| cyqdesign |
2010-01-31 21:48 |
半导体器件导论,影印版,作者:(美)尼曼
《半导体器件导论》(影印版)还尽量保持了原书的主要优点:(1)注重基本概念和方法。《半导体器件导论》(影印版)从内容的整体编排到具体章节的叙述,都体现了突出物理概念、强调基本分析方法的指导思想。书中的数学推导和物理分析融为一体,得出的结论不仅对理解物理概念十分重要,而且经得起反复推敲。书中还采用了大量非常清晰的插图,帮助读者更好地理解基本概念。(2)可读性强,便于自学。全书脉络清楚,说理透彻,易于读者理解和掌握。每一章的开头都有引言,告诉读者可以从本章学到什么,应该掌握什么;每一章中都有例题和读者自测题;每一章的最后还有总结、复习提纲和大量习题(其中包含一些采用计算机进行模拟计算的练习题)。通过举例和练习加深读者对基本概念的理解是《半导体器件导论》(影印版)突出的特点。 J<dVTxK12 《半导体器件导论》(影印版)是美国新墨西哥大学电机与计算机工程系Neamen教授所著的“SereicorlductorPhysics and Devices,3rd edition”一书的改进版本。 r;Gi+Ca5 与原书相比,《半导体器件导论》(影印版)更好地将固体晶格结构、量子力学入门知识、固体的量子理论以及半导体物理和半导体器件有机地结合在一起。利用《半导体器件导论》(影印版),学生只需要具有高等数学和大学普通物理的基础,用一个学期就可以系统地学习到半导体器件的基本理论,从而为进入微电子学研究领域打下一个良好的基础。这一特点也是目前国内出版的同类教材很难达到的。 %JHGiCv| [attachment=24330] ?$6Y2 [-;_ZFS{ 市场价:¥69.00 "gne_Ye. 优惠价:¥55.20 为您节省:13.80元 (80折) IS#FiH
k=B]&F t$xY #: Preface xvii jlBanGs? CHAPTER 1 O Vko+X` The Crystal Structure of Solids Mc%Nf$XQ 1.0 Preview 1 1I<rXY(a` 1.1 Semiconductor Materials 2 -sjd&)~S[ 1.2 Types of Solids 3 ;ml)l~~YU 1.3 Space Lattices 4 -xDGH 1.3.1 Primitive and Unit Cell 4 MV\|e1B} 1.3.2 Basic Crystal Structures 6 4)"n
RjGg 1.3.3 Crystal Planes and Miller Indices )6Ny1x+ 1.3.4 The Diamond Structure 13 ?F6pEt4 1.4 Atomic Bonding 15 {
Q`QX`# 1.5 Imperfections and Impurities in Solids 17 =}v}my3y" 1.5.1 Imperfections in Solids 17 lI-L`
x 1.5.2 Impurities in Solids 18 <X7FMNr[ 1.6 Growth of Semiconductor Materials 19 u\LFlX0sO 1.6.1 Growth from a Melt 20 #L{OV)a< 1.6.2 Epitaxial Growth 22 ?I[8' 1.7 Device Fabrication Techniques: 0em#-*|2" Oxidation 23 e=Z,
Jg 1.8 Summary 25 z[cyA. Problems 27 Ircp``g CHAPTER 2 oA =4=` Theory of Solids 31 |iR T!
] 2.0 Preview 31 mN>h5G>a 2.1 Principles of Quantum Mechanics 32 =ZDAeVz3w 2.1.1 Energy Quanta 32 =7C%P%yt 2.1.2 Wave-Particle Duality Principle 34 mXUGe:e8 2.2 Energy Quantization and Probability Concepts 36
Tjl:|F8 2.2.1 Physical Meaning of the Wave Function 36 i2sN3it 2.2.2 The One-Electron Atom 37 AjT%]9
V? 2.2.3 Periodic Table 40 #SX8=f`K5 2.3 Energy-Band Theory 41 ^B@Wp 2.3.1 Formation of Energy Bands 41 *_KFW@bC: 2.3.2 The Energy Band and the Bond Model 45 h-m\% |D 2.3.3 Charge Carriers——Electrons and Holes 47 fuA&7gNC 2.3.4 Effective Mass 49 B"v.*
%"&/ 2.3.5 Metals, Insulators, and Semiconductors 50 _x?uU 2.3.6 The k-Space Diagram 52 V0%V5> 2,4 Density of States Function 55 L
W;heO" 2.5 Statistical Mechanics 57 >9f%@uSM$3 2.5.1 Statistical Laws 57 s7l;\XBy 2.5.2 The Fermi-Dirac Distribution Function sPps q and the Fermi Energy 58 13+<Q \ 2.5.3 Maxwell-Boltzmann Approximation 62 \N4
y< 2.6 Summary 64 v k?skN@ Problems 65 4lM8\Lr CHAPTER 3 >NKe'q<)3 The Semiconductor in Equilibrium 70 PIWux{ 3.0 Preview 70 <TE%Prd}` 3.1 Charge Carriers in Semiconductors 71 wo3wtx 3.1.1 Equilibrium Distribution of Electrons and Holes 72 VB?Ohk]< 3.1.2 The no and Po Equations 74 Y=
]dvc 3.1.3 The Intrinsic Carrier Concentration 79 KMV=%o 3.1.4 The Intrinsic Fermi-Level Position 82 +Ag!?T 3.2 Dopant Atoms and Energy Levels 83 8-lOB 3.2.1 Qualitative Description 83 4<?8M vF 3.2.2 Ionization Energy 86 `KCh*i 3.2.3 Group III-V Semiconductors 88 ~j#]tElb 3.3 Carrier Distributions in the Extrinsic Semiconductor 89 3`#6ACF 3.3.1 Equilibrium Distribution of Electrons and Holes 89 jC3Vbm&ZZ …… ~\cO"(y5:O 市场价:¥69.00 g(Io/hyj 优惠价:¥55.20 为您节省:13.80元 (80折) W0C@9&pn6
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