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newopto 2014-11-13 11:40

新势力光电供应雪崩二极管

新势力光电供应雪崩二极管（APD，Avalanchephotodiodes），是一种内部增益机制的光电二极管：蓝光增强型、红光增强型、红外增强型（900nm、1064nm）。该系列雪崩二极管应用广泛，包括：安检设备、激光测距、运动控制、分析仪器、生物医疗、光通信、军事、航空航天、光通讯。备注：如果采购数量10片以上，新势力光电提供配套的驱动电路模块。  f^vz  
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Series 11: Blue sensitivity enhanced (forbiomedical applications)
'Cq)/}0  
Order #		 fxcCz 5  
Type		 :JI&ngWK  
Active Area		 (Y[q2b  
Dark Current		 DV6B_A{kI  
Rise Time
asLvJ{d8s  
Chip		 Y/Dah*  
Package		 aj\ zc I  
Size		 ?T (@<T  
Area		 YU (|i}b  
M=100		 $I$ B8  
410nm 50Ω
'|jN!y^ 2p  
mm		 X1N*}@:/  
mm2		 &>KZ4%&?  
nA		 ;vkk$ -  
ns
Y \oz9tf8  
500970		 ;q ;}2  
AD800-11		 :Qd{V3*]  
TO52S1		 dJYW8pcKT  
Ø0.8		 J;mvD^`g  
0.5		 ]y52%RAKI  
1		  Xb'UsQ  
1
tAxS1<T4  
500967		 6.0/asN}  
AD1900-11		 A2xfNY<  
TO5i		 >oOZDuj   
Ø1.95		 K[G=J  
3		 iAd3w6  
5		 '{ I YANVT  
2
JIYZ  
Series 12: Red sensitivity enhanced(cut-off frequency up to 3 GHz)
$Lf-Gi  
Order #		 CEMe2~  
Type		 F%s'R 0l  
Active Area		 &|j^?ro6  
Dark Current		 :Dn{  
Rise Time
FsXqF&{  
Chip		 "A0J~YvYWJ  
Package		 ~6HaZlBB  
Size		 )8244;  
Area		 G|,'6|$jE  
660nm M=100		 8`? vWJS  
660nm 50Ω
uz8Y)b  
mm		 JS:AHJSz  
mm2		 iAWd 9x  
A/W		 5kju{2`GF  
GHz
]DV=/RpJ9B  
501828		 a{deN9Qn  
AD100-12		 rERHfr`OU  
LCC6.1		 QaAWO  
Ø0.1		 {;0+N -U  
0.008		 ]!=,8dY  
50		 nxZ[E.-\  
typ.3, min.2
MNzWTn@  
501829		 q/N1q&  
AD100-12		 tI-u@ g  
LCC6.1f		 PE7D)!d T  
Ø0.1		 NZh\{!  
0.008		 7yDWcm_y  
44		 Y8$,So>~  
typ.3, min.2
0wlKBwf`J  
501831		 #;WKuRv   
AD100-12		 +LEU|#  
TO52S1		 2xEG s Q  
Ø0.1		 .dvOUt I[  
0.008		 o(5eb;"yi>  
50		 ha -KfkPFE  
typ.3, min.2
BA 9c-Ay  
501157		  q(C <w  
AD230-12		 "-U`E)]w*[  
LCC6.1		 #3WKm*T/  
Ø0.23		 X\yy\`o  
0.042		 aGRD`ra  
50		 6k@(7Mw8A  
typ.3, min.2
F CbU> 1R  
501156		 n(}zq  
AD230-12		 ~t` uq  
LCC6.1f		 c<c"n'  
Ø0.23		 ~s[St0  
0.042		 [IgB78_$  
44		 |'R^\M Q  
typ.3, min.2
(*CGZDg  
501820		 jLy3c@Dp  
AD230-12		 #,4CeD|(D,  
LCC6.1f		 F}C.F  
Ø0.23		 {@7{!I|eD  
0.042		 lNQ8$b  
44		 N;A#K 7A[@  
typ.3, min.2
tU :,s^E"#  
501162		 NGYUZ\m  
AD230-12		 2 u{"R  
TO52S1		 t;?TXAA  
Ø0.23		 />EH]-|  
0.042		 "iC*Eoz#.  
