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2010-05-09 10:08 |
高功率LED製程技術
高功率LED製程技術 J7m`]!*t
ifHU |0_=
目录 J% AG`
f?5A"-NS
LED 發展 m0C{SBn-M
GaN發光效率 %-r?= L
Conventional versus Power LED + Y;8~+
TYNTEK 40 mil Power chip Pl?}>G
Snellius Law 全反射臨界角損失 Z:c*!`F
Light Extraction dm 2EH
Lumileds AlGaInP LED `x*/UCy\
Improved design of LEDs to increase efficiency Qp w@MF2P
Lumileds AlGaInP LED `~h0?g
Truncated-inverted-pyramid LED 2_.CX(kI
Cree Standard and TIP LED的出光表現 h[, XemwX
Osram’s InGaN Chip `/c@nxh
........... F~'sT}A*
........... AbG &9 =Ks
.......... FSe5k5
鑽石切割與雷射切割 ( mt*y]p?
共晶接合 UI_v3 c3b
Au-Sn phase diagram u`+ 'lBE,
超音波接合 kAt
RY4p
專利 Lumileds-3 aC}p^Nkr"k
覆晶元件的可靠度 `xGT_0&ck
.................... UtPwWB_YV
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