4<M  
<0.18
0 ]K\G55  
501171		 *S _[8L"  
AD100-8		 q-? k=RX`  
TO52S3		 XL=Y~7b  
Ø0.1		 -o: if F|  
0.008		 e *9c33  
0.05		 }enS'Fpf`  
<0.18
V/N:Of:\R  
501078		 xbUL./uj  
AD230-8		 GTYCNi66  
LCC6.1		 $4YyZ!_.@  
Ø0.23		 VT@,RlB0  
0.04		 `3wzOMgJ  
0.3		 Dqxtc|vo  
0.18
d;:H#F+ (  
501079		 hKx*V"7/#\  
AD230-8		 s}1S6*Cr  
LCC6.1f		 *;N6S~_'Y  
Ø0.23		 ,?k0~fuG6  
0.04		 $nf5bo/;  
0.3		 8VWkUsOoI  
0.18
WRdBL5  
501805		 l(Y U9dp  
AD230-8		 1&7~.S;km  
LCC6.1f		 C4,;l^?=%  
Ø0.23		 . W7Z pV  
0.04		 lhk=yVG3  
0.3		 ' \8|`Zb  
0.18
Bm e_#  
500019		 9sQ #v-+Yx  
AD230-8		 EdH;P \c  
TO52S1		 DA9-F  
Ø0.23		 Q85Y6',  
0.04		 1K&_t  
0.3		 9e aqq  
0.18
j Z6]G{  
500022		 #E'aa'P}  
AD230-8		 - WEEnwZ  
TO52S3		 O>vbAIu  
Ø0.23		 dRhsnT+KX  
0.04		  sJ3O ]  
0.3		 :6T 8\W  
0.18
kO)+%'L!8  
501496		 Hyn*O)q!  
AD230-8		 HNMVs]/e  
ODFN2x2		 X:/Y^Xu  
Ø0.23		 0b3z(x!O  
0.04		 %C1*`"Jb&  
0.3		 =Rw-@ *#l  
0.18
 ?|$IZ9  
501077		 q@+#CUa&n  
AD500-8		 bMCy=5  
LCC6.1		 rzk-_AFR  
Ø0.5		 \9Yc2$dY  
0.2		 Qzh`x-S  
0.5		 I_aS C4  
0.35
tqMOh R  
501076		 "Vw;y+F}  
AD500-8		 _oU}>5  
LCC6.1f		 lk[BS*  
Ø0.5		 >cdxe3I\  
0.2		 jb'A Os  
0.5		 } N$soaUs  
0.35
$Y3mO ~  
501809		 [@4.<4Y  
AD500-8		 }b$W+/M\  
LCC6.1f		 "'9[c"Iz  
Ø0.5		 +jv&V%IL  
0.2		 rL9u7) x  
0.5		 %9HL "  
0.35
M#'j7EMu  
500030		 gQ8FjL6?  
AD500-8		 YB?5s`vr9d  
TO52S1		 E4;@P']`  
Ø0.5		 pf%B  
0.2		 w1q`  
0.5		 6 h%%?  
0.35
~L55l2u7  
500305		 2 g`<*u*  
AD500-8		 )_-EeH  
TO52S2		 {g@?\  
Ø0.5		 P-25]-  
0.2		 GyP.;$NHa[  
0.5		 Q"VS;uh.v  
0.35
<,\Op=$l3I  
500155		 l+!eC lM%  
AD500-8		 R32A2Ml  
TO52S3		 M7x*LiKc2  
Ø0.5		 !\(j[d#  
0.2		 NAnccB D!{  
0.5		 f*HEw  
0.35
W81 dLeTZg  
500947		 UifuRmn  
AD800-8		 :@=;WB*0  
TO52S1		 qwd7vYBc,  
Ø0.8		 u.~`/O  
0.5		 MjrI0@R  
2		 n5e1k y*9w  
0.7
 |tVWmm^m  
501117		 t_\;G~O9-M  
AD1100-8		 6upCL:A~r  
TO52S1		 Z+EN]02|  
Ø1.13		 !8ch&cr)o+  
1		 QH]G>+LI5  
4-6		 /'<Qk'   
1
Zy+EIx  
500015		 ]\ DIJ>JZ  
AD1900-8		 \fjr`t]  
TO5i		 R&P}\cf8T  
Ø1.95		 )/4xR]  
3		 6:$+"@ps  
15		 27CVAX ghV  
1.4
"eOFp\vPr  
501194		 ,2*x4Gycb  
AD3000-8		 JrA\ V=K  
TO5i		 wB0K e  
Ø3		 x |0@T?  
