新势力光电供应雪崩二极管

新势力光电供应雪崩二极管（APD，Avalanchephotodiodes），是一种内部增益机制的光电二极管：蓝光增强型、红光增强型、红外增强型（900nm、1064nm）。该系列雪崩二极管应用广泛，包括：安检设备、激光测距、运动控制、分析仪器、生物医疗、光通信、军事、航空航天、光通讯。备注：如果采购数量10片以上，新势力光电提供配套的驱动电路模块。

.`mtA`N Series 11: Blue sensitivity enhanced (forbiomedical applications)
1N>6rN Order #	>j) w\i Type		w'\|&5cS Active Area		srsK:%` Dark Current	^~, ndH{ Rise Time
	q`cEA<~S Chip	}U(\~ =D Package	C#ZhsWS!b Size	N:OD0m%`) Area	Et)920 M=100	'xsbm^n6a& 410nm 50Ω
	q`cEA<~S Chip	}U(\~ =D Package	@c0n2 Xcr mm	a6k(9ZF mm2	6GY32\Ac nA	,zG<7~m ns
Z6NJ)XQy6F 500970	aN:HG)$@ AD800-11	([[)Ub$U TO52S1	!8we8)7 Ø0.8	xcw%RUC- 0.5	ZU)BJ!L,s 1	#>@<n3rq 1
I Jqv w 500967	-J{Dxz AD1900-11	pn\|p(6 TO5i	-g9^0V`G Ø1.95	v'h3CaA9j 3	l_bL,-\|E8 5	Go-wAJ> 2
vlAO z Series 12: Red sensitivity enhanced(cut-off frequency up to 3 GHz)
lt{lHat1 Order #	W)\|c[Q\ Type		/SbSID_a Active Area		]bs+: Dark Current	1V-=$Q3 V7 Rise Time
	7t ZW^dF Chip	4[2=L9MIo~ Package	Tt{U"EFO Size	&fCP2]hj' Area	*Kp}B}}J 660nm M=100	~g*Y, Y 660nm 50Ω
	7t ZW^dF Chip	4[2=L9MIo~ Package	$K+4C0wX` mm	oSN8Xn*qr mm2	P/C&R-{') A/W	N$C{f;xV GHz
f#'8"ff*1 501828	gTqeJWX9wP AD100-12	oK#\HD4U LCC6.1	zv$Gma_ Ø0.1	&7$,<9. 0.008	;RNM 50	m5X3{[a: typ.3, min.2
NQDLI 1o 501829	$7msL#E7 AD100-12	9BqQ^`bu LCC6.1f	"}0)YRz% Ø0.1	,DexJ1 0.008	A Z4\|&iT 44	u(8_[/_B typ.3, min.2
Oyi;bb<# 501831	nw~/~eM5= AD100-12	)`B -O:: TO52S1	t)\D Ø0.1	@*CAn(@#N 0.008	=@Q#dDnFu% 50	4}.WhE\|h typ.3, min.2
q:TZ=bs^ 501157	&?KPu?9 AD230-12	8W19#?7>B LCC6.1	\Ku9"x Ø0.23	A Oby*c 0.042	ybD{4&ZE 50	IW5*9)N? typ.3, min.2
-s9Y(> 501156	@/CRIei AD230-12	fQ=&@ >e LCC6.1f	*Gg1h@& Ø0.23	KU1+<OCh 0.042	&eThH,w$2 44	BengRG[ typ.3, min.2
?R\|fS*e2EB 501820	X)`(nj AD230-12	&/B2)l6a LCC6.1f	s5c! ^,L8 Ø0.23	1$:{{% 0.042	T^/Gj\|N* 44	t` }20=I+ typ.3, min.2
