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2010-05-09 10:08 |
高功率LED製程技術
高功率LED製程技術 OPBnU@=R
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目录 8WZM}3x$f{
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LED 發展 ~e ]83?
GaN發光效率 y!mjZR,&
Conventional versus Power LED PRWS[2[yk
TYNTEK 40 mil Power chip vDv:3qN7(
Snellius Law 全反射臨界角損失 4[Hf[ .
Light Extraction hqD]^P>l1
Lumileds AlGaInP LED FuLP{]Y+AM
Improved design of LEDs to increase efficiency &JtK<g
Lumileds AlGaInP LED =d .Z:L9d
Truncated-inverted-pyramid LED -fT]}T6=
Cree Standard and TIP LED的出光表現 DE^{8YX,
Osram’s InGaN Chip 3iR;(l}
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鑽石切割與雷射切割 yFH)PQ_
共晶接合 u!
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Au-Sn phase diagram vtv|H
超音波接合 a~9U{)@F
專利 Lumileds-3 3!,XR\`[
覆晶元件的可靠度 AWi~qzTZ
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