7.07		 y%NZ(Y,v  
30		 9@{=2 k  
2
@9ndr$t  
500160		 H7&bUt/  
AD5000-8		 O\=c&n~`  
TO8i		 ! {c"C  
Ø5		 _G1C5nkDl4  
19.63		 hOH DXc"  
60		 {=A8kgt  
3
$1< ~J  
500002		 2 ,bLEhu  
AD230-8-2.3G		 %*Aq%,.={  
TO5		  XeRbn  
AD230-8-2.3GTO5 is a high frequency optical data receiver comprising an Avalanche SiliconPhotodiode and a transimpedance amplifier in a hermetically sealed TO5package.
aH(B}wh{  
500003		 W^sH|2g  
AD500-8-1.3G		 tJgo% P1  
TO5		 L,PD4H"8  
AD500-8-1.3GTO5 is a high frequency optical data receiver comprising an Avalanche SiliconPhotodiode and a transimpedance amplifier in a hermetically sealed TO5package.
3<vw#]yL  
Series 9: NIR sensitivity enhanced-900nm(specifically for LIDAR and laser rangefinders)
SIr^\iiOB  
Order #		 '$m uA\  
Type		 L kA_M'G  
Active Area		 rJ7yq|^Z  
Dark Current		 :^92B?q  
Rise Time
q\q8xF~[p  
Chip		 S{.G=O  
Package		 NJ];Ck  
Size		 WK)2/$7@  
Area		 gxf{/EjH  
M=100		 `zmj iC  
M=100
Q xg)Wb#  
mm		 (I7s[  
mm2		 NKJ+DD:'  
nA		 QO|roE  
ns
fRT4,;  
501815		 //W7$DYEG  
AD100-9		 kH9P(`;Vq  
LCC6.1		 Bk)*Z/1<x  
Ø0.1		 p.50BcDg  
0.008		 y)%CNH)*x  
0.1		 `L#`WC@[o  
<0.5
u hJnDo  
501816		 t=B>t S.hO  
AD100-9		 r'5~4'o$  
LCC6.1f		 =FfxHo1k  
Ø0.1		 N~] 4,~  
0.008		 kl/eJN'S  
0.1		 ~[H+,+XLY+  
<0.5
e <]^7pz  
501123		 We51s^(  
AD230-9		 o{n)w6P{R,  
LCC6.1		 +T|M U  
Ø0.23		 P g{/tM Y  
0.04		 5UU1HC;C  
0.5		 g$P<`.  
0.5
Utv#E.VI  
501817		 BZr$x8%ki  
AD230-9		 ~,jBm^4  
LCC6.1f		 MfJ8+3@K  
Ø0.23		 M`jqU g  
0.04		 \ f6@B:?y  
0.5		 9+!1jTGSkf  
0.5
8:QnxrODP  
500020		 ,-[e{=Cz  
AD230-9		 G{C27k>wa  
TO52S1		 F[HMX4  
Ø0.23		  I0v$3BQ4  
0.04		 o fw0_)!Q  
0.5		 J#OiY  
0.5
miCW(mbO8  
501265		 /xseI)y.B  
AD230-9		 G5K_e:i  
TO52S1F2		 p(J,fus  
Ø0.23		 sb^%eUU])  
0.04		 XC NM  
0.5		 9 f+S-!  
