| cyqdesign |
2010-01-31 21:48 |
半导体器件导论,影印版,作者:(美)尼曼
《半导体器件导论》(影印版)还尽量保持了原书的主要优点:(1)注重基本概念和方法。《半导体器件导论》(影印版)从内容的整体编排到具体章节的叙述,都体现了突出物理概念、强调基本分析方法的指导思想。书中的数学推导和物理分析融为一体,得出的结论不仅对理解物理概念十分重要,而且经得起反复推敲。书中还采用了大量非常清晰的插图,帮助读者更好地理解基本概念。(2)可读性强,便于自学。全书脉络清楚,说理透彻,易于读者理解和掌握。每一章的开头都有引言,告诉读者可以从本章学到什么,应该掌握什么;每一章中都有例题和读者自测题;每一章的最后还有总结、复习提纲和大量习题(其中包含一些采用计算机进行模拟计算的练习题)。通过举例和练习加深读者对基本概念的理解是《半导体器件导论》(影印版)突出的特点。 pP JhF8Dt 《半导体器件导论》(影印版)是美国新墨西哥大学电机与计算机工程系Neamen教授所著的“SereicorlductorPhysics and Devices,3rd edition”一书的改进版本。 *^|.bBG 与原书相比,《半导体器件导论》(影印版)更好地将固体晶格结构、量子力学入门知识、固体的量子理论以及半导体物理和半导体器件有机地结合在一起。利用《半导体器件导论》(影印版),学生只需要具有高等数学和大学普通物理的基础,用一个学期就可以系统地学习到半导体器件的基本理论,从而为进入微电子学研究领域打下一个良好的基础。这一特点也是目前国内出版的同类教材很难达到的。 rUJIf;Zwo [attachment=24330] Y
6B7qp g9N_s,3jC 市场价:¥69.00 b/>L}/^PM 优惠价:¥55.20 为您节省:13.80元 (80折) ,OGXH2!h
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$c$Xi Preface xvii /)Ga< CHAPTER 1 ",9QqgY+ The Crystal Structure of Solids t|/{oAj 1.0 Preview 1 =a!w)z_rw 1.1 Semiconductor Materials 2 Cp[{|U-?G 1.2 Types of Solids 3 =\[}@Kh 1.3 Space Lattices 4 ExJch\ 1.3.1 Primitive and Unit Cell 4 mpcO-%a 1.3.2 Basic Crystal Structures 6 "9>.,nzt 1.3.3 Crystal Planes and Miller Indices h5+L/8+J^z 1.3.4 The Diamond Structure 13 Wzm!:U2R* 1.4 Atomic Bonding 15 ,\2w+L5TD 1.5 Imperfections and Impurities in Solids 17 (g>8!Gl 1.5.1 Imperfections in Solids 17 {`X O3 1.5.2 Impurities in Solids 18 y5oC|v7 1.6 Growth of Semiconductor Materials 19 PG@Uygahu 1.6.1 Growth from a Melt 20 P LHiQ: 1.6.2 Epitaxial Growth 22 *3A`7usU 1.7 Device Fabrication Techniques: y9/x:n&] Oxidation 23 AEUXdMo 1.8 Summary 25 5!tiu4LU Problems 27 -chk\75 CHAPTER 2 p`oSI}ZwB Theory of Solids 31 A9:dHOmT^U 2.0 Preview 31 f`^\v 2.1 Principles of Quantum Mechanics 32
d q.'[ 2.1.1 Energy Quanta 32 cV|u]ce%1 2.1.2 Wave-Particle Duality Principle 34 T/9`VB%N 2.2 Energy Quantization and Probability Concepts 36 _T8o] 2.2.1 Physical Meaning of the Wave Function 36 ysHmi{V~ 2.2.2 The One-Electron Atom 37 =zetZJg 2.2.3 Periodic Table 40 ke~S[bL%- 2.3 Energy-Band Theory 41 [*{G,=tF`Y 2.3.1 Formation of Energy Bands 41 ggP#2I\ 2.3.2 The Energy Band and the Bond Model 45 E;*JD x 2.3.3 Charge Carriers——Electrons and Holes 47 y,YK Mc 2.3.4 Effective Mass 49 il403Ae0 2.3.5 Metals, Insulators, and Semiconductors 50 2PaRbh{" 2.3.6 The k-Space Diagram 52 #z.QBG@ 2,4 Density of States Function 55 q-k~L\Ys 2.5 Statistical Mechanics 57 K0YUN^St 2.5.1 Statistical Laws 57 _,G^#$pH 2.5.2 The Fermi-Dirac Distribution Function MhaoD5*9 and the Fermi Energy 58 &IZthJqV 2.5.3 Maxwell-Boltzmann Approximation 62 8i?Hh?Mf} 2.6 Summary 64 2A,iY}R Problems 65 +DpiX&^h CHAPTER 3 s\Zp/-Q The Semiconductor in Equilibrium 70 M~o\K' 3.0 Preview 70 +CQ$-3 3.1 Charge Carriers in Semiconductors 71 |o5F%1o 3.1.1 Equilibrium Distribution of Electrons and Holes 72 zA<Hj;9SM 3.1.2 The no and Po Equations 74 ?J1x'/G 3.1.3 The Intrinsic Carrier Concentration 79 `3QAXDWE 3.1.4 The Intrinsic Fermi-Level Position 82 N.l\2S} 3.2 Dopant Atoms and Energy Levels 83 qRX:eo 3.2.1 Qualitative Description 83 <*4'H 3.2.2 Ionization Energy 86
n}f*>Mn 3.2.3 Group III-V Semiconductors 88 q|EE
em 3.3 Carrier Distributions in the Extrinsic Semiconductor 89 Q^Lk^PP7 3.3.1 Equilibrium Distribution of Electrons and Holes 89 ~8htg8CZ` …… sz?/4tY 市场价:¥69.00 E+tV7xa~ 优惠价:¥55.20 为您节省:13.80元 (80折) ~A X@o-WU
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