}u(d'9u 501162	qWRNHUd AD230-12	K!IF?iell TO52S1	PY^^^01P Ø0.23	844tXMtPB\ 0.042	7sQ]w 50	t] n(5!L( typ.3, min.2
p{mxk)A 501155	^4u3Q AD500-12	@D.R0uM LCC6.1	v YRt2({}Z Ø0.5	Rz<d%C;R 0.196	N&0uXrw 50	,^MW)Gf< typ.3, min.2
8\qCj.>S 501154	OYqYI!N/ AD500-12	<Dt/Rad LCC6.1f	c8k6(#\ Ø0.5	jjS{q,bo 0.196	m[g< K 44	Hj5WJ{p. typ.3, min.2
]wkSAi5z* 501819	9B!im\]O AD500-12	)8 "EI-/. LCC6.1f	Sb:zN'U Ø0.5	.LXh]I* 0.196	b'Fx), 44	7]M,yIwc typ.3, min.2
<F#*:Re_y 501163	<FUqD0sQ AD500-12	egxJ3. TO52S1	M`9orq< Ø0.5	Z]7;u>2 0.196	0j a 50	-!C Y,'3 typ.3, min.2
GvZac Series 8: Optimized for high cut-offfrequencies-850 nm (optimized for high speeds)
#lBpln9 Order #	:f?,]\|]+- Type		W%cj39$ Active Area		5CY@R Dark Current	X%4uShM Rise Time
	]v^`+s}3 Chip	IS0HV$OI Package	Ac5o K Size	wZ]BY; Area	RB lOTQjv M=100	!OuTXa,IH M=100 20V 50Ω
	]v^`+s}3 Chip	IS0HV$OI Package	dPH! V6r mm	)5GdvqA mm2	I \|<+'G nA	7U{b+=,wK ns
)F%wwc^r 501810	DK@w^ZW6JA AD100-8	m]-v IUpb LCC6.1	X5L(_0?F1 Ø0.1	d}wa[WRv 0.008	[/+dHW\| 0.05	9?g]qy,1) <0.18
Y6;0khp 501811	A<YZBR_ AD100-8	h87L8qh9 LCC6.1f	."!8B9s Ø0.1	skR,M=F~ 0.008	G>q{~HE1 0.05	oxCs* <0.18
RXx?/\~yd; 501812	B(en5\| AD100-8	I7G\X#,iz LCC6.1f	6wpND\|cT Ø0.1	wCq)w=, 0.008	TN \|{P 0.05	!0. 5 <0.18
?(,5eg 500011	_V7^sk! AD100-8	-aH?7HV} TO52S1	i"sYf9, Ø0.1	3'sWlhf; 0.008	QN}3S0 0.05	SRG!G]?- <0.18
?2<6#>(7a 501171	$Va]vC8? AD100-8	:i,c<k TO52S3	2LxVt@_R!% Ø0.1	ek{PA!9Sk 0.008	>Rki[SNb-b 0.05	j3rv2W\ <0.18
)Py+jc. 501078	V&,<,iNN AD230-8	r;%zGFp LCC6.1	B1d%# Ø0.23	jzJ1+/9 0.04	J%Z)# 0.3	SbPjU50 0.18
O 44IH`SI 501079	2p3u6\y AD230-8	sen{f^U LCC6.1f	<E}]t,'3 Ø0.23	Y^jnlS)h 0.04	DO-K 0.3	!iitx U 0.18
R 6yvpH 501805	eZ.0,A*1B1 AD230-8	2`FsG/o\T~ LCC6.1f	VU+s7L0 Ø0.23	\|L_g/e1A3 0.04	X_sG6Q@ 0.3	{u_k\m[Y 0.18
#`#aSqGmc 500019	kG;\i AD230-8	J\|2Hqd TO52S1	5.K$ X$+7} Ø0.23	ux79"5qb 0.04	&v9PT!R~ 0.3	m/F(h-? 0.18