0.5
<ic%c/mN  
500023		 6.|Q yk*  
AD230-9		 7 g2@RKo  
TO52S3		 VUD ?iv7  
Ø0.23		 T+9#&  
0.04		 .&R j2d  
0.5		 gXzp$#  
0.5
L4wKG&  
501122		 Wdp?<U  
AD500-9		 (sHvoE^q-  
LCC6.1		 -N4km5  
Ø0.5		 luYa+E0  
0.2		 )X dpzWod  
0.8		 M:*^k  
0.55
>AsrPU[  
501818		 ecjjCt2S  
AD500-9		 Xgs 31#K  
LCC6.1f		 l'#P:eW  
Ø0.5		 4Em$L]7   
0.2		 TAl#V 7PF}  
0.8		 "N|gU;~W  
0.55
k&kx%skz  
500031		 >#j f Z5t  
AD500-9		 9sR?aW^$,/  
TO52S1		 fNkN  
Ø0.5		 j!oD9&W4~  
0.2		 MK*WStY  
0.8		 P<1ZpL  
0.55
VXpbmg!{S  
500590		 w N-np3k  
AD500-9		 5V{ B,T  
TO52S1F2		 AZi|85rN  
Ø0.5		 $d[xSwang  
0.2		 B< `'h  
0.8		 aeP 6JHj  
0.55
X9d~r_2&m<  
500306		 m3La;%aA0  
AD500-9		 ^3q o%=i  
TO52S2		 :Ur=}@Dj  
Ø0.5		 ?\eq!bu  
0.2		 `k>h2(@9S  
0.8		 <`~zKFUQ[  
0.55
ylEQeN  
500156		 ;T6x$e  
AD500-9		 C9`J6Uu  
TO52S3		 6@2 S*\&  
Ø0.5		 -}h+hS50F  
0.2		 1 >nl ]yO  
0.8		 axRzn:f  
0.55
ikSm;.  
501196		 NVTNjDF%s  
AD800-9		 {APsi7HYBr  
TO52S1		 *TjolE~o  
Ø0.8		 %/86}DCfE?  
0.5		 5g{L -8XwI  
2		 7,\Uk|  
0.9
X C jYm  
501197		 OYWW<N+R2  
AD1100-9		 rY 0kzD/  
TO52S1		 0NN{2"M$p  
Ø1.13		 Q}?yj,D D  
1		 @Gs*y1  
4		 (ei;Y~i  
1.3
2^Tj@P7  
501208		 s[V$f vW  
AD1500-9		 4)o_gm~6c4  
TO5i		 n.[0#Ur&}  
Ø1.5		 7VF^&6  
1.77		 !Cm<K*c"&E  
2		 PgKA>50a  
2
MNE{mV(  
501198		 Z=ayVsJ3  
AD3000-9		 nt/+?Sj  
TO5i		 _.xT :b36  
Ø3		 I 9yN TD  
7.07		 v;E7UL .w  
30		 X(-e-:B4;  
2
}`oe<|  
500161		 :qV}v2  
AD5000-9		 FkdG@7Xf  
TO8i		 OHqc,@a;+  
Ø5		 ^y?7B_%:B#  
19.63		 ~~?4w.k  
60		 "t<$ {  
3
f6 zT  
500756		 _E e`Uk  
AD230-9-400M		 gI&& LwT4  
TO5		 s!\uR.  
AD230-9-400M-TO5 is a high frequency optical data receivercomprising an Avalanche Silicon Photodiode and a transimpedance amplifier ina hermetically sealed TO-5 package.
|~mi6 lJ6  
500490		 4:\s.Z{!3  
AD500-9-400M		 ^A8'YTl  
TO5		 f-9& n4=H  
AD500-9-400M-TO5 is a high frequency optical data receivercomprising an Avalanche Silicon Photodiode and a transimpedance amplifier ina hermetically sealed TO-5 package.
