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2010-05-09 10:08 |
高功率LED製程技術
高功率LED製程技術 n *~
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目录 Ra5'x)m36)
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LED 發展 uR@`T18
GaN發光效率 i[{]
LiP
Conventional versus Power LED n-3j$x1Ne
TYNTEK 40 mil Power chip `uVW<z{ l
Snellius Law 全反射臨界角損失 i@5%d!J
Light Extraction %uVJL z
Lumileds AlGaInP LED r)( BT:2m
Improved design of LEDs to increase efficiency *t{c}Y&@
Lumileds AlGaInP LED MuV0;K \
Truncated-inverted-pyramid LED q_y,j &
Cree Standard and TIP LED的出光表現 ^YJA\ d@
Osram’s InGaN Chip \t# 9zn>
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........... F.pHL)37
.......... no NF;zT
鑽石切割與雷射切割 t!~YO'<dS
共晶接合 &17 ,]# 3
Au-Sn phase diagram Xm:= jQn
超音波接合 c4> s E[]
專利 Lumileds-3 #r.` V!=
覆晶元件的可靠度 y F5
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