50		 q|N/vkqPz  
typ.3, min.2
0<{zW%w  
501155		 REe<k<>p~  
AD500-12		 u*aFWl]=  
LCC6.1		 l\NVnXv:>  
Ø0.5		 bhqs%B!:  
0.196		 o_K. +^$  
50		 l?AWG&  
typ.3, min.2
F*bmV>Qq  
501154		 k^vsQ'TD  
AD500-12		 iLyJ7zby  
LCC6.1f		 iO 9fg  
Ø0.5		 <1L?Xhoc6  
0.196		 -b7q)%V  
44		 r@XH=[:  
typ.3, min.2
0)?.rthk4S  
501819		 _^;;vR%   
AD500-12		 >C1**GQ  
LCC6.1f		 k$u/6lw]IB  
Ø0.5		 O$2'$44HX  
0.196		 PZDj)x_%B&  
44		 %O! ~!'  
typ.3, min.2
20O\@}2q2M  
501163		 OjUZ-_J  
AD500-12		 n&`=.[+A  
TO52S1		 m-M.F9R  
Ø0.5		 #:Tb(R   
0.196		 x P3v65Q1  
50		 l.V{H<v}  
typ.3, min.2
!D_Qat  
Series 8: Optimized for high cut-offfrequencies-850 nm (optimized for high speeds)
Do3g^RD#  
Order #		 {5$.:Y  
Type		 ~; emUU  
Active Area		 %B ,>6 `[  
Dark Current		 8w:A""  
Rise Time
{!$E\e^d  
Chip		 vp4l g1/  
Package		 i"#36CVT~  
Size		 }! jk  
Area		 >A+0"5+_p  
M=100		 aMxg6\8  
M=100 20V 50Ω
'\&t3?;  
mm		 Gs2| #*6  
mm2		 )o:%Zrk  
nA		 <vP{U  
ns
6eUM[C.  
501810		 S#kA$yO  
AD100-8		 xcF:moL  
LCC6.1		 r&u&$ "c  
Ø0.1		 M[C9P.O%w  
0.008		 sNet[y:O3  
0.05		 K%+[2Hj2  
<0.18
 <|Pw*L$  
501811		 H\zV/1~Y  
AD100-8		 -*Voui  
LCC6.1f		 epcBr_}  
Ø0.1		 )&Bf%1>  
0.008		 .ykCmznf*  
0.05		 y@5{.jsr_  
<0.18
:{(` ;fJ  
501812		 O0"u-UX{  
AD100-8		 ypCarvQT  
LCC6.1f		 0 e}N{,&Y  
Ø0.1		 Fp_?1 y  
0.008		 3X0"</G6  
0.05		 <6 LpsM}  
<0.18
eQiK\iDS  
500011		 mHm"QBa!  
AD100-8		 3kTOWIX  
TO52S1		 vZDM}u  
Ø0.1		 #6'x-Z_  
0.008		  !e+^}s  
0.05		 1ZUmMa1(  
<0.18
cZd9A(1"^  
501171		 7S +YQ$_  
AD100-8		 w^_[(9 `  
TO52S3		 Z{9 mZ lIy  
Ø0.1		 5uVSbo.  
0.008		 =JqKdLH  
0.05		 cgQ4JY/6  
<0.18
C J@G8>  
501078		 l7+[Zn/v *  
AD230-8		 Pjs L{,  
LCC6.1		 7a,/DI2o  
Ø0.23		 N"tEXb/,  
0.04		 lg9`Z>?  
0.3		 5IwQ <V  
0.18
%ut^ O  
501079		 $KmhG1*s  
AD230-8		 %yVboA1  
LCC6.1f		 9r5<A!1#L  
Ø0.23		 ^Yz.}a##w2  
0.04		 u_;&+o2  
0.3		 /2<1/[#  
0.18
>+9f{FP 9  
501805		 dbmty|d  
AD230-8		 1ymq7F(2  
LCC6.1f		 aUqVcEU1  
Ø0.23		 4v=NmO }  
0.04		 n1"QHA  
0.3		 %[ Z[  
0.18
l2AAEB_C.  
500019		 `8.Oc;*zu  
AD230-8		 <9BM%  
TO52S1		 2I8 RO\zR  
Ø0.23		 &!adW@y  
0.04		 x ]6wiV  
0.3		 `T-lBwH  
0.18
!oJ226>WI  
500022		 v0d<P2ix  
AD230-8		 ZRK1 UpP  
TO52S3		 r"%uP[H  
Ø0.23		 }Q=@$YIesD  
0.04		 y [pU8QSt  
0.3		 S7I8BS[*v  
0.18
_olhCLIR-  
501496		 Ot^<:\< `G  
AD230-8		 4X()D {uR  
ODFN2x2		 "EE=j$8u+  
Ø0.23		 *Dz<Pi^  
0.04		 bnm3 cR:h"  
0.3		 ZeL v!  
0.18
';CL;A;  