f/[?5M[ 500022	\|b'<XQ&l5 AD230-8	ZhbY,wJ, TO52S3	agxSb^ 8tF Ø0.23	= a.n`3`Q 0.04	7E75s)KH 0.3	UVBw;V 0.18
l6DIsR 501496	*6x^w%=A AD230-8	~ %YTJS ODFN2x2	d>"$^${ Ø0.23	s8_NN 0.04	l[\,*C 0.3	> %cWTC 0.18
]S2[eS 501077	h,6S$,UI AD500-8	}Ka.bZS LCC6.1	x<y[na Ø0.5	/2\=sTd 0.2	KjfKo;T 0.5	w4MMo 0.35
0)Xue9AS 501076	; 7v7V AD500-8	rIWN!@.J LCC6.1f	-MW(={# Ø0.5	p$o&dQ=n[ 0.2	=\|V]8 tN 0.5	4C9"Q,o%& 0.35
t?H;iBrpxd 501809	bvu<IXX=2 AD500-8	<<zz*;RJJ LCC6.1f	rKs WS~U Ø0.5	L\?g/l+k 0.2	mhkAI@)> 0.5	=qR7-Q8B 0.35
'W2$wN+P 500030	YM.IRj2/1 AD500-8	*9{Wn7pck/ TO52S1	VJtTbt;> Ø0.5	TN@JPoH 0.2	oS\|~\,p" 0.5	M j%\|'dZz 0.35
QDT{Xg*I 500305	n6UU6t{ AD500-8	eh7r'DmAR TO52S2	V?z{UZkR Ø0.5	!#gE'(J;c 0.2	kt0{-\ p 0.5	o-<_X&"a\|5 0.35
M"l rwun^ 500155	;Owu:} AD500-8	ggsi`Z{j? TO52S3	xI\s9_"Qy Ø0.5	TvG:T{jwy 0.2	!E#.WX 0.5	4bi\$ 0.35
(tLQX~Ur 500947	i\4"FO?v AD800-8	XaS_3d TO52S1	8*~:gZ7: Ø0.8	3[i!2iL. 0.5	$M<4Bqr 2	\HEo8~TY 0.7
e^_@^(\|\|!6 501117	$D\l%y/C AD1100-8	zjh9ZLu[ TO52S1	w:xKgng=L Ø1.13	0HuRFl 1	r<N*N,~ 4-6	Zt0%E<C{ 1
!;!~5"0~" 500015	J9c3d~YW AD1900-8	q>4i0p8^ TO5i	LP6FSo~K Ø1.95	m`q>_* 3	LA%al @ 15	CuO*>g^K[ 1.4
.eXA.9\|jm 501194	v4~Xv5\|w^F AD3000-8	n(xlad TO5i	rAw1g,& Ø3	lBZ*G 7.07	w}q@VVB% 30	U`_vF~el~ 2
fqsp1m$ 500160	Wc>)/y5$ AD5000-8	G-?9;w'@ TO8i	Y8{1?LO Ø5	VCRv(Ek 19.63	?s} E<Kr 60	\|aJ6363f. 3
@W- f{V 500002	(jFE{M$- AD230-8-2.3G	o"M^sKz47 TO5	CHP6H}#\|g AD230-8-2.3GTO5 is a high frequency optical data receiver comprising an Avalanche SiliconPhotodiode and a transimpedance amplifier in a hermetically sealed TO5package.
cNc_ n<M 500003	ts!aKx AD500-8-1.3G	U)]natB TO5	A"VXs1>_^ AD500-8-1.3GTO5 is a high frequency optical data receiver comprising an Avalanche SiliconPhotodiode and a transimpedance amplifier in a hermetically sealed TO5package.
