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2010-05-09 10:08 |
高功率LED製程技術
高功率LED製程技術 gL}x| Q2`
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目录 rugR>&mea
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LED 發展 pCt0[R;?
GaN發光效率 "Iwd-#;$;
Conventional versus Power LED wC~LZSTt
TYNTEK 40 mil Power chip m(eR Wx&pZ
Snellius Law 全反射臨界角損失 D|R aj\R
Light Extraction 4NxI:d$&*
Lumileds AlGaInP LED XVWVY}
Improved design of LEDs to increase efficiency bo04y)Iz
Lumileds AlGaInP LED AxZaV;%*
Truncated-inverted-pyramid LED *>8Y/3Y\B
Cree Standard and TIP LED的出光表現 *Ph@XkhU
Osram’s InGaN Chip YqNI:znm-
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鑽石切割與雷射切割 :1,xs e
共晶接合 1y}tPkOe7O
Au-Sn phase diagram 7zEpuw
超音波接合 w6FV SU]sY
專利 Lumileds-3 nMU[S +
覆晶元件的可靠度 h(MS>=
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