501077		 K4H U 9!  
AD500-8		 HxH.=M8S_  
LCC6.1		 9rCvnP=  
Ø0.5		 #?V7kds]  
0.2		 G;'=#c ^  
0.5		 SU {U+  
0.35
`X=2Ff  
501076		 bsn.HT"5  
AD500-8		 x'uxSeH$  
LCC6.1f		 ~@v<B I  
Ø0.5		 ^<}>]F_  
0.2		 W,g0n=2V  
0.5		 7p!w(N?s  
0.35
FTA[O.tiG  
501809		 '(qVA>S  
AD500-8		 'u%;5;%2  
LCC6.1f		 ,)CRozC\}K  
Ø0.5		 z1WF@ Ej  
0.2		 fG^#G/n2  
0.5		 -%h0`hOG{  
0.35
Z6`oGFq  
500030		 ?11\@d  
AD500-8		 +dt b~M  
TO52S1		 DH5]Kzb/  
Ø0.5		 8%Wg;:DZx  
0.2		 }I Rx$ cKV  
0.5		 $;ssW"7~Qn  
0.35
y*AB=d^  
500305		 p{sbf;-x}  
AD500-8		 fuwv,[m  
TO52S2		 &>0ape  
Ø0.5		 ,IODV`L  
0.2		 ~I+}u]J  
0.5		 pO;BX5(x  
0.35
dV5aIj  
500155		 w(y#{!%+  
AD500-8		 |<YoH$.  
TO52S3		 q*h1=H52  
Ø0.5		 $?dAO}f3O)  
0.2		 v7L} I[f  
0.5		 CQLh;W`Dc  
0.35
0%m}tfQ5  
500947		 '+ 8.nN  
AD800-8		 @\!9dK-W  
TO52S1		 ?^# h|aUp.  
Ø0.8		 0Q]p#;  
0.5		 \[-z4Fxg|'  
2		 VHyP@JB  
0.7
 `#m>3  
501117		 ]/_GHG9  
AD1100-8		 Fe4QWB6\U  
TO52S1		 T}?vp~./   
Ø1.13		 T%Vg0Y)P;  
1		 wR"4slY_%  
4-6		 Mohy;#8Wk  
1
m-~eCFc  
500015		 (,J`!Y hS  
AD1900-8		 w(P\+ m<%  
TO5i		 CQq'x +{F  
Ø1.95		 L?@ TF;  
3		 `mI% Se  
15		 3,snx4q (  
1.4
%Ps DS  
501194		 0P5!fXs*  
AD3000-8		 bi fi02  
TO5i		 +3c!.] o;  
Ø3		 !`BK%m\8  
7.07		 ^GXy:S$  
30		 a=55bEn  
2
u% ^Lu.l_c  
500160		 J.`z;0]op  
AD5000-8		 3wS{@'  
TO8i		 kXj%thDx  
Ø5		 %^L :K5V  
19.63		 8Ee bWs*1  
60		 0I.9m[<Fc  
3
ZOFhX$I  
500002		 q4k)E  
AD230-8-2.3G		 _{EO9s2FG  
TO5		 s[yIvlHw`  
AD230-8-2.3GTO5 is a high frequency optical data receiver comprising an Avalanche SiliconPhotodiode and a transimpedance amplifier in a hermetically sealed TO5package.
cx]O#b6B.  
500003		 hIj[#M&6  
AD500-8-1.3G		 G-U%  
TO5		 +[ _)i9a  
AD500-8-1.3GTO5 is a high frequency optical data receiver comprising an Avalanche SiliconPhotodiode and a transimpedance amplifier in a hermetically sealed TO5package.
iA~b[20&  
Series 9: NIR sensitivity enhanced-900nm(specifically for LIDAR and laser rangefinders)
z.H*"r  
Order #		 Y$^x.^dT,  
Type		 TtL2}Wdd.%  
Active Area		 JJnZbJti  
Dark Current		 #5?Q{ORN o  
Rise Time
Yx_[vLm  
Chip		 wHW";3w2~  
Package		 \?,'i/c-  
Size		 ?VMj;+'tr  
Area		 eSynw$F2N  
M=100		 ZQvpkO7}M  
M=100
8wz4KG3SK  
mm		 rK*s/mX <  
mm2		 =&*:)  
nA		 29"eu#-Qj  
ns
QZBXI3%#s  
501815		 K\&A}R  
AD100-9		 :&= TE2  
LCC6.1		 d7A08l{  
Ø0.1		 4C(vBKl  
0.008		 "(}xIsy  
0.1		 s-eC')w~E  
<0.5
Vw*;xek?  