Fe< t@W Series 9: NIR sensitivity enhanced-900nm(specifically for LIDAR and laser rangefinders)
Qs X59d Order #	0-f- Type		!sQ8,l0h Active Area		ua-\|4@YO Dark Current	1)Bi>X Rise Time
	NX_S Chip	+%9Y7qol Package	<r3n?w8 Size	m48Y1'4 Area	<yO9j M=100	:E`l(sI7J} M=100
	NX_S Chip	+%9Y7qol Package	M=_CqK* mm	f(o`=% k8 mm2	K):sq{ nA	=JH,RQ * ns
^:ngHue8~ 501815	`.WKU"To AD100-9	1*b%C"C LCC6.1	j=>Gfo Ø0.1	Bd[Gsns 0.008	{_}"USS 0.1	PQ]N>'v- <0.5
4FdH:os 501816	/2cOZ1G; AD100-9	FuBRb(I LCC6.1f	muY^Fx Ø0.1	.6#2i <oPW 0.008	H/{3 i 0.1	?=rh=# <0.5
+t{FF!mL 501123	L-dKZ8Q AD230-9	2Jv4l$$;* LCC6.1	n(VMGCZPV Ø0.23	$dw;Kj'\ 0.04	-v@^6bQVp 0.5	j,jUg}b 0.5
n//a;m 501817	C( ;7*] AD230-9	<:-&yDh u LCC6.1f	{qyo# Ø0.23	N6'Y N10 0.04	m#'9)%t!J 0.5	&pl;U\dc*a 0.5
c[q3O** 500020	wE2?/wb AD230-9	6j#5Ag: TO52S1	0g4cyK~n] Ø0.23	Mla,"~4D5 0.04	%SXqJW^: 0.5	:+$_(*Z 0.5
v)EJ\|2` 501265	YN[D^;} AD230-9	9,+LNZ'k TO52S1F2	#*@Yil=1 Ø0.23	`0N/ /Q 0.04	(fS4qz:&l 0.5	0nAS4Az 0.5
m`aUz}Y>c 500023	UqbE AD230-9	uc8>B&B% TO52S3	d[de5Xra Ø0.23	>EjBknl 0.04	up6LO7drW/ 0.5	s!Vtwp9 0.5
\|kD?^Nx 501122	5/<Y,eZ/ AD500-9	UPsh Y LCC6.1	?##GY;# Ø0.5	[gDvAtTZ5 0.2	O^GTPYW 0.8	EBm\rM8 0.55
xi0&"?7la 501818	+dRTHz AD500-9	fpUX @b LCC6.1f	~mU#u\r(* Ø0.5	#'T@mA 0.2	APya&TG 0.8	HU'}c*d] 0.55
;2^=#7I? 500031	;\|c, AD500-9	-.y3:^){^ TO52S1	4*]`s\|fbu Ø0.5	@<+(40`* 0.2	va)\uXW.N 0.8	&o(? }W 0.55
~ lS3+H 500590	4Y'qoM; AD500-9	x<].mx TO52S1F2	4YJs4CB Ø0.5	@eul~%B{X 0.2	e_e\|t>nQ 0.8	' x\|B' 0.55
VrDvd 500306	XyhdsH5%3! AD500-9	J_tJj8 TO52S2	[69aTl>/ Ø0.5	Y,9("'bo 0.2	7@ZL(G 0.8	&p*N8S8 0.55
,PnEDQ\|l 500156	Q8O38uZ AD500-9	?tBEB5 TO52S3	.w`8_v&Y Ø0.5	b`IC)xN$ 0.2	@\|M10r9E 0.8	uE>}>6)b 0.55
{3?g8e]zr 501196	h0!j;fn AD800-9	OLv( TO52S1	tNtP+v-{ Ø0.8	joa$Y6 0.5	?x:\RNB/ 2	UJQ!~g.y] 0.9
,30&VW## 501197	\K?3LtJ AD1100-9	w>#~_x,` TO52S1	\|_-FQ~Hf F Ø1.13	yjr!8L:m 1	>_R5Li 4	^LZU><{'; 1.3
<yeG0`}t 501208	{8E hC/= AD1500-9	Ly3^zFW TO5i	B}:[~R' Ø1.5	K,J:i^2 1.77	rZ^DiFR 2	yfq"atj 2
S\Q/ "Y 501198	@o8\`G AD3000-9	idV4hMF9 TO5i	#T+%$q [: Ø3	.@R{T3=Q 7.07	"8s0~[6S 30	Rj-<tR{ 2
#[2]B8NZ 500161	o-R;EbL AD5000-9	zK33.HY TO8i	,!c. Ø5	2 3 P7~S 19.63	/mvuSNk 60	bA1uh]oB 3
poeKY[]. 500756	55fV\3F\|R AD230-9-400M	Riw#+#r]/ TO5	>Efv?8$E\ AD230-9-400M-TO5 is a high frequency optical data receivercomprising an Avalanche Silicon Photodiode and a transimpedance amplifier ina hermetically sealed TO-5 package.
