| cyqdesign |
2010-01-31 21:48 |
半导体器件导论,影印版,作者:(美)尼曼
《半导体器件导论》(影印版)还尽量保持了原书的主要优点:(1)注重基本概念和方法。《半导体器件导论》(影印版)从内容的整体编排到具体章节的叙述,都体现了突出物理概念、强调基本分析方法的指导思想。书中的数学推导和物理分析融为一体,得出的结论不仅对理解物理概念十分重要,而且经得起反复推敲。书中还采用了大量非常清晰的插图,帮助读者更好地理解基本概念。(2)可读性强,便于自学。全书脉络清楚,说理透彻,易于读者理解和掌握。每一章的开头都有引言,告诉读者可以从本章学到什么,应该掌握什么;每一章中都有例题和读者自测题;每一章的最后还有总结、复习提纲和大量习题(其中包含一些采用计算机进行模拟计算的练习题)。通过举例和练习加深读者对基本概念的理解是《半导体器件导论》(影印版)突出的特点。 hYS}PE 《半导体器件导论》(影印版)是美国新墨西哥大学电机与计算机工程系Neamen教授所著的“SereicorlductorPhysics and Devices,3rd edition”一书的改进版本。 !m<v@SmL\ 与原书相比,《半导体器件导论》(影印版)更好地将固体晶格结构、量子力学入门知识、固体的量子理论以及半导体物理和半导体器件有机地结合在一起。利用《半导体器件导论》(影印版),学生只需要具有高等数学和大学普通物理的基础,用一个学期就可以系统地学习到半导体器件的基本理论,从而为进入微电子学研究领域打下一个良好的基础。这一特点也是目前国内出版的同类教材很难达到的。 6_wj,7 [attachment=24330] p,K]`pt= :@8N${7`$A 市场价:¥69.00 [Y_CRxa\u 优惠价:¥55.20 为您节省:13.80元 (80折) T@)|0M
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`RF Preface xvii e;G}T%W CHAPTER 1 qRnD{g|{1 The Crystal Structure of Solids -L&%,% 1.0 Preview 1 A4>j4\A[M 1.1 Semiconductor Materials 2 82*nC!P3E 1.2 Types of Solids 3 cA8A^Iv:0 1.3 Space Lattices 4 6(0ME$ 1.3.1 Primitive and Unit Cell 4 JRYCM}C] 1.3.2 Basic Crystal Structures 6 9H#;i]t & 1.3.3 Crystal Planes and Miller Indices }@H(z 1.3.4 The Diamond Structure 13 3JJEj1O 1.4 Atomic Bonding 15 _(%;O:i 1.5 Imperfections and Impurities in Solids 17 yJn<S@)VT: 1.5.1 Imperfections in Solids 17 ^ 9`O
^ 1.5.2 Impurities in Solids 18 VY|'7in"M 1.6 Growth of Semiconductor Materials 19 `+0K~k|DC 1.6.1 Growth from a Melt 20 )j/b`V6 1.6.2 Epitaxial Growth 22 D(&XmC[\Y 1.7 Device Fabrication Techniques: NA;OT7X[ Oxidation 23 aF]cEe 1.8 Summary 25 F9PXQD( Problems 27 xjK@Q1MJ CHAPTER 2 gHmy?+) Theory of Solids 31 KqhE=2, 2.0 Preview 31 AREpZ2GiU 2.1 Principles of Quantum Mechanics 32 *mtS\J 2.1.1 Energy Quanta 32 IJ E{JH 2.1.2 Wave-Particle Duality Principle 34 fuao*L] 2.2 Energy Quantization and Probability Concepts 36 J-d>#'Wb| 2.2.1 Physical Meaning of the Wave Function 36 5|_El/G 2.2.2 The One-Electron Atom 37 O'[r,|Q{ 2.2.3 Periodic Table 40 :F`-<x/ 2.3 Energy-Band Theory 41 fZka$
4 2.3.1 Formation of Energy Bands 41 M>g%wg7Ah 2.3.2 The Energy Band and the Bond Model 45 bTep TWv 2.3.3 Charge Carriers——Electrons and Holes 47 *pj^d>< 2.3.4 Effective Mass 49 i!u:]14> 2.3.5 Metals, Insulators, and Semiconductors 50 =s/UF _JN 2.3.6 The k-Space Diagram 52 o/4U`U)Q0v 2,4 Density of States Function 55 B6J< 2.5 Statistical Mechanics 57 nv'YtmR 2.5.1 Statistical Laws 57 )y"8Bx=x4 2.5.2 The Fermi-Dirac Distribution Function A(6n- zL and the Fermi Energy 58 y^[?F>wB 2.5.3 Maxwell-Boltzmann Approximation 62 b;jr;I 2.6 Summary 64 y*H rv Problems 65 2`P=ekF] CHAPTER 3 i)=dp!Bx^ The Semiconductor in Equilibrium 70 ,
G9{: 3.0 Preview 70 uRCZGg&V?# 3.1 Charge Carriers in Semiconductors 71 0f9*=c 3.1.1 Equilibrium Distribution of Electrons and Holes 72 5-2#H?:U 3.1.2 The no and Po Equations 74 HIsB)W&%@ 3.1.3 The Intrinsic Carrier Concentration 79 7&w$@zs87 3.1.4 The Intrinsic Fermi-Level Position 82 kG>m(n 3.2 Dopant Atoms and Energy Levels 83 _>RTefL5 3.2.1 Qualitative Description 83 \#7@"~< 3.2.2 Ionization Energy 86 \$W\[s4I 3.2.3 Group III-V Semiconductors 88 05s{Z.aK 3.3 Carrier Distributions in the Extrinsic Semiconductor 89 2}0S%R( 3.3.1 Equilibrium Distribution of Electrons and Holes 89 $iMbtA5aQ …… Bv{DZ?{s 市场价:¥69.00 ;Q\MH t* 优惠价:¥55.20 为您节省:13.80元 (80折) =g{Hs1W
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