501816		 lrjlkgSN  
AD100-9		 G7k0P-r,0  
LCC6.1f		 6Q,-ZM=Z_p  
Ø0.1		 d:0RDK-}s  
0.008		 O6P0Am7s  
0.1		 MN2#  
<0.5
oK h#th  
501123		 09"C&X~  
AD230-9		 R@``MC0  
LCC6.1		 m",wjoZe*  
Ø0.23		 ^*C+^l&J!  
0.04		 uROt h_/  
0.5		 Q>nq~#3?  
0.5
%3'4QmpR  
501817		 eL9 RrSXz  
AD230-9		 )2}{fFa%  
LCC6.1f		 TX]4Y953D  
Ø0.23		 ZLdvzH@'  
0.04		 :g3n [7wR  
0.5		 ;C%40;Q  
0.5
SMaC{RPQ  
500020		 \)VV6'zih  
AD230-9		 Qi|jL*mj&  
TO52S1		 Cz x U @  
Ø0.23		 w[z^B&  
0.04		 bD<[OerG  
0.5		 fGJPZe  
0.5
nBL7LocvR  
501265		 |")}p=   
AD230-9		 i8I%}8  
TO52S1F2		 ^~0Mw;n&  
Ø0.23		 4EzmH)4G  
0.04		 D;)Tm|XizW  
0.5		 JwbC3 t):@  
0.5
s bd;Kn  
500023		 /hf}f=7kH  
AD230-9		 AwB ]0H  
TO52S3		 $b\`N2J-_  
Ø0.23		 Ev IL[\Dy  
0.04		 .ps'{rl8  
0.5		 !!_K|}QOE  
0.5
tfj6#{M5  
501122		 UiA\J  
AD500-9		 8Cz_LyL  
LCC6.1		 HDYr?t~V  
Ø0.5		 *. l,_68  
0.2		 4H8vB^  
0.8		 /j./  
0.55
=:[Jz1M5  
501818		 y5iLFR3z  
AD500-9		 $6h:j#{JE  
LCC6.1f		 4x.'H18  
Ø0.5		 /ZZo`   
0.2		 4&)*PKq  
0.8		 !>-cMI6E  
0.55
MVz=:2)J2  
500031		 ),0_ C\  
AD500-9		 ~YOwg\w^  
TO52S1		 NY\q  
Ø0.5		 UA/Q3)  
0.2		  db^S@}  
0.8		 vb)Z&V6(  
0.55
zx'G0Z9]  
500590		 ?1i>b->  
AD500-9		 v9INZ1# v  
TO52S1F2		 |Y"q. n77  
Ø0.5		 {&8-OoH ~  
0.2		 _ 0%sYkUc  
0.8		 z$oA6qB)  
0.55
IBb3A  
500306		 EcrM`E#kaZ  
AD500-9		 ,x!P|\w.G{  
TO52S2		 (Mhj-0xf$  
Ø0.5		 Ra<mdteZT  
0.2		 z+FhWze  
0.8		 S*Scf~Qp  
0.55
jFpXTy[>  
500156		 T j9;".  
AD500-9		 m `~/]QQ  
TO52S3		 +[8s9{1{C  
Ø0.5		 g<{/mxv/  
0.2		 U|6ME%xm  
0.8		 !OekN,6  
0.55
buX$O{43I  
501196		 ^;n,C+  
AD800-9		 5WgdgDb@L  
TO52S1		 ug0[*#|Y  
Ø0.8		 LF* 7;a  
0.5		 Um]>B`."wK  
2		 &e@2zfl7  
0.9
bVSa}&*kM  
501197		 /=>z|?z3  
AD1100-9		 J/8aDr (+  
TO52S1		 S*Un$ngAh  
Ø1.13		 t Krr5SRb  
1		 ,,S5 8\x  
4		 K2>(C$Z  
1.3
sguE{!BO  
501208		 FYR%>Em  
AD1500-9		 EMzJJe{Cv  
TO5i		 55MsF}p  
Ø1.5		 %@3AA<  
1.77		 ~?m';  
2		 k-xh-&  
2
o1YX^-<[F  
501198		 DhV($&*M  
AD3000-9		 CdlE"Ye  
TO5i		 YlwCl4hq  
Ø3		 Enm#\(j  
7.07		 {ER! 0w/  
30		 db$Th=s[  
2
!}|n3wQ  
500161		 uS<7X7|!0  
AD5000-9		 %&5 !vK  
TO8i		 F7gipCc1We  
Ø5		 =i  }  
19.63		 \~d|MP}"F:  
60		 {[hH: \  
3
)n}Wb+2I  
500756		 f@l$52f3D  
AD230-9-400M		 a'U7 t  
TO5		 j9u/R01d  
AD230-9-400M-TO5 is a high frequency optical data receivercomprising an Avalanche Silicon Photodiode and a transimpedance amplifier ina hermetically sealed TO-5 package.
wx n D3  
500490		 Iq0_X7:{QI  
AD500-9-400M		 vBx*bZ  
TO5		 /:d03N\9k  
AD500-9-400M-TO5 is a high frequency optical data receivercomprising an Avalanche Silicon Photodiode and a transimpedance amplifier ina hermetically sealed TO-5 package.