+Y!9)~f}7X  
Multi-Element Array
u,:GJU  
501099		 SRl:+!@.  
8AA0.4-9		 G: FP9  
SOJ22GL		 '`q&UPg]  
APD Array 8 Elements, QE>80% at760-910nm with NTC
c9\jELO  
501098		 ~X^L3=!vf  
16AA0.13-9		 .Od.lxz"mp  
SOJ22GL		 6!} @vp![  
APD Array 16 Elements, QE>80% at760-910nm with NTC
AZ)H/#be  
500038		 QN_Zd@K*A  
16AA0.13-9		 p=U*4[9k  
DIL18		 8LP L4l  
APD Array 16 Elements, QE>80% at760-910nm
Kk2PWJ7  
501097		 R07Kure  
16AA0.4-9		 -LL49P6  
SOJ22GL		 |3f?1:"Z  
APD Array 16 Elements, QE>80% at760-910nm
jX^uNmb  
50130802		 [HB>\   
25AA0.04-9		  k%V#{t.  
BGA		 'c 0]8Y 4  
APD Array 25 (5×5) elements, QE>80% at760-910nm with PTC
kP9DCDO`[5  
50130802		 z'K&LH  
25AA0.16-9		 `}gjfu -'\  
BGA		 'qS&7 W(  
APD Array 25 (5×5) elements, QE>80% at760-910nm with PTC
B&&:A4  
50130702		 '~ RP+  
64AA0.04-9		 YaJ[39V  
BGA		 Bk&ry)`gD  
APD Array 64 (8×8) elements, QE>80% at760-910nm with PTC
* 8n0  
501207		 xJ>U_Gd  
QA4000-9		 {-IH?!&v  
TO8Si		 bCY8CIF  
Quadrant Avalanche Photodiode, QE>80%at 760-910nm
^>02,X mk  
Series 10: NIR sensitivity enhanced -1064nm (specifically for laser rangefinders, targeting systems or anyapplications using YAG lasers or similar NIR radiation sources)
K'.aQ&2  
Order #		 GU'/-6-T  
Type		 JQQP!]%}  
Active Area		 Fyy)665x/  
Dark Current		 8%]o6'd4  
Rise Time
H%`Ja('"p  
Chip		 L.XGD|m  
Package		 I/D (gY06<  
Size		 '`Eb].s*  
Area		 %EA|2O.D  
M=100		 Dbt"}#uit;  
M=100 1064nm
?4Z`^uy  
mm		 =n>&Bl-Bl  
mm2		 ?yop#tjCbY  
nA		 ,h,DB=!K<  
ns
$8gj}0}eH  
500953		 VWqmqR%  
AD500-10		 7 sv 3=/`  
TO5i		 &GF@9BXI3  
Ø0.5		 pEf1[ zq  
0.2		 Vvk1 D(  
1.5		 Y=+pz^/"  
4
T$[50~  
501233		 U^iNOMs?  
AD800-10		 !5lb+%7  
TO5i		 8."B  
Ø0.8		 c:(Xk zj  
0.5		 z\wY3pIr2  
3		 yO\ .dp  
5
)Y.H*ca  
500883		 &`+tWL6L  
AD1500-10		 *Ii_dpJ  
TO5i		 yf3c- p  
Ø1.5		 %mKM9>lf#  
1.77		 ASA ]7qyO  
7		 -I dW-9~9  
5
Aw#@}TGT  
50123401		 zf+jQ  
AD4000-10		 /dGpac  
TO8Si		 % NSb8@  
Ø4		 `5da  
12.56		 f@Oi$9CZn  
50		 Fo\* Cr9D  
6
h`Ld%iN\  
501387		 a`/\0~  
AD800-10		 Eod'Esye5  
TO8S		 j{QzD^t  
High speed, high gain, low noise, lowpower consumption hybrid (AD800-10+TIA)
t!^ j0q  
Multi-Element Array
NVyel*QE  
501174		 (%p@G5GU  
QA4000-10		 `^_c&y K  
TO8Si		 L>xecep  
Quadrant Avalanche Photodiode, High QE at850-1070nm
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