Cdc6<8 500490	0F)Y[{h< AD500-9-400M	nx=Zl:Q} TO5	'a*tee ^RS AD500-9-400M-TO5 is a high frequency optical data receivercomprising an Avalanche Silicon Photodiode and a transimpedance amplifier ina hermetically sealed TO-5 package.
nKch_Jb Multi-Element Array
~c+0SuJ 501099	lQldW\|S> 8AA0.4-9	x# 0(CcKK SOJ22GL	^b'\|`R+~} APD Array 8 Elements, QE>80% at760-910nm with NTC
CpO!xj+ 501098	nxCwg> 16AA0.13-9	8 yQjB-,# SOJ22GL	Td}#o!4! APD Array 16 Elements, QE>80% at760-910nm with NTC
)9,9yd~SI 500038	GRS[r@W[1 16AA0.13-9	?$v#;n?@I DIL18	[P407Sa" APD Array 16 Elements, QE>80% at760-910nm
7$k[cL1 501097	_da>=^hFJ 16AA0.4-9	Xh;Pbm\|K SOJ22GL	\5cAOBja APD Array 16 Elements, QE>80% at760-910nm
Pqi>,c<&mL 50130802	L@XhgQ 25AA0.04-9	_m#M^<0n BGA	$xJVUV APD Array 25 (5×5) elements, QE>80% at760-910nm with PTC
~Qeyh^wo 50130802	5k{a(I 25AA0.16-9	w-pdpbHV BGA	}hv>LL APD Array 25 (5×5) elements, QE>80% at760-910nm with PTC
x/ lW=EQ 50130702	]z;%%'gW6 64AA0.04-9	I#tn/\n BGA	#/\5a;Elc APD Array 64 (8×8) elements, QE>80% at760-910nm with PTC
5v<BB`XWp 501207	^ 1}_VB)^ QA4000-9	{=VauF TO8Si	!inonR Quadrant Avalanche Photodiode, QE>80%at 760-910nm
:D`ghXj Series 10: NIR sensitivity enhanced -1064nm (specifically for laser rangefinders, targeting systems or anyapplications using YAG lasers or similar NIR radiation sources)
17 Hdj Order #	a`\|&rggN Type		bzz=8n Active Area		=Wn11JGh Dark Current	-Xb]=Yf- Rise Time
	hlWTsi4N Chip	u\|z B\zd Package	>r6`bh [4 Size	E`}KVi57 Area	CXwDG_e M=100	iqW T<WY M=100 1064nm
	hlWTsi4N Chip	u\|z B\zd Package	Ew~piuj mm	CA, &R<] mm2	yS%IE>? nA	Wt*&_+ae ns
o\|FRG{TJ 500953	^NKB AD500-10	: z*OAl" TO5i	4IuQQ Ø0.5	}D-h=,]; 0.2	Y5M>&}N 1.5	f^z/s6I0 4
t&MJSFkiA 501233	~ x- R78' AD800-10	dt%waM! TO5i	L?T%;VdG'> Ø0.8	xj~5/)XX\|X 0.5	:yO.Te F 3	Uax[Zh[Cg 5
ppH5>Y 6c 500883	Q{F*%X AD1500-10	>jMq-#*4 TO5i	D^V0kC p!F Ø1.5	PZmg7N 1.77	`&xo;Vnc 7	]"Z*Hq z 5
xO"fg9a 50123401	5RD\XgyN] AD4000-10	# Un>g4>Rh TO8Si	-F\xZ Ø4	T5(]/v,UT 12.56	4 qMO@E_ 50	,*ZdMw! 6
JsAl;w 501387	QwPLy O AD800-10	y8=p;7DY TO8S	r6k0=6i High speed, high gain, low noise, lowpower consumption hybrid (AD800-10+TIA)
,w&8 &wj Multi-Element Array
Ln-/ 9'^ 501174	m!{Xuy QA4000-10	) inhPd TO8Si	[gI;;GW Quadrant Avalanche Photodiode, High QE at850-1070nm

如有需要，可直接联系我们，也可以登录官网查找所需要的产品：
网址：http://www.newopto.com
邮箱：Sales@NewOpto.com
手机：188-5711-5252
电话：0571-85152711

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