34k<7X`I  
Multi-Element Array
ewg&DBbN"  
501099		 ~[d U%I>L^  
8AA0.4-9		 >Lp^QP1gU  
SOJ22GL		 zQM3n =y  
APD Array 8 Elements, QE>80% at760-910nm with NTC
,S E5W2a]  
501098		 =fG c?PQ  
16AA0.13-9		 E</Um M+ R  
SOJ22GL		 } NW^?37  
APD Array 16 Elements, QE>80% at760-910nm with NTC
\.y|=Ql_u  
500038		 T#xCu|5  
16AA0.13-9		 0gO<]]M?  
DIL18		 xZW6Hk _  
APD Array 16 Elements, QE>80% at760-910nm
P1)f-:;  
501097		 l_GvdD  
16AA0.4-9		 RB.&,1  
SOJ22GL		 2.CjjI  
APD Array 16 Elements, QE>80% at760-910nm
S453oG"  
50130802		 Wm$( b2t  
25AA0.04-9		 90L,.  
BGA		 H$TYp  
APD Array 25 (5×5) elements, QE>80% at760-910nm with PTC
6*cG>I.Z  
50130802		 opxVxjTT#  
25AA0.16-9		 8aZuI|z  
BGA		 __r]@hY   
APD Array 25 (5×5) elements, QE>80% at760-910nm with PTC
_Qg^>}]A1  
50130702		 c;c'E&9P]  
64AA0.04-9		 ~L(=-B`Ow  
BGA		 nlJ~Q_E(  
APD Array 64 (8×8) elements, QE>80% at760-910nm with PTC
O9*cV3}H  
501207		 +6 t<FH  
QA4000-9		 qa wb9Iud0  
TO8Si		 D,%R[F? 5O  
Quadrant Avalanche Photodiode, QE>80%at 760-910nm
3kFSu  
Series 10: NIR sensitivity enhanced -1064nm (specifically for laser rangefinders, targeting systems or anyapplications using YAG lasers or similar NIR radiation sources)
zJJ KLr;  
Order #		 =<w6yeko  
Type		 Fq/?0B8  
Active Area		 834(kw+#9  
Dark Current		 Jv1igA21_h  
Rise Time
g.OBh_j-v  
Chip		 WF\ hXO  
Package		 ;@p2s'(  
Size		 dd1m~Gm  
Area		 ~ l"70\&  
M=100		 6Ug( J$Ouh  
M=100 1064nm
{o"X8  
mm		 ` W$  
mm2		 2`>/y  
nA		 #~?Q?"  
ns
}@MOkj  
500953		 9 2_F8y*D  
AD500-10		 amq]&.M  
TO5i		 @w&VI6  
Ø0.5		 hZ2!UW4'  
0.2		 YBn"9w\#  
1.5		 PmOm>  
4
' 7G'R  
501233		 d%_v eVIe  
AD800-10		 2|]$hjs  
TO5i		 Poy ]5:.  
Ø0.8		 a@`15O:  
0.5		 L6`(YX.:  
3		 ry9%Y3  
5
^$qr6+  
500883		 :e>y= s>  
AD1500-10		 lJ.:5$2H  
TO5i		 s\ft:a@  
Ø1.5		 -=BQVJ_dK{  
1.77		 z =1 J{]  
7		 %T@3-V_  
5
ixF '-  
50123401		 *0zdI<Oe  
AD4000-10		 pQ%~u3  
TO8Si		 ?"f\"N  
Ø4		 ;okFm  
12.56		 K6<@DP+/  
50		 i5wXT  
6
,l`4)@{G  
501387		 1A\Jh3;Q  
AD800-10		 T0BFit6  
TO8S		 am,UUJ+h>  
High speed, high gain, low noise, lowpower consumption hybrid (AD800-10+TIA)
=au7'i|6  
Multi-Element Array
rT$J0"*=  
501174		 ; (I(TG  
QA4000-10		 S <~"\<ED  
TO8Si		 ut z.  
Quadrant Avalanche Photodiode, High QE at850